Transistores - FETs, MOSFETs - Único

Foto: Número da peça do fabricante Disponibilidade Preço Quantidade Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
AUIRFSL4010-313TRL

AUIRFSL4010-313TRL

MOSFET N-CH 100V 180A TO262

International Rectifier
2,074 -

RFQ

AUIRFSL4010-313TRL

Ficha técnica

Bulk Automotive, AEC-Q101, HEXFET® Active N-Channel MOSFET (Metal Oxide) 100 V 180A (Tc) 10V 4.7mOhm @ 106A, 10V 4V @ 250µA 215 nC @ 10 V ±8V 9575 pF @ 50 V - 375W (Tc) -55°C ~ 175°C (TJ) Through Hole
AUIRFS8409-7P

AUIRFS8409-7P

AUIRFS8409 - 20V-40V N-CHANNEL A

International Rectifier
2,206 -

RFQ

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 40 V 240A (Tc) 10V 0.75mOhm @ 100A, 10V 3.9V @ 250µA 460 nC @ 10 V ±20V 13975 pF @ 25 V - 375W (Tc) -55°C ~ 175°C (TJ) Surface Mount
AUIRFSL8405

AUIRFSL8405

MOSFET N-CH 40V 120A TO262

International Rectifier
2,806 -

RFQ

AUIRFSL8405

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 40 V 120A (Tc) 10V 2.3mOhm @ 100A, 10V 3.9V @ 100µA 161 nC @ 10 V ±20V 5193 pF @ 25 V - 163W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPA60R160P6

IPA60R160P6

POWER FIELD-EFFECT TRANSISTOR

Infineon Technologies
3,411 -

RFQ

IPA60R160P6

Ficha técnica

Bulk CoolMOS™ Active N-Channel MOSFET (Metal Oxide) 600 V 23.8A (Tc) 10V 160mOhm @ 9A, 10V 4.5V @ 750µA 44 nC @ 10 V ±20V 2080 pF @ 100 V - 34W (Tc) -55°C ~ 150°C (TJ) Through Hole
AUIRLR2908

AUIRLR2908

MOSFET N-CH 80V 30A DPAK

International Rectifier
2,637 -

RFQ

AUIRLR2908

Ficha técnica

Bulk HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 80 V 30A (Tc) 4.5V, 10V 28mOhm @ 23A, 10V 2.5V @ 250µA 33 nC @ 4.5 V ±16V 1890 pF @ 25 V - 120W (Tc) -55°C ~ 175°C (TJ) Surface Mount
BUK7607-55B,118

BUK7607-55B,118

NOW NEXPERIA BUK7607-55B - 119A

NXP USA Inc.
2,951 -

RFQ

Bulk Automotive, AEC-Q101, TrenchMOS™ Active N-Channel MOSFET (Metal Oxide) 55 V 75A (Tc) 10V 7.1mOhm @ 25A, 10V 4V @ 1mA 53 nC @ 10 V ±20V 3760 pF @ 25 V - 203W (Tc) -55°C ~ 175°C (TJ)
FQP8P10

FQP8P10

POWER FIELD-EFFECT TRANSISTOR, 8

Fairchild Semiconductor
2,844 -

RFQ

FQP8P10

Ficha técnica

Bulk QFET® Active P-Channel MOSFET (Metal Oxide) 100 V 8A (Tc) 10V 530mOhm @ 4A, 10V 4V @ 250µA 15 nC @ 10 V ±30V 470 pF @ 25 V - 65W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPA90R800C3

IPA90R800C3

MOSFET N-CH 900V 6.9A TO220

Infineon Technologies
3,367 -

RFQ

IPA90R800C3

Ficha técnica

Bulk CoolMOS™ Active N-Channel MOSFET (Metal Oxide) 900 V 6.9A (Tc) - 800mOhm @ 4.1A, 10V 3.5V @ 460µA 42 nC @ 10 V ±20V 1100 pF @ 100 V - 33W (Tc) -55°C ~ 150°C (TJ) Through Hole
BUK7613-75B,118

BUK7613-75B,118

MOSFET N-CH 75V 75A D2PAK

NXP USA Inc.
2,306 -

RFQ

BUK7613-75B,118

Ficha técnica

Bulk Automotive, AEC-Q101, TrenchMOS™ Active N-Channel MOSFET (Metal Oxide) 75 V 75A (Tc) 10V 13mOhm @ 25A, 10V 4V @ 1mA 40 nC @ 10 V ±20V 2644 pF @ 25 V - 157W (Tc) -55°C ~ 175°C (TJ) Surface Mount
BUK762R4-60E,118

