Transistores - FETs, MOSFETs - Único

Foto: Número da peça do fabricante Disponibilidade Preço Quantidade Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
FDB52N20TM

FDB52N20TM

POWER FIELD-EFFECT TRANSISTOR, 5

Fairchild Semiconductor
3,757 -

RFQ

FDB52N20TM

Ficha técnica

Bulk UniFET™ Active N-Channel MOSFET (Metal Oxide) 200 V 52A (Tc) 10V 49mOhm @ 26A, 10V 5V @ 250µA 63 nC @ 10 V ±30V 2900 pF @ 25 V - 357W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRFR7440TRPBF

IRFR7440TRPBF

IRFR7440 - 12V-300V N-CHANNEL PO

International Rectifier
3,094 -

RFQ

IRFR7440TRPBF

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 40 V 90A (Tc) 6V, 10V 2.4mOhm @ 90A, 10V 3.9V @ 100µA 134 nC @ 10 V ±20V 4610 pF @ 25 V - 140W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFS7434-7PPBF

IRFS7434-7PPBF

MOSFET N-CH 40V 240A D2PAK

International Rectifier
2,198 -

RFQ

IRFS7434-7PPBF

Ficha técnica

Bulk HEXFET®, StrongIRFET™ Active N-Channel MOSFET (Metal Oxide) 40 V 240A (Tc) 6V, 10V 1mOhm @ 100A, 10V 3.9V @ 250µA 315 nC @ 10 V ±20V 10250 pF @ 25 V - 245W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRFSL7434PBF

IRFSL7434PBF

MOSFET N-CH 40V 195A TO262

International Rectifier
3,710 -

RFQ

IRFSL7434PBF

Ficha técnica

Bulk HEXFET®, StrongIRFET™ Active N-Channel MOSFET (Metal Oxide) 40 V 195A (Tc) 6V, 10V 1.6mOhm @ 100A, 10V 3.9V @ 250µA 324 nC @ 10 V ±20V 10820 pF @ 25 V - 294W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRFZ34NSTRRPBF

IRFZ34NSTRRPBF

MOSFET N-CH 55V 29A D2PAK

International Rectifier
3,954 -

RFQ

IRFZ34NSTRRPBF

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 55 V 29A (Tc) 10V 40mOhm @ 16A, 10V 4V @ 250µA 34 nC @ 10 V ±20V 700 pF @ 25 V - 3.8W (Ta), 68W (Tc) -55°C ~ 175°C (TJ) Surface Mount
FDS86267P

FDS86267P

SMALL SIGNAL FIELD-EFFECT TRANSI

Fairchild Semiconductor
2,641 -

RFQ

FDS86267P

Ficha técnica

Bulk PowerTrench® Active P-Channel MOSFET (Metal Oxide) 150 V 2.2A (Ta) 6V, 10V 255mOhm @ 2.2A, 10V 4V @ 250µA 16 nC @ 10 V ±25V 1130 pF @ 75 V - 1W (Ta) -55°C ~ 150°C (TJ) Surface Mount
FDS9431A

FDS9431A

P-CHANNEL 2.5V SPECIFIED MOSFET

Fairchild Semiconductor
3,344 -

RFQ

FDS9431A

Ficha técnica

Bulk - Active P-Channel MOSFET (Metal Oxide) 20 V 3.5A (Ta) 2.5V, 4.5V 130mOhm @ 3.5A, 4.5V 1V @ 250µA 8.5 nC @ 4.5 V ±8V 405 pF @ 10 V - 2.5W (Ta) -55°C ~ 150°C (TJ) Surface Mount
MIC94030YM4

MIC94030YM4

TINYFET P-CHANNEL MOSFET

Micrel Inc.
2,795 -

RFQ

MIC94030YM4

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
FDT3612

FDT3612

POWER FIELD-EFFECT TRANSISTOR, 3

Fairchild Semiconductor
3,942 -

RFQ

Bulk PowerTrench® Active N-Channel MOSFET (Metal Oxide) 100 V 3.7A (Ta) 6V, 10V 120mOhm @ 3.7A, 10V 4V @ 250µA 20 nC @ 10 V ±20V 632 pF @ 50 V - 3W (Ta) -55°C ~ 150°C (TJ) Surface Mount
FQP20N06L

FQP20N06L

POWER FIELD-EFFECT TRANSISTOR, 2

Fairchild Semiconductor
3,327 -

RFQ

Bulk QFET® Active N-Channel MOSFET (Metal Oxide) 60 V 21A (Tc) 5V, 10V 55mOhm @ 10.5A, 10V 2.5V @ 250µA 13 nC @ 5 V ±20V 630 pF @ 25 V - 53W (Tc) -55°C ~ 175°C (TJ) Through Hole
NX2301P,215

