Transistores - FETs, MOSFETs - Único

Foto: Número da peça do fabricante Disponibilidade Preço Quantidade Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
BUK956R1-100E,127

BUK956R1-100E,127

MOSFET N-CH 100V 120A TO220AB

NXP USA Inc.
747 -

RFQ

BUK956R1-100E,127

Ficha técnica

Tube,Tube TrenchMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 100 V 120A (Tc) 5V, 10V 5.9mOhm @ 25A, 10V 2.1V @ 1mA 133 nC @ 5 V ±10V 17460 pF @ 25 V - 349W (Tc) -55°C ~ 175°C (TJ) Through Hole
BUK958R5-40E,127

BUK958R5-40E,127

MOSFET N-CH 40V 75A TO220AB

NXP USA Inc.
2,253 -

RFQ

Tube,Tube TrenchMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 40 V 75A (Tc) 5V, 10V 6.6mOhm @ 20A, 10V 2.1V @ 1mA 20.9 nC @ 5 V ±10V 2600 pF @ 25 V - 96W (Tc) -55°C ~ 175°C (TJ) Through Hole
BUK9E15-60E,127

BUK9E15-60E,127

MOSFET N-CH 60V 54A I2PAK

NXP USA Inc.
3,729 -

RFQ

Tube,Tube TrenchMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 60 V 54A (Tc) 5V, 10V 13mOhm @ 15A, 10V 2.1V @ 1mA 20.5 nC @ 5 V ±10V 2651 pF @ 25 V - 96W (Tc) -55°C ~ 175°C (TJ) Through Hole
BUK9E1R6-30E,127

BUK9E1R6-30E,127

MOSFET N-CH 30V 120A I2PAK

NXP USA Inc.
3,889 -

RFQ

BUK9E1R6-30E,127

Ficha técnica

Tube,Tube TrenchMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 30 V 120A (Tc) 5V, 10V 1.4mOhm @ 25A, 10V 2.1V @ 1mA 113 nC @ 5 V ±10V 16150 pF @ 25 V - 349W (Tc) -55°C ~ 175°C (TJ) Through Hole
BUK9E1R9-40E,127

BUK9E1R9-40E,127

MOSFET N-CH 40V I2PAK

NXP USA Inc.
5,048 -

RFQ

Tube,Tube - Obsolete N-Channel MOSFET (Metal Oxide) 40 V 120A (Tj) - - - - - - - - -55°C ~ 175°C (TJ) Through Hole
PHP55N03LTA,127

PHP55N03LTA,127

MOSFET N-CH 25V 55A TO220AB

NXP USA Inc.
2,257 -

RFQ

PHP55N03LTA,127

Ficha técnica

Tube TrenchMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 25 V 55A (Tc) 5V, 10V 14mOhm @ 25A, 10V 2V @ 1mA 20 nC @ 5 V ±20V 950 pF @ 25 V - 85W (Tc) -55°C ~ 175°C (TJ) Through Hole
PHP63NQ03LT,127

PHP63NQ03LT,127

MOSFET N-CH 30V 68.9A TO220AB

NXP USA Inc.
3,620 -

RFQ

PHP63NQ03LT,127

Ficha técnica

Tube TrenchMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 30 V 68.9A (Tc) 5V, 10V 13mOhm @ 25A, 10V 2.5V @ 1mA 9.6 nC @ 5 V ±20V 920 pF @ 25 V - 111W (Tc) -55°C ~ 175°C (TJ) Through Hole
PHP71NQ03LT,127

PHP71NQ03LT,127

MOSFET N-CH 30V 75A TO220AB

NXP USA Inc.
3,328 -

RFQ

PHP71NQ03LT,127

Ficha técnica

Tube TrenchMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 30 V 75A (Tc) 5V, 10V 10mOhm @ 25A, 10V 2.5V @ 1mA 13.2 nC @ 5 V ±20V 1220 pF @ 25 V - 120W (Tc) -55°C ~ 175°C (TJ) Through Hole
PHP96NQ03LT,127

PHP96NQ03LT,127

MOSFET N-CH 25V 75A TO220AB

NXP USA Inc.
3,778 -

RFQ

PHP96NQ03LT,127

Ficha técnica

Tube TrenchMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 25 V 75A (Tc) 5V, 10V 4.95mOhm @ 25A, 10V 2V @ 1mA 26.7 nC @ 5 V ±20V 2200 pF @ 25 V - 115W (Tc) -55°C ~ 175°C (TJ) Through Hole
PHT11N06LT,135

PHT11N06LT,135

MOSFET N-CH 55V 4.9A SOT223

NXP USA Inc.
2,907 -

RFQ

Tape & Reel (TR),Bulk TrenchMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 55 V 4.9A (Ta) 5V 40mOhm @ 5A, 5V 2V @ 1mA 17 nC @ 5 V ±13V 1400 pF @ 25 V - 1.8W (Ta), 8.3W (Tc) -55°C ~ 150°C (TJ) Surface Mount
PHX14NQ20T,127

