Transistores - FETs, MOSFETs - Único

Foto: Número da peça do fabricante Disponibilidade Preço Quantidade Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
AUIRFS4127TRL

AUIRFS4127TRL

MOSFET N-CH 200V 72A D2PAK

International Rectifier
3,731 -

RFQ

AUIRFS4127TRL

Ficha técnica

Bulk Automotive, AEC-Q101, HEXFET® Active N-Channel MOSFET (Metal Oxide) 200 V 72A (Tc) 10V 22mOhm @ 44A, 10V 5V @ 250µA 150 nC @ 10 V ±20V 5380 pF @ 50 V - 375W (Tc) -55°C ~ 175°C (TJ) Surface Mount
BUK7Y15-100EX

BUK7Y15-100EX

MOSFET N-CH 100V 68A LFPAK56

NXP USA Inc.
2,571 -

RFQ

BUK7Y15-100EX

Ficha técnica

Bulk TrenchMOS™ Active N-Channel MOSFET (Metal Oxide) 100 V 68A (Tc) 10V 15mOhm @ 20A, 10V 4V @ 1mA 54.5 nC @ 10 V ±20V 3958 pF @ 25 V - 195W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFR3710ZTRLPBF

IRFR3710ZTRLPBF

IRFR3710 - 12V-300V N-CHANNEL PO

International Rectifier
3,664 -

RFQ

IRFR3710ZTRLPBF

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 100 V 42A (Tc) 10V 18mOhm @ 33A, 10V 4V @ 250µA 100 nC @ 10 V ±20V 2930 pF @ 25 V - 140W (Tc) -55°C ~ 175°C (TJ) Surface Mount
FDS3692

FDS3692

POWER FIELD-EFFECT TRANSISTOR, 4

Fairchild Semiconductor
2,606 -

RFQ

FDS3692

Ficha técnica

Bulk PowerTrench® Active N-Channel MOSFET (Metal Oxide) 100 V 4.5A (Ta) 6V, 10V 60mOhm @ 4.5A, 10V 4V @ 250µA 15 nC @ 10 V ±20V 746 pF @ 25 V - 2.5W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IRFS7762TRLPBF

IRFS7762TRLPBF

MOSFET N-CH 75V 85A D2PAK

International Rectifier
2,040 -

RFQ

IRFS7762TRLPBF

Ficha técnica

Bulk HEXFET®, StrongIRFET™ Active N-Channel MOSFET (Metal Oxide) 75 V 85A (Tc) 6V, 10V 6.7mOhm @ 51A, 10V 3.7V @ 100µA 130 nC @ 10 V ±20V 4440 pF @ 25 V - 140W (Tc) -55°C ~ 175°C (TJ) Surface Mount
FDBL86563-F085

FDBL86563-F085

MOSFET N-CH 60V 240A 8HPSOF

Fairchild Semiconductor
2,380 -

RFQ

FDBL86563-F085

Ficha técnica

Bulk Automotive, AEC-Q101, PowerTrench® Active N-Channel MOSFET (Metal Oxide) 60 V 240A (Tc) 10V 1.5mOhm @ 80A, 10V 4V @ 250µA 169 nC @ 10 V ±20V 10300 pF @ 30 V - 357W (Tj) -55°C ~ 175°C (TJ) Surface Mount
FDS3580

FDS3580

SMALL SIGNAL FIELD-EFFECT TRANSI

Fairchild Semiconductor
3,780 -

RFQ

FDS3580

Ficha técnica

Bulk PowerTrench® Active N-Channel MOSFET (Metal Oxide) 80 V 7.6A (Ta) 6V, 10V 29mOhm @ 7.6A, 10V 4V @ 250µA 46 nC @ 10 V ±20V 1800 pF @ 25 V - 2.5W (Ta) -55°C ~ 150°C (TJ) Surface Mount
FQNL2N50BTA

FQNL2N50BTA

POWER FIELD-EFFECT TRANSISTOR, 0

Fairchild Semiconductor
3,761 -

RFQ

FQNL2N50BTA

Ficha técnica

Bulk QFET® Active N-Channel MOSFET (Metal Oxide) 500 V 350mA (Tc) 10V 5.3Ohm @ 175mA, 10V 3.7V @ 250µA 8 nC @ 10 V ±30V 230 pF @ 25 V - 1.5W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRF253

IRF253

MOSFET N-CH 150V 25A TO204AE

International Rectifier
3,466 -

RFQ

IRF253

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 150 V 25A - - - - - - - 150W - Through Hole
IRFS4321PBF

IRFS4321PBF

MOSFET N-CH 150V 85A D2PAK

International Rectifier
2,048 -

RFQ

IRFS4321PBF

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 150 V 85A (Tc) 10V 15mOhm @ 33A, 10V 5V @ 250µA 110 nC @ 10 V ±30V 4460 pF @ 25 V - 350W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPAN80R450P7XKSA1

