Transistores - FETs, MOSFETs - Único

Foto: Número da peça do fabricante Disponibilidade Preço Quantidade Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
PSMN2R6-60PSQ127

PSMN2R6-60PSQ127

MOSFET N-CH 60V 150A TO220AB

NXP USA Inc.
3,960 -

RFQ

PSMN2R6-60PSQ127

Ficha técnica

Bulk TrenchMOS™ Active N-Channel MOSFET (Metal Oxide) 60 V 150A (Ta) - 2.6mOhm @ 25A, 10V 4V @ 1mA 140 nC @ 10 V ±20V 7629 pF @ 25 V - 326W (Ta) -55°C ~ 175°C (TJ) Through Hole
FDN306P

FDN306P

SMALL SIGNAL FIELD-EFFECT TRANSI

Fairchild Semiconductor
2,783 -

RFQ

FDN306P

Ficha técnica

Bulk PowerTrench® Active P-Channel MOSFET (Metal Oxide) 12 V 2.6A (Ta) 1.8V, 4.5V 40mOhm @ 2.6A, 4.5V 1.5V @ 250µA 17 nC @ 4.5 V ±8V 1138 pF @ 6 V - 500mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
TK39J60W5,S1VQ

TK39J60W5,S1VQ

MOSFET N-CH 600V 38.8A TO3P

Toshiba Semiconductor and Storage
2,908 -

RFQ

TK39J60W5,S1VQ

Ficha técnica

Tube DTMOSIV Active N-Channel MOSFET (Metal Oxide) 600 V 38.8A (Ta) 10V 65mOhm @ 19.4A, 10V 3.7V @ 1.9mA 135 nC @ 10 V ±30V 4100 pF @ 300 V Super Junction 270W (Tc) 150°C (TJ) Through Hole
IXTQ120N20P

IXTQ120N20P

MOSFET N-CH 200V 120A TO3P

IXYS
2,350 -

RFQ

IXTQ120N20P

Ficha técnica

Tube Polar Active N-Channel MOSFET (Metal Oxide) 200 V 120A (Tc) 10V 22mOhm @ 500mA, 10V 5V @ 250µA 152 nC @ 10 V ±20V 6000 pF @ 25 V - 714W (Tc) -55°C ~ 175°C (TJ) Through Hole
SUP70090E-GE3

SUP70090E-GE3

MOSFET N-CH 100V 50A TO220AB

Vishay Siliconix
2,638 -

RFQ

SUP70090E-GE3

Ficha técnica

Bulk ThunderFET® Active N-Channel MOSFET (Metal Oxide) 100 V 50A (Tc) 7.5V, 10V 8.9mOhm @ 20A, 10V 4V @ 250µA 50 nC @ 10 V ±20V 1950 pF @ 50 V - 125W (Tc) -55°C ~ 175°C (TJ) Through Hole
IXTQ36N50P

IXTQ36N50P

MOSFET N-CH 500V 36A TO3P

IXYS
2,763 -

RFQ

IXTQ36N50P

Ficha técnica

Tube Polar Active N-Channel MOSFET (Metal Oxide) 500 V 36A (Tc) 10V 170mOhm @ 500mA, 10V 5V @ 250µA 85 nC @ 10 V ±30V 5500 pF @ 25 V - 540W (Tc) -55°C ~ 150°C (TJ) Through Hole
SIHG039N60EF-GE3

SIHG039N60EF-GE3

MOSFET N-CH 600V 61A TO247AC

Vishay Siliconix
3,251 -

RFQ

SIHG039N60EF-GE3

Ficha técnica

Tube EF Active N-Channel MOSFET (Metal Oxide) 600 V 61A (Tc) 10V 40mOhm @ 32A, 10V 5V @ 250µA 126 nC @ 10 V ±30V 4323 pF @ 100 V - 357W (Tc) -55°C ~ 150°C (TJ) Through Hole
APT56F50B2

APT56F50B2

MOSFET N-CH 500V 56A T-MAX

Microchip Technology
2,436 -

RFQ

APT56F50B2

Ficha técnica

Tube POWER MOS 8™ Active N-Channel MOSFET (Metal Oxide) 500 V 56A (Tc) 10V 100mOhm @ 28A, 10V 5V @ 2.5mA 220 nC @ 10 V ±30V 8800 pF @ 25 V - 780W (Tc) -55°C ~ 150°C (TJ) Through Hole
APT47N60BC3G

APT47N60BC3G

MOSFET N-CH 600V 47A TO247

Microchip Technology
3,603 -

RFQ

APT47N60BC3G

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 600 V 47A (Tc) 10V 70mOhm @ 30A, 10V 3.9V @ 2.7mA 260 nC @ 10 V ±20V 7015 pF @ 25 V - 417W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXFR36N60P

IXFR36N60P

MOSFET N-CH 600V 20A ISOPLUS247

IXYS
3,401 -

RFQ

IXFR36N60P

Ficha técnica

Tube HiPerFET™, Polar Active N-Channel MOSFET (Metal Oxide) 600 V 20A (Tc) 10V 200mOhm @ 18A, 10V 5V @ 4mA 102 nC @ 10 V ±30V 5800 pF @ 25 V - 208W (Tc) -55°C ~ 150°C (TJ) Through Hole
APT47N60SC3G

