Transistores - FETs, MOSFETs - Único

Foto: Número da peça do fabricante Disponibilidade Preço Quantidade Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
BUK7Y98-80E,115

BUK7Y98-80E,115

NEXPERIA BUK7Y98 - N-CHANNEL 80

NXP Semiconductors
2,509 -

RFQ

BUK7Y98-80E,115

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
HUF76639S3ST-F085

HUF76639S3ST-F085

HUF76639 - N-CHANNEL LOGIC LEVEL

Fairchild Semiconductor
3,985 -

RFQ

HUF76639S3ST-F085

Ficha técnica

Bulk UltraFET™ Active N-Channel MOSFET (Metal Oxide) 100 V 51A (Tc) 10V 26mOhm @ 51A, 10V 3V @ 250µA 86 nC @ 10 V ±16V 2400 pF @ 25 V - 180W (Tc) -55°C ~ 175°C (TJ) Surface Mount
PMPB12UNEAX

PMPB12UNEAX

PMPB12UNEA - 20 V, N-CHANNEL TRE

Nexperia USA Inc.
2,401 -

RFQ

PMPB12UNEAX

Ficha técnica

Bulk Automotive, AEC-Q101, TrenchMOS™ Active N-Channel MOSFET (Metal Oxide) 20 V 7.9A (Ta) 1.8V, 4.5V 18mOhm @ 7.9A, 4.5V 0.9V @ 250µA 17 nC @ 10 V ±12V 1220 pF @ 10 V - 1.6W (Ta), 12.5W (Tc) -55°C ~ 150°C (TJ) Surface Mount
FCD3400N80Z

FCD3400N80Z

POWER FIELD-EFFECT TRANSISTOR, N

onsemi
2,046 -

RFQ

FCD3400N80Z

Ficha técnica

Bulk SuperFET® II Active N-Channel MOSFET (Metal Oxide) 800 V 2A (Tc) 10V 3.4Ohm @ 1A, 10V 4.5V @ 200µA 9.6 nC @ 10 V ±20V 400 pF @ 100 V - 32W (Tc) -55°C ~ 150°C (TJ) Surface Mount
LTC1624CS8#PBF

LTC1624CS8#PBF

LTC1624 - HI EFF SO-8, N-CHENNEL

Analog Devices Inc.
3,030 -

RFQ

LTC1624CS8#PBF

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
BUK9M6R0-40HX

BUK9M6R0-40HX

BUK9M6R0-40H - N-CHANNEL 40V, LO

Nexperia USA Inc.
3,010 -

RFQ

Bulk Automotive, AEC-Q101 Active N-Channel MOSFET (Metal Oxide) 40 V 50A (Ta) 4.5V, 10V 6mOhm @ 20A, 10V 2.15V @ 1mA 36 nC @ 10 V +16V, -10V 2470 pF @ 25 V - 70W (Ta) -55°C ~ 175°C (TJ) Surface Mount
RFP40N10LE

RFP40N10LE

40A, 100V, 0.04OHM, N-CHANNEL PO

Harris Corporation
3,960 -

RFQ

RFP40N10LE

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
IPP60R330P6XKSA1

IPP60R330P6XKSA1

IPP60R330 - 600V COOLMOS N-CHANN

Infineon Technologies
2,772 -

RFQ

IPP60R330P6XKSA1

Ficha técnica

Bulk CoolMOS™ P6 Active N-Channel MOSFET (Metal Oxide) 600 V 12A (Tc) 10V 330mOhm @ 4.5A, 10V 4.5V @ 370µA 22 nC @ 10 V ±20V 1010 pF @ 100 V - 93W (Tc) -55°C ~ 150°C (TJ) Through Hole
FDP150N10A-F102

FDP150N10A-F102

N-CHANNEL POWERTRENCH MOSFET 100

Fairchild Semiconductor
3,980 -

RFQ

FDP150N10A-F102

Ficha técnica

Bulk PowerTrench® Active N-Channel MOSFET (Metal Oxide) 100 V 50A (Tc) 10V 15mOhm @ 50A, 10V 4V @ 250µA 21 nC @ 10 V ±20V 1440 pF @ 50 V - 91W (Tc) -55°C ~ 175°C (TJ) Through Hole
FDP46N30