NX2301P,215

20 V, 2 A P-CHANNEL TRENCH MOSFE

NXP Semiconductors
2,808 -

RFQ

NX2301P,215

Ficha técnica

Bulk Automotive, AEC-Q101, TrenchMOS™ Active P-Channel MOSFET (Metal Oxide) 20 V 2A (Ta) 2.5V, 4.5V 120mOhm @ 1A, 4.5V 1.1V @ 250µA 6 nC @ 4.5 V ±8V 380 pF @ 6 V - 400mW (Ta), 2.8W (Tc) 150°C (TJ) Surface Mount
NP60N055VUK-E1-AY

NP60N055VUK-E1-AY

MOSFET N-CH 55V 60A TO252-3

Renesas Electronics America Inc
2,061 -

RFQ

NP60N055VUK-E1-AY

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 55 V 60A (Tc) 10V 5.5mOhm @ 30A, 10V 4V @ 253µA 63 nC @ 10 V ±20V 3750 pF @ 25 V - 1.2W (Ta), 105W (Tc) 175°C (TJ) Surface Mount
NX138BKR

NX138BKR

NX138BK - 60 V, SINGLE N-CHANNEL

NXP USA Inc.
3,879 -

RFQ

NX138BKR

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 60 V 265mA (Ta) 2.5V, 10V 3.5Ohm @ 200mA, 10V 1.5V @ 250µA 0.49 nC @ 4.5 V ±20V 20.2 pF @ 30 V - 310mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
IRLML0060TRPBF

IRLML0060TRPBF

IRLML0060 - 20V-100V N-CHANNEL S

International Rectifier
3,212 -

RFQ

IRLML0060TRPBF

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 60 V 2.7A (Ta) 4.5V, 10V 92mOhm @ 2.7A, 10V 2.5V @ 25µA 2.5 nC @ 4.5 V ±16V 290 pF @ 25 V - 1.25W (Ta) -55°C ~ 150°C (TJ) Surface Mount
PSMN025-80YLX

PSMN025-80YLX

PSMN025-80YL - N-CHANNEL 80V, LO

NXP USA Inc.
2,421 -

RFQ

PSMN025-80YLX

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 80 V 37A (Tc) 5V, 10V 25mOhm @ 10A, 10V 2.1V @ 1mA 17.1 nC @ 5 V ±20V 2703 pF @ 25 V - 95W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRLZ24NSPBF

IRLZ24NSPBF

MOSFET N-CH 55V 18A D2PAK

International Rectifier
2,472 -

RFQ

IRLZ24NSPBF

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 55 V 18A (Tc) 4V, 10V 60mOhm @ 11A, 10V 2V @ 250µA 15 nC @ 5 V ±16V 480 pF @ 25 V - 3.8W (Ta), 45W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPP60R190C6

IPP60R190C6

POWER FIELD-EFFECT TRANSISTOR, 2

Infineon Technologies
3,096 -

RFQ

IPP60R190C6

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
PMPB48EP,115

PMPB48EP,115

MOSFET P-CH 30V 4.7A DFN2020MD-6

NXP USA Inc.
2,065 -

RFQ

PMPB48EP,115

Ficha técnica

Bulk - Active P-Channel MOSFET (Metal Oxide) 30 V 4.7A (Ta) 4.5V, 10V 50mOhm @ 4.7A, 10V 2.5V @ 250µA 26 nC @ 10 V ±20V 860 pF @ 15 V - 1.7W (Ta), 12.5W (Tc) -55°C ~ 150°C (TJ) Surface Mount
MIC94030YM4TR

MIC94030YM4TR

MOSFET P-CH 16V 1A SOT143

Microchip Technology
3,038 -

RFQ

MIC94030YM4TR

Ficha técnica

Bulk - Active P-Channel MOSFET (Metal Oxide) 16 V 1A (Ta) - 450mOhm @ 100mA, 10V 1.4V @ 250µA - ±16V 100 pF @ 12 V - 568mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
FDMS86320

FDMS86320

POWER FIELD-EFFECT TRANSISTOR, 1

Fairchild Semiconductor
2,992 -

RFQ

FDMS86320

Ficha técnica

Bulk PowerTrench® Active N-Channel MOSFET (Metal Oxide) 80 V 10.5A (Ta), 22A (Tc) 8V, 10V 11.7mOhm @ 10.5A, 10V 4.5V @ 250µA 41 nC @ 10 V ±20V 2640 pF @ 40 V - 2.5W (Ta), 69W (Tc) -55°C ~ 150°C (TJ) Surface Mount
1500+
1500+ Média diária de RFQ
20,000.000
20,000.000 Unidade padrão do produto
1800+
1800+ Fabricantes em todo o mundo
15,000+
15,000+ Armazém em estoque
Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

Produto

Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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