Transistores - FETs, MOSFETs - Único

Foto: Número da peça do fabricante Disponibilidade Preço Quantidade Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IRF3205STRLPBF

IRF3205STRLPBF

IRF3205 - 12V-300V N-CHANNEL POW

International Rectifier
3,840 -

RFQ

IRF3205STRLPBF

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 55 V 110A (Tc) 10V 8mOhm @ 62A, 10V 4V @ 250µA 146 nC @ 10 V ±20V 3247 pF @ 25 V - 200W (Tc) -55°C ~ 175°C (TJ) Surface Mount
FDB016N04AL7

FDB016N04AL7

POWER FIELD-EFFECT TRANSISTOR, 1

Fairchild Semiconductor
3,056 -

RFQ

FDB016N04AL7

Ficha técnica

Bulk PowerTrench® Active N-Channel MOSFET (Metal Oxide) 40 V 160A (Tc) 10V 1.6mOhm @ 80A, 10V 3V @ 250µA 167 nC @ 10 V ±20V 11600 pF @ 25 V - 283W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRLB4132PBF

IRLB4132PBF

IRLB4132 - 12V-300V N-CHANNEL PO

International Rectifier
3,761 -

RFQ

IRLB4132PBF

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 30 V 78A (Tc) 4.5V, 10V 3.5mOhm @ 40A, 10V 2.35V @ 100µA 54 nC @ 4.5 V ±20V 5110 pF @ 15 V - 140W (Tc) -55°C ~ 175°C (TJ) Through Hole
AUIRF2903ZS

AUIRF2903ZS

MOSFET N-CH 30V 160A D2PAK

International Rectifier
3,636 -

RFQ

AUIRF2903ZS

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 30 V 160A (Tc) 10V 2.4mOhm @ 75A, 10V 4V @ 150µA 240 nC @ 10 V ±20V 6320 pF @ 25 V - 231W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFBA1405PPBF

IRFBA1405PPBF

MOSFET N-CH 55V 174A SUPER-220

International Rectifier
2,897 -

RFQ

IRFBA1405PPBF

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 55 V 174A (Tc) 10V 5mOhm @ 101A, 10V 4V @ 250µA 260 nC @ 10 V ±20V 5480 pF @ 25 V - 330W (Tc) -40°C ~ 175°C (TJ) Through Hole
IRFH5053TRPBF

IRFH5053TRPBF

IRFH5053 - 12V-300V N-CHANNEL PO

International Rectifier
3,577 -

RFQ

IRFH5053TRPBF

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 100 V 9.3A (Ta), 46A (Tc) 10V 18mOhm @ 9.3A, 10V 4.9V @ 100µA 36 nC @ 10 V ±20V 1510 pF @ 50 V - 3.1W (Ta), 8.3W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRF7607TRPBF

IRF7607TRPBF

IRF7607 - 12V-300V N-CHANNEL POW

International Rectifier
3,196 -

RFQ

IRF7607TRPBF

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 20 V 6.5A (Ta) 2.5V, 4.5V 30mOhm @ 6.5A, 4.5V 1.2V @ 250µA 22 nC @ 5 V ±12V 1310 pF @ 15 V - 1.8W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IRF7809AVTRPBF-1

IRF7809AVTRPBF-1

MOSFET N-CH 30V 13.3A 8SO

International Rectifier
3,248 -

RFQ

IRF7809AVTRPBF-1

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 30 V 13.3A (Ta) 4.5V 9mOhm @ 15A, 4.5V 1V @ 250µA 62 nC @ 5 V ±12V 3780 pF @ 16 V - 2.5W (Ta) -55°C ~ 150°C (TJ) Surface Mount
FDPF035N06B_F152

FDPF035N06B_F152

MOSFET N-CH 60V 88A TO220F-3

Fairchild Semiconductor
2,650 -

RFQ

FDPF035N06B_F152

Ficha técnica

Bulk PowerTrench® Active N-Channel MOSFET (Metal Oxide) 60 V 88A (Tc) - 3.5mOhm @ 88A, 10V 4V @ 250µA 99 nC @ 10 V ±20V 8030 pF @ 30 V - 46.3W (Tc) -55°C ~ 175°C (TJ) Through Hole
AUIRFS6535

AUIRFS6535

MOSFET N-CH 300V 19A D2PAK

International Rectifier
3,506 -

RFQ

AUIRFS6535

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 300 V 19A (Tc) 10V 185mOhm @ 11A, 10V 5V @ 150µA 57 nC @ 10 V ±20V 2340 pF @ 25 V - 210W (Tc) -55°C ~ 175°C (TJ) Surface Mount
BBS3002-DL-E

