Transistores - FETs, MOSFETs - Único

Foto: Número da peça do fabricante Disponibilidade Preço Quantidade Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
HUF75639S3STNL

HUF75639S3STNL

56A, 100V, 0.025OHM, N-CHANNEL P

Fairchild Semiconductor
3,463 -

RFQ

HUF75639S3STNL

Ficha técnica

Bulk UltraFET™ Active N-Channel MOSFET (Metal Oxide) 100 V 56A (Tc) 10V 25mOhm @ 56A, 10V 4V @ 250µA 130 nC @ 20 V ±20V 2000 pF @ 25 V - 200W (Tc) -55°C ~ 175°C (TJ) Surface Mount
FQP13N50C-G

FQP13N50C-G

N-CHANNEL QFET MOSFET 500V, 13A

onsemi
2,573 -

RFQ

Tube QFET® Active N-Channel MOSFET (Metal Oxide) 500 V 13A (Tc) 10V 480mOhm @ 6.5A, 10V 4V @ 250µA 56 nC @ 10 V ±30V 2055 pF @ 25 V - 195W (Tc) -55°C ~ 150°C (TJ)
IPB080N06N G

IPB080N06N G

MOSFET N-CH 60V 80A TO263-3

Infineon Technologies
3,843 -

RFQ

IPB080N06N G

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 60 V 80A (Tc) 10V 7.7mOhm @ 80A, 10V 4V @ 150µA 93 nC @ 10 V ±20V 3500 pF @ 30 V - 214W (Tc) -55°C ~ 175°C (TJ) Surface Mount
SP000660618

SP000660618

IPI60R190C6XKSA1 - COOLMOS N-CHA

Infineon Technologies
2,473 -

RFQ

SP000660618

Ficha técnica

Bulk CoolMOS™ Active N-Channel MOSFET (Metal Oxide) 600 V 20.2A (Tc) 10V 190mOhm @ 9.5A, 10V 3.5V @ 630µA 63 nC @ 10 V ±20V 1400 pF @ 100 V - 151W (Tc) -55°C ~ 150°C (TJ) Through Hole
RFP50N06_F102

RFP50N06_F102

1-ELEMENT, N-CHANNEL POWER MOSFE

Fairchild Semiconductor
2,649 -

RFQ

RFP50N06_F102

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 60 V 50A (Tc) 10V 22mOhm @ 50A, 10V 4V @ 250µA 150 nC @ 20 V ±20V 2020 pF @ 25 V - 131W (Tc) -55°C ~ 175°C (TJ) Through Hole
PMDPB70XPE

PMDPB70XPE

NOW NEXPERIA PMDPB70XPE - SMALL

NXP USA Inc.
3,826 -

RFQ

PMDPB70XPE

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
IPD75N04S4-06

IPD75N04S4-06

IPD75N04 - 20V-40V N-CHANNEL AUT

Infineon Technologies
3,183 -

RFQ

IPD75N04S4-06

Ficha técnica

Bulk OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 40 V 75A (Tc) 10V 5.9mOhm @ 75A, 10V 4V @ 26µA 32 nC @ 10 V ±20V 2550 pF @ 25 V - 58W (Tc) -55°C ~ 175°C (TJ) Surface Mount
FDD4N60NZ

FDD4N60NZ

POWER FIELD-EFFECT TRANSISTOR, 3

Fairchild Semiconductor
2,437 -

RFQ

Bulk UniFET-II™ Active N-Channel MOSFET (Metal Oxide) 600 V 3.4A (Tc) 10V 2.5Ohm @ 1.7A, 10V 5V @ 250µA 10.8 nC @ 10 V ±25V 510 pF @ 25 V - 114W (Tc) -55°C ~ 150°C (TJ) Surface Mount
FDP3651U

FDP3651U

POWER FIELD-EFFECT TRANSISTOR, 8

Fairchild Semiconductor
2,638 -

RFQ

FDP3651U

Ficha técnica

Bulk PowerTrench® Active N-Channel MOSFET (Metal Oxide) 100 V 80A (Tc) 10V 18mOhm @ 80A, 10V 5.5V @ 250µA 69 nC @ 10 V ±20V 5522 pF @ 25 V - 255W (Tc) -55°C ~ 175°C (TJ) Through Hole
AUIRFS8407

AUIRFS8407

AUIRFS8407 - 20V-40V N-CHANNEL A

International Rectifier
3,875 -

RFQ

AUIRFS8407

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 40 V 195A (Tc) 10V 1.8mOhm @ 100A, 10V 4V @ 150µA 225 nC @ 10 V ±20V 7330 pF @ 25 V - 230W (Tc) -55°C ~ 175°C (TJ) Surface Mount
AUIRFZ44ZS