FDP46N30

46A, 300V, 0.079OHM, N-CHANNEL M

Fairchild Semiconductor
3,585 -

RFQ

FDP46N30

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
FDPF14N30

FDPF14N30

POWER FIELD-EFFECT TRANSISTOR, 1

onsemi
3,983 -

RFQ

FDPF14N30

Ficha técnica

Bulk UniFET™ Active N-Channel MOSFET (Metal Oxide) 300 V 14A (Tc) 10V 290mOhm @ 7A, 10V 5V @ 250µA 25 nC @ 10 V ±30V 1060 pF @ 25 V - 35W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPB65R150CFDATMA1

IPB65R150CFDATMA1

HIGH POWER_LEGACY

Infineon Technologies
3,161 -

RFQ

IPB65R150CFDATMA1

Ficha técnica

Bulk CoolMOS™ Active N-Channel MOSFET (Metal Oxide) 650 V 22.4A (Tc) 10V 150mOhm @ 9.3A, 10V 4.5V @ 900µA 86 nC @ 10 V ±20V 2340 pF @ 100 V - 195.3W (Tc) -55°C ~ 150°C (TJ) Surface Mount
BUK764R0-75C,118

BUK764R0-75C,118

NEXPERIA BUK764 - N-CHANNEL MOSF

NXP Semiconductors
3,854 -

RFQ

BUK764R0-75C,118

Ficha técnica

Bulk Automotive, AEC-Q101, TrenchMOS™ Active N-Channel MOSFET (Metal Oxide) 75 V 100A (Tc) 10V 4mOhm @ 25A, 10V 4V @ 1mA 142 nC @ 10 V ±20V 11659 pF @ 25 V - 333W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRF634B-FP001

IRF634B-FP001

DISCRETE MOSFET

Fairchild Semiconductor
3,788 -

RFQ

IRF634B-FP001

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 250 V 8.1A (Tc) 10V 450mOhm @ 4.05A, 10V 4V @ 250µA 38 nC @ 10 V ±30V 1000 pF @ 25 V - 74W (Tc) -55°C ~ 150°C (TJ) Through Hole
NVMFS6H818NT1G

NVMFS6H818NT1G

SINGLE N-CHANNEL POWER MOSFET 80

onsemi
3,377 -

RFQ

NVMFS6H818NT1G

Ficha técnica

Bulk Automotive, AEC-Q101 Active N-Channel MOSFET (Metal Oxide) 80 V 20A (Ta), 123A (Tc) 10V 3.7mOhm @ 20A, 10V 4V @ 190µA 46 nC @ 10 V ±20V 3100 pF @ 40 V - 3.8W (Ta), 136W (Tc) -55°C ~ 175°C (TJ) Surface Mount
FDB3652-F085

FDB3652-F085

N-CHANNEL POWERTRENCH MOSFET, 10

onsemi
3,524 -

RFQ

FDB3652-F085

Ficha técnica

Bulk Automotive, AEC-Q101, PowerTrench® Active N-Channel MOSFET (Metal Oxide) 100 V 9A (Ta), 61A (Tc) 6V, 10V 16mOhm @ 61A, 10V 4V @ 250µA 53 nC @ 10 V ±20V 2880 pF @ 25 V - 150W (Tc) -55°C ~ 175°C (TJ) Surface Mount
CSD87334Q3D

CSD87334Q3D

CSD87334Q3D - 30V, N-CHANNEL SYN

Texas Instruments
3,486 -

RFQ

CSD87334Q3D

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
FCD5N60TM

FCD5N60TM

POWER MOSFET, N-CHANNEL, SUPERFE

onsemi
2,860 -

RFQ

Bulk SuperFET™ Active N-Channel MOSFET (Metal Oxide) 600 V 4.6A (Tc) 10V 950mOhm @ 2.3A, 10V 5V @ 250µA 16 nC @ 10 V ±30V 600 pF @ 25 V - 54W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IPT60R125CFD7XTMA1

IPT60R125CFD7XTMA1

HIGH POWER_NEW

Infineon Technologies
3,840 -

RFQ

IPT60R125CFD7XTMA1

Ficha técnica

Bulk CoolMOS™ CFD7 Active N-Channel MOSFET (Metal Oxide) 600 V 21A (Tc) 10V 125mOhm @ 6.8A, 10V 4.5V @ 340µA 31 nC @ 10 V ±20V 1330 pF @ 400 V - 127W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SP370251160XTMA3

SP370251160XTMA3

SP370251160 - XENSIV - INTEGRATE

Infineon Technologies
2,620 -

RFQ

SP370251160XTMA3

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
1500+
1500+ Média diária de RFQ
20,000.000
20,000.000 Unidade padrão do produto
1800+
1800+ Fabricantes em todo o mundo
15,000+
15,000+ Armazém em estoque
Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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