Transistores - FETs, MOSFETs - Único

Foto: Número da peça do fabricante Disponibilidade Preço Quantidade Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
BSZ050N03LSG

BSZ050N03LSG

BSZ050N03 - 12V-300V N-CHANNEL P

Infineon Technologies
2,493 -

RFQ

BSZ050N03LSG

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
AUIRLS3036TRL

AUIRLS3036TRL

MOSFET N-CH 60V 195A D2PAK

International Rectifier
3,507 -

RFQ

AUIRLS3036TRL

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 60 V 195A (Tc) 4.5V, 10V 2.4mOhm @ 165A, 10V 2.5V @ 250µA 140 nC @ 4.5 V ±16V 11210 pF @ 50 V - 380W (Tc) -55°C ~ 175°C (TJ) Surface Mount
HUF75639G3

HUF75639G3

N-CHANNEL ULTRAFET POWER MOSFET

Fairchild Semiconductor
2,058 -

RFQ

HUF75639G3

Ficha técnica

Bulk UltraFET™ Active N-Channel MOSFET (Metal Oxide) 100 V 56A (Tc) 10V 25mOhm @ 56A, 10V 4V @ 250µA 130 nC @ 20 V ±20V 2000 pF @ 25 V - 200W (Tc) -55°C ~ 175°C (TJ) Through Hole
FCH060N80-F155

FCH060N80-F155

MOSFET N-CH 800V 56A TO247

Fairchild Semiconductor
3,768 -

RFQ

FCH060N80-F155

Ficha técnica

Bulk SuperFET® II Active N-Channel MOSFET (Metal Oxide) 800 V 56A (Tc) 10V 60mOhm @ 29A, 10V 4.5V @ 5.8mA 350 nC @ 10 V ±20V 14685 pF @ 100 V Super Junction 500W (Tc) -55°C ~ 150°C (TJ) Through Hole
PMPB15XP,115

PMPB15XP,115

NOW NEXPERIA PMPB15XP - 8.2A, 12

NXP USA Inc.
2,666 -

RFQ

PMPB15XP,115

Ficha técnica

Bulk - Active P-Channel MOSFET (Metal Oxide) 12 V 8.2A (Ta) 1.8V, 4.5V 19mOhm @ 8.2A, 4.5V 900mV @ 250µA 100 nC @ 4.5 V ±12V 2875 pF @ 6 V - 1.7W (Ta), 12.5W (Tc) -55°C ~ 150°C (TJ) Surface Mount
AUIRF6215

AUIRF6215

MOSFET P-CH 150V 13A TO220AB

International Rectifier
2,025 -

RFQ

AUIRF6215

Ficha técnica

Bulk HEXFET® Active P-Channel MOSFET (Metal Oxide) 150 V 13A (Tc) 10V 290mOhm @ 6.6A, 10V 4V @ 250µA 66 nC @ 10 V ±20V 860 pF @ 25 V - 110W (Tc) -55°C ~ 175°C (TJ) Through Hole
FDMS7560S

FDMS7560S

MOSFET N-CH 25V 30A/49A 8PQFN

Fairchild Semiconductor
2,128 -

RFQ

FDMS7560S

Ficha técnica

Bulk PowerTrench®, SyncFET™ Active N-Channel MOSFET (Metal Oxide) 25 V 30A (Ta), 49A (Tc) 4.5V, 10V 1.45mOhm @ 30A, 10V 3V @ 1mA 93 nC @ 10 V ±20V 5945 pF @ 13 V - 2.5W (Ta), 89W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRFR120NTRRPBF

IRFR120NTRRPBF

MOSFET N-CH 100V 9.4A DPAK

International Rectifier
2,566 -

RFQ

IRFR120NTRRPBF

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 100 V 9.4A (Tc) 10V 210mOhm @ 5.6A, 10V 4V @ 250µA 25 nC @ 10 V ±20V 330 pF @ 25 V - 48W (Tc) - Surface Mount
IRFR1010ZTRLPBF

IRFR1010ZTRLPBF

MOSFET N-CH 55V 42A DPAK

International Rectifier
2,446 -

RFQ

IRFR1010ZTRLPBF

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 55 V 42A (Tc) 10V 7.5mOhm @ 42A, 10V 4V @ 100µA 95 nC @ 10 V ±20V 2840 pF @ 25 V - 140W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFS3006TRLPBF

IRFS3006TRLPBF

IRFS3006 - HEXFET N-CHANNEL POWE

International Rectifier
2,531 -

RFQ

IRFS3006TRLPBF

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 60 V 195A (Tc) 10V 2.5mOhm @ 170A, 10V 4V @ 250µA 300 nC @ 10 V ±20V 8970 pF @ 50 V - 375W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFSL3207ZPBF

