Transistores - FETs, MOSFETs - Único

Foto: Número da peça do fabricante Disponibilidade Preço Quantidade Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
APT10045LLLG

APT10045LLLG

MOSFET N-CH 1000V 23A TO264

Microchip Technology
2,069 -

RFQ

APT10045LLLG

Ficha técnica

Tube POWER MOS 7® Active N-Channel MOSFET (Metal Oxide) 1000 V 23A (Tc) - 450mOhm @ 11.5A, 10V 5V @ 2.5mA 154 nC @ 10 V - 4350 pF @ 25 V - - - Through Hole
IXFX26N120P

IXFX26N120P

MOSFET N-CH 1200V 26A PLUS247-3

IXYS
3,003 -

RFQ

IXFX26N120P

Ficha técnica

Tube HiPerFET™, Polar Active N-Channel MOSFET (Metal Oxide) 1200 V 26A (Tc) 10V 500mOhm @ 13A, 10V 6.5V @ 1mA 225 nC @ 10 V ±30V 16000 pF @ 25 V - 960W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXFB52N90P

IXFB52N90P

MOSFET N-CH 900V 52A PLUS264

IXYS
2,809 -

RFQ

IXFB52N90P

Ficha técnica

Tube HiPerFET™, Polar Active N-Channel MOSFET (Metal Oxide) 900 V 52A (Tc) 10V 160mOhm @ 26A, 10V 6.5V @ 1mA 308 nC @ 10 V ±30V 19000 pF @ 25 V - 1250W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXKF40N60SCD1

IXKF40N60SCD1

MOSFET N-CH 600V 41A I4PAC

IXYS
3,034 -

RFQ

IXKF40N60SCD1

Ficha técnica

Tube CoolMOS™ Active N-Channel MOSFET (Metal Oxide) 600 V 41A (Tc) 10V 70mOhm @ 25A, 10V 3.9V @ 3mA 250 nC @ 10 V ±20V - Super Junction - -40°C ~ 150°C (TJ) Through Hole
C3M0025065J1

C3M0025065J1

650V 25 M SIC MOSFET

Wolfspeed, Inc.
2,745 -

RFQ

C3M0025065J1

Ficha técnica

Tube C3M™ Active N-Channel SiCFET (Silicon Carbide) 650 V 80A (Tc) 15V 34mOhm @ 33.5A, 15V 3.6V @ 9.22mA 109 nC @ 15 V +19V, -8V 2980 pF @ 400 V - 271W (Tc) -40°C ~ 150°C (TJ) Surface Mount
APT1201R2BFLLG

APT1201R2BFLLG

MOSFET N-CH 1200V 12A TO247

Microchip Technology
2,622 -

RFQ

APT1201R2BFLLG

Ficha técnica

Tube POWER MOS 7® Active N-Channel MOSFET (Metal Oxide) 1200 V 12A (Tc) - 1.25Ohm @ 6A, 10V 5V @ 1mA 100 nC @ 10 V - 2540 pF @ 25 V - - - Through Hole
MKE38RK600DFEL-TUB

MKE38RK600DFEL-TUB

MOSFET N-CH 600V 50A SMPD

IXYS
2,873 -

RFQ

MKE38RK600DFEL-TUB

Ficha técnica

Bulk CoolMOS™ Active N-Channel MOSFET (Metal Oxide) 600 V 50A (Tc) 10V 45mOhm @ 44A, 10V 3.5V @ 3mA 190 nC @ 10 V ±20V 6800 pF @ 100 V - - -55°C ~ 150°C (TJ) Surface Mount
APT1001R6BFLLG

APT1001R6BFLLG

MOSFET N-CH 1000V 8A TO247

Microchip Technology
2,502 -

RFQ

Tube POWER MOS 7® Active N-Channel MOSFET (Metal Oxide) 1000 V 8A (Tc) 10V 1.6Ohm @ 4A, 10V 5V @ 1mA 55 nC @ 10 V ±30V 1320 pF @ 25 V - 266W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXFR48N60Q3

IXFR48N60Q3

MOSFET N-CH 600V 32A ISOPLUS247

IXYS
3,891 -

RFQ

IXFR48N60Q3

Ficha técnica

Tube HiPerFET™, Q3 Class Active N-Channel MOSFET (Metal Oxide) 600 V 32A (Tc) 10V 154mOhm @ 24A, 10V 6.5V @ 4mA 140 nC @ 10 V ±30V 7020 pF @ 25 V - 500W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXFX24N100Q3

IXFX24N100Q3

MOSFET N-CH 1000V 24A PLUS247-3

IXYS
2,504 -

RFQ

IXFX24N100Q3

Ficha técnica

Tube HiPerFET™, Q3 Class Active N-Channel MOSFET (Metal Oxide) 1000 V 24A (Tc) 10V 440mOhm @ 12A, 10V 6.5V @ 4mA 140 nC @ 10 V ±30V 7200 pF @ 25 V - 1000W (Tc) -55°C ~ 150°C (TJ) Through Hole
APT10045B2FLLG