IPAN80R450P7XKSA1

MOSFET N-CH 800V 11A TO220-3-31

Infineon Technologies
145 -

RFQ

IPAN80R450P7XKSA1

Ficha técnica

Tube CoolMOS™ P7 Active N-Channel MOSFET (Metal Oxide) 800 V 11A (Tc) 10V 450mOhm @ 4.5A, 10V 3.5V @ 220µA 24 nC @ 10 V ±20V 770 pF @ 500 V - 29W (Tc) -55°C ~ 150°C (TJ) Through Hole
STP141NF55

STP141NF55

MOSFET N-CH 55V 80A TO220AB

STMicroelectronics
2,190 -

RFQ

STP141NF55

Ficha técnica

Tube STripFET™ II Last Time Buy N-Channel MOSFET (Metal Oxide) 55 V 80A (Tc) 10V 8mOhm @ 40A, 10V 4V @ 250µA 142 nC @ 10 V ±20V 5300 pF @ 25 V - 300W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRFBF30PBF

IRFBF30PBF

MOSFET N-CH 900V 3.6A TO220AB

Vishay Siliconix
980 -

RFQ

IRFBF30PBF

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 900 V 3.6A (Tc) 10V 3.7Ohm @ 2.2A, 10V 4V @ 250µA 78 nC @ 10 V ±20V 1200 pF @ 25 V - 125W (Tc) -55°C ~ 150°C (TJ) Through Hole
FCP650N80Z

FCP650N80Z

MOSFET N-CH 800V 10A TO220

onsemi
574 -

RFQ

FCP650N80Z

Ficha técnica

Tube SuperFET® II Active N-Channel MOSFET (Metal Oxide) 800 V 10A (Tc) 10V 650mOhm @ 4A, 10V 4.5V @ 800µA 35 nC @ 10 V ±20V 1565 pF @ 100 V - 162W (Tc) -55°C ~ 150°C (TJ) Through Hole
FDP085N10A-F102

FDP085N10A-F102

MOSFET N-CH 100V 96A TO220-3

onsemi
2,200 -

RFQ

FDP085N10A-F102

Ficha técnica

Tube PowerTrench® Active N-Channel MOSFET (Metal Oxide) 100 V 96A (Tc) 10V 8.5mOhm @ 96A, 10V 4V @ 250µA 40 nC @ 10 V ±20V 2695 pF @ 50 V - 188W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPP80N03S4L03AKSA1

IPP80N03S4L03AKSA1

MOSFET N-CH 30V 80A TO220-3

Infineon Technologies
560 -

RFQ

IPP80N03S4L03AKSA1

Ficha técnica

Tube OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 30 V 80A (Tc) 4.5V, 10V 2.7mOhm @ 80A, 10V 2.2V @ 90µA 140 nC @ 10 V ±16V 9750 pF @ 25 V - 136W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRFI630GPBF

IRFI630GPBF

MOSFET N-CH 200V 5.9A TO220-3

Vishay Siliconix
580 -

RFQ

IRFI630GPBF

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 200 V 5.9A (Tc) 10V 400mOhm @ 3.5A, 10V 4V @ 250µA 43 nC @ 10 V ±20V 800 pF @ 25 V - 35W (Tc) -55°C ~ 150°C (TJ) Through Hole
R6006JNXC7G

R6006JNXC7G

MOSFET N-CH 600V 6A TO220FM

Rohm Semiconductor
894 -

RFQ

R6006JNXC7G

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 600 V 6A (Tc) 15V 936mOhm @ 3A, 15V 7V @ 800µA 15.5 nC @ 15 V ±30V 410 pF @ 100 V - 43W (Tc) 150°C (TJ) Through Hole
HUF75344P3

HUF75344P3

MOSFET N-CH 55V 75A TO220-3

onsemi
201 -

RFQ

HUF75344P3

Ficha técnica

Tube UltraFET™ Active N-Channel MOSFET (Metal Oxide) 55 V 75A (Tc) 10V 8mOhm @ 75A, 10V 4V @ 250µA 210 nC @ 20 V ±20V 3200 pF @ 25 V - 285W (Tc) -55°C ~ 175°C (TJ) Through Hole
FCP165N65S3

FCP165N65S3

MOSFET N-CH 650V 19A TO220-3

onsemi
736 -

RFQ

FCP165N65S3

Ficha técnica

Tube SuperFET® III Active N-Channel MOSFET (Metal Oxide) 650 V 19A (Tc) 10V 165mOhm @ 9.5A, 10V 4.5V @ 1.9mA 39 nC @ 10 V ±30V 1500 pF @ 400 V - 154W (Tc) -55°C ~ 150°C (TJ) Through Hole
1500+
1500+ Média diária de RFQ
20,000.000
20,000.000 Unidade padrão do produto
1800+
1800+ Fabricantes em todo o mundo
15,000+
15,000+ Armazém em estoque
Fudong Communication (Shenzhen) Grupo Co., Ltd.

Início

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Produto

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Telefone

Fudong Communication (Shenzhen) Grupo Co., Ltd.

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