PHX14NQ20T,127

MOSFET N-CH 200V 7.6A TO220F

NXP USA Inc.
3,203 -

RFQ

PHX14NQ20T,127

Ficha técnica

Tube TrenchMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 200 V 7.6A (Tc) 10V 230mOhm @ 7A, 10V 4V @ 1mA 38 nC @ 10 V ±20V 1500 pF @ 25 V - 30W (Tc) -55°C ~ 150°C (TJ) Through Hole
PHX18NQ20T,127

PHX18NQ20T,127

MOSFET N-CH 200V 8.2A TO220F

NXP USA Inc.
3,292 -

RFQ

PHX18NQ20T,127

Ficha técnica

Tube TrenchMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 200 V 8.2A (Tc) 10V 180mOhm @ 8A, 10V 4V @ 1mA 40 nC @ 10 V ±20V 1850 pF @ 25 V - 30W (Tc) -55°C ~ 150°C (TJ) Through Hole
PHX23NQ10T,127

PHX23NQ10T,127

MOSFET N-CH 100V 13A TO220F

NXP USA Inc.
2,851 -

RFQ

PHX23NQ10T,127

Ficha técnica

Tube TrenchMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 100 V 13A (Tc) 10V 70mOhm @ 13A, 10V 4V @ 1mA 22 nC @ 10 V ±20V 1187 pF @ 25 V - 27W (Tc) -55°C ~ 150°C (TJ) Through Hole
PHX9NQ20T,127

PHX9NQ20T,127

MOSFET N-CH 200V 5.2A TO220F

NXP USA Inc.
2,381 -

RFQ

PHX9NQ20T,127

Ficha técnica

Tube TrenchMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 200 V 5.2A (Tc) 10V 400mOhm @ 4.5A, 10V 4V @ 1mA 24 nC @ 10 V ±20V 959 pF @ 25 V - 25W (Tc) -55°C ~ 150°C (TJ) Through Hole
PSMN003-30B,118

PSMN003-30B,118

MOSFET N-CH 30V 75A D2PAK

NXP USA Inc.
3,351 -

RFQ

PSMN003-30B,118

Ficha técnica

Tape & Reel (TR) TrenchMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 30 V 75A (Tc) 5V, 10V 2.8mOhm @ 25A, 10V 3V @ 1mA 170 nC @ 10 V ±20V 9200 pF @ 25 V - 230W (Tc) -55°C ~ 175°C (TJ) Surface Mount
PSMN004-60P,127

PSMN004-60P,127

MOSFET N-CH 60V 75A TO220AB

NXP USA Inc.
3,613 -

RFQ

Tube TrenchMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 60 V 75A (Tc) - 3.6mOhm @ 25A, 10V 4V @ 1mA 168 nC @ 10 V - 8300 pF @ 25 V - - -55°C ~ 175°C (TJ) Through Hole
IXFL60N80P

IXFL60N80P

MOSFET N-CH 800V 40A ISOPLUS264

IXYS
3,839 -

RFQ

Tube HiPerFET™, Polar Active N-Channel MOSFET (Metal Oxide) 800 V 40A (Tc) 10V 150mOhm @ 30A, 10V 5V @ 8mA 250 nC @ 10 V ±30V 18000 pF @ 25 V - 625W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXFK26N100P

IXFK26N100P

MOSFET N-CH 1000V 26A TO264AA

IXYS
3,426 -

RFQ

IXFK26N100P

Ficha técnica

Tube HiPerFET™, Polar Active N-Channel MOSFET (Metal Oxide) 1000 V 26A (Tc) 10V 390mOhm @ 13A, 10V 6.5V @ 1mA 197 nC @ 10 V ±30V 11900 pF @ 25 V - 780W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXFR20N120P

IXFR20N120P

MOSFET N-CH 1200V 13A ISOPLUS247

IXYS
3,612 -

RFQ

IXFR20N120P

Ficha técnica

Tube HiPerFET™, Polar Active N-Channel MOSFET (Metal Oxide) 1200 V 13A (Tc) 10V 630mOhm @ 10A, 10V 6.5V @ 1mA 193 nC @ 10 V ±30V 11100 pF @ 25 V - 290W (Tc) -55°C ~ 150°C (TJ) Through Hole
APT20M18B2VFRG

APT20M18B2VFRG

MOSFET N-CH 200V 100A T-MAX

Microchip Technology
3,781 -

RFQ

APT20M18B2VFRG

Ficha técnica

Tube POWER MOS V® Active N-Channel MOSFET (Metal Oxide) 200 V 100A (Tc) - 18mOhm @ 50A, 10V 4V @ 2.5mA 330 nC @ 10 V - 9880 pF @ 25 V - - - Through Hole
1500+
1500+ Média diária de RFQ
20,000.000
20,000.000 Unidade padrão do produto
1800+
1800+ Fabricantes em todo o mundo
15,000+
15,000+ Armazém em estoque
Fudong Communication (Shenzhen) Grupo Co., Ltd.

Início

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Produto

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Telefone

Fudong Communication (Shenzhen) Grupo Co., Ltd.

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