Transistores - FETs, MOSFETs - Único

Foto: Número da peça do fabricante Disponibilidade Preço Quantidade Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
FDMS2572

FDMS2572

POWER FIELD-EFFECT TRANSISTOR, 2

Fairchild Semiconductor
3,956 -

RFQ

FDMS2572

Ficha técnica

Bulk UltraFET™ Active N-Channel MOSFET (Metal Oxide) 150 V 4.5A (Ta), 27A (Tc) 6V, 10V 47mOhm @ 4.5A, 10V 4V @ 250µA 43 nC @ 10 V ±20V 2610 pF @ 75 V - 2.5W (Ta), 78W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SN7002WH6433

SN7002WH6433

SMALL SIGNAL FIELD-EFFECT TRANSI

Infineon Technologies
3,893 -

RFQ

SN7002WH6433

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
PSMN2R2-40BS,118

PSMN2R2-40BS,118

MOSFET N-CH 40V 100A D2PAK

NXP USA Inc.
3,597 -

RFQ

PSMN2R2-40BS,118

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 40 V 100A (Tc) 10V 2.2mOhm @ 25A, 10V 4V @ 1mA 130 nC @ 10 V ±20V 8423 pF @ 20 V - 306W (Tc) -55°C ~ 175°C (TJ) Surface Mount
FDC604P

FDC604P

SMALL SIGNAL FIELD-EFFECT TRANSI

Fairchild Semiconductor
2,305 -

RFQ

FDC604P

Ficha técnica

Bulk PowerTrench® Active P-Channel MOSFET (Metal Oxide) 20 V 5.5A (Ta) 1.8V, 4.5V 33mOhm @ 5.5A, 4.5V 1.5V @ 250µA 30 nC @ 4.5 V ±8V 1926 pF @ 10 V - 1.6W (Ta) -55°C ~ 150°C (TJ) Surface Mount
2N7000-D26Z

2N7000-D26Z

SMALL SIGNAL FIELD-EFFECT TRANSI

Fairchild Semiconductor
2,736 -

RFQ

2N7000-D26Z

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 60 V 200mA (Ta) 4.5V, 10V 5Ohm @ 500mA, 10V 3V @ 1mA - ±20V 50 pF @ 25 V - 400mW (Ta) -55°C ~ 150°C (TJ) Through Hole
FDD050N03B

FDD050N03B

MOSFET N-CH 30V 50A DPAK

Fairchild Semiconductor
2,762 -

RFQ

FDD050N03B

Ficha técnica

Bulk PowerTrench® Active N-Channel MOSFET (Metal Oxide) 30 V 50A (Tc) 4.5V, 10V 5mOhm @ 25A, 10V 3V @ 250µA 43 nC @ 10 V ±16V 2875 pF @ 15 V - 65W (Tc) -55°C ~ 175°C (TJ) Surface Mount
FQB6N40CTM

FQB6N40CTM

MOSFET N-CH 400V 6A D2PAK

Fairchild Semiconductor
3,606 -

RFQ

Bulk QFET® Active N-Channel MOSFET (Metal Oxide) 400 V 6A (Tc) 10V 1Ohm @ 3A, 10V 4V @ 250µA 20 nC @ 10 V ±30V 625 pF @ 25 V - 73W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRFF332

IRFF332

3A, 400V, 1.5OHM, N-CHANNEL POWE

International Rectifier
3,740 -

RFQ

IRFF332

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
PSMN3R5-80PS,127

PSMN3R5-80PS,127

NOW NEXPERIA PSMN3R5-80PS - 120A

NXP Semiconductors
3,885 -

RFQ

PSMN3R5-80PS,127

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 80 V 120A (Tc) 10V 3.5mOhm @ 25A, 10V 4V @ 1mA 139 nC @ 10 V ±20V 9961 pF @ 40 V - 338W (Tc) -55°C ~ 175°C (TJ) Through Hole
BUK765R3-40E,118

BUK765R3-40E,118

MOSFET N-CH 40V 75A D2PAK

NXP USA Inc.
2,202 -

RFQ

BUK765R3-40E,118

Ficha técnica

Bulk Automotive, AEC-Q101, TrenchMOS™ Active N-Channel MOSFET (Metal Oxide) 40 V 75A (Tc) 10V 4.9mOhm @ 25A, 10V 4V @ 1mA 35.5 nC @ 10 V ±20V 2772 pF @ 25 V - 137W (Tc) -55°C ~ 175°C (TJ) Surface Mount
AUIRFU540Z

AUIRFU540Z

MOSFET N-CH 100V 35A I-PAK

International Rectifier
3,357 -

RFQ

AUIRFU540Z

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 100 V 35A (Tc) 10V 28.5mOhm @ 21A, 10V 4V @ 50µA 59 nC @ 10 V ±20V 1690 pF @ 25 V - 91W (Tc) -55°C ~ 175°C (TJ) Through Hole
2SK4198LS