IRFSL3207ZPBF

IRFSL3207 - 12V-300V N-CHANNEL P

International Rectifier
3,317 -

RFQ

IRFSL3207ZPBF

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 75 V 120A (Tc) 10V 4.1mOhm @ 75A, 10V 4V @ 150µA 170 nC @ 10 V ±20V 6920 pF @ 50 V - 300W (Tc) -55°C ~ 175°C (TJ) Through Hole
FQB27P06TM

FQB27P06TM

POWER FIELD-EFFECT TRANSISTOR, 2

Fairchild Semiconductor
2,993 -

RFQ

FQB27P06TM

Ficha técnica

Bulk QFET® Active P-Channel MOSFET (Metal Oxide) 60 V 27A (Tc) 10V 70mOhm @ 13.5A, 10V 4V @ 250µA 43 nC @ 10 V ±25V 1400 pF @ 25 V - 3.75W (Ta), 120W (Tc) -55°C ~ 175°C (TJ) Surface Mount
FDS6676AS

FDS6676AS

SMALL SIGNAL FIELD-EFFECT TRANSI

Fairchild Semiconductor
3,013 -

RFQ

FDS6676AS

Ficha técnica

Bulk PowerTrench®, SyncFET™ Active N-Channel MOSFET (Metal Oxide) 30 V 14.5A (Ta) 4.5V, 10V 6mOhm @ 14.5A, 10V 3V @ 1mA 63 nC @ 10 V ±20V 2510 pF @ 15 V - 2.5W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IPP80N06S2-H5

IPP80N06S2-H5

IPP80N06 - 55V-60V N-CHANNEL AUT

Infineon Technologies
2,086 -

RFQ

IPP80N06S2-H5

Ficha técnica

Bulk CoolMOS™ Active N-Channel MOSFET (Metal Oxide) 55 V 80A (Tc) 10V 5.5mOhm @ 80A, 10V 4V @ 230µA 155 nC @ 10 V ±20V 4400 pF @ 25 V - 300W (Tc) -55°C ~ 175°C (TJ) Through Hole
FQD5N20LTM

FQD5N20LTM

POWER FIELD-EFFECT TRANSISTOR, 3

Fairchild Semiconductor
3,389 -

RFQ

FQD5N20LTM

Ficha técnica

Bulk QFET® Active N-Channel MOSFET (Metal Oxide) 200 V 3.8A (Tc) 5V, 10V 1.2Ohm @ 1.9A, 10V 2V @ 250µA 6.2 nC @ 5 V ±20V 325 pF @ 25 V - 2.5W (Ta), 37W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRFR4104TRLPBF

IRFR4104TRLPBF

MOSFET N-CH 40V 42A DPAK

International Rectifier
2,691 -

RFQ

IRFR4104TRLPBF

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 40 V 42A (Tc) 10V 5.5mOhm @ 42A, 10V 4V @ 250µA 89 nC @ 10 V ±20V 2950 pF @ 25 V - 140W (Tc) -55°C ~ 175°C (TJ) Surface Mount
FQA70N15

FQA70N15

POWER FIELD-EFFECT TRANSISTOR, 7

Fairchild Semiconductor
3,285 -

RFQ

FQA70N15

Ficha técnica

Bulk QFET® Active N-Channel MOSFET (Metal Oxide) 150 V 70A (Tc) 10V 28mOhm @ 35A, 10V 4V @ 250µA 175 nC @ 10 V ±25V 5400 pF @ 25 V - 330W (Tc) -55°C ~ 175°C (TJ) Through Hole
FDS6679AZ

FDS6679AZ

POWER FIELD-EFFECT TRANSISTOR, 1

Fairchild Semiconductor
2,353 -

RFQ

FDS6679AZ

Ficha técnica

Bulk PowerTrench® Active P-Channel MOSFET (Metal Oxide) 30 V 13A (Ta) 4.5V, 10V 9.3mOhm @ 13A, 10V 3V @ 250µA 96 nC @ 10 V ±25V 3845 pF @ 15 V - 2.5W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IRFSL7787PBF

IRFSL7787PBF

IRFSL7787 - 12V-300V N-CHANNEL P

Infineon Technologies
3,909 -

RFQ

IRFSL7787PBF

Ficha técnica

Bulk HEXFET®, StrongIRFET™ Active N-Channel MOSFET (Metal Oxide) 75 V 76A (Tc) - 8.4mOhm @ 46A, 10V 3.7V @ 100µA 109 nC @ 10 V ±20V 4020 pF @ 25 V - 125W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPA65R600E6

IPA65R600E6

IPA65R600 - 650V AND 700V COOLMO

Infineon Technologies
2,486 -

RFQ

IPA65R600E6

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
1500+
1500+ Média diária de RFQ
20,000.000
20,000.000 Unidade padrão do produto
1800+
1800+ Fabricantes em todo o mundo
15,000+
15,000+ Armazém em estoque
Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

Produto

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Telefone

Fudong Communication (Shenzhen) Grupo Co., Ltd.

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