APT47N60SC3G

MOSFET N-CH 600V 47A D3PAK

Microchip Technology
2,953 -

RFQ

APT47N60SC3G

Ficha técnica

Tube CoolMOS™ Active N-Channel MOSFET (Metal Oxide) 600 V 47A (Tc) 10V 70mOhm @ 30A, 10V 3.9V @ 2.7mA 260 nC @ 10 V ±20V 7015 pF @ 25 V - 417W (Tc) -55°C ~ 150°C (TJ) Surface Mount
TK62N60W,S1VF

TK62N60W,S1VF

MOSFET N-CH 600V 61.8A TO247

Toshiba Semiconductor and Storage
3,388 -

RFQ

TK62N60W,S1VF

Ficha técnica

Tube DTMOSIV Active N-Channel MOSFET (Metal Oxide) 600 V 61.8A (Ta) 10V 40mOhm @ 30.9A, 10V 3.7V @ 3.1mA 180 nC @ 10 V ±30V 6500 pF @ 300 V Super Junction 400W (Tc) 150°C (TJ) Through Hole
IXFH24N90P

IXFH24N90P

MOSFET N-CH 900V 24A TO247AD

IXYS
3,746 -

RFQ

IXFH24N90P

Ficha técnica

Tube HiPerFET™, Polar Active N-Channel MOSFET (Metal Oxide) 900 V 24A (Tc) 10V 420mOhm @ 12A, 10V 6.5V @ 1mA 130 nC @ 10 V ±30V 7200 pF @ 25 V - 660W (Tc) -55°C ~ 150°C (TJ) Through Hole
MSC035SMA070S

MSC035SMA070S

MOSFET N-CH 700V D3PAK

Microchip Technology
2,582 -

RFQ

MSC035SMA070S

Ficha técnica

Tube - Active N-Channel SiCFET (Silicon Carbide) 700 V 65A (Tc) 20V 44mOhm @ 30A, 20V 2.7V @ 1mA 99 nC @ 20 V +23V, -10V 2010 pF @ 700 V - 206W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IXFX98N50P3

IXFX98N50P3

MOSFET N-CH 500V 98A PLUS247-3

IXYS
2,817 -

RFQ

IXFX98N50P3

Ficha técnica

Tube HiPerFET™, Polar3™ Active N-Channel MOSFET (Metal Oxide) 500 V 98A (Tc) 10V 50mOhm @ 500mA, 10V 5V @ 8mA 197 nC @ 10 V ±30V 13100 pF @ 25 V - 1300W (Tc) -55°C ~ 150°C (TJ) Through Hole
APT38F80L

APT38F80L

MOSFET N-CH 800V 41A TO264

Microchip Technology
3,778 -

RFQ

APT38F80L

Ficha técnica

Tube POWER MOS 8™ Active N-Channel MOSFET (Metal Oxide) 800 V 41A (Tc) 10V 240mOhm @ 20A, 10V 5V @ 2.5mA 260 nC @ 10 V ±30V 8070 pF @ 25 V - 1040W (Tc) -55°C ~ 150°C (TJ) Through Hole
STP270N8F7

STP270N8F7

MOSFET N CH 80V 180A TO220

STMicroelectronics
3,771 -

RFQ

STP270N8F7

Ficha técnica

Tube DeepGATE™, STripFET™ VII Active N-Channel MOSFET (Metal Oxide) 80 V 180A (Tc) 10V 2.5mOhm @ 90A, 10V 4V @ 250µA 193 nC @ 10 V ±20V 13600 pF @ 50 V - 315W (Tc) -55°C ~ 175°C (TJ) Through Hole
APT106N60LC6

APT106N60LC6

MOSFET N-CH 600V 106A TO264

Microchip Technology
3,453 -

RFQ

APT106N60LC6

Ficha técnica

Tube CoolMOS™ Active N-Channel MOSFET (Metal Oxide) 600 V 106A (Tc) 10V 35mOhm @ 53A, 10V 3.5V @ 3.4mA 308 nC @ 10 V ±20V 8390 pF @ 25 V - 833W (Tc) -55°C ~ 150°C (TJ) Through Hole
APT48M80L

APT48M80L

MOSFET N-CH 800V 49A TO264

Microchip Technology
3,987 -

RFQ

APT48M80L

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 800 V 49A (Tc) 10V 200mOhm @ 24A, 10V 5V @ 2.5mA 305 nC @ 10 V ±30V 9330 pF @ 25 V - 1135W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPP041N12N3GXKSA1

IPP041N12N3GXKSA1

MOSFET N-CH 120V 120A TO220-3

Infineon Technologies
2,693 -

RFQ

IPP041N12N3GXKSA1

Ficha técnica

Tube OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 120 V 120A (Tc) 10V 4.1mOhm @ 100A, 10V 4V @ 270µA 211 nC @ 10 V ±20V 13800 pF @ 60 V - 300W (Tc) -55°C ~ 175°C (TJ) Through Hole
1500+
1500+ Média diária de RFQ
20,000.000
20,000.000 Unidade padrão do produto
1800+
1800+ Fabricantes em todo o mundo
15,000+
15,000+ Armazém em estoque
Fudong Communication (Shenzhen) Grupo Co., Ltd.

Início

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Produto

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Telefone

Fudong Communication (Shenzhen) Grupo Co., Ltd.

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