APT10045B2FLLG

MOSFET N-CH 1000V 23A T-MAX

Microchip Technology
3,948 -

RFQ

APT10045B2FLLG

Ficha técnica

Tube POWER MOS 7® Active N-Channel MOSFET (Metal Oxide) 1000 V 23A (Tc) - 460mOhm @ 11.5A, 10V 5V @ 2.5mA 154 nC @ 10 V - 4350 pF @ 25 V - - - Through Hole
APT10045LFLLG

APT10045LFLLG

MOSFET N-CH 1000V 23A TO264

Microchip Technology
2,065 -

RFQ

APT10045LFLLG

Ficha técnica

Tube POWER MOS 7® Active N-Channel MOSFET (Metal Oxide) 1000 V 23A (Tc) - 460mOhm @ 11.5A, 10V 5V @ 2.5mA 154 nC @ 10 V - 4350 pF @ 25 V - - - Through Hole
APT6010B2LLG

APT6010B2LLG

MOSFET N-CH 600V 54A T-MAX

Microchip Technology
2,484 -

RFQ

APT6010B2LLG

Ficha técnica

Tube POWER MOS 7® Active N-Channel MOSFET (Metal Oxide) 600 V 54A (Tc) 10V 100mOhm @ 27A, 10V 5V @ 2.5mA 150 nC @ 10 V ±30V 6710 pF @ 25 V - 690W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXFK20N120P

IXFK20N120P

MOSFET N-CH 1200V 20A TO264AA

IXYS
2,903 -

RFQ

IXFK20N120P

Ficha técnica

Tube HiPerFET™, Polar Active N-Channel MOSFET (Metal Oxide) 1200 V 20A (Tc) 10V 570mOhm @ 10A, 10V 6.5V @ 1mA 193 nC @ 10 V ±30V 11100 pF @ 25 V - 780W (Tc) -55°C ~ 150°C (TJ) Through Hole
FMD40-06KC

FMD40-06KC

MOSFET N-CH 600V 38A I4PAC

IXYS
2,225 -

RFQ

FMD40-06KC

Ficha técnica

Tube HiPerFET™ Active N-Channel MOSFET (Metal Oxide) 600 V 38A (Tc) 10V 70mOhm @ 20A, 10V 3.9V @ 2.7mA 250 nC @ 10 V ±20V - Super Junction - -55°C ~ 150°C (TJ) Through Hole
FDM47-06KC5

FDM47-06KC5

MOSFET N-CH 600V 47A I4PAC

IXYS
3,673 -

RFQ

FDM47-06KC5

Ficha técnica

Tube CoolMOS™, HiPerDyn™ Active N-Channel MOSFET (Metal Oxide) 600 V 47A (Tc) 10V 45mOhm @ 44A, 10V 3.5V @ 3mA 190 nC @ 10 V ±20V 6800 pF @ 100 V - - -55°C ~ 150°C (TJ) Through Hole
APT38F50J

APT38F50J

MOSFET N-CH 500V 38A ISOTOP

Microchip Technology
3,689 -

RFQ

APT38F50J

Ficha técnica

Tube POWER MOS 8™ Active N-Channel MOSFET (Metal Oxide) 500 V 38A (Tc) 10V 100mOhm @ 28A, 10V 5V @ 2.5mA 220 nC @ 10 V ±30V 8800 pF @ 25 V - 355W (Tc) -55°C ~ 150°C (TJ) Chassis Mount
IXFK64N50Q3

IXFK64N50Q3

MOSFET N-CH 500V 64A TO264AA

IXYS
3,410 -

RFQ

IXFK64N50Q3

Ficha técnica

Tube HiPerFET™, Q3 Class Active N-Channel MOSFET (Metal Oxide) 500 V 64A (Tc) 10V 85mOhm @ 32A, 10V 6.5V @ 4mA 145 nC @ 10 V ±30V 6950 pF @ 25 V - 1000W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXFK48N60Q3

IXFK48N60Q3

MOSFET N-CH 600V 48A TO264AA

IXYS
2,891 -

RFQ

IXFK48N60Q3

Ficha técnica

Tube HiPerFET™, Q3 Class Active N-Channel MOSFET (Metal Oxide) 600 V 48A (Tc) 10V 140mOhm @ 24A, 10V 6.5V @ 4mA 140 nC @ 10 V ±30V 7020 pF @ 25 V - 1000W (Tc) -55°C ~ 150°C (TJ) Through Hole
FMD47-06KC5

FMD47-06KC5

MOSFET N-CH 600V 47A I4PAC

IXYS
3,424 -

RFQ

FMD47-06KC5

Ficha técnica

Tube CoolMOS™ Active N-Channel MOSFET (Metal Oxide) 600 V 47A (Tc) 10V 45mOhm @ 44A, 10V 3.5V @ 3mA 190 nC @ 10 V ±20V 6800 pF @ 100 V - - -55°C ~ 150°C (TJ) Through Hole
1500+
1500+ Média diária de RFQ
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20,000.000 Unidade padrão do produto
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1800+ Fabricantes em todo o mundo
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15,000+ Armazém em estoque
Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

Telefone

Fudong Communication (Shenzhen) Grupo Co., Ltd.

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