Transistores - FETs, MOSFETs - Único

Foto: Número da peça do fabricante Disponibilidade Preço Quantidade Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
NDT452AP

NDT452AP

POWER FIELD-EFFECT TRANSISTOR, 5

Fairchild Semiconductor
2,320 -

RFQ

NDT452AP

Ficha técnica

Bulk - Active P-Channel MOSFET (Metal Oxide) 30 V 5A (Ta) 4.5V, 10V 65mOhm @ 5A, 10V 2.8V @ 250µA 30 nC @ 10 V ±20V 690 pF @ 15 V - 3W (Ta) -65°C ~ 150°C (TJ) Surface Mount
NDP6020P

NDP6020P

POWER FIELD-EFFECT TRANSISTOR, 2

Fairchild Semiconductor
2,314 -

RFQ

NDP6020P

Ficha técnica

Bulk - Active P-Channel MOSFET (Metal Oxide) 20 V 24A (Tc) 4.5V 50mOhm @ 12A, 4.5V 1V @ 250µA 35 nC @ 5 V ±8V 1590 pF @ 10 V - 60W (Tc) -65°C ~ 175°C (TJ) Through Hole
IRFU5305PBF

IRFU5305PBF

IRFU5305 - 20V-250V P-CHANNEL PO

International Rectifier
2,609 -

RFQ

IRFU5305PBF

Ficha técnica

Bulk HEXFET® Active P-Channel MOSFET (Metal Oxide) 55 V 31A (Tc) 10V 65mOhm @ 16A, 10V 4V @ 250µA 63 nC @ 10 V ±20V 1200 pF @ 25 V - 110W (Tc) -55°C ~ 175°C (TJ) Through Hole
ST194E6716HTSA1

ST194E6716HTSA1

ST194 - SILICON N-CHANNEL MOSFET

Infineon Technologies
2,106 -

RFQ

ST194E6716HTSA1

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
FDS4470

FDS4470

POWER FIELD-EFFECT TRANSISTOR, 1

onsemi
2,699 -

RFQ

FDS4470

Ficha técnica

Bulk PowerTrench® Active N-Channel MOSFET (Metal Oxide) 40 V 12.5A (Ta) 10V 9mOhm @ 12.5A, 10V 5V @ 250µA 63 nC @ 10 V +30V, -20V 2659 pF @ 20 V - 2.5W (Ta) -55°C ~ 175°C (TJ) Surface Mount
3LN01S-TL-E

3LN01S-TL-E

3LN01 - 30 VOLT, 0.15 A, 3.7 OHM

onsemi
3,181 -

RFQ

3LN01S-TL-E

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
AUIRFN8401TR

AUIRFN8401TR

AUIRFN8401 - 20V-40V N-CHANNEL A

Infineon Technologies
3,804 -

RFQ

AUIRFN8401TR

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 40 V 84A (Tc) 10V 4.6mOhm @ 50A, 10V 3.9V @ 50µA 66 nC @ 10 V ±20V 2170 pF @ 25 V - 4.2W (Ta), 63W (Tc) -55°C ~ 175°C (TJ) Surface Mount
PBHV9115Z,115

PBHV9115Z,115

NEXPERIA PBHV9115Z - SMALL SIGNA

NXP Semiconductors
3,480 -

RFQ

PBHV9115Z,115

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
SPP20N65C3XKSA1

SPP20N65C3XKSA1

HIGH POWER_LEGACY

Infineon Technologies
3,989 -

RFQ

SPP20N65C3XKSA1

Ficha técnica

Bulk CoolMOS™ Active N-Channel MOSFET (Metal Oxide) 650 V 20.7A (Tc) 10V 190mOhm @ 13.1A, 10V 3.9V @ 1mA 114 nC @ 10 V ±20V 2400 pF @ 25 V - 208W (Tc) -55°C ~ 150°C (TJ) Through Hole
FDS8984-F085

FDS8984-F085

N-CHANNEL POWERTRENCH MOSFET 30V

onsemi
3,502 -

RFQ

FDS8984-F085

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
BUK7226-75A/C1,118

BUK7226-75A/C1,118

N-CHANNEL TRENCHMOS STANDARD LEV

Nexperia USA Inc.
3,543 -

RFQ

BUK7226-75A/C1,118

Ficha técnica

Bulk TrenchMOS™ Active N-Channel MOSFET (Metal Oxide) 75 V 45A (Tc) 10V 26mOhm @ 25A, 10V 4V @ 1mA 48 nC @ 10 V ±20V 2385 pF @ 25 V - 158W (Tc) -55°C ~ 175°C (TJ) Surface Mount
RFD8P06LE

