Transistores - FETs, MOSFETs - Único

Foto: Número da peça do fabricante Disponibilidade Preço Quantidade Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
PSMN3R9-60PSQ

PSMN3R9-60PSQ

MOSFET N-CH 60V 130A TO220AB

Nexperia USA Inc.
3,323 -

RFQ

PSMN3R9-60PSQ

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 60 V 130A (Tc) 10V 3.9mOhm @ 25A, 10V 4V @ 1mA 103 nC @ 10 V ±20V 5600 pF @ 25 V - 263W (Tc) -55°C ~ 175°C (TJ) Through Hole
IXTA1R6N50D2

IXTA1R6N50D2

MOSFET N-CH 500V 1.6A TO263

IXYS
2,486 -

RFQ

IXTA1R6N50D2

Ficha técnica

Tube Depletion Active N-Channel MOSFET (Metal Oxide) 500 V 1.6A (Tc) 10V 2.3Ohm @ 800mA, 0V - 23.7 nC @ 5 V ±20V 645 pF @ 25 V Depletion Mode 100W (Tc) -55°C ~ 150°C (TJ) Surface Mount
RCX450N20

RCX450N20

MOSFET N-CH 200V 45A TO220FM

Rohm Semiconductor
157 -

RFQ

RCX450N20

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 200 V 45A (Tc) 10V 55mOhm @ 22.5A, 10V 5V @ 1mA 80 nC @ 10 V ±30V 4200 pF @ 25 V - 2.23W (Ta), 40W (Tc) 150°C (TJ) Through Hole
IRFB9N60APBF

IRFB9N60APBF

MOSFET N-CH 600V 9.2A TO220AB

Vishay Siliconix
990 -

RFQ

IRFB9N60APBF

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 600 V 9.2A (Tc) 10V 750mOhm @ 5.5A, 10V 4V @ 250µA 49 nC @ 10 V ±30V 1400 pF @ 25 V - 170W (Tc) -55°C ~ 150°C (TJ) Through Hole
STFH24N60M2

STFH24N60M2

MOSFET N-CH 600V 18A TO220FP

STMicroelectronics
920 -

RFQ

STFH24N60M2

Ficha técnica

Tube MDmesh™ Active N-Channel MOSFET (Metal Oxide) 600 V 18A (Tc) 10V 190mOhm @ 9A, 10V 4V @ 250µA 29 nC @ 10 V ±25V 1060 pF @ 100 V - 35W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFI9634GPBF

IRFI9634GPBF

MOSFET P-CH 250V 4.1A TO220-3

Vishay Siliconix
2,014 -

RFQ

IRFI9634GPBF

Ficha técnica

Tube - Active P-Channel MOSFET (Metal Oxide) 250 V 4.1A (Tc) 10V 1Ohm @ 2.5A, 10V 4V @ 250µA 38 nC @ 10 V ±20V 680 pF @ 25 V - 35W (Tc) -55°C ~ 150°C (TJ) Through Hole
PSMN3R3-60PLQ

PSMN3R3-60PLQ

MOSFET N-CH 60V 130A TO220AB

Nexperia USA Inc.
3,935 -

RFQ

PSMN3R3-60PLQ

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 60 V 130A (Tc) 4.5V, 10V 3.4mOhm @ 25A, 10V 2.1V @ 1mA 95 nC @ 5 V ±20V 10115 pF @ 25 V - 293W (Tc) -55°C ~ 175°C (TJ) Through Hole
AOTF160A60L

AOTF160A60L

MOSFET N-CH 600V 24A TO220F

Alpha & Omega Semiconductor Inc.
243 -

RFQ

AOTF160A60L

Ficha técnica

Tube aMOS5™ Active N-Channel MOSFET (Metal Oxide) 600 V 24A (Tj) 10V 160mOhm @ 12A, 10V 3.6V @ 250µA 46 nC @ 10 V ±20V 2340 pF @ 100 V - 34.7W (Tc) -55°C ~ 150°C (TJ) Through Hole
STF16N65M5

STF16N65M5

MOSFET N-CH 650V 12A TO220FP

STMicroelectronics
1,048 -

RFQ

STF16N65M5

Ficha técnica

Tube MDmesh™ V Active N-Channel MOSFET (Metal Oxide) 650 V 12A (Tc) 10V 299mOhm @ 6A, 10V 5V @ 250µA 45 nC @ 10 V ±25V 1250 pF @ 100 V - 25W (Tc) 150°C (TJ) Through Hole
R6020ENX

R6020ENX

MOSFET N-CH 600V 20A TO220FM

Rohm Semiconductor
3,583 -

RFQ

R6020ENX

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 600 V 20A (Tc) 10V 196mOhm @ 10A, 10V 4V @ 1mA 60 nC @ 10 V ±20V 1400 pF @ 25 V - 50W (Tc) 150°C (TJ) Through Hole
RCX330N25

