Transistores - FETs, MOSFETs - Único

Foto: Número da peça do fabricante Disponibilidade Preço Quantidade Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
BUK9Y14-40B,115

BUK9Y14-40B,115

TRANSISTOR >30MHZ

NXP USA Inc.
2,099 -

RFQ

BUK9Y14-40B,115

Ficha técnica

Bulk Automotive, AEC-Q101, TrenchMOS™ Active N-Channel MOSFET (Metal Oxide) 40 V 56A (Tc) 5V 11mOhm @ 20A, 10V 2V @ 1mA 21 nC @ 5 V ±15V 1800 pF @ 25 V - 85W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPN50R3K0CE

IPN50R3K0CE

SMALL SIGNAL FIELD-EFFECT TRANSI

Infineon Technologies
3,357 -

RFQ

IPN50R3K0CE

Ficha técnica

Bulk CoolMOS™ CE Active N-Channel MOSFET (Metal Oxide) 500 V 2.6A (Tc) 13V 3Ohm @ 400mA, 13V 3.5V @ 30µA 4.3 nC @ 10 V ±20V 84 pF @ 100 V - 5W (Tc) -40°C ~ 150°C (TJ) Surface Mount
FDFM2N111

FDFM2N111

MOSFET N-CH 20V 4A MICROFET

Fairchild Semiconductor
2,487 -

RFQ

FDFM2N111

Ficha técnica

Bulk PowerTrench® Active N-Channel MOSFET (Metal Oxide) 20 V 4A (Ta) 2.5V, 4.5V 100mOhm @ 4A, 4.5V 1.5V @ 250µA 3.8 nC @ 4.5 V ±12V 273 pF @ 10 V Schottky Diode (Isolated) 1.7W (Ta) -55°C ~ 150°C (TJ) Surface Mount
FQP15P12

FQP15P12

MOSFET P-CH 120V 15A TO220-3

Fairchild Semiconductor
2,362 -

RFQ

FQP15P12

Ficha técnica

Bulk QFET® Active P-Channel MOSFET (Metal Oxide) 120 V 15A (Tc) 10V 200mOhm @ 7.5A, 10V 4V @ 250µA 38 nC @ 10 V ±30V 1100 pF @ 25 V - 100W (Tc) -55°C ~ 175°C (TJ) Through Hole
FQP44N10

FQP44N10

POWER MOSFET, N-CHANNEL, QFET, 1

Fairchild Semiconductor
2,351 -

RFQ

FQP44N10

Ficha técnica

Bulk QFET® Active N-Channel MOSFET (Metal Oxide) 100 V 43.5A (Tc) 10V 39mOhm @ 21.75A, 10V 4V @ 250µA 62 nC @ 10 V ±25V 1800 pF @ 25 V - 146W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRLR7821TRPBF

IRLR7821TRPBF

MOSFET N-CH 30V 65A DPAK

International Rectifier
2,667 -

RFQ

IRLR7821TRPBF

Ficha técnica

Bulk HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 65A (Tc) 4.5V, 10V 10mOhm @ 15A, 10V 1V @ 250µA 14 nC @ 4.5 V ±20V 1030 pF @ 15 V - 75W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRLR3114ZPBF

IRLR3114ZPBF

MOSFET N-CH 40V 42A DPAK

International Rectifier
2,281 -

RFQ

IRLR3114ZPBF

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 40 V 42A (Tc) 4.5V, 10V 4.9mOhm @ 42A, 10V 2.5V @ 100µA 56 nC @ 4.5 V ±16V 3810 pF @ 25 V - 140W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRF6724MTRPBF

IRF6724MTRPBF

MOSFET N-CH 30V 27A/150A DIRECT

International Rectifier
3,407 -

RFQ

IRF6724MTRPBF

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 30 V 27A (Ta), 150A (Tc) 4.5V, 10V 2.5mOhm @ 27A, 10V 2.35V @ 100µA 54 nC @ 4.5 V ±20V 4404 pF @ 15 V - 2.8W (Ta), 89W (Tc) -40°C ~ 150°C (TJ) Surface Mount
FDD4243

FDD4243

POWER FIELD-EFFECT TRANSISTOR, 6

Fairchild Semiconductor
2,189 -

RFQ

FDD4243

Ficha técnica

Bulk PowerTrench® Active P-Channel MOSFET (Metal Oxide) 40 V 6.7A (Ta), 14A (Tc) 4.5V, 10V 44mOhm @ 6.7A, 10V 3V @ 250µA 29 nC @ 10 V ±20V 1550 pF @ 20 V - 42W (Tc) -55°C ~ 150°C (TJ) Surface Mount
FDP18N20F

