Transistores - FETs, MOSFETs - Único

Foto: Número da peça do fabricante Disponibilidade Preço Quantidade Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
BUK7M20-40HX

BUK7M20-40HX

BUK7M20-40H - N-CHANNEL 40V, STA

Nexperia USA Inc.
3,583 -

RFQ

Bulk Automotive, AEC-Q101 Active N-Channel MOSFET (Metal Oxide) 40 V 25A (Ta) 10V 20mOhm @ 10A, 10V 3.6V @ 1mA 10.2 nC @ 10 V +20V, -10V 598 pF @ 25 V - 38W (Ta) -55°C ~ 175°C (TJ) Surface Mount
TPS92690Q1PWPR/NOPB

TPS92690Q1PWPR/NOPB

TPS92690-Q1 AUTOMOTIVE N-CHANNEL

Texas Instruments
2,052 -

RFQ

TPS92690Q1PWPR/NOPB

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
NX138BKR

NX138BKR

NEXPERIA NX138BK - 60 V, SINGLE

NXP Semiconductors
3,514 -

RFQ

NX138BKR

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 60 V 265mA (Ta) 2.5V, 10V 3.5Ohm @ 200mA, 10V 1.5V @ 250µA 0.49 nC @ 4.5 V ±20V 20.2 pF @ 30 V - 310mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
NVMFS6B05NLT1G

NVMFS6B05NLT1G

SINGLE N-CHANNEL POWER MOSFET 10

onsemi
3,412 -

RFQ

NVMFS6B05NLT1G

Ficha técnica

Bulk Automotive, AEC-Q101 Active N-Channel MOSFET (Metal Oxide) 100 V 114A (Tc) 4.5V, 10V 5.6mOhm @ 20A, 10V 3V @ 250µA 6.8 nC @ 10 V ±16V 3980 pF @ 25 V - 3.8W (Ta), 165W (Tc) -55°C ~ 175°C (TJ) Surface Mount
FDD20AN06A0-F085

FDD20AN06A0-F085

FDD20AN06 - N-CHANNEL POWERTRENC

Fairchild Semiconductor
2,518 -

RFQ

FDD20AN06A0-F085

Ficha técnica

Bulk Automotive, AEC-Q101, PowerTrench® Active N-Channel MOSFET (Metal Oxide) 60 V 8A (Ta), 45A (Tc) 10V 20mOhm @ 45A, 10V 4V @ 250µA 19 nC @ 10 V ±20V 950 pF @ 25 V - 90W (Tc) -55°C ~ 175°C (TJ) Surface Mount
NVLUS4C12NTAG

NVLUS4C12NTAG

NVLUS4C12 - SINGLE N-CHANNEL COO

onsemi
2,355 -

RFQ

NVLUS4C12NTAG

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
AUIRFR2405

AUIRFR2405

AUIRFR2405 - 55V-60V N-CHANNEL A

Infineon Technologies
2,219 -

RFQ

AUIRFR2405

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 55 V 30A (Tc) 10V 16mOhm @ 34A, 10V 4V @ 250µA 110 nC @ 10 V ±20V 2430 pF @ 25 V - 110W (Tc) -55°C ~ 175°C (TJ) Surface Mount
AUIRFN8403TR

AUIRFN8403TR

AUIRFN8403 - 20V-40V N-CHANNEL A

Infineon Technologies
2,029 -

RFQ

AUIRFN8403TR

Ficha técnica

Bulk Automotive, AEC-Q101, HEXFET® Active N-Channel MOSFET (Metal Oxide) 40 V 95A (Tc) - 3.3mOhm @ 50A, 10V 3.9V @ 100µA 98 nC @ 10 V ±20V 3174 pF @ 25 V - 4.3W (Ta), 94W (Tc) -55°C ~ 175°C (TJ) Surface Mount
AUIRF7319QTR

AUIRF7319QTR

MOSFET_(20V,40V)

