Transistores - FETs, MOSFETs - Único

Foto: Número da peça do fabricante Disponibilidade Preço Quantidade Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
FQPF33N10L

FQPF33N10L

POWER FIELD-EFFECT TRANSISTOR, 1

Fairchild Semiconductor
15,230 -

RFQ

FQPF33N10L

Ficha técnica

Bulk QFET® Active N-Channel MOSFET (Metal Oxide) 100 V 18A (Tc) 5V, 10V 52mOhm @ 9A, 10V 2V @ 250µA 40 nC @ 5 V ±20V 1630 pF @ 25 V - 41W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPU80R750P7AKMA1

IPU80R750P7AKMA1

IPU80R750 - 800V COOLMOS N-CHANN

Infineon Technologies
14,025 -

RFQ

IPU80R750P7AKMA1

Ficha técnica

Bulk CoolMOS™ P7 Active N-Channel MOSFET (Metal Oxide) 800 V 7A (Tc) 10V 750mOhm @ 2.7A, 10V 3.5V @ 140µA 17 nC @ 10 V ±20V 460 pF @ 500 V - 51W (Tc) -55°C ~ 150°C (TJ) Through Hole
IAUC60N04S6L039ATMA1

IAUC60N04S6L039ATMA1

IAUC60N04S6L039ATMA1

Infineon Technologies
4,256 -

RFQ

IAUC60N04S6L039ATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101, OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 40 V 60A (Tc) 4.5V, 10V 4.02mOhm @ 30A, 10V 2V @ 14µA 20 nC @ 10 V ±16V 1179 pF @ 25 V - 42W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFH8324TRPBF

IRFH8324TRPBF

MOSFET N-CH 30V 23A/90A PQFN

Infineon Technologies
2,238 -

RFQ

IRFH8324TRPBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) HEXFET® Active N-Channel MOSFET (Metal Oxide) 30 V 23A (Ta), 90A (Tc) 4.5V, 10V 4.1mOhm @ 20A, 10V 2.35V @ 50µA 31 nC @ 10 V ±20V 2380 pF @ 10 V - 3.6W (Ta), 54W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IPD14N06S280ATMA2

IPD14N06S280ATMA2

MOSFET N-CH 55V 17A TO252-31

Infineon Technologies
2,460 -

RFQ

IPD14N06S280ATMA2

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 55 V 17A (Tc) 10V 80mOhm @ 7A, 10V 4V @ 14µA 10 nC @ 10 V ±20V 293 pF @ 25 V - 47W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPD60R1K5PFD7SAUMA1

IPD60R1K5PFD7SAUMA1

MOSFET N-CH 650V 3.6A TO252

Infineon Technologies
1,615 -

RFQ

Tape & Reel (TR),Cut Tape (CT) CoolMOS™PFD7 Active N-Channel MOSFET (Metal Oxide) 650 V 3.6A (Tc) 10V 1.5Ohm @ 700mA, 10V 4.5V @ 40µA 4.6 nC @ 10 V ±20V 169 pF @ 400 V - 22W (Tc) -40°C ~ 150°C (TJ) Surface Mount
FCU2250N80Z

FCU2250N80Z

MOSFET N-CH 800V 2.6A I-PAK

Fairchild Semiconductor
96,353 -

RFQ

FCU2250N80Z

Ficha técnica

Bulk SuperFET® II Active N-Channel MOSFET (Metal Oxide) 800 V 2.6A (Tc) 10V 2.25Ohm @ 1.3A, 10V 4.5V @ 260µA 14 nC @ 10 V ±20V 585 pF @ 100 V - 39W (Tc) -55°C ~ 150°C (TJ) Through Hole
FDC697P

FDC697P

8A, 20V, 0.02OHM, P-CHANNEL MOSF

Fairchild Semiconductor
69,806 -

RFQ

FDC697P

Ficha técnica

Bulk PowerTrench® Active P-Channel MOSFET (Metal Oxide) 20 V 8A (Ta) 1.8V, 4.5V 20mOhm @ 8A, 4.5V 1.5V @ 250µA 55 nC @ 4.5 V ±8V 3524 pF @ 10 V - 2W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IPP70N04S406AKSA1

IPP70N04S406AKSA1

MOSFET_(20V,40V)

Infineon Technologies
11,900 -

RFQ

IPP70N04S406AKSA1

Ficha técnica

Bulk OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 40 V 70A (Tc) 10V 6.5mOhm @ 70A, 10V 4V @ 26µA 32 nC @ 10 V ±20V 2550 pF @ 25 V - 58W (Tc) -55°C ~ 175°C (TJ) Through Hole
PJD50N10AL-AU_L2_000A1

PJD50N10AL-AU_L2_000A1

100V N-CHANNEL ENHANCEMENT MODE

Panjit International Inc.
1,968 -

RFQ

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 100 V 6.3A (Ta), 42A (Tc) 4.5V, 10V 25mOhm @ 20A, 10V 2.5V @ 250µA 29 nC @ 10 V ±20V 1485 pF @ 30 V - 2W (Ta), 83W (Tc) -55°C ~ 150°C (TJ) Surface Mount
ISZ0501NLSATMA1

