Transistores - FETs, MOSFETs - Único

Foto: Número da peça do fabricante Disponibilidade Preço Quantidade Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IPD60R360CFD7ATMA1

IPD60R360CFD7ATMA1

MOSFET N-CH 650V 7A TO252-3-313

Infineon Technologies
1,896 -

RFQ

IPD60R360CFD7ATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) CoolMOS™ CFD7 Active N-Channel MOSFET (Metal Oxide) 650 V 7A (Tc) 10V 360mOhm @ 2.9A, 10V 4.5V @ 140µA 14 nC @ 10 V ±20V 679 pF @ 400 V - 43W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SST210 SOT-143 4L

SST210 SOT-143 4L

HIGH SPEED N-CHANNEL LATERAL DMO

Linear Integrated Systems, Inc.
4,755 -

RFQ

SST210 SOT-143 4L

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) SST210 Active N-Channel MOSFET (Metal Oxide) 30 V 50mA (Ta) 5V, 25V 50Ohm @ 1mA, 10V 1.5V @ 1µA - ±40V - - 300mW (Ta) -55°C ~ 125°C (TJ) Surface Mount
IPB100N04S4H2ATMA1

IPB100N04S4H2ATMA1

MOSFET N-CH 40V 100A TO263-3

Infineon Technologies
1,001 -

RFQ

IPB100N04S4H2ATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 40 V 100A (Tc) 10V 2.4mOhm @ 100A, 10V 4V @ 70µA 90 nC @ 10 V ±20V 7180 pF @ 25 V - 115W (Tc) -55°C ~ 175°C (TJ) Surface Mount
AUIRL7766M2TR

AUIRL7766M2TR

MOSFET N-CH 100V 10A DIRECTFET

International Rectifier
37,230 -

RFQ

AUIRL7766M2TR

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 100 V 10A (Ta) 4.5V, 10V 10mOhm @ 31A, 10V 2.5V @ 150µA 66 nC @ 4.5 V ±16V 5305 pF @ 25 V - 2.5W (Ta), 62.5W (Tc) -55°C ~ 175°C (TJ) Surface Mount
AUIRL3705ZSTRL

AUIRL3705ZSTRL

MOSFET N-CH 55V 75A D2PAK

International Rectifier
12,554 -

RFQ

AUIRL3705ZSTRL

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 55 V 75A (Tc) - 8mOhm @ 52A, 10V 3V @ 250µA 60 nC @ 5 V - 2880 pF @ 25 V - 130W (Tc) -55°C ~ 175°C (TJ) Surface Mount
BSB165N15NZ3G

BSB165N15NZ3G

BSB165N15 - 12V-300V N-CHANNEL P

Infineon Technologies
4,337 -

RFQ

BSB165N15NZ3G

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
DI110N15PQ

DI110N15PQ

MOSFET, 150V, 110A, 56W

Diotec Semiconductor
20,000 -

RFQ

DI110N15PQ

Ficha técnica

Tape & Reel (TR),Bulk - Active N-Channel MOSFET (Metal Oxide) 150 V 110A (Tc) 10V 12mOhm @ 60A, 10V 5V @ 250µA 77 nC @ 10 V ±20V 3700 pF @ 75 V - 56W (Tc) -55°C ~ 150°C (TJ) Surface Mount
AUIRF2805STRL

AUIRF2805STRL

MOSFET N-CH 55V 135A D2PAK

International Rectifier
24,000 -

RFQ

AUIRF2805STRL

Ficha técnica

Bulk HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 55 V 135A (Tc) - 4.7mOhm @ 104A, 10V 4V @ 250µA 230 nC @ 10 V - 5110 pF @ 25 V - 200W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPD380P06NMATMA1

IPD380P06NMATMA1

MOSFET P-CH 60V 35A TO252-3

Infineon Technologies
1,227 -

RFQ

IPD380P06NMATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ Active P-Channel MOSFET (Metal Oxide) 60 V 35A (Tc) 10V 38mOhm @ 35A, 10V 4V @ 1.7mA 63 nC @ 10 V ±20V 2500 pF @ 30 V - 125W (Tc) -55°C ~ 175°C (TJ) Surface Mount
AUIRF3205

AUIRF3205

AUIRF3205 - 55V-60V N-CHANNEL AU

International Rectifier
9,950 -

RFQ

AUIRF3205

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 55 V 75A (Tc) 10V 8mOhm @ 62A, 10V 4V @ 250µA 146 nC @ 10 V ±20V 3247 pF @ 25 V - 200W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRFSL7430PBF

IRFSL7430PBF

MOSFET N-CH 40V 195A D2PAK

International Rectifier
4,360 -

RFQ

IRFSL7430PBF

Ficha técnica

Bulk HEXFET®, StrongIRFET™ Active N-Channel MOSFET (Metal Oxide) 40 V 195A (Tc) 6V, 10V 1.2mOhm @ 100A, 10V 3.9V @ 250µA 460 nC @ 10 V ±20V 14240 pF @ 25 V - 375W (Tc) -55°C ~ 175°C (TJ) Surface Mount
FQA13N50CF