BUK762R4-60E,118

MOSFET N-CH 60V 120A D2PAK

NXP USA Inc.
3,426 -

RFQ

BUK762R4-60E,118

Ficha técnica

Bulk Automotive, AEC-Q101, TrenchMOS™ Active N-Channel MOSFET (Metal Oxide) 60 V 120A (Tc) 10V 2.4mOhm @ 25A, 10V 4V @ 1mA 158 nC @ 10 V ±20V 11180 pF @ 25 V - 357W (Tc) -55°C ~ 175°C (TJ) Surface Mount
FDMS0309AS

FDMS0309AS

POWER FIELD-EFFECT TRANSISTOR, 2

Fairchild Semiconductor
2,213 -

RFQ

FDMS0309AS

Ficha técnica

Bulk PowerTrench®, SyncFET™ Active N-Channel MOSFET (Metal Oxide) 30 V 21A (Ta), 49A (Tc) 4.5V, 10V 3.5mOhm @ 21A, 10V 3V @ 1mA 47 nC @ 10 V ±20V 3000 pF @ 15 V - 2.5W (Ta), 50W (Tc) -55°C ~ 150°C (TJ) Surface Mount
FDU3N40TU

FDU3N40TU

POWER FIELD-EFFECT TRANSISTOR, 2

Fairchild Semiconductor
2,786 -

RFQ

FDU3N40TU

Ficha técnica

Bulk UniFET™ Active N-Channel MOSFET (Metal Oxide) 400 V 2A (Tc) 10V 3.4Ohm @ 1A, 10V 5V @ 250µA 6 nC @ 10 V ±30V 225 pF @ 25 V - 30W (Tc) -55°C ~ 150°C (TJ) Through Hole
FDB3672-F085

FDB3672-F085

MOSFET N-CH 100V 7.2A/44A TO263

Fairchild Semiconductor
3,290 -

RFQ

FDB3672-F085

Ficha técnica

Bulk Automotive, AEC-Q101, PowerTrench® Active N-Channel MOSFET (Metal Oxide) 100 V 7.2A (Ta), 44A (Tc) 6V, 10V 28mOhm @ 44A, 10V 4V @ 250µA 31 nC @ 10 V ±20V 1710 pF @ 25 V - 120W (Tc) -55°C ~ 175°C (TJ) Surface Mount
BSC019N04NSG

BSC019N04NSG

BSC019N04 - 12V-300V N-CHANNEL P

Infineon Technologies
2,092 -

RFQ

Bulk * Active - - - - - - - - - - - - - -
FDMS8020

FDMS8020

MOSFET N-CH 30V 26A/42A 8PQFN

Fairchild Semiconductor
2,592 -

RFQ

FDMS8020

Ficha técnica

Bulk PowerTrench® Active N-Channel MOSFET (Metal Oxide) 30 V 26A (Ta), 42A (Tc) 4.5V, 10V 2.5mOhm @ 26A, 10V 3V @ 250µA 61 nC @ 10 V ±20V 3800 pF @ 15 V - 2.5W (Ta), 65W (Tc) -55°C ~ 150°C (TJ) Surface Mount
BSC050N03LSGXT

BSC050N03LSGXT

BSC050N03 - 12V-300V N-CHANNEL P

Infineon Technologies
2,683 -

RFQ

BSC050N03LSGXT

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
AUIRF1010EZSTRL

AUIRF1010EZSTRL

MOSFET N-CH 60V 75A D2PAK

International Rectifier
3,639 -

RFQ

AUIRF1010EZSTRL

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 60 V 75A (Tc) 10V 8.5mOhm @ 51A, 10V 4V @ 250µA 86 nC @ 10 V ±20V 2810 pF @ 25 V - 140W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRF7749L1TRPBF

IRF7749L1TRPBF

IRF7749 - 12V-300V N-CHANNEL POW

International Rectifier
2,147 -

RFQ

IRF7749L1TRPBF

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 60 V 33A (Ta), 200A (Tc) 10V 1.5mOhm @ 120A, 10V 4V @ 250µA 300 nC @ 10 V ±20V 12320 pF @ 25 V - 3.3W (Ta), 125W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRF7807VTRPBF

IRF7807VTRPBF

PLANAR <=40V

International Rectifier
3,816 -

RFQ

IRF7807VTRPBF

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 30 V 8.3A (Ta) 4.5V 25mOhm @ 7A, 4.5V 3V @ 250µA 14 nC @ 5 V ±20V - - 2.5W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IPW65R190C7

IPW65R190C7

IPW65R190 - 650V AND 700V COOLMO

Infineon Technologies
2,639 -

RFQ

IPW65R190C7

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
1500+
1500+ Média diária de RFQ
20,000.000
20,000.000 Unidade padrão do produto
1800+
1800+ Fabricantes em todo o mundo
15,000+
15,000+ Armazém em estoque
Fudong Communication (Shenzhen) Grupo Co., Ltd.

Início

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Produto

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Telefone

Fudong Communication (Shenzhen) Grupo Co., Ltd.

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