FDP18N20F

POWER FIELD-EFFECT TRANSISTOR, 1

Fairchild Semiconductor
2,725 -

RFQ

FDP18N20F

Ficha técnica

Bulk UniFET™ Active N-Channel MOSFET (Metal Oxide) 200 V 18A (Tc) 10V 145mOhm @ 9A, 10V 5V @ 250µA 26 nC @ 10 V ±30V 1180 pF @ 25 V - 100W (Tc) -55°C ~ 150°C (TJ) Through Hole
FDMS7698

FDMS7698

POWER FIELD-EFFECT TRANSISTOR, 1

Fairchild Semiconductor
3,056 -

RFQ

FDMS7698

Ficha técnica

Bulk PowerTrench® Active N-Channel MOSFET (Metal Oxide) 30 V 13.5A (Ta), 22A (Tc) 4.5V, 10V 10mOhm @ 13.5A, 10V 3V @ 250µA 24 nC @ 10 V ±20V 1605 pF @ 15 V - 2.5W (Ta), 29W (Tc) -55°C ~ 150°C (TJ) Surface Mount
FQPF27P06

FQPF27P06

POWER FIELD-EFFECT TRANSISTOR, 1

Fairchild Semiconductor
3,108 -

RFQ

FQPF27P06

Ficha técnica

Bulk QFET® Active P-Channel MOSFET (Metal Oxide) 60 V 17A (Tc) - 70mOhm @ 8.5A, 10V 4V @ 250µA 43 nC @ 10 V ±25V 1400 pF @ 25 V - 47W (Tc) -55°C ~ 175°C (TJ) Through Hole
AUIRF4905

AUIRF4905

AUIRF4905 - 20V-150V P-CHANNEL A

International Rectifier
2,370 -

RFQ

AUIRF4905

Ficha técnica

Bulk HEXFET® Active P-Channel MOSFET (Metal Oxide) 55 V 74A (Tc) 10V 20mOhm @ 38A, 10V 4V @ 250µA 180 nC @ 10 V ±20V 3400 pF @ 25 V - 200W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPP60R060P7

IPP60R060P7

600V, 0.06OHM, N-CHANNEL MOSFET

Infineon Technologies
2,526 -

RFQ

IPP60R060P7

Ficha técnica

Bulk * Active - - - - - - - - - - - - -
MTD3055VL

MTD3055VL

POWER FIELD-EFFECT TRANSISTOR, 1

Fairchild Semiconductor
3,520 -

RFQ

MTD3055VL

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 60 V 12A (Tc) 5V 180mOhm @ 6A, 5V 2V @ 250µA 10 nC @ 5 V ±20V 570 pF @ 25 V - 3.9W (Ta), 48W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFR1205TRPBF

IRFR1205TRPBF

IRFR1205 - 12V-300V N-CHANNEL PO

International Rectifier
2,023 -

RFQ

IRFR1205TRPBF

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 55 V 44A (Tc) 10V 27mOhm @ 26A, 10V 4V @ 250µA 65 nC @ 10 V ±20V 1300 pF @ 25 V - 107W (Tc) -55°C ~ 175°C (TJ) Surface Mount
FDH047AN08A0

FDH047AN08A0

MOSFET N-CH 75V 15A TO247-3

Fairchild Semiconductor
3,553 -

RFQ

FDH047AN08A0

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 75 V 15A (Tc) 6V, 10V 4.7mOhm @ 80A, 10V 4V @ 250µA 138 nC @ 10 V ±20V 6600 pF @ 25 V - 310W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPA057N08N3G

IPA057N08N3G

IPA057N08 - 12V-300V N-CHANNEL P

Infineon Technologies
3,695 -

RFQ

IPA057N08N3G

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
FQP20N06TSTU

FQP20N06TSTU

MOSFET N-CH 60V 20A TO220-3

Fairchild Semiconductor
3,819 -

RFQ

Bulk QFET® Obsolete N-Channel MOSFET (Metal Oxide) 60 V 20A (Tc) 10V 60mOhm @ 10A, 10V 4V @ 250µA 15 nC @ 10 V ±25V 590 pF @ 25 V - 53W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPN80R2K0P7

IPN80R2K0P7

IPN80R2K0 - 800V COOLMOS N-CHANN

Infineon Technologies
2,010 -

RFQ

IPN80R2K0P7

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
1500+
1500+ Média diária de RFQ
20,000.000
20,000.000 Unidade padrão do produto
1800+
1800+ Fabricantes em todo o mundo
15,000+
15,000+ Armazém em estoque
Fudong Communication (Shenzhen) Grupo Co., Ltd.

Início

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Produto

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Telefone

Fudong Communication (Shenzhen) Grupo Co., Ltd.

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