Transistores - FETs, MOSFETs - Único

Foto: Número da peça do fabricante Disponibilidade Preço Quantidade Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
PSMN014-80YLX

PSMN014-80YLX

PSMN014-80YL - N-CHANNEL 80V, 14

NXP USA Inc.
3,978 -

RFQ

PSMN014-80YLX

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 80 V 62A (Tc) 5V, 10V 14mOhm @ 15A, 10V 2.1V @ 1mA 28.9 nC @ 5 V ±20V 4640 pF @ 25 V - 147W (Tc) -55°C ~ 175°C (TJ) Surface Mount
PSMN2R1-40PLQ

PSMN2R1-40PLQ

MOSFET N-CH 40V 150A TO220AB

NXP USA Inc.
2,939 -

RFQ

PSMN2R1-40PLQ

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 40 V 150A (Tc) 10V 2.2mOhm @ 25A, 10V 2.1V @ 1mA 87.8 nC @ 5 V ±20V 9584 pF @ 25 V - 293W (Tc) -55°C ~ 175°C (TJ) Through Hole
FQP20N06

FQP20N06

POWER FIELD-EFFECT TRANSISTOR, 2

Fairchild Semiconductor
2,759 -

RFQ

Bulk QFET® Active N-Channel MOSFET (Metal Oxide) 60 V 20A (Tc) 10V 60mOhm @ 10A, 10V 4V @ 250µA 15 nC @ 10 V ±25V 590 pF @ 25 V - 53W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRLR2705TRPBF

IRLR2705TRPBF

IRLR2705 - 12V-300V N-CHANNEL PO

International Rectifier
2,981 -

RFQ

IRLR2705TRPBF

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 55 V 28A (Tc) 4V, 10V 40mOhm @ 17A, 10V 2V @ 250µA 25 nC @ 5 V ±16V 880 pF @ 25 V - 68W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRLR3110ZTRPBF

IRLR3110ZTRPBF

IRLR3110 - 12V-300V N-CHANNEL PO

International Rectifier
2,625 -

RFQ

IRLR3110ZTRPBF

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 100 V 42A (Tc) 4.5V, 10V 14mOhm @ 38A, 10V 2.5V @ 100µA 48 nC @ 4.5 V ±16V 3980 pF @ 25 V - 140W (Tc) -55°C ~ 175°C (TJ) Surface Mount
PSMN004-60B,118

PSMN004-60B,118

MOSFET N-CH 60V 75A D2PAK

NXP USA Inc.
2,184 -

RFQ

PSMN004-60B,118

Ficha técnica

Bulk TrenchMOS™ Active N-Channel MOSFET (Metal Oxide) 60 V 75A (Tc) 10V 3.6mOhm @ 25A, 10V 4V @ 1mA 168 nC @ 10 V ±20V 8300 pF @ 25 V - 230W (Tc) -55°C ~ 175°C (TJ) Surface Mount
AUIRL7732S2TR

AUIRL7732S2TR

MOSFET N-CH 40V 14A DIRECTFET SC

International Rectifier
3,044 -

RFQ

AUIRL7732S2TR

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 40 V 14A (Ta) 4.5V, 10V 6.6mOhm @ 35A, 10V 2.5V @ 50µA 33 nC @ 4.5 V ±16V 2020 pF @ 25 V - 2.2W (Ta), 41W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPP65R280C6

IPP65R280C6

POWER FIELD-EFFECT TRANSISTOR, 6

Infineon Technologies
2,669 -

RFQ

IPP65R280C6

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
IPP80R900P7

IPP80R900P7

IPP80R900 - 800V COOLMOS N-CHANN

Infineon Technologies
2,213 -

RFQ

IPP80R900P7

Ficha técnica

Bulk - Active - - - - - - - - - - - - - -
IPB180N03S4L-01

IPB180N03S4L-01

IPB180N03 - 20V-40V N-CHANNEL AU

Infineon Technologies
3,056 -

RFQ

IPB180N03S4L-01

Ficha técnica

Bulk CoolMOS™ Active N-Channel MOSFET (Metal Oxide) 30 V 180A (Tc) 4.5V, 10V 1.05mOhm @ 100A, 10V 2.2V @ 140µA 239 nC @ 10 V ±16V 17600 pF @ 25 V - 188W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFB3006GPBF

