Transistores - FETs, MOSFETs - Único

Foto: Número da peça do fabricante Disponibilidade Preço Quantidade Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IXFN70N120SK

IXFN70N120SK

SICFET N-CH 1200V 68A SOT227B

IXYS
2,272 -

RFQ

IXFN70N120SK

Ficha técnica

Tube - Active N-Channel SiCFET (Silicon Carbide) 1200 V 68A (Tc) 20V 34mOhm @ 50A, 20V 4V @ 15mA 161 nC @ 20 V +20V, -5V 2790 pF @ 1000 V - - -40°C ~ 175°C (TJ) Chassis Mount
APL502LG

APL502LG

MOSFET N-CH 500V 58A TO264

Microchip Technology
3,134 -

RFQ

APL502LG

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 500 V 58A (Tc) 15V 90mOhm @ 29A, 12V 4V @ 2.5mA - ±30V 9000 pF @ 25 V - 730W (Tc) -55°C ~ 150°C (TJ) Through Hole
BSM180C12P3C202

BSM180C12P3C202

SICFET N-CH 1200V 180A MODULE

Rohm Semiconductor
3,318 -

RFQ

BSM180C12P3C202

Ficha técnica

Bulk - Active N-Channel SiCFET (Silicon Carbide) 1200 V 180A (Tc) - - 5.6V @ 50mA - +22V, -4V 9000 pF @ 10 V - 880W (Tc) -40°C ~ 150°C (TJ) Chassis Mount
BSM300C12P3E201

BSM300C12P3E201

SICFET N-CH 1200V 300A MODULE

Rohm Semiconductor
2,133 -

RFQ

BSM300C12P3E201

Ficha técnica

Bulk - Active N-Channel SiCFET (Silicon Carbide) 1200 V 300A (Tc) - - 5.6V @ 80mA - +22V, -4V 15000 pF @ 10 V - 1360W (Tc) -40°C ~ 150°C (TJ) Chassis Mount
CSD13302WT

CSD13302WT

MOSFET N-CH 12V 1.6A 4DSBGA

Texas Instruments
965 -

RFQ

CSD13302WT

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) NexFET™ Active N-Channel MOSFET (Metal Oxide) 12 V 1.6A (Ta) 2.5V, 4.5V 17.1mOhm @ 1A, 4.5V 1.3V @ 250µA 7.8 nC @ 4.5 V ±10V 862 pF @ 6 V - 1.8W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IPSA70R1K2P7SAKMA1

IPSA70R1K2P7SAKMA1

MOSFET N-CH 700V 4.5A TO251-3

Infineon Technologies
106 -

RFQ

IPSA70R1K2P7SAKMA1

Ficha técnica

Tube CoolMOS™ P7 Active N-Channel MOSFET (Metal Oxide) 700 V 4.5A (Tc) 10V 1.2Ohm @ 900mA, 10V 3.5V @ 40µA 4.8 nC @ 400 V ±16V 174 pF @ 400 V - 25W (Tc) -40°C ~ 150°C (TJ) Through Hole
IPS60R1K0PFD7SAKMA1

IPS60R1K0PFD7SAKMA1

MOSFET N-CH 650V 4.7A TO251-3

Infineon Technologies
968 -

RFQ

Tube CoolMOS™PFD7 Active N-Channel MOSFET (Metal Oxide) 650 V 4.7A (Tc) 10V 1Ohm @ 1A, 10V 4.5V @ 50µA 6 nC @ 10 V ±20V 230 pF @ 400 V - 26W (Tc) -40°C ~ 150°C (TJ) Through Hole
IPA50R800CEXKSA2

IPA50R800CEXKSA2

MOSFET N-CH 500V 4.1A TO220

Infineon Technologies
490 -

RFQ

IPA50R800CEXKSA2

Ficha técnica

Tube CoolMOS™ CE Active N-Channel MOSFET (Metal Oxide) 500 V 4.1A (Tc) 13V 800mOhm @ 1.5A, 13V 3.5V @ 130µA 12.4 nC @ 10 V ±20V 280 pF @ 100 V - 26.4W (Tc) -40°C ~ 150°C (TJ) Through Hole
SIHP6N40D-GE3

SIHP6N40D-GE3

MOSFET N-CH 400V 6A TO220AB

Vishay Siliconix
288 -

RFQ

SIHP6N40D-GE3

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 400 V 6A (Tc) 10V 1Ohm @ 3A, 10V 5V @ 250µA 18 nC @ 10 V ±30V 311 pF @ 100 V - 104W (Tc) -55°C ~ 150°C (TJ) Through Hole
AOT414

AOT414

MOSFET N-CH 100V 5.6A/43A TO220

Alpha & Omega Semiconductor Inc.
357 -

RFQ

AOT414

Ficha técnica

Tube SDMOS™ Not For New Designs N-Channel MOSFET (Metal Oxide) 100 V 5.6A (Ta), 43A (Tc) 7V, 10V 25mOhm @ 20A, 10V 4V @ 250µA 34 nC @ 10 V ±25V 2200 pF @ 50 V - 1.9W (Ta), 115W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPAN70R750P7SXKSA1

