Transistores - FETs, MOSFETs - Único

Foto: Número da peça do fabricante Disponibilidade Preço Quantidade Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IRFI9630GPBF

IRFI9630GPBF

MOSFET P-CH 200V 4.3A TO220-3

Vishay Siliconix
148 -

RFQ

IRFI9630GPBF

Ficha técnica

Tube - Active P-Channel MOSFET (Metal Oxide) 200 V 4.3A (Tc) 10V 800mOhm @ 2.6A, 10V 4V @ 250µA 29 nC @ 10 V ±20V 700 pF @ 25 V - 35W (Tc) -55°C ~ 150°C (TJ) Through Hole
SIHA17N80AE-GE3

SIHA17N80AE-GE3

MOSFET N-CH 800V 7A TO220

Vishay Siliconix
2,875 -

RFQ

Tube - Active N-Channel MOSFET (Metal Oxide) 800 V 7A (Tc) 10V 290mOhm @ 8.5A, 10V 4V @ 250µA 62 nC @ 10 V ±30V 1260 pF @ 100 V - 34W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFZ44RPBF

IRFZ44RPBF

MOSFET N-CH 60V 50A TO220AB

Vishay Siliconix
2,456 -

RFQ

IRFZ44RPBF

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 60 V 50A (Tc) 10V 28mOhm @ 31A, 10V 4V @ 250µA 67 nC @ 10 V ±20V 1900 pF @ 25 V - 150W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRF740SPBF

IRF740SPBF

MOSFET N-CH 400V 10A D2PAK

Vishay Siliconix
423 -

RFQ

IRF740SPBF

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 400 V 10A (Tc) 10V 550mOhm @ 6A, 10V 4V @ 250µA 63 nC @ 10 V ±20V 1400 pF @ 25 V - 3.1W (Ta), 125W (Tc) -55°C ~ 150°C (TJ) Surface Mount
FDPF10N60ZUT

FDPF10N60ZUT

MOSFET N-CH 600V 9A TO220F

onsemi
1,000 -

RFQ

FDPF10N60ZUT

Ficha técnica

Tube UniFET™ Last Time Buy N-Channel MOSFET (Metal Oxide) 600 V 9A (Tc) 10V 800mOhm @ 4.5A, 10V 5V @ 250µA 40 nC @ 10 V ±30V 1980 pF @ 25 V - 42W (Tc) -55°C ~ 150°C (TJ) Through Hole
AUIRF2804STRL7P

AUIRF2804STRL7P

MOSFET N-CH 40V 240A D2PAK

International Rectifier
3,632 -

RFQ

AUIRF2804STRL7P

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 40 V 240A (Tc) 10V 1.6mOhm @ 160A, 10V 4V @ 250µA 260 nC @ 10 V ±20V 6930 pF @ 25 V - 330W (Tc) -55°C ~ 175°C (TJ) Surface Mount
FDN360P

FDN360P

SMALL SIGNAL FIELD-EFFECT TRANSI

Fairchild Semiconductor
2,781 -

RFQ

FDN360P

Ficha técnica

Bulk PowerTrench® Active P-Channel MOSFET (Metal Oxide) 30 V 2A (Ta) 4.5V, 10V 80mOhm @ 2A, 10V 3V @ 250µA 9 nC @ 10 V ±20V 298 pF @ 15 V - 500mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
IRL3715ZPBF

IRL3715ZPBF

MOSFET N-CH 20V 50A TO220AB

International Rectifier
3,011 -

RFQ

IRL3715ZPBF

Ficha técnica

Bulk HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 20 V 50A (Tc) 4.5V, 10V 11mOhm @ 15A, 10V 2.55V @ 250µA 11 nC @ 4.5 V ±20V 870 pF @ 10 V - 45W (Tc) -55°C ~ 175°C (TJ) Through Hole
FDU7N60NZTU

FDU7N60NZTU

MOSFET N-CH 600V 5.5A I-PAK

Fairchild Semiconductor
2,713 -

RFQ

FDU7N60NZTU

Ficha técnica

Bulk UniFET-II™ Active N-Channel MOSFET (Metal Oxide) 600 V 5.5A (Tc) 10V 1.25Ohm @ 2.75A, 10V 5V @ 250µA 17 nC @ 10 V ±25V 730 pF @ 25 V - 90W (Tc) -55°C ~ 150°C (TJ) Through Hole
FDB110N15A

FDB110N15A

POWER FIELD-EFFECT TRANSISTOR, 9

Fairchild Semiconductor
2,530 -

RFQ

FDB110N15A

Ficha técnica

Bulk PowerTrench® Active N-Channel MOSFET (Metal Oxide) 150 V 92A (Tc) 10V 11mOhm @ 92A, 10V 4V @ 250µA 61 nC @ 10 V ±20V 4510 pF @ 75 V - 234W (Tc) -55°C ~ 175°C (TJ) Surface Mount
AUIRF3805STRL

