Transistores - FETs, MOSFETs - Único

Foto: Número da peça do fabricante Disponibilidade Preço Quantidade Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IRF820SPBF

IRF820SPBF

MOSFET N-CH 500V 2.5A D2PAK

Vishay Siliconix
593 -

RFQ

IRF820SPBF

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 500 V 2.5A (Tc) 10V 3Ohm @ 1.5A, 10V 4V @ 250µA 24 nC @ 10 V ±20V 360 pF @ 25 V - 3.1W (Ta), 50W (Tc) -55°C ~ 150°C (TJ) Surface Mount
TK6A80E,S4X

TK6A80E,S4X

MOSFET N-CH 800V 6A TO220SIS

Toshiba Semiconductor and Storage
2,678 -

RFQ

TK6A80E,S4X

Ficha técnica

Tube π-MOSVIII Active N-Channel MOSFET (Metal Oxide) 800 V 6A (Ta) 10V 1.7Ohm @ 3A, 10V 4V @ 600µA 32 nC @ 10 V ±30V 1350 pF @ 25 V - 45W (Tc) 150°C (TJ) Through Hole
IRF730APBF

IRF730APBF

MOSFET N-CH 400V 5.5A TO220AB

Vishay Siliconix
1,000 -

RFQ

IRF730APBF

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 400 V 5.5A (Tc) 10V 1Ohm @ 3.3A, 10V 4.5V @ 250µA 22 nC @ 10 V ±30V 600 pF @ 25 V - 74W (Tc) -55°C ~ 150°C (TJ) Through Hole
HUF75332P3

HUF75332P3

MOSFET N-CH 55V 60A TO220-3

onsemi
562 -

RFQ

HUF75332P3

Ficha técnica

Tube UltraFET™ Active N-Channel MOSFET (Metal Oxide) 55 V 60A (Tc) 10V 19mOhm @ 60A, 10V 4V @ 250µA 85 nC @ 20 V ±20V 1300 pF @ 25 V - 145W (Tc) -55°C ~ 175°C (TJ) Through Hole
R6004KNX

R6004KNX

MOSFET N-CH 600V 4A TO220FM

Rohm Semiconductor
341 -

RFQ

R6004KNX

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 600 V 4A (Tc) 10V 980mOhm @ 1.5A, 10V 5V @ 1mA 10.2 nC @ 10 V ±20V 280 pF @ 25 V - 40W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFU430APBF

IRFU430APBF

MOSFET N-CH 500V 5A TO251AA

Vishay Siliconix
408 -

RFQ

IRFU430APBF

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 500 V 5A (Tc) 10V 1.7Ohm @ 3A, 10V 4.5V @ 250µA 24 nC @ 10 V ±30V 490 pF @ 25 V - 110W (Tc) -55°C ~ 150°C (TJ) Through Hole
R6011KNX

R6011KNX

MOSFET N-CH 600V 11A TO220FM

Rohm Semiconductor
489 -

RFQ

R6011KNX

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 600 V 11A (Tc) 10V 390mOhm @ 3.8A, 10V 5V @ 1mA 22 nC @ 10 V ±20V 740 pF @ 25 V - 53W (Tc) -55°C ~ 150°C (TJ) Through Hole
R6009KNX

R6009KNX

MOSFET N-CH 600V 9A TO220FM

Rohm Semiconductor
486 -

RFQ

R6009KNX

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 600 V 9A (Tc) 10V 535mOhm @ 2.8A, 10V 5V @ 1mA 16.5 nC @ 10 V ±20V 540 pF @ 25 V - 48W (Tc) -55°C ~ 150°C (TJ) Through Hole
FCP380N60

FCP380N60

MOSFET N-CH 600V 10.2A TO220-3

onsemi
2,644 -

RFQ

FCP380N60

Ficha técnica

Tube,Tube SuperFET® II Active N-Channel MOSFET (Metal Oxide) 600 V 10.2A (Tc) 10V 380mOhm @ 5A, 10V 3.5V @ 250µA 40 nC @ 10 V ±20V 1665 pF @ 25 V - 106W (Tc) -55°C ~ 150°C (TJ) Through Hole
TK56A12N1,S4X

TK56A12N1,S4X

MOSFET N-CH 120V 56A TO220SIS

Toshiba Semiconductor and Storage
2,258 -

RFQ

TK56A12N1,S4X

Ficha técnica

Tube U-MOSVIII-H Active N-Channel MOSFET (Metal Oxide) 120 V 56A (Tc) 10V 7.5mOhm @ 28A, 10V 4V @ 1mA 69 nC @ 10 V ±20V 4200 pF @ 60 V - 45W (Tc) 150°C (TJ) Through Hole
FDPF13N50FT

