Transistores - FETs, MOSFETs - Único

Foto: Número da peça do fabricante Disponibilidade Preço Quantidade Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IRF8788PBF

IRF8788PBF

MOSFET N-CH 30V 24A 8SO

International Rectifier
2,439 -

RFQ

IRF8788PBF

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 30 V 24A (Ta) 4.5V, 10V 2.8mOhm @ 24A, 10V 2.35V @ 100µA 66 nC @ 4.5 V ±20V 5720 pF @ 15 V - 2.5W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IPW60R099CPA

IPW60R099CPA

IPW60R099 - 600V-800V N-CHANNEL

Infineon Technologies
3,695 -

RFQ

IPW60R099CPA

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
IPW60R125CP

IPW60R125CP

25A, 600V, 0.125OHM, N-CHANNEL M

Infineon Technologies
3,161 -

RFQ

IPW60R125CP

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
FCH085N80-F155

FCH085N80-F155

MOSFET N-CH 800V 46A TO247

Fairchild Semiconductor
2,718 -

RFQ

FCH085N80-F155

Ficha técnica

Bulk SuperFET® II Active N-Channel MOSFET (Metal Oxide) 800 V 46A (Tc) 10V 85mOhm @ 23A, 10V 4.5V @ 4.6mA 255 nC @ 10 V ±20V 10825 pF @ 100 V Super Junction 446W (Tc) -55°C ~ 150°C (TJ) Through Hole
AUIRF4905STRL

AUIRF4905STRL

AUIRF4905S - 20V-150V P-CHANNEL

International Rectifier
2,107 -

RFQ

AUIRF4905STRL

Ficha técnica

Bulk Automotive, AEC-Q101, HEXFET® Active P-Channel MOSFET (Metal Oxide) 55 V 42A (Tc) 10V 20mOhm @ 42A, 10V 4V @ 250µA 180 nC @ 10 V ±20V 3500 pF @ 25 V - 200W (Tc) -55°C ~ 150°C (TJ) Surface Mount
AUIRFR540ZTRL

AUIRFR540ZTRL

MOSFET N-CH 100V 35A DPAK

International Rectifier
2,381 -

RFQ

AUIRFR540ZTRL

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 100 V 35A (Tc) 10V 28.5mOhm @ 21A, 10V 4V @ 50µA 59 nC @ 10 V ±20V 1690 pF @ 25 V - 91W (Tc) -55°C ~ 175°C (TJ) Surface Mount
2SK3704

2SK3704

MOSFET N-CH 60V 45A TO220ML

Sanyo
3,584 -

RFQ

2SK3704

Ficha técnica

Bulk - Obsolete N-Channel MOSFET (Metal Oxide) 60 V 45A (Ta) 4V, 10V 14mOhm @ 23A, 10V - 67 nC @ 10 V ±20V 3500 pF @ 20 V - 2W (Ta), 30W (Tc) 150°C (TJ) Through Hole
IPD060N03LG

IPD060N03LG

OPTLMOS N-CHANNEL POWER MOSFET

Infineon Technologies
2,778 -

RFQ

IPD060N03LG

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
FDPF3860T

FDPF3860T

POWER FIELD-EFFECT TRANSISTOR, 2

Fairchild Semiconductor
3,136 -

RFQ

FDPF3860T

Ficha técnica

Bulk PowerTrench® Active N-Channel MOSFET (Metal Oxide) 100 V 20A (Tc) 10V 38.2mOhm @ 5.9A, 10V 4.5V @ 250µA 35 nC @ 10 V ±20V 1800 pF @ 25 V - 33.8W (Tc) -55°C ~ 150°C (TJ) Through Hole
FQD13N10TM

FQD13N10TM

POWER FIELD-EFFECT TRANSISTOR, 1

Fairchild Semiconductor
3,349 -

RFQ

FQD13N10TM

Ficha técnica

Bulk QFET® Active N-Channel MOSFET (Metal Oxide) 100 V 10A (Tc) 10V 180mOhm @ 5A, 10V 4V @ 250µA 16 nC @ 10 V ±25V 450 pF @ 25 V - 2.5W (Ta), 40W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IPI60R125CP