AUIRF3805STRL

MOSFET N-CH 55V 160A D2PAK

International Rectifier
2,513 -

RFQ

AUIRF3805STRL

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 55 V 160A (Tc) - 3.3mOhm @ 75A, 10V 4V @ 250µA 290 nC @ 10 V - 7960 pF @ 25 V - 300W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFB4620PBF

IRFB4620PBF

IRFB4620 - 12V-300V N-CHANNEL PO

International Rectifier
2,975 -

RFQ

IRFB4620PBF

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 200 V 25A (Tc) 10V 72.5mOhm @ 15A, 10V 5V @ 100µA 38 nC @ 10 V ±20V 1710 pF @ 50 V - 144W (Tc) -55°C ~ 175°C (TJ) Through Hole
AUIRF3805S-7TRL

AUIRF3805S-7TRL

MOSFET N-CH 55V 160A D2PAK

International Rectifier
3,335 -

RFQ

AUIRF3805S-7TRL

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 55 V 160A (Tc) 10V 2.6mOhm @ 140A, 10V 4V @ 250µA 200 nC @ 10 V ±20V 7820 pF @ 25 V - 300W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFB7746PBF

IRFB7746PBF

MOSFET N-CH 75V 59A TO220AB

International Rectifier
3,752 -

RFQ

IRFB7746PBF

Ficha técnica

Bulk StrongIRFET™ Active N-Channel MOSFET (Metal Oxide) 75 V 59A (Tc) 6V, 10V 10.6mOhm @ 35A, 10V 3.7V @ 100µA 83 nC @ 10 V ±20V 3049 pF @ 25 V - 99W (Tc) -55°C ~ 175°C (TJ) Through Hole
2N7002W

2N7002W

SMALL SIGNAL FIELD-EFFECT TRANSI

Fairchild Semiconductor
2,753 -

RFQ

2N7002W

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 60 V 115mA (Ta) 5V, 10V 7.5Ohm @ 50mA, 5V 2V @ 250µA - ±20V 50 pF @ 25 V - 200mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
IRFH5007TRPBF

IRFH5007TRPBF

IRFH5007 - 12V-300V N-CHANNEL PO

International Rectifier
2,509 -

RFQ

IRFH5007TRPBF

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 75 V 17A (Ta), 100A (Tc) 10V 5.9mOhm @ 50A, 10V 4V @ 150µA 98 nC @ 10 V ±20V 4290 pF @ 25 V - 3.6W (Ta), 156W (Tc) -55°C ~ 150°C (TJ) Surface Mount
FQP8N90C

FQP8N90C

MOSFET N-CH 900V 6.3A TO220-3

Fairchild Semiconductor
2,288 -

RFQ

FQP8N90C

Ficha técnica

Bulk QFET® Active N-Channel MOSFET (Metal Oxide) 900 V 6.3A (Tc) 10V 1.9Ohm @ 3.15A, 10V 5V @ 250µA 45 nC @ 10 V ±30V 2080 pF @ 25 V - 171W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRF6648TRPBF

IRF6648TRPBF

IRF6648 - 12V-300V N-CHANNEL POW

International Rectifier
3,910 -

RFQ

IRF6648TRPBF

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 60 V 86A (Tc) 10V 7mOhm @ 17A, 10V 4.9V @ 150µA 50 nC @ 10 V ±20V 2120 pF @ 25 V - 2.8W (Ta), 89W (Tc) -40°C ~ 150°C (TJ) Surface Mount
FDPF12N60NZ

FDPF12N60NZ

POWER FIELD-EFFECT TRANSISTOR, 1

Fairchild Semiconductor
2,686 -

RFQ

FDPF12N60NZ

Ficha técnica

Bulk UniFET-II™ Active N-Channel MOSFET (Metal Oxide) 600 V 12A (Tc) 10V 650mOhm @ 6A, 10V 5V @ 250µA 34 nC @ 10 V ±30V 1676 pF @ 25 V - 39W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFP4110PBF

IRFP4110PBF

IRFP4110 - 12V-300V N-CHANNEL PO

International Rectifier
3,702 -

RFQ

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 100 V 120A (Tc) 10V 4.5mOhm @ 75A, 10V 4V @ 250µA 210 nC @ 10 V ±20V 9620 pF @ 50 V - 370W (Tc) -55°C ~ 175°C (TJ) Through Hole
1500+
1500+ Média diária de RFQ
20,000.000
20,000.000 Unidade padrão do produto
1800+
1800+ Fabricantes em todo o mundo
15,000+
15,000+ Armazém em estoque
Fudong Communication (Shenzhen) Grupo Co., Ltd.

Início

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Produto

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Telefone

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Usuário