Transistores - FETs, MOSFETs - Único

Foto: Número da peça do fabricante Disponibilidade Preço Quantidade Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IRF2807STRLPBF

IRF2807STRLPBF

MOSFET N-CH 75V 82A D2PAK

Infineon Technologies
1,402 -

RFQ

IRF2807STRLPBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) HEXFET® Active N-Channel MOSFET (Metal Oxide) 75 V 82A (Tc) 10V 13mOhm @ 43A, 10V 4V @ 250µA 160 nC @ 10 V ±20V 3820 pF @ 25 V - 230W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRF6794MTR1PBF

IRF6794MTR1PBF

MOSFET N-CH 25V 32A DIRECTFET

Infineon Technologies
624 -

RFQ

IRF6794MTR1PBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 25 V 32A (Ta), 200A (Tc) 4.5V, 10V 1.7mOhm @ 32A, 10V 2.35V @ 100µA 47 nC @ 4.5 V ±20V 4420 pF @ 13 V Schottky Diode (Body) 2.8W (Ta), 100W (Tc) -40°C ~ 150°C (TJ) Surface Mount
ISC0805NLSATMA1

ISC0805NLSATMA1

MOSFET N-CH 100V 13A/71A TDSON

Infineon Technologies
3,802 -

RFQ

ISC0805NLSATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ 5 Active N-Channel MOSFET (Metal Oxide) 100 V 13A (Ta), 71A (Tc) 4.5V, 10V 7.8mOhm @ 50A, 10V 2.3V @ 40µA 33 nC @ 10 V ±20V 2200 pF @ 50 V - 2.5W (Ta), 74W (Tc) -55°C ~ 150°C (TJ) Surface Mount
NP32N055SLE-E1-AZ

NP32N055SLE-E1-AZ

NP32N055 - POWER FIELD-EFFECT TR

Renesas
60,000 -

RFQ

Bulk - Obsolete N-Channel MOSFET (Metal Oxide) 55 V 32A (Ta) 4.5V, 10V 24mOhm @ 16A, 10V 2.5V @ 250µA 41 nC @ 10 V ±20V 2000 pF @ 25 V - 1.2W (Ta), 66W (Tc) 175°C Surface Mount
IPLK60R1K0PFD7ATMA1

IPLK60R1K0PFD7ATMA1

MOSFET N-CH 600V 5.2A THIN-PAK

Infineon Technologies
4,280 -

RFQ

IPLK60R1K0PFD7ATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) CoolMOS™ PFD7 Active N-Channel MOSFET (Metal Oxide) 600 V 5.2A (Tc) 10V 1Ohm @ 1A, 10V 4.5V @ 50µA 6 nC @ 10 V ±20V 230 pF @ 400 V - 31.3W (Tc) -55°C ~ 150°C (TJ) Surface Mount
FCP9N60N

FCP9N60N

MOSFET N-CH 600V 9A TO220-3

Fairchild Semiconductor
35,008 -

RFQ

FCP9N60N

Ficha técnica

Bulk SuperMOS™ Active N-Channel MOSFET (Metal Oxide) 600 V 9A (Tc) 10V 385mOhm @ 4.5A, 10V 4V @ 250µA 29 nC @ 10 V ±30V 1240 pF @ 100 V - 83.3W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRF6678

IRF6678

MOSFET N-CH 30V 30A DIRECTFET

Infineon Technologies
4,885 -

RFQ

IRF6678

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 30A (Ta), 150A (Tc) 4.5V, 10V 2.2mOhm @ 30A, 10V 2.25V @ 250µA 65 nC @ 4.5 V ±20V 5640 pF @ 15 V - 2.8W (Ta), 89W (Tc) -40°C ~ 150°C (TJ) Surface Mount
FQA7N80C-F109

FQA7N80C-F109

POWER MOSFET, N-CHANNEL, QFET, 8

onsemi
26,300 -

RFQ

FQA7N80C-F109

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
AUIRL1404ZS

AUIRL1404ZS

MOSFET N-CH 40V 160A D2PAK

International Rectifier
11,878 -

RFQ

AUIRL1404ZS

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 40 V 160A (Tc) 4.5V, 10V 3.1mOhm @ 75A, 10V 2.7V @ 250µA 110 nC @ 5 V ±16V 5080 pF @ 25 V - 200W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPD50N10S3L16ATMA1

IPD50N10S3L16ATMA1

MOSFET N-CH 100V 50A TO252-3

Infineon Technologies
2,286 -

RFQ

IPD50N10S3L16ATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 100 V 50A (Tc) 4.5V, 10V 15mOhm @ 50A, 10V 2.4V @ 60µA 64 nC @ 10 V ±20V 4180 pF @ 25 V - 100W (Tc) -55°C ~ 175°C (TJ) Surface Mount
BUK761R6-40E,118

