Transistores - FETs, MOSFETs - Único

Foto: Número da peça do fabricante Disponibilidade Preço Quantidade Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IPP60R380C6

IPP60R380C6

POWER FIELD-EFFECT TRANSISTOR, 1

Infineon Technologies
3,235 -

RFQ

IPP60R380C6

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
IPP65R380E6

IPP65R380E6

IPP65R380E6 - 650V-700V COOLMOS

Infineon Technologies
3,972 -

RFQ

IPP65R380E6

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
FDPF20N50FT

FDPF20N50FT

POWER FIELD-EFFECT TRANSISTOR, 2

Fairchild Semiconductor
2,153 -

RFQ

FDPF20N50FT

Ficha técnica

Bulk UniFET™ Active N-Channel MOSFET (Metal Oxide) 500 V 20A (Tc) 10V 260mOhm @ 10A, 10V 5V @ 250µA 65 nC @ 10 V ±30V 3390 pF @ 25 V - 38.5W (Tc) -55°C ~ 150°C (TJ) Through Hole
FDS2672

FDS2672

POWER FIELD-EFFECT TRANSISTOR, 3

Fairchild Semiconductor
2,852 -

RFQ

FDS2672

Ficha técnica

Bulk UltraFET™ Active N-Channel MOSFET (Metal Oxide) 200 V 3.9A (Ta) 6V, 10V 70mOhm @ 3.9A, 10V 4V @ 250µA 46 nC @ 10 V ±20V 2535 pF @ 100 V - 2.5W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IRFS4620PBF

IRFS4620PBF

MOSFET N-CH 200V 24A D2PAK

International Rectifier
3,800 -

RFQ

IRFS4620PBF

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 200 V 24A (Tc) 10V 77.5mOhm @ 15A, 10V 5V @ 100µA 38 nC @ 10 V ±20V 1710 pF @ 50 V - 144W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFSL7534PBF

IRFSL7534PBF

MOSFET N-CH 60V 195A TO262

International Rectifier
2,443 -

RFQ

IRFSL7534PBF

Ficha técnica

Bulk HEXFET®, StrongIRFET™ Active N-Channel MOSFET (Metal Oxide) 60 V 195A (Tc) 6V, 10V 2.4mOhm @ 100A, 10V 3.7V @ 250µA 279 nC @ 10 V ±20V 10034 pF @ 25 V - 294W (Tc) -55°C ~ 175°C (TJ) Surface Mount
FDMC7572S

FDMC7572S

MOSFET N-CH 25V 22.5A/40A PWR33

Fairchild Semiconductor
2,816 -

RFQ

FDMC7572S

Ficha técnica

Bulk PowerTrench®, SyncFET™ Active N-Channel MOSFET (Metal Oxide) 25 V 22.5A (Ta), 40A (Tc) 4.5V, 10V 3.15mOhm @ 22.5A, 10V 3V @ 1mA 44 nC @ 10 V ±20V 2705 pF @ 13 V - 2.3W (Ta), 52W (Tc) -55°C ~ 150°C (TJ) Surface Mount
FDMS0310S

FDMS0310S

MOSFET N-CH 30V 19A/42A 8PQFN

Fairchild Semiconductor
2,749 -

RFQ

FDMS0310S

Ficha técnica

Bulk PowerTrench®, SyncFET™ Active N-Channel MOSFET (Metal Oxide) 30 V 19A (Ta), 42A (Tc) 4.5V, 10V 4mOhm @ 18A, 10V 3V @ 1mA 46 nC @ 10 V ±20V 2820 pF @ 15 V - 2.5W (Ta), 46W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IPA60R380C6

IPA60R380C6

600V COOLMOS POWER TRANSISTOR

Infineon Technologies
3,298 -

RFQ

IPA60R380C6

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
FQP32N20C

FQP32N20C

POWER FIELD-EFFECT TRANSISTOR, 2

Fairchild Semiconductor
2,244 -

RFQ

FQP32N20C

Ficha técnica

Bulk QFET® Active N-Channel MOSFET (Metal Oxide) 200 V 28A (Tc) 10V 82mOhm @ 14A, 10V 4V @ 250µA 110 nC @ 10 V ±30V 2200 pF @ 25 V - 156W (Tc) -55°C ~ 150°C (TJ) Through Hole
PMZB320UPE,315