FQA13N50CF

MOSFET N-CH 500V 15A TO3PN

Fairchild Semiconductor
2,481 -

RFQ

FQA13N50CF

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 500 V 15A (Tc) 10V 480mOhm @ 7.5A, 10V 4V @ 250µA 56 nC @ 10 V ±30V 2055 pF @ 25 V - 218W (Tc) -55°C ~ 150°C (TJ) Through Hole
NP80N06MLG-S18-AY

NP80N06MLG-S18-AY

NP80N06MLG-S18-AY - SWITCHINGN-C

Renesas
22,200 -

RFQ

Bulk - Obsolete N-Channel MOSFET (Metal Oxide) 60 V 80A (Tc) 4.5V, 10V 8.6mOhm @ 40A, 10V 2.5V @ 250µA 128 nC @ 10 V ±20V 6900 pF @ 25 V - 1.8W (Ta), 115W (Tc) 175°C Through Hole
AUIRFBA1405

AUIRFBA1405

MOSFET N-CH 55V 95A SUPER-220

International Rectifier
2,024 -

RFQ

AUIRFBA1405

Ficha técnica

Bulk HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 55 V 95A (Tc) 10V 5mOhm @ 101A, 10V 4V @ 250µA 260 nC @ 10 V ±20V 5480 pF @ 25 V - 330W (Tc) -40°C ~ 175°C (TJ) Through Hole
APT1201R4BFLLG

APT1201R4BFLLG

MOSFET N-CH 1200V 9A TO247

Microchip Technology
2,374 -

RFQ

APT1201R4BFLLG

Ficha técnica

Tube POWER MOS 7® Active N-Channel MOSFET (Metal Oxide) 1200 V 9A (Tc) 10V 1.5Ohm @ 4.5A, 10V 5V @ 1mA 75 nC @ 10 V ±30V 2030 pF @ 25 V - 300W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXFR44N50Q3

IXFR44N50Q3

MOSFET N-CH 500V 25A ISOPLUS247

IXYS
3,991 -

RFQ

IXFR44N50Q3

Ficha técnica

Tube HiPerFET™, Q3 Class Active N-Channel MOSFET (Metal Oxide) 500 V 25A (Tc) 10V 154mOhm @ 22A, 10V 6.5V @ 4mA 93 nC @ 10 V ±30V 4800 pF @ 25 V - 300W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXFN280N07

IXFN280N07

MOSFET N-CH 70V 280A SOT-227B

IXYS
3,811 -

RFQ

IXFN280N07

Ficha técnica

Tube HiPerFET™ Not For New Designs N-Channel MOSFET (Metal Oxide) 70 V 280A (Tc) 10V 5mOhm @ 120A, 10V 4V @ 8mA 420 nC @ 10 V ±20V 9400 pF @ 25 V - 600W (Tc) -55°C ~ 150°C (TJ) Chassis Mount
IXTT140N075L2HV

IXTT140N075L2HV

MOSFET N-CH 75V 140A TO268HV

IXYS
3,935 -

RFQ

Tube Linear L2™ Active N-Channel MOSFET (Metal Oxide) 75 V 140A (Tc) 10V 11mOhm @ 70A, 10V 4.5V @ 250µA 275 nC @ 10 V ±20V 9300 pF @ 25 V - 540W (Tc) -55°C ~ 150°C (TJ) Surface Mount
APT8030LVRG

APT8030LVRG

MOSFET N-CH 800V 27A TO264

Microchip Technology
2,242 -

RFQ

APT8030LVRG

Ficha técnica

Tube POWER MOS V® Active N-Channel MOSFET (Metal Oxide) 800 V 27A (Tc) - 300mOhm @ 500mA, 10V 4V @ 2.5mA 510 nC @ 10 V - 7900 pF @ 25 V - - - Through Hole
APT34F100B2

APT34F100B2

MOSFET N-CH 1000V 35A T-MAX

Microchip Technology
3,403 -

RFQ

APT34F100B2

Ficha técnica

Tube POWER MOS 8™ Active N-Channel MOSFET (Metal Oxide) 1000 V 35A (Tc) 10V 380mOhm @ 18A, 10V 5V @ 2.5mA 305 nC @ 10 V ±30V 9835 pF @ 25 V - 1135W (Tc) -55°C ~ 150°C (TJ) Through Hole
1500+
1500+ Média diária de RFQ
20,000.000
20,000.000 Unidade padrão do produto
1800+
1800+ Fabricantes em todo o mundo
15,000+
15,000+ Armazém em estoque
Fudong Communication (Shenzhen) Grupo Co., Ltd.

Início

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Produto

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Telefone

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Usuário