BUK761R6-40E,118

MOSFET N-CH 40V 120A D2PAK

NXP USA Inc.
2,656 -

RFQ

BUK761R6-40E,118

Ficha técnica

Bulk Automotive, AEC-Q101, TrenchMOS™ Active N-Channel MOSFET (Metal Oxide) 40 V 120A (Tc) 10V 1.6mOhm @ 25A, 10V 4V @ 1mA 145 nC @ 10 V ±20V 11340 pF @ 25 V - 349W (Tc) -55°C ~ 175°C (TJ) Surface Mount
BSC009NE2LSATMA1

BSC009NE2LSATMA1

MOSFET N-CH 25V 41A/100A TDSON

Infineon Technologies
159 -

RFQ

BSC009NE2LSATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 25 V 41A (Ta), 100A (Tc) 4.5V, 10V 0.9mOhm @ 30A, 10V 2.2V @ 250µA 126 nC @ 10 V ±20V 5800 pF @ 12 V - 2.5W (Ta), 96W (Tc) -55°C ~ 150°C (TJ) Surface Mount
UPA1740TP-E1-AZ

UPA1740TP-E1-AZ

UPA1740TP-E1-AZ - MOS FIELD EFFE

Renesas
282,500 -

RFQ

Bulk - Obsolete N-Channel MOSFET (Metal Oxide) 200 V 7A (Tc) 10V 440mOhm @ 3.5A, 10V 4.5V @ 1mA 12 nC @ 10 V ±30V 420 pF @ 10 V - 1W (Ta), 22W (Tc) 150°C Surface Mount
AUIRL1404Z

AUIRL1404Z

MOSFET N-CH 40V 160A TO220

International Rectifier
22,760 -

RFQ

AUIRL1404Z

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 40 V 160A (Tc) 4.5V, 10V 3.1mOhm @ 75A, 10V 2.7V @ 250µA 110 nC @ 5 V ±16V 5080 pF @ 25 V - 200W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPB123N10N3GATMA1

IPB123N10N3GATMA1

MOSFET N-CH 100V 58A D2PAK

Infineon Technologies
1,457 -

RFQ

IPB123N10N3GATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 100 V 58A (Tc) 6V, 10V 12.3mOhm @ 46A, 10V 3.5V @ 46µA 35 nC @ 10 V ±20V 2500 pF @ 50 V - 94W (Tc) -55°C ~ 175°C (TJ) Surface Mount
BSC040N08NS5ATMA1

BSC040N08NS5ATMA1

MOSFET N-CH 80V 100A TDSON

Infineon Technologies
4,690 -

RFQ

BSC040N08NS5ATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 80 V 100A (Tc) 6V, 10V 4mOhm @ 50A, 10V 3.8V @ 67µA 54 nC @ 10 V ±20V 3900 pF @ 40 V - 2.5W (Ta), 104W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SST211 SOT-143 4L

SST211 SOT-143 4L

HIGH SPEED N-CHANNEL LATERAL DMO

Linear Integrated Systems, Inc.
9,015 -

RFQ

SST211 SOT-143 4L

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) SST211 Active N-Channel MOSFET (Metal Oxide) 30 V 50mA (Ta) 5V, 25V 50Ohm @ 1mA, 10V 1.5V @ 1µA - +25V, -300mV - - 300mW (Ta) -55°C ~ 125°C (TJ) Surface Mount
IPL60R360P6SATMA1

IPL60R360P6SATMA1

MOSFET N-CH 600V 11.3A 8THINPAK

Infineon Technologies
3,701 -

RFQ

IPL60R360P6SATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) CoolMOS™ P6 Active N-Channel MOSFET (Metal Oxide) 600 V 11.3A (Tc) 10V 360mOhm @ 4.5A, 10V 4.5V @ 370µA 22 nC @ 10 V ±20V 1010 pF @ 100 V - 89.3W (Tc) -40°C ~ 150°C (TJ) Surface Mount
IPB35N10S3L26ATMA1

IPB35N10S3L26ATMA1

MOSFET N-CH 100V 35A D2PAK

Infineon Technologies
1,460 -

RFQ

IPB35N10S3L26ATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101, OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 100 V 35A (Tc) 4.5V, 10V 26.3mOhm @ 35A, 10V 2.4V @ 39µA 39 nC @ 10 V ±20V 2700 pF @ 25 V - 71W (Tc) -55°C ~ 175°C (TJ) Surface Mount
3N163 SOT-143 4L

3N163 SOT-143 4L

P-CHANNEL, SINGLE ENHANCEMENT MO

Linear Integrated Systems, Inc.
4,854 -

RFQ

3N163 SOT-143 4L

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active P-Channel MOSFET (Metal Oxide) 40 V 50mA 20V 250Ohm @ 100µA, 20V 5V @ 10µA - -6.5V 3.5 pF @ 15 V - 350mW - Surface Mount
1500+
1500+ Média diária de RFQ
20,000.000
20,000.000 Unidade padrão do produto
1800+
1800+ Fabricantes em todo o mundo
15,000+
15,000+ Armazém em estoque
Fudong Communication (Shenzhen) Grupo Co., Ltd.

Início

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Produto

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Telefone

Fudong Communication (Shenzhen) Grupo Co., Ltd.

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