IRFB3006GPBF

MOSFET N-CH 60V 195A TO220AB

International Rectifier
2,644 -

RFQ

IRFB3006GPBF

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 60 V 195A (Tc) 10V 2.5mOhm @ 170A, 10V 4V @ 250µA 300 nC @ 10 V ±20V 8970 pF @ 50 V - 375W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPW60R099C7

IPW60R099C7

MOSFET N-CH 600V 22A TO247

Infineon Technologies
2,051 -

RFQ

IPW60R099C7

Ficha técnica

Bulk CoolMOS™ C7 Active N-Channel MOSFET (Metal Oxide) 600 V 22A (Tc) - 99mOhm @ 9.7A, 10V 4V @ 490µA 42 nC @ 10 V ±20V 1819 pF @ 400 V - 110W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPW60R199CP

IPW60R199CP

16A, 600V, 0.199OHM, N-CHANNEL M

Infineon Technologies
2,324 -

RFQ

IPW60R199CP

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
BUK7Y29-40EX

BUK7Y29-40EX

MOSFET N-CH 40V 26A LFPAK56

NXP USA Inc.
3,466 -

RFQ

BUK7Y29-40EX

Ficha técnica

Bulk TrenchMOS™ Active N-Channel MOSFET (Metal Oxide) 40 V 26A (Tc) 10V 29mOhm @ 5A, 10V 4V @ 1mA 7.9 nC @ 10 V ±20V 492 pF @ 25 V - 37W (Tc) -55°C ~ 175°C (TJ) Surface Mount
AUIRFS3004

AUIRFS3004

MOSFET N-CH 40V 195A D2PAK-3

International Rectifier
2,357 -

RFQ

AUIRFS3004

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 40 V 195A (Tc) 10V 1.75mOhm @ 195A, 10V 4V @ 250µA 240 nC @ 10 V ±20V 9200 pF @ 25 V - 380W (Tc) -55°C ~ 175°C (TJ) Surface Mount
BUK7Y28-75B,115

BUK7Y28-75B,115

TRANSISTOR >30MHZ

NXP USA Inc.
3,386 -

RFQ

BUK7Y28-75B,115

Ficha técnica

Bulk Automotive, AEC-Q101, TrenchMOS™ Active N-Channel MOSFET (Metal Oxide) 75 V 35.5A (Tc) 10V 28mOhm @ 15A, 10V 4V @ 1mA 21.2 nC @ 10 V ±20V 1417 pF @ 25 V - 85W (Tc) -55°C ~ 175°C (TJ) Surface Mount
BSS123L

BSS123L

SMALL SIGNAL FIELD-EFFECT TRANSI

Fairchild Semiconductor
3,860 -

RFQ

BSS123L

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 100 V 170mA (Ta) 4.5V, 10V 6Ohm @ 170mA, 10V 2V @ 1mA 2.5 nC @ 10 V ±20V 21.5 pF @ 25 V - 360mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
SPD18P06PG

SPD18P06PG

SPD18P06 - 20V-250V P-CHANNEL PO

Infineon Technologies
3,142 -

RFQ

SPD18P06PG

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
SPW52N50C3XK

SPW52N50C3XK

SPW52N50 - 500V COOLMOS N-CHANNE

Infineon Technologies
2,131 -

RFQ

Bulk * Active - - - - - - - - - - - - - -
BUK98150-55A/CU,135

BUK98150-55A/CU,135

NOW NEXPERIA BUK98150-55A - POWE

Nexperia USA Inc.
3,230 -

RFQ

BUK98150-55A/CU,135

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
1500+
1500+ Média diária de RFQ
20,000.000
20,000.000 Unidade padrão do produto
1800+
1800+ Fabricantes em todo o mundo
15,000+
15,000+ Armazém em estoque
Fudong Communication (Shenzhen) Grupo Co., Ltd.

Início

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Produto

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Telefone

Fudong Communication (Shenzhen) Grupo Co., Ltd.

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