RCX330N25

MOSFET N-CH 250V 33A TO220FM

Rohm Semiconductor
2,808 -

RFQ

RCX330N25

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 250 V 33A (Ta) 10V - - - ±30V - - 2.23W (Ta), 40W (Tc) 150°C (TJ) Through Hole
TK100E08N1,S1X

TK100E08N1,S1X

MOSFET N-CH 80V 100A TO220

Toshiba Semiconductor and Storage
2,998 -

RFQ

TK100E08N1,S1X

Ficha técnica

Tube U-MOSVIII-H Active N-Channel MOSFET (Metal Oxide) 80 V 100A (Ta) 10V 3.2mOhm @ 50A, 10V 4V @ 1mA 130 nC @ 10 V ±20V 9000 pF @ 40 V - 255W (Tc) 150°C (TJ) Through Hole
SIHG25N40D-E3

SIHG25N40D-E3

MOSFET N-CH 400V 25A TO247AC

Vishay Siliconix
2,877 -

RFQ

SIHG25N40D-E3

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 400 V 25A (Tc) 10V 170mOhm @ 13A, 10V 5V @ 250µA 88 nC @ 10 V ±30V 1707 pF @ 100 V - 278W (Tc) -55°C ~ 150°C (TJ) Through Hole
FDP023N08B-F102

FDP023N08B-F102

MOSFET N-CH 75V 120A TO220-3

onsemi
2,769 -

RFQ

FDP023N08B-F102

Ficha técnica

Tube,Tube PowerTrench® Active N-Channel MOSFET (Metal Oxide) 75 V 120A (Tc) 10V 2.35mOhm @ 75A, 10V 3.8V @ 250µA 195 nC @ 10 V ±20V 13765 pF @ 37.5 V - 245W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPP65R190C7FKSA1

IPP65R190C7FKSA1

MOSFET N-CH 650V 13A TO220-3

Infineon Technologies
3,918 -

RFQ

IPP65R190C7FKSA1

Ficha técnica

Tube CoolMOS™ C7 Active N-Channel MOSFET (Metal Oxide) 650 V 13A (Tc) 10V 190mOhm @ 5.7A, 10V 4V @ 290µA 23 nC @ 10 V ±20V 1150 pF @ 400 V - 72W (Tc) -55°C ~ 150°C (TJ) Through Hole
R6030KNX

R6030KNX

MOSFET N-CH 600V 30A TO220FM

Rohm Semiconductor
144 -

RFQ

R6030KNX

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 600 V 30A (Tc) 10V 130mOhm @ 14.5A, 10V 5V @ 1mA 56 nC @ 10 V ±20V 2350 pF @ 25 V - 86W (Tc) -55°C ~ 150°C (TJ) Through Hole
STP28N60DM2

STP28N60DM2

MOSFET N-CH 600V 21A TO220

STMicroelectronics
2,990 -

RFQ

STP28N60DM2

Ficha técnica

Tube MDmesh™ DM2 Active N-Channel MOSFET (Metal Oxide) 600 V 21A (Tc) 10V 160mOhm @ 10.5A, 10V 5V @ 250µA 34 nC @ 10 V ±25V 1500 pF @ 100 V - 170W (Tc) -55°C ~ 150°C (TJ) Through Hole
AOTF190A60L

AOTF190A60L

MOSFET N-CH 600V 20A TO220F

Alpha & Omega Semiconductor Inc.
101 -

RFQ

AOTF190A60L

Ficha técnica

Tube aMOS5™ Active N-Channel MOSFET (Metal Oxide) 600 V 20A (Tc) 10V 190mOhm @ 7.6A, 10V 4.6V @ 250µA 34 nC @ 10 V ±20V 1935 pF @ 100 V Standard 32W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPAN80R280P7XKSA1

IPAN80R280P7XKSA1

MOSFET N-CH 800V 17A TO220

Infineon Technologies
2,562 -

RFQ

IPAN80R280P7XKSA1

Ficha técnica

Tube CoolMOS™ P7 Active N-Channel MOSFET (Metal Oxide) 800 V 17A (Tc) 10V 280mOhm @ 7.2A, 10V 3.5V @ 360µA 36 nC @ 10 V ±20V 1200 pF @ 500 V - 30W (Tc) -55°C ~ 150°C (TJ) Through Hole
STW28N65M2

STW28N65M2

MOSFET N-CH 650V 20A TO247

STMicroelectronics
2,308 -

RFQ

STW28N65M2

Ficha técnica

Tube MDmesh™ M2 Active N-Channel MOSFET (Metal Oxide) 650 V 20A (Tc) 10V 180mOhm @ 10A, 10V 4V @ 250µA 35 nC @ 10 V ±25V 1440 pF @ 100 V - 170W (Tc) 150°C (TJ) Through Hole
1500+
1500+ Média diária de RFQ
20,000.000
20,000.000 Unidade padrão do produto
1800+
1800+ Fabricantes em todo o mundo
15,000+
15,000+ Armazém em estoque
Fudong Communication (Shenzhen) Grupo Co., Ltd.

Início

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Produto

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Telefone

Fudong Communication (Shenzhen) Grupo Co., Ltd.

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