RFD8P06LE

8A, 60V, 0.33OHM, P-CHANNEL POWE

Harris Corporation
3,211 -

RFQ

RFD8P06LE

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
NTPF110N65S3HF

NTPF110N65S3HF

POWER MOSFET, N-CHANNEL, SUPERFE

onsemi
3,425 -

RFQ

NTPF110N65S3HF

Ficha técnica

Bulk FRFET®, SuperFET® III Active N-Channel MOSFET (Metal Oxide) 650 V 30A (Tc) 10V 110mOhm @ 15A, 10V 5V @ 740µA 62 nC @ 10 V ±30V 2635 pF @ 400 V - 240W (Tc) -55°C ~ 150°C (TJ) Through Hole
FDC655BN-F40

FDC655BN-F40

N-CHANNEL POWERTRENCH MOSFET, LO

Fairchild Semiconductor
3,491 -

RFQ

FDC655BN-F40

Ficha técnica

Bulk PowerTrench® Active N-Channel MOSFET (Metal Oxide) 30 V 6.3A (Ta) 4.5V, 10V 25mOhm @ 6.3A, 10V 3V @ 250µA 13 nC @ 10 V ±20V 620 pF @ 15 V - 800mW (Tc) -55°C ~ 150°C (TJ) Surface Mount
NDF0610

NDF0610

SMALL SIGNAL FIELD-EFFECT TRANSI

Fairchild Semiconductor
3,181 -

RFQ

NDF0610

Ficha técnica

Bulk - Active P-Channel MOSFET (Metal Oxide) 60 V 180mA (Ta) - 10Ohm @ 500mA, 10V 3.5V @ 1mA 1.43 nC @ 10 V - 60 pF @ 25 V - - - Through Hole
NVMFD5852NLT1G

NVMFD5852NLT1G

POWER MOSFET 40V, 44A, 6.9 MOHM

onsemi
3,432 -

RFQ

NVMFD5852NLT1G

Ficha técnica

Bulk * Active - - - - - - - - - - - - -
BUK7M6R7-40HX

BUK7M6R7-40HX

BUK7M6R7-40H - N-CHANNEL 40V, ST

Nexperia USA Inc.
3,618 -

RFQ

Bulk Automotive, AEC-Q101 Active N-Channel MOSFET (Metal Oxide) 40 V 50A (Ta) 10V 6.7mOhm @ 20A, 10V 3.6V @ 1mA 24 nC @ 10 V +20V, -10V 1625 pF @ 25 V - 65W (Ta) -55°C ~ 175°C (TJ) Surface Mount
DI040P04PT

DI040P04PT

MOSFET, -40V, -40A, P, 22.7W

Diotec Semiconductor
3,793 -

RFQ

DI040P04PT

Ficha técnica

Tape & Reel (TR),Tape & Reel (TR) - Active P-Channel MOSFET (Metal Oxide) 40 V 40A (Tc) 4.5V, 10V 15mOhm @ 10A, 10V 2.5V @ 250µA 59 nC @ 10 V ±20V 3538 pF @ 20 V - 22.7W (Tc) -55°C ~ 150°C (TJ) Surface Mount
RF1K4909396

RF1K4909396

RF1K4909396 - POWER FIELD-EFFECT

Harris Corporation
2,109 -

RFQ

RF1K4909396

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
PMN230ENEX

PMN230ENEX

PMN230ENE - 60 V, N-CHANNEL TREN

Nexperia USA Inc.
3,170 -

RFQ

PMN230ENEX

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 60 V 1.6A (Ta) 4.5V, 10V 222mOhm @ 1.6A, 10V 2.7V @ 250µA 5 nC @ 10 V ±20V 177 pF @ 30 V - 475mW (Ta), 3.9W (Tc) 150°C (TJ) Surface Mount
1500+
1500+ Média diária de RFQ
20,000.000
20,000.000 Unidade padrão do produto
1800+
1800+ Fabricantes em todo o mundo
15,000+
15,000+ Armazém em estoque
Fudong Communication (Shenzhen) Grupo Co., Ltd.

Início

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Produto

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Telefone

Fudong Communication (Shenzhen) Grupo Co., Ltd.

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