ISZ0501NLSATMA1

25V, N-CH MOSFET, LOGIC LEVEL, P

Infineon Technologies
4,974 -

RFQ

Tape & Reel (TR),Cut Tape (CT) * Active - - - - - - - - - - - - - -
BSP296NH6327XTSA1

BSP296NH6327XTSA1

MOSFET N-CH 100V 1.2A SOT223-4

Infineon Technologies
1,407 -

RFQ

BSP296NH6327XTSA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 100 V 1.2A (Ta) 4.5V, 10V 600mOhm @ 1.2A, 10V 1.8V @ 100µA 6.7 nC @ 10 V ±20V 152.7 pF @ 25 V - 1.8W (Ta) -55°C ~ 150°C (TJ) Surface Mount
APT24M120B2

APT24M120B2

MOSFET N-CH 1200V 24A T-MAX

Microchip Technology
2,641 -

RFQ

APT24M120B2

Ficha técnica

Tube POWER MOS 8™ Active N-Channel MOSFET (Metal Oxide) 1200 V 24A (Tc) 10V 630mOhm @ 12A, 10V 5V @ 2.5mA 260 nC @ 10 V ±30V 8370 pF @ 25 V - 1040W (Tc) -55°C ~ 150°C (TJ) Through Hole
APT29F100L

APT29F100L

MOSFET N-CH 1000V 30A TO264

Microchip Technology
3,000 -

RFQ

APT29F100L

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 1000 V 30A (Tc) 10V 460mOhm @ 16A, 10V 5V @ 2.5mA 260 nC @ 10 V ±30V 8500 pF @ 25 V - 1040W (Tc) -55°C ~ 150°C (TJ) Through Hole
STY140NS10

STY140NS10

MOSFET N-CH 100V 140A MAX247

STMicroelectronics
3,238 -

RFQ

STY140NS10

Ficha técnica

Tube MESH OVERLAY™ Obsolete N-Channel MOSFET (Metal Oxide) 100 V 140A (Tc) 10V 11mOhm @ 70A, 10V 4V @ 250µA 600 nC @ 10 V ±20V 12600 pF @ 25 V - 450W (Tc) -55°C ~ 175°C (TJ) Through Hole
STW75N60M6-4

STW75N60M6-4

MOSFET N-CH 600V 72A TO247-4

STMicroelectronics
3,895 -

RFQ

STW75N60M6-4

Ficha técnica

Tube MDmesh™ M6 Active N-Channel MOSFET (Metal Oxide) 600 V 72A (Tc) 10V 36mOhm @ 36A, 10V 4.75V @ 250µA 106 nC @ 10 V ±25V 4850 pF @ 100 V - 446W (Tc) -55°C ~ 150°C (TJ) Through Hole
APT20M34SLLG/TR

APT20M34SLLG/TR

MOSFET N-CH 200V 74A D3PAK

Microchip Technology
2,476 -

RFQ

APT20M34SLLG/TR

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) POWER MOS 7® Active N-Channel MOSFET (Metal Oxide) 200 V 74A (Tc) 10V 34mOhm @ 37A, 10V 5V @ 1mA 60 nC @ 10 V ±30V 3660 pF @ 25 V - 403W (Tc) -55°C ~ 150°C (TJ) Surface Mount
APT5015SVFRG

APT5015SVFRG

MOSFET N-CH 500V 32A D3PAK

Microchip Technology
2,695 -

RFQ

APT5015SVFRG

Ficha técnica

Tube POWER MOS V® Active N-Channel MOSFET (Metal Oxide) 500 V 32A (Tc) 10V 150mOhm @ 16A, 10V 4V @ 1mA 300 nC @ 10 V ±30V 5280 pF @ 25 V - 370W (Tc) -55°C ~ 150°C (TJ) Surface Mount
APT8065SVRG

APT8065SVRG

MOSFET N-CH 800V 13A D3PAK

Microchip Technology
2,046 -

RFQ

APT8065SVRG

Ficha técnica

Tube POWER MOS V® Active N-Channel MOSFET (Metal Oxide) 800 V 13A (Tc) - 650mOhm @ 500mA, 10V 4V @ 1mA 225 nC @ 10 V - 3700 pF @ 25 V - - - Surface Mount
APT6029SLLG

APT6029SLLG

MOSFET N-CH 600V 21A D3PAK

Microchip Technology
2,147 -

RFQ

APT6029SLLG

Ficha técnica

Tube POWER MOS 7® Active N-Channel MOSFET (Metal Oxide) 600 V 21A (Tc) - 290mOhm @ 10.5A, 10V 5V @ 1mA 65 nC @ 10 V - 2615 pF @ 25 V - - - Surface Mount
1500+
1500+ Média diária de RFQ
20,000.000
20,000.000 Unidade padrão do produto
1800+
1800+ Fabricantes em todo o mundo
15,000+
15,000+ Armazém em estoque
Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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