IPAN70R750P7SXKSA1

MOSFET N-CH 700V 6.5A TO220

Infineon Technologies
148 -

RFQ

IPAN70R750P7SXKSA1

Ficha técnica

Tube CoolMOS™ P7 Active N-Channel MOSFET (Metal Oxide) 700 V 6.5A (Tc) 10V 750mOhm @ 1.4A, 10V 3.5V @ 70µA 8.3 nC @ 10 V ±16V 306 pF @ 400 V - 20.8W (Tc) -40°C ~ 150°C (TJ) Through Hole
RCX080N25

RCX080N25

MOSFET N-CH 250V 8A TO220FM

Rohm Semiconductor
495 -

RFQ

RCX080N25

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 250 V 8A (Tc) 10V 600mOhm @ 4A, 10V 5V @ 1mA 15 nC @ 10 V ±30V 840 pF @ 25 V - 2.23W (Ta), 35W (Tc) 150°C (TJ) Through Hole
IPA60R650CEXKSA1

IPA60R650CEXKSA1

MOSFET N-CH 600V 7A TO220-FP

Infineon Technologies
400 -

RFQ

IPA60R650CEXKSA1

Ficha técnica

Tube CoolMOS™ CE Active N-Channel MOSFET (Metal Oxide) 600 V 7A (Tc) 10V 650mOhm @ 2.4A, 10V 3.5V @ 200µA 20.5 nC @ 10 V ±20V 440 pF @ 100 V - 28W (Tc) -40°C ~ 150°C (TJ) Through Hole
IPS60R360PFD7SAKMA1

IPS60R360PFD7SAKMA1

MOSFET N-CH 650V 10A TO251-3

Infineon Technologies
984 -

RFQ

Tube CoolMOS™PFD7 Active N-Channel MOSFET (Metal Oxide) 650 V 10A (Tc) 10V 360mOhm @ 2.9A, 10V 4.5V @ 140µA 12.7 nC @ 10 V ±20V 534 pF @ 400 V - 43W (Tc) -40°C ~ 150°C (TJ) Through Hole
IRF830APBF-BE3

IRF830APBF-BE3

MOSFET N-CH 500V 5A TO220AB

Vishay Siliconix
1,000 -

RFQ

Tube - Active N-Channel MOSFET (Metal Oxide) 500 V 5A (Tc) 10V 1.4Ohm @ 3A, 10V 4.5V @ 250µA 24 nC @ 10 V ±30V 620 pF @ 25 V - 74W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFI520GPBF

IRFI520GPBF

MOSFET N-CH 100V 7.2A TO220-3

Vishay Siliconix
3,523 -

RFQ

IRFI520GPBF

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 100 V 7.2A (Tc) 10V 270mOhm @ 4.3A, 10V 4V @ 250µA 16 nC @ 10 V ±20V 360 pF @ 25 V - 37W (Tc) -55°C ~ 175°C (TJ) Through Hole
R6004ENX

R6004ENX

MOSFET N-CH 600V 4A TO220FM

Rohm Semiconductor
122 -

RFQ

R6004ENX

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 600 V 4A (Tc) 10V 980mOhm @ 1.5A, 10V 4V @ 1mA 15 nC @ 10 V ±20V 250 pF @ 25 V - 40W (Tc) 150°C (TJ) Through Hole
IRF9Z14SPBF

IRF9Z14SPBF

MOSFET P-CH 60V 6.7A D2PAK

Vishay Siliconix
1,000 -

RFQ

IRF9Z14SPBF

Ficha técnica

Tube - Active P-Channel MOSFET (Metal Oxide) 60 V 6.7A (Tc) 10V 500mOhm @ 4A, 10V 4V @ 250µA 12 nC @ 10 V ±20V 270 pF @ 25 V - 3.7W (Ta), 43W (Tc) -55°C ~ 175°C (TJ) Surface Mount
SIHF10N40D-E3

SIHF10N40D-E3

MOSFET N-CH 400V 10A TO220

Vishay Siliconix
652 -

RFQ

SIHF10N40D-E3

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 400 V 10A (Tc) 10V 600mOhm @ 5A, 10V 5V @ 250µA 30 nC @ 10 V ±30V 526 pF @ 100 V - 33W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPA50R280CEXKSA2

IPA50R280CEXKSA2

MOSFET N-CH 500V 7.5A TO220

Infineon Technologies
479 -

RFQ

IPA50R280CEXKSA2

Ficha técnica

Tube CoolMOS™ CE Active N-Channel MOSFET (Metal Oxide) 500 V 7.5A (Tc) 13V 280mOhm @ 4.2A, 13V 3.5V @ 350µA 32.6 nC @ 10 V ±20V 773 pF @ 100 V - 30.4W (Tc) -40°C ~ 150°C (TJ) Through Hole
1500+
1500+ Média diária de RFQ
20,000.000
20,000.000 Unidade padrão do produto
1800+
1800+ Fabricantes em todo o mundo
15,000+
15,000+ Armazém em estoque
Fudong Communication (Shenzhen) Grupo Co., Ltd.

Início

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Produto

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Telefone

Fudong Communication (Shenzhen) Grupo Co., Ltd.

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