BBS3002-DL-E

MOSFET P-CH 60V 100A SMP-FD

Sanyo
3,580 -

RFQ

Bulk - Obsolete P-Channel MOSFET (Metal Oxide) 60 V 100A (Ta) 4V, 10V 5.8mOhm @ 50A, 10V - 280 nC @ 10 V ±20V 13200 pF @ 20 V - 90W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SI4435DY

SI4435DY

MOSFET P-CH 30V 8A 8SO

Fairchild Semiconductor
3,384 -

RFQ

SI4435DY

Ficha técnica

Bulk HEXFET® Obsolete P-Channel MOSFET (Metal Oxide) 30 V 8A (Tc) 4.5V, 10V 20mOhm @ 8A, 10V 1V @ 250µA 60 nC @ 10 V ±20V 2320 pF @ 15 V - 2.5W (Ta) -55°C ~ 150°C (TJ) Surface Mount
2V7002LT1G

2V7002LT1G

SMALL SIGNAL FIELD-EFFECT TRANSI

onsemi
2,177 -

RFQ

2V7002LT1G

Ficha técnica

Bulk Automotive, AEC-Q101 Active N-Channel MOSFET (Metal Oxide) 60 V 115mA (Tc) 5V, 10V 7.5Ohm @ 500mA, 10V 2.5V @ 250µA - ±20V 50 pF @ 25 V - 225mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
SP000685844

SP000685844

IPP60R125C6XKSA1 - COOLMOS N-CHA

Infineon Technologies
2,735 -

RFQ

SP000685844

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
IRFR3410TRPBF

IRFR3410TRPBF

IRFR3410 - 12V-300V N-CHANNEL PO

International Rectifier
3,144 -

RFQ

IRFR3410TRPBF

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 100 V 31A (Tc) 10V 39mOhm @ 18A, 10V 4V @ 250µA 56 nC @ 10 V ±20V 1690 pF @ 25 V - 3W (Ta), 110W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFS3006TRL7PP

IRFS3006TRL7PP

IRFS3006 - 12V-300V N-CHANNEL PO

International Rectifier
3,516 -

RFQ

IRFS3006TRL7PP

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 60 V 240A (Tc) 10V 2.1mOhm @ 168A, 10V 4V @ 250µA 300 nC @ 10 V ±20V 8850 pF @ 50 V - 375W (Tc) -55°C ~ 175°C (TJ) Surface Mount
FQA65N20

FQA65N20

POWER FIELD-EFFECT TRANSISTOR, 6

Fairchild Semiconductor
2,148 -

RFQ

FQA65N20

Ficha técnica

Bulk QFET® Active N-Channel MOSFET (Metal Oxide) 200 V 65A (Tc) 10V 32mOhm @ 32.5A, 10V 5V @ 250µA 200 nC @ 10 V ±30V 7900 pF @ 25 V - 310W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFSL7530PBF

IRFSL7530PBF

MOSFET N-CH 60V 195A TO262

International Rectifier
2,191 -

RFQ

IRFSL7530PBF

Ficha técnica

Bulk HEXFET®, StrongIRFET™ Active N-Channel MOSFET (Metal Oxide) 60 V 195A (Tc) 6V, 10V 2mOhm @ 100A, 10V 3.7V @ 250µA 411 nC @ 10 V ±20V 13703 pF @ 25 V - 375W (Tc) -55°C ~ 175°C (TJ) Surface Mount
FQB4N80TM

FQB4N80TM

POWER FIELD-EFFECT TRANSISTOR, 3

Fairchild Semiconductor
2,512 -

RFQ

FQB4N80TM

Ficha técnica

Bulk QFET® Active N-Channel MOSFET (Metal Oxide) 800 V 3.9A (Tc) 10V 3.6Ohm @ 1.95A, 10V 5V @ 250µA 25 nC @ 10 V ±30V 880 pF @ 25 V - 3.13W (Ta), 130W (Tc) -55°C ~ 150°C (TJ) Surface Mount
FDS6699S

FDS6699S

SMALL SIGNAL FIELD-EFFECT TRANSI

Fairchild Semiconductor
3,988 -

RFQ

FDS6699S

Ficha técnica

Bulk PowerTrench®, SyncFET™ Active N-Channel MOSFET (Metal Oxide) 30 V 21A (Ta) 4.5V, 10V 3.6mOhm @ 21A, 10V 3V @ 1mA 91 nC @ 10 V ±20V 3610 pF @ 15 V - 2.5W (Ta) -55°C ~ 150°C (TJ) Surface Mount
1500+
1500+ Média diária de RFQ
20,000.000
20,000.000 Unidade padrão do produto
1800+
1800+ Fabricantes em todo o mundo
15,000+
15,000+ Armazém em estoque
Fudong Communication (Shenzhen) Grupo Co., Ltd.

Início

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Produto

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Telefone

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Usuário