AUIRFZ44ZS

MOSFET N-CH 55V 51A D2PAK

International Rectifier
3,465 -

RFQ

AUIRFZ44ZS

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 55 V 51A (Tc) 10V 13.9mOhm @ 31A, 10V 4V @ 250µA 43 nC @ 10 V ±20V 1420 pF @ 25 V - 80W (Tc) -55°C ~ 175°C (TJ) Surface Mount
BSZ050N03MSG

BSZ050N03MSG

BSZ050N03 - 12V-300V N-CHANNEL P

Infineon Technologies
3,697 -

RFQ

BSZ050N03MSG

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
BUK6C3R3-75C,118

BUK6C3R3-75C,118

MOSFET N-CH 75V 181A D2PAK

NXP USA Inc.
2,092 -

RFQ

BUK6C3R3-75C,118

Ficha técnica

Bulk Automotive, AEC-Q101, TrenchMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 75 V 181A (Tc) 10V 3.4mOhm @ 90A, 10V 2.8V @ 1mA 253 nC @ 10 V ±16V 15800 pF @ 25 V - 300W (Tc) -55°C ~ 175°C (TJ) Surface Mount
AUIRF7738L2TR

AUIRF7738L2TR

MOSFET N-CH 40V 35A/130A DIRECT

International Rectifier
3,370 -

RFQ

AUIRF7738L2TR

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 40 V 35A (Ta), 130A (Tc) 10V 1.6mOhm @ 109A, 10V 4V @ 250µA 194 nC @ 10 V ±20V 7471 pF @ 25 V - 3.3W (Ta), 94W (Tc) -55°C ~ 175°C (TJ) Surface Mount
ISL9N312AD3STNL

ISL9N312AD3STNL

MOSFET N-CH 30V 50A TO252AA

Fairchild Semiconductor
2,574 -

RFQ

ISL9N312AD3STNL

Ficha técnica

Bulk UltraFET™ Active N-Channel MOSFET (Metal Oxide) 30 V 50A (Tc) - 12mOhm @ 50A, 10V 3V @ 250µA 38 nC @ 10 V ±20V 1450 pF @ 15 V - 75W (Ta) -55°C ~ 175°C (TJ) Surface Mount
IRFR13N15DPBF

IRFR13N15DPBF

MOSFET N-CH 150V 14A DPAK

International Rectifier
2,758 -

RFQ

IRFR13N15DPBF

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 150 V 14A (Tc) 10V 180mOhm @ 8.3A, 10V 5.5V @ 250µA 29 nC @ 10 V ±30V 620 pF @ 25 V - 86W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFR8314TRPBF

IRFR8314TRPBF

IRFR8314 - 12V-300V N-CHANNEL PO

International Rectifier
2,068 -

RFQ

IRFR8314TRPBF

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 30 V 90A (Tc) 4.5V, 10V 2.2mOhm @ 90A, 10V 2.2V @ 100µA 54 nC @ 4.5 V ±20V 4945 pF @ 15 V - 125W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFS3806PBF

IRFS3806PBF

MOSFET N-CH 60V 43A D2PAK

International Rectifier
2,065 -

RFQ

IRFS3806PBF

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 60 V 43A (Tc) 10V 15.8mOhm @ 25A, 10V 4V @ 50µA 30 nC @ 10 V ±20V 1150 pF @ 50 V - 71W (Tc) -55°C ~ 175°C (TJ) Surface Mount
FDMA291P

FDMA291P

SMALL SIGNAL FIELD-EFFECT TRANSI

Fairchild Semiconductor
2,124 -

RFQ

FDMA291P

Ficha técnica

Bulk PowerTrench® Active P-Channel MOSFET (Metal Oxide) 20 V 6.6A (Ta) 1.8V, 4.5V 42mOhm @ 6.6A, 4.5V 1V @ 250µA 14 nC @ 4.5 V ±8V 1000 pF @ 10 V - 2.4W (Ta) -55°C ~ 150°C (TJ) Surface Mount
FDS5670

FDS5670

SMALL SIGNAL FIELD-EFFECT TRANSI

Fairchild Semiconductor
2,425 -

RFQ

FDS5670

Ficha técnica

Bulk PowerTrench® Active N-Channel MOSFET (Metal Oxide) 60 V 10A (Ta) 6V, 10V 14mOhm @ 10A, 10V 4V @ 250µA 70 nC @ 10 V ±20V 2900 pF @ 15 V - 2.5W (Ta) -55°C ~ 150°C (TJ) Surface Mount
1500+
1500+ Média diária de RFQ
20,000.000
20,000.000 Unidade padrão do produto
1800+
1800+ Fabricantes em todo o mundo
15,000+
15,000+ Armazém em estoque
Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

Telefone

Fudong Communication (Shenzhen) Grupo Co., Ltd.

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