Transistores - FETs, MOSFETs - Único

Foto: Número da peça do fabricante Disponibilidade Preço Quantidade Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
AOTF190A60CL

AOTF190A60CL

MOSFET N-CH 600V 20A TO220F

Alpha & Omega Semiconductor Inc.
182 -

RFQ

Tube aMOS5™ Active N-Channel MOSFET (Metal Oxide) 600 V 20A (Tj) 10V 190mOhm @ 7.6A, 10V 4.6V @ 250µA 34 nC @ 10 V ±20V 1935 pF @ 100 V - 32W (Tc) -55°C ~ 150°C (TJ) Through Hole
STP11NK40ZFP

STP11NK40ZFP

MOSFET N-CH 400V 9A TO220FP

STMicroelectronics
510 -

RFQ

STP11NK40ZFP

Ficha técnica

Tube SuperMESH™ Active N-Channel MOSFET (Metal Oxide) 400 V 9A (Tc) 10V 550mOhm @ 4.5A, 10V 4.5V @ 100µA 32 nC @ 10 V ±30V 930 pF @ 25 V - 30W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFI9620GPBF

IRFI9620GPBF

MOSFET P-CH 200V 3A TO220-3

Vishay Siliconix
203 -

RFQ

IRFI9620GPBF

Ficha técnica

Tube - Active P-Channel MOSFET (Metal Oxide) 200 V 3A (Tc) 10V 1.5Ohm @ 1.8A, 10V 4V @ 250µA 15 nC @ 10 V ±20V 340 pF @ 15 V - 30W (Tc) -55°C ~ 150°C (TJ) Through Hole
STF18N60M2

STF18N60M2

MOSFET N-CH 600V 13A TO220FP

STMicroelectronics
2,181 -

RFQ

STF18N60M2

Ficha técnica

Tube MDmesh™ II Plus Active N-Channel MOSFET (Metal Oxide) 600 V 13A (Tc) 10V 280mOhm @ 6.5A, 10V 4V @ 250µA 21.5 nC @ 10 V ±25V 791 pF @ 100 V - 25W (Tc) -55°C ~ 150°C (TJ) Through Hole
STF15N65M5

STF15N65M5

MOSFET N-CH 650V 11A TO220FP

STMicroelectronics
554 -

RFQ

STF15N65M5

Ficha técnica

Tube MDmesh™ V Active N-Channel MOSFET (Metal Oxide) 650 V 11A (Tc) 10V 340mOhm @ 5.5A, 10V 5V @ 250µA 22 nC @ 10 V ±25V 816 pF @ 100 V - 30W (Tc) 150°C (TJ) Through Hole
FDP120N10

FDP120N10

MOSFET N-CH 100V 74A TO220-3

onsemi
102 -

RFQ

FDP120N10

Ficha técnica

Tube PowerTrench® Active N-Channel MOSFET (Metal Oxide) 100 V 74A (Tc) 10V 12mOhm @ 74A, 10V 4.5V @ 250µA 86 nC @ 10 V ±20V 5605 pF @ 25 V - 170W (Tc) -55°C ~ 175°C (TJ) Through Hole
STP12NK30Z

STP12NK30Z

MOSFET N-CH 300V 9A TO220AB

STMicroelectronics
956 -

RFQ

STP12NK30Z

Ficha técnica

Tube SuperMESH™ Active N-Channel MOSFET (Metal Oxide) 300 V 9A (Tc) 10V 400mOhm @ 4.5A, 10V 4.5V @ 50µA 35 nC @ 10 V ±30V 670 pF @ 25 V - 90W (Tc) -55°C ~ 150°C (TJ) Through Hole
FCP190N65S3

FCP190N65S3

MOSFET N-CH 650V 17A TO220-3

onsemi
876 -

RFQ

FCP190N65S3

Ficha técnica

Tube SuperFET® III Active N-Channel MOSFET (Metal Oxide) 650 V 17A (Tc) 10V 190mOhm @ 8.5A, 10V 4.5V @ 1.7mA 33 nC @ 10 V ±30V 1350 pF @ 400 V - 144W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRF9Z30PBF-BE3

IRF9Z30PBF-BE3

MOSFET P-CH 50V 18A TO220AB

Vishay Siliconix
898 -

RFQ

Tube - Active P-Channel MOSFET (Metal Oxide) 50 V 18A (Tc) 10V 140mOhm @ 9.3A, 10V 4V @ 250µA 39 nC @ 10 V ±20V 900 pF @ 25 V - 74W (Tc) -55°C ~ 150°C (TJ) Through Hole
STF18N60M6

STF18N60M6

MOSFET N-CH 600V 13A TO220FP

STMicroelectronics
2,641 -

RFQ

STF18N60M6

Ficha técnica

Tube MDmesh™ M6 Active N-Channel MOSFET (Metal Oxide) 600 V 13A (Tc) 10V 280mOhm @ 6.5A, 10V 4.75V @ 250µA 16.8 nC @ 10 V ±25V 650 pF @ 100 V - 25W (Tc) -55°C ~ 150°C (TJ) Through Hole
STP6NK60ZFP

