Transistores - FETs, MOSFETs - Único

Foto: Número da peça do fabricante Disponibilidade Preço Quantidade Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
FDB070AN06A0

FDB070AN06A0

POWER FIELD-EFFECT TRANSISTOR, 1

Fairchild Semiconductor
2,881 -

RFQ

FDB070AN06A0

Ficha técnica

Bulk PowerTrench® Active N-Channel MOSFET (Metal Oxide) 60 V 15A (Ta), 80A (Tc) 10V 7mOhm @ 80A, 10V 4V @ 250µA 66 nC @ 10 V ±20V 3000 pF @ 25 V - 175W (Tc) -55°C ~ 175°C (TJ) Surface Mount
BUK768R1-100E,118

BUK768R1-100E,118

NOW NEXPERIA BUK768R1-100E - 100

NXP USA Inc.
2,966 -

RFQ

BUK768R1-100E,118

Ficha técnica

Bulk Automotive, AEC-Q101, TrenchMOS™ Active N-Channel MOSFET (Metal Oxide) 100 V 100A (Tc) 10V 8.1mOhm @ 25A, 10V 4V @ 1mA 108 nC @ 10 V ±20V 7380 pF @ 25 V - 263W (Tc) -55°C ~ 175°C (TJ) Surface Mount
FDP8N50NZ

FDP8N50NZ

POWER FIELD-EFFECT TRANSISTOR, 8

Fairchild Semiconductor
2,187 -

RFQ

FDP8N50NZ

Ficha técnica

Bulk UniFET™ Active N-Channel MOSFET (Metal Oxide) 500 V 8A (Tc) 10V 850mOhm @ 4A, 10V 5V @ 250µA 18 nC @ 10 V ±25V 735 pF @ 25 V - 130W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPD30N06S2L-23

IPD30N06S2L-23

IPD30N06 - 55V-60V N-CHANNEL AUT

Infineon Technologies
2,039 -

RFQ

IPD30N06S2L-23

Ficha técnica

Bulk OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 55 V 30A (Tc) 4.5V, 10V 23mOhm @ 22A, 10V 2V @ 50µA 42 nC @ 10 V ±20V 1091 pF @ 25 V - 100W (Tc) -55°C ~ 175°C (TJ) Surface Mount
FCP850N80Z

FCP850N80Z

MOSFET N-CH 800V 8A TO220-3

Fairchild Semiconductor
3,631 -

RFQ

FCP850N80Z

Ficha técnica

Bulk SuperFET® II Active N-Channel MOSFET (Metal Oxide) 800 V 8A (Tc) 10V 850mOhm @ 3A, 10V 4.5V @ 600µA 29 nC @ 10 V ±20V 1315 pF @ 100 V - 136W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPD50N03S2-07

IPD50N03S2-07

OPTLMOS N-CHANNEL POWER MOSFET

Infineon Technologies
2,041 -

RFQ

IPD50N03S2-07

Ficha técnica

Bulk OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 30 V 50A (Tc) 10V 7.3mOhm @ 50A, 10V 4V @ 85µA 68 nC @ 10 V ±20V 2000 pF @ 25 V - 136W (Tc) -55°C ~ 175°C (TJ) Surface Mount
BUK9615-100E,118

BUK9615-100E,118

MOSFET N-CH 100V 66A D2PAK

NXP USA Inc.
3,312 -

RFQ

BUK9615-100E,118

Ficha técnica

Bulk Automotive, AEC-Q101, TrenchMOS™ Active N-Channel MOSFET (Metal Oxide) 100 V 66A (Tc) 5V, 10V 14mOhm @ 15A, 10V 2.1V @ 1mA 60 nC @ 5 V ±10V 6813 pF @ 25 V - 182W (Tc) -55°C ~ 175°C (TJ) Surface Mount
FDA38N30

FDA38N30

POWER FIELD-EFFECT TRANSISTOR, 3

Fairchild Semiconductor
2,436 -

RFQ

FDA38N30

Ficha técnica

Bulk UniFET™ Active N-Channel MOSFET (Metal Oxide) 300 V 38A (Tc) 10V 85mOhm @ 19A, 10V 5V @ 250µA 60 nC @ 10 V ±30V 2600 pF @ 25 V - 312W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFB3207ZPBF

IRFB3207ZPBF

IRFB3207 - 12V-300V N-CHANNEL PO

International Rectifier
2,246 -

RFQ

IRFB3207ZPBF

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 75 V 120A (Tc) 10V 4.1mOhm @ 75A, 10V 4V @ 150µA 170 nC @ 10 V ±20V 6920 pF @ 50 V - 300W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRFB4410ZGPBF

IRFB4410ZGPBF

IRFB4410 - 12V-300V N-CHANNEL PO

International Rectifier
3,919 -

RFQ

IRFB4410ZGPBF

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 100 V 97A (Tc) 10V 9mOhm @ 58A, 10V 4V @ 150µA 120 nC @ 10 V ±20V 4820 pF @ 50 V - 230W (Tc) -55°C ~ 175°C (TJ) Through Hole
FQU1N80TU