2SK4198LS

MOSFET N-CH 600V 5A TO220FI

Sanyo
2,179 -

RFQ

2SK4198LS

Ficha técnica

Bulk - Obsolete N-Channel MOSFET (Metal Oxide) 600 V 5A (Tc) 10V 2.34Ohm @ 2.5A, 10V 5V @ 1mA 14.3 nC @ 10 V ±30V 360 pF @ 30 V - 2W (Ta), 30W (Tc) 150°C (TJ) Through Hole
IPD50R500CEBTMA1

IPD50R500CEBTMA1

MOSFET N-CH 500V 7.6A TO252-3

Infineon Technologies
2,825 -

RFQ

IPD50R500CEBTMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT),Bulk CoolMOS™ Discontinued at Mosen N-Channel MOSFET (Metal Oxide) 500 V 7.6A (Tc) 13V 500mOhm @ 2.3A, 13V 3.5V @ 200µA 18.7 nC @ 10 V ±20V 433 pF @ 100 V Super Junction 57W (Tc) -55°C ~ 150°C (TJ) Surface Mount
BSZ0905PNSATMA1

BSZ0905PNSATMA1

MOSFET P-CH 30V 40A TDSON-8

Infineon Technologies
3,586 -

RFQ

BSZ0905PNSATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ Active P-Channel MOSFET (Metal Oxide) 30 V 40A (Tc) 6V, 10V 8.6mOhm @ 20A, 10V 1.9V @ 105µA 43.2 nC @ 10 V ±25V 3190 pF @ 15 V - 69W (Ta) -55°C ~ 150°C (TJ) Surface Mount
FDP12N50NZ

FDP12N50NZ

MOSFET N-CH 500V 11.5A TO220-3

Fairchild Semiconductor
3,457 -

RFQ

FDP12N50NZ

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 500 V 11.5A (Tc) 10V 520mOhm @ 5.75A, 10V 5V @ 250µA 30 nC @ 10 V ±25V 1235 pF @ 25 V - 170W (Tc) -55°C ~ 150°C (TJ) Through Hole
ECH8304-TL-E

ECH8304-TL-E

MOSFET P-CH 12V 9.5A 8ECH

Sanyo
2,527 -

RFQ

Bulk - Obsolete P-Channel MOSFET (Metal Oxide) 12 V 9.5A (Ta) - 16mOhm @ 4.5A, 4.5V - 33 nC @ 4.5 V - 3180 pF @ 6 V - 1.6W (Ta) 150°C (TJ) Surface Mount
IRF3007SPBF

IRF3007SPBF

MOSFET N-CH 75V 62A D2PAK

International Rectifier
2,265 -

RFQ

IRF3007SPBF

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 75 V 62A (Tc) 10V 12.6mOhm @ 48A, 10V 4V @ 250µA 130 nC @ 10 V ±20V 3270 pF @ 25 V - 120W (Tc) -55°C ~ 175°C (TJ) Surface Mount
FDP3652

FDP3652

POWER FIELD-EFFECT TRANSISTOR, 9

Fairchild Semiconductor
3,741 -

RFQ

FDP3652

Ficha técnica

Bulk PowerTrench® Active N-Channel MOSFET (Metal Oxide) 100 V 9A (Ta), 61A (Tc) 6V, 10V 16mOhm @ 61A, 10V 4V @ 250µA 53 nC @ 10 V ±20V 2880 pF @ 25 V - 150W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRF3710LPBF

IRF3710LPBF

MOSFET N-CH 100V 57A TO262

International Rectifier
3,913 -

RFQ

IRF3710LPBF

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 100 V 57A (Tc) 10V 23mOhm @ 28A, 10V 4V @ 250µA 130 nC @ 10 V ±20V 3130 pF @ 25 V - 200W (Tc) -55°C ~ 175°C (TJ) Through Hole
FDMS7676

FDMS7676

MOSFET N-CH 30V 16A/28A 8PQFN

Fairchild Semiconductor
2,340 -

RFQ

FDMS7676

Ficha técnica

Bulk PowerTrench® Active N-Channel MOSFET (Metal Oxide) 30 V 16A (Ta), 28A (Tc) 4.5V, 10V 5.5mOhm @ 19A, 10V 3V @ 250µA 44 nC @ 10 V ±20V 2960 pF @ 15 V - 2.5W (Ta), 48W (Tc) -55°C ~ 150°C (TJ) Surface Mount
1500+
1500+ Média diária de RFQ
20,000.000
20,000.000 Unidade padrão do produto
1800+
1800+ Fabricantes em todo o mundo
15,000+
15,000+ Armazém em estoque
Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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