STP6NK60ZFP

MOSFET N-CH 600V 6A TO220FP

STMicroelectronics
812 -

RFQ

STP6NK60ZFP

Ficha técnica

Tube SuperMESH™ Not For New Designs N-Channel MOSFET (Metal Oxide) 600 V 6A (Tc) 10V 1.2Ohm @ 3A, 10V 4.5V @ 100µA 46 nC @ 10 V ±30V 905 pF @ 25 V - 30W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPP114N12N3GXKSA1

IPP114N12N3GXKSA1

MOSFET N-CH 120V 75A TO220-3

Infineon Technologies
220 -

RFQ

IPP114N12N3GXKSA1

Ficha técnica

Tube OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 120 V 75A (Tc) 10V 11.4mOhm @ 75A, 10V 4V @ 83µA 65 nC @ 10 V ±20V 4310 pF @ 60 V - 136W (Tc) -55°C ~ 175°C (TJ) Through Hole
SIHP15N80AE-GE3

SIHP15N80AE-GE3

MOSFET N-CH 800V 13A TO220AB

Vishay Siliconix
2,616 -

RFQ

Tube E Active N-Channel MOSFET (Metal Oxide) 800 V 13A (Tc) 10V 350mOhm @ 7.5A, 10V 4V @ 250µA 53 nC @ 10 V ±30V 1093 pF @ 100 V - 156W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXTP4N65X2

IXTP4N65X2

MOSFET N-CH 650V 4A TO220

IXYS
266 -

RFQ

IXTP4N65X2

Ficha técnica

Tube Ultra X2 Active N-Channel MOSFET (Metal Oxide) 650 V 4A (Tc) 10V 850mOhm @ 2A, 10V 5V @ 250µA 8.3 nC @ 10 V ±30V 455 pF @ 25 V - 80W (Tc) -55°C ~ 150°C (TJ) Through Hole
FQA32N20C

FQA32N20C

MOSFET N-CH 200V 32A TO3PN

onsemi
216 -

RFQ

FQA32N20C

Ficha técnica

Tube QFET® Last Time Buy N-Channel MOSFET (Metal Oxide) 200 V 32A (Tc) 10V 82mOhm @ 16A, 10V 4V @ 250µA 110 nC @ 10 V ±30V 2220 pF @ 25 V - 204W (Tc) -55°C ~ 150°C (TJ) Through Hole
STF8N80K5

STF8N80K5

MOSFET N-CH 800V 6A TO220FP

STMicroelectronics
3,339 -

RFQ

STF8N80K5

Ficha técnica

Tube SuperMESH5™ Active N-Channel MOSFET (Metal Oxide) 800 V 6A (Tc) 10V 950mOhm @ 3A, 10V 5V @ 100µA 16.5 nC @ 10 V ±30V 450 pF @ 100 V - 25W (Tc) -55°C ~ 150°C (TJ) Through Hole
FQPF70N10

FQPF70N10

MOSFET N-CH 100V 35A TO220F

onsemi
1,000 -

RFQ

FQPF70N10

Ficha técnica

Tube QFET® Active N-Channel MOSFET (Metal Oxide) 100 V 35A (Tc) 10V 23mOhm @ 17.5A, 10V 4V @ 250µA 110 nC @ 10 V ±25V 3300 pF @ 25 V - 62W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRL540SPBF

IRL540SPBF

MOSFET N-CH 100V 28A D2PAK

Vishay Siliconix
594 -

RFQ

IRL540SPBF

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 100 V 28A (Tc) 4V, 5V 77mOhm @ 17A, 5V 2V @ 250µA 64 nC @ 5 V ±10V 2200 pF @ 25 V - 3.7W (Ta), 150W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRF2204PBF

IRF2204PBF

MOSFET N-CH 40V 210A TO220AB

Infineon Technologies
401 -

RFQ

IRF2204PBF

Ficha técnica

Tube HEXFET® Active N-Channel MOSFET (Metal Oxide) 40 V 210A (Tc) 10V 3.6mOhm @ 130A, 10V 4V @ 250µA 200 nC @ 10 V ±20V 5890 pF @ 25 V - 330W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRFIBC20GPBF

IRFIBC20GPBF

MOSFET N-CH 600V 1.7A TO220-3

Vishay Siliconix
2,081 -

RFQ

IRFIBC20GPBF

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 600 V 1.7A (Tc) 10V 4.4Ohm @ 1A, 10V 4V @ 250µA 18 nC @ 10 V ±20V 350 pF @ 25 V - 30W (Tc) -55°C ~ 150°C (TJ) Through Hole
1500+
1500+ Média diária de RFQ
20,000.000
20,000.000 Unidade padrão do produto
1800+
1800+ Fabricantes em todo o mundo
15,000+
15,000+ Armazém em estoque
Fudong Communication (Shenzhen) Grupo Co., Ltd.

Início

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Produto

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Telefone

Fudong Communication (Shenzhen) Grupo Co., Ltd.

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