FQU1N80TU

MOSFET N-CH 800V 1A I-PAK

Fairchild Semiconductor
2,858 -

RFQ

FQU1N80TU

Ficha técnica

Bulk QFET® Active N-Channel MOSFET (Metal Oxide) 800 V 1A (Tc) 10V 20Ohm @ 500mA, 10V 5V @ 250µA 7.2 nC @ 10 V ±30V 195 pF @ 25 V - 2.5W (Ta), 45W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFS4115-7PPBF

IRFS4115-7PPBF

MOSFET N-CH 150V 105A D2PAK

International Rectifier
2,533 -

RFQ

IRFS4115-7PPBF

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 150 V 105A (Tc) 10V 11.8mOhm @ 63A, 10V 5V @ 250µA 110 nC @ 10 V ±20V 5320 pF @ 50 V - 380W (Tc) -55°C ~ 175°C (TJ) Surface Mount
FQT3P20TF_SB82100

FQT3P20TF_SB82100

1-ELEMENT, P-CHANNEL POWER MOSFE

Fairchild Semiconductor
2,089 -

RFQ

FQT3P20TF_SB82100

Ficha técnica

Bulk QFET® Active P-Channel MOSFET (Metal Oxide) 200 V 670mA (Tc) 10V 2.7Ohm @ 335mA, 10V 5V @ 250µA 8 nC @ 10 V ±30V 250 pF @ 25 V - 2.5W (Tc) -55°C ~ 150°C (TJ) Surface Mount
2N7002CK

2N7002CK

2N7002 - SMALL SIGNAL FIELD-EFFE

Nexperia USA Inc.
2,848 -

RFQ

2N7002CK

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
IRFB31N20DPBF

IRFB31N20DPBF

MOSFET N-CH 200V 31A TO220AB

International Rectifier
3,972 -

RFQ

IRFB31N20DPBF

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 200 V 31A (Tc) 10V 82mOhm @ 18A, 10V 5.5V @ 250µA 107 nC @ 10 V ±30V 2370 pF @ 25 V - 3.1W (Ta), 200W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRFB4321PBF

IRFB4321PBF

IRFB4321 - 12V-300V N-CHANNEL PO

International Rectifier
3,315 -

RFQ

IRFB4321PBF

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 150 V 85A (Tc) 10V 15mOhm @ 33A, 10V 5V @ 250µA 110 nC @ 10 V ±30V 4460 pF @ 50 V - 350W (Tc) -55°C ~ 175°C (TJ) Through Hole
FDB045AN08A0

FDB045AN08A0

POWER FIELD-EFFECT TRANSISTOR, 1

Fairchild Semiconductor
2,660 -

RFQ

FDB045AN08A0

Ficha técnica

Bulk PowerTrench® Active N-Channel MOSFET (Metal Oxide) 75 V 19A (Ta), 90A (Tc) 6V, 10V 4.5mOhm @ 80A, 10V 4V @ 250µA 138 nC @ 10 V ±20V 6600 pF @ 25 V - 310W (Tc) -55°C ~ 175°C (TJ) Surface Mount
FDPF17N60NT

FDPF17N60NT

MOSFET N-CH 600V 17A TO220F

Fairchild Semiconductor
3,357 -

RFQ

FDPF17N60NT

Ficha técnica

Bulk UniFET™ Active N-Channel MOSFET (Metal Oxide) 600 V 17A (Tc) 10V 340mOhm @ 8.5A, 10V 5V @ 250µA 65 nC @ 10 V ±30V 3040 pF @ 25 V - 62.5W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFH3707TRPBF

IRFH3707TRPBF

IRFH3707 - 12V-300V N-CHANNEL PO

International Rectifier
2,802 -

RFQ

IRFH3707TRPBF

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 30 V 12A (Ta), 29A (Tc) 4.5V, 10V 12.4mOhm @ 12A, 10V 2.35V @ 25µA 8.1 nC @ 4.5 V ±20V 755 pF @ 15 V - 2.8W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IRFR3711ZTRPBF

IRFR3711ZTRPBF

IRFR3711 - 12V-300V N-CHANNEL PO

International Rectifier
3,940 -

RFQ

IRFR3711ZTRPBF

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 20 V 93A (Tc) 4.5V, 10V 5.7mOhm @ 15A, 10V 2.45V @ 250µA 27 nC @ 4.5 V ±20V 2160 pF @ 10 V - 79W (Tc) -55°C ~ 175°C (TJ) Surface Mount
1500+
1500+ Média diária de RFQ
20,000.000
20,000.000 Unidade padrão do produto
1800+
1800+ Fabricantes em todo o mundo
15,000+
15,000+ Armazém em estoque
Fudong Communication (Shenzhen) Grupo Co., Ltd.

Início

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Produto

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Telefone

Fudong Communication (Shenzhen) Grupo Co., Ltd.

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