FDPF13N50FT

MOSFET N-CH 500V 12A TO220F

onsemi
915 -

RFQ

FDPF13N50FT

Ficha técnica

Tube UniFET™ Last Time Buy N-Channel MOSFET (Metal Oxide) 500 V 12A (Tc) 10V 540mOhm @ 6A, 10V 5V @ 250µA 39 nC @ 10 V ±30V 1930 pF @ 25 V - 42W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRF540PBF-BE3

IRF540PBF-BE3

MOSFET N-CH 100V 28A TO220AB

Vishay Siliconix
662 -

RFQ

Tube - Active N-Channel MOSFET (Metal Oxide) 100 V 28A (Tc) 10V 77mOhm @ 11A, 10V 4V @ 250µA 72 nC @ 10 V ±20V 1700 pF @ 25 V - 150W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRF830ASPBF

IRF830ASPBF

MOSFET N-CH 500V 5A D2PAK

Vishay Siliconix
806 -

RFQ

IRF830ASPBF

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 500 V 5A (Tc) 10V 1.4Ohm @ 3A, 10V 4.5V @ 250µA 24 nC @ 10 V ±30V 620 pF @ 25 V - 3.1W (Ta), 74W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRF830SPBF

IRF830SPBF

MOSFET N-CH 500V 4.5A D2PAK

Vishay Siliconix
300 -

RFQ

IRF830SPBF

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 500 V 4.5A (Tc) 10V 1.5Ohm @ 2.7A, 10V 4V @ 250µA 38 nC @ 10 V ±20V 610 pF @ 25 V - 3.1W (Ta), 74W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRF4104PBF

IRF4104PBF

MOSFET N-CH 40V 75A TO220AB

Infineon Technologies
998 -

RFQ

IRF4104PBF

Ficha técnica

Tube HEXFET® Active N-Channel MOSFET (Metal Oxide) 40 V 75A (Tc) 10V 5.5mOhm @ 75A, 10V 4V @ 250µA 100 nC @ 10 V ±20V 3000 pF @ 25 V - 140W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPS60R210PFD7SAKMA1

IPS60R210PFD7SAKMA1

MOSFET N-CH 650V 16A TO251-3

Infineon Technologies
308 -

RFQ

Tube CoolMOS™PFD7 Active N-Channel MOSFET (Metal Oxide) 650 V 16A (Tc) 10V 210mOhm @ 4.9A, 10V 4.5V @ 240µA 23 nC @ 10 V ±20V 1015 pF @ 400 V - 64W (Tc) -40°C ~ 150°C (TJ) Through Hole
IRL630PBF

IRL630PBF

MOSFET N-CH 200V 9A TO220AB

Vishay Siliconix
990 -

RFQ

IRL630PBF

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 200 V 9A (Tc) 4V, 5V 400mOhm @ 5.4A, 5V 2V @ 250µA 40 nC @ 10 V ±10V 1100 pF @ 25 V - 74W (Tc) -55°C ~ 150°C (TJ) Through Hole
SIHF7N60E-E3

SIHF7N60E-E3

MOSFET N-CH 600V 7A TO220

Vishay Siliconix
812 -

RFQ

SIHF7N60E-E3

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 600 V 7A (Tc) 10V 600mOhm @ 3.5A, 10V 4V @ 250µA 40 nC @ 10 V ±30V 680 pF @ 100 V - 31W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPI029N06NAKSA1

IPI029N06NAKSA1

MOSFET N-CH 60V 24A/100A TO262-3

Infineon Technologies
246 -

RFQ

IPI029N06NAKSA1

Ficha técnica

Tube OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 60 V 24A (Ta), 100A (Tc) 6V, 10V 2.9mOhm @ 100A, 10V 2.8V @ 75µA 56 nC @ 10 V ±20V 4100 pF @ 30 V - 3W (Ta), 136W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPAN60R210PFD7SXKSA1

IPAN60R210PFD7SXKSA1

MOSFET N-CH 650V 16A TO220

Infineon Technologies
840 -

RFQ

Tube CoolMOS™PFD7 Active N-Channel MOSFET (Metal Oxide) 650 V 16A (Tc) 10V 210mOhm @ 4.9A, 10V 4.5V @ 240µA 23 nC @ 10 V ±20V 1015 pF @ 400 V - 25W (Tc) -40°C ~ 150°C (TJ) Through Hole
1500+
1500+ Média diária de RFQ
20,000.000
20,000.000 Unidade padrão do produto
1800+
1800+ Fabricantes em todo o mundo
15,000+
15,000+ Armazém em estoque
Fudong Communication (Shenzhen) Grupo Co., Ltd.

Início

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Produto

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Telefone

Fudong Communication (Shenzhen) Grupo Co., Ltd.

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