PMZB320UPE,315

NOW NEXPERIA PMZB320UPE - SMALL

Nexperia USA Inc.
3,323 -

RFQ

PMZB320UPE,315

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
IPA80R310CE

IPA80R310CE

IPA80R310 - 800V COOLMOS N-CHANN

Infineon Technologies
3,886 -

RFQ

IPA80R310CE

Ficha técnica

Bulk CoolMOS™ Active N-Channel MOSFET (Metal Oxide) 800 V 16.7A (Tc) 10V 310mOhm @ 11A, 10V 3.9V @ 1mA 91 nC @ 10 V ±20V 2320 pF @ 100 V - 35W (Tc) -40°C ~ 150°C (TJ) Through Hole
IRLMS1503TRPBF

IRLMS1503TRPBF

IRLMS1503 - 12V-300V N-CHANNEL P

International Rectifier
3,462 -

RFQ

IRLMS1503TRPBF

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 30 V 3.2A (Ta) 4.5V, 10V 100mOhm @ 2.2A, 10V 1V @ 250µA 9.6 nC @ 10 V ±20V 210 pF @ 25 V - 1.7W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IRLS3036TRL7PP

IRLS3036TRL7PP

IRLS3036 - 12V-300V N-CHANNEL PO

International Rectifier
3,649 -

RFQ

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 60 V 240A (Tc) 4.5V, 10V 1.9mOhm @ 180A, 10V 2.5V @ 250µA 160 nC @ 4.5 V ±16V 11270 pF @ 50 V - 380W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRF6662TRPBF

IRF6662TRPBF

IRF6662 - 12V-300V N-CHANNEL POW

International Rectifier
3,858 -

RFQ

IRF6662TRPBF

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 100 V 8.3A (Ta), 47A (Tc) 10V 22mOhm @ 8.2A, 10V 4.9V @ 100µA 31 nC @ 10 V ±20V 1360 pF @ 25 V - 2.8W (Ta), 89W (Tc) -40°C ~ 150°C (TJ) Surface Mount
IPB031NE7N3G

IPB031NE7N3G

IPB031NE7 - 12V-300V N-CHANNEL P

Infineon Technologies
2,346 -

RFQ

IPB031NE7N3G

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
FQPF4N90CT

FQPF4N90CT

MOSFET N-CH 900V 4A TO220F

Fairchild Semiconductor
2,154 -

RFQ

FQPF4N90CT

Ficha técnica

Bulk QFET® Active N-Channel MOSFET (Metal Oxide) 900 V 4A (Tc) 10V 4.2Ohm @ 2A, 10V 5V @ 250µA 22 nC @ 10 V ±30V 960 pF @ 25 V - 47W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPP126N10N3G

IPP126N10N3G

MOSFET N-CH 100V 58A TO220-3

Infineon Technologies
3,735 -

RFQ

IPP126N10N3G

Ficha técnica

Bulk OptiMOS™ 3 Active N-Channel MOSFET (Metal Oxide) 100 V 58A (Tc) - 12.6mOhm @ 46A, 10V 3.5V @ 46µA 35 nC @ 10 V ±20V 2500 pF @ 50 V - 94W (Tc) -55°C ~ 175°C (TJ) Through Hole
PMCPB5530X

PMCPB5530X

NOW NEXPERIA PMCPB5530X - SMALL

NXP USA Inc.
2,210 -

RFQ

PMCPB5530X

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
PSMN8R040PS127

PSMN8R040PS127

MOSFET N-CH 40V 77A TO220AB

NXP USA Inc.
3,845 -

RFQ

PSMN8R040PS127

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 40 V 77A (Ta) - 7.6mOhm @ 25A, 10V 4V @ 1mA 21 nC @ 10 V ±20V 1262 pF @ 12 V - 86W (Ta) -55°C ~ 175°C (TJ) Through Hole
1500+
1500+ Média diária de RFQ
20,000.000
20,000.000 Unidade padrão do produto
1800+
1800+ Fabricantes em todo o mundo
15,000+
15,000+ Armazém em estoque
Fudong Communication (Shenzhen) Grupo Co., Ltd.

Início

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Produto

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Telefone

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Usuário