IPI60R125CP

25A, 600V, 0.125OHM, N-CHANNEL M

Infineon Technologies
3,335 -

RFQ

IPI60R125CP

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
IRFR4105PBF

IRFR4105PBF

MOSFET N-CH 55V 27A DPAK

International Rectifier
2,629 -

RFQ

IRFR4105PBF

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 55 V 27A (Tc) 10V 45mOhm @ 16A, 10V 4V @ 250µA 34 nC @ 10 V ±20V 700 pF @ 25 V - 68W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRF1324S-7PPBF

IRF1324S-7PPBF

MOSFET N-CH 24V 240A D2PAK

International Rectifier
3,139 -

RFQ

IRF1324S-7PPBF

Ficha técnica

Bulk HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 24 V 240A (Tc) 10V 1mOhm @ 160A, 10V 4V @ 250µA 252 nC @ 10 V ±20V 7700 pF @ 19 V - 300W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFS4010TRL7PP

IRFS4010TRL7PP

IRFS4010 - 12V-300V N-CHANNEL PO

International Rectifier
3,809 -

RFQ

IRFS4010TRL7PP

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 100 V 190A (Tc) 10V 4mOhm @ 110A, 10V 4V @ 250µA 230 nC @ 10 V ±20V 9830 pF @ 50 V - 380W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPN50R950CE

IPN50R950CE

COOLMOS N-CHANNEL POWER MOSFET

Infineon Technologies
3,628 -

RFQ

IPN50R950CE

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
IPA60R190C6

IPA60R190C6

POWER FIELD-EFFECT TRANSISTOR, 2

Infineon Technologies
2,714 -

RFQ

IPA60R190C6

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
PSMN021-100YLX

PSMN021-100YLX

PSMN021-100YL - N-CHANNEL 100V

NXP USA Inc.
2,686 -

RFQ

PSMN021-100YLX

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 100 V 49A (Tc) 5V, 10V 21.5mOhm @ 15A, 10V 2.1V @ 1mA 65.6 nC @ 10 V ±20V 4640 pF @ 25 V - 147W (Tc) -55°C ~ 175°C (TJ)
FDMC15N06

FDMC15N06

MOSFET N-CH 55V 2.4A/15A 8MLP

Fairchild Semiconductor
3,287 -

RFQ

FDMC15N06

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 55 V 2.4A (Ta), 15A (Tc) 10V 900mOhm @ 15A, 10V 4V @ 250µA 11.5 nC @ 10 V ±20V 350 pF @ 25 V - 2.3W (Ta), 35W (Tc) -55°C ~ 150°C (TJ) Surface Mount
BS170

BS170

MOSFET N-CH 60V 300MA TO92-3

Fairchild Semiconductor
2,378 -

RFQ

BS170

Ficha técnica

Bulk - Obsolete N-Channel MOSFET (Metal Oxide) 60 V 300mA (Ta) - 5Ohm @ 200mA, 10V 3V @ 1mA - - 60 pF @ 10 V - - - Through Hole
IRF3315PBF

IRF3315PBF

MOSFET N-CH 150V 23A TO220AB

International Rectifier
2,027 -

RFQ

IRF3315PBF

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 150 V 23A (Tc) - 70mOhm @ 12A, 10V 4V @ 250µA 95 nC @ 10 V ±20V 1300 pF @ 25 V - 94W (Tc) -55°C ~ 175°C (TJ) Through Hole
1500+
1500+ Média diária de RFQ
20,000.000
20,000.000 Unidade padrão do produto
1800+
1800+ Fabricantes em todo o mundo
15,000+
15,000+ Armazém em estoque
Fudong Communication (Shenzhen) Grupo Co., Ltd.

Início

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Produto

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Telefone

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Usuário