Infineon Technologies
3,490 -

RFQ

AUIRF7319QTR

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
AUIRF7669L2TRCT

AUIRF7669L2TRCT

AUIRF7669 - 75V-100V N-CHANNEL A

International Rectifier
3,361 -

RFQ

AUIRF7669L2TRCT

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 100 V 19A (Ta), 114A (Tc) 10V 4.4mOhm @ 68A, 10V 5V @ 250µA 120 nC @ 10 V ±20V 5660 pF @ 25 V - 3.3W (Ta), 100W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFHM8342TRPBF

IRFHM8342TRPBF

IRFHM8342 - 12V-300V N-CHANNEL P

International Rectifier
2,337 -

RFQ

IRFHM8342TRPBF

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 30 V 10A (Ta), 28A (Tc) - 16mOhm @ 17A, 10V 2.35V @ 25µA 10 nC @ 10 V ±20V 560 pF @ 25 V - 2.6W (Ta), 20W (Tc) -55°C ~ 150°C (TJ) Surface Mount
FGD3050G2

FGD3050G2

FGD3050G2 - N-CHANNEL IGNITION N

onsemi
3,601 -

RFQ

FGD3050G2

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
FDD8796

FDD8796

POWER FIELD-EFFECT TRANSISTOR, 3

onsemi
2,996 -

RFQ

FDD8796

Ficha técnica

Bulk PowerTrench® Active N-Channel MOSFET (Metal Oxide) 25 V 35A (Tc) 4.5V, 10V 5.7mOhm @ 35A, 10V 2.5V @ 250µA 52 nC @ 10 V ±20V 2610 pF @ 13 V - 88W (Tc) -55°C ~ 175°C (TJ) Surface Mount
NTDV20N06LT4G

NTDV20N06LT4G

SINGLE N-CHANNEL LOGIC LEVEL POW

onsemi
2,175 -

RFQ

NTDV20N06LT4G

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 60 V 20A (Ta) 5V 48mOhm @ 10A, 5V 2V @ 250µA 32 nC @ 5 V ±15V 990 pF @ 25 V - 1.36W (Ta), 60W (Tj) -55°C ~ 175°C (TJ) Surface Mount
PSMN034-100PS,127

PSMN034-100PS,127

PSMN034-100PS - N-CHANNEL 100V S

Nexperia USA Inc.
3,886 -

RFQ

Bulk - Active N-Channel MOSFET (Metal Oxide) 100 V 32A (Tc) 10V 34.5mOhm @ 15A, 10V 4V @ 1mA 23.8 nC @ 10 V ±20V 1201 pF @ 50 V - 86W (Tc) -55°C ~ 175°C (TJ) Through Hole
NVTFS5824NLTWG

NVTFS5824NLTWG

NVTFS5824 - POWER MOSFET 60V, 20

onsemi
2,905 -

RFQ

NVTFS5824NLTWG

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 60 V 37A (Tc) 4.5V, 10V 20.5mOhm @ 10A, 10V 2.5V @ 250µA 16 nC @ 10 V ±20V 850 pF @ 25 V - 3.2W (Ta), 57W (Tc) -55°C ~ 175°C (TJ) Surface Mount
MCH6601-TL-E

MCH6601-TL-E

MCH6601 - P-CHANNEL POWER MOSFET

onsemi
2,869 -

RFQ

MCH6601-TL-E

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
STD5407NT4G

STD5407NT4G

STD5407 - POWER MOSFET 40V, 38A

onsemi
3,629 -

RFQ

STD5407NT4G

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 40 V 7.6A (Ta), 38A (Tc) 5V, 10V 26mOhm @ 20A, 10V 3.5V @ 250µA 20 nC @ 10 V ±20V 1000 pF @ 32 V - 2.9W (Ta), 75W (Tc) -55°C ~ 175°C (TJ)
NTD20N03L27T4G

NTD20N03L27T4G

POWER FIELD-EFFECT TRANSISTOR, 2

onsemi
3,540 -

RFQ

NTD20N03L27T4G

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 30 V 20A (Ta) 4V, 5V 27mOhm @ 10A, 5V 2V @ 250µA 18.9 nC @ 10 V ±20V 1260 pF @ 25 V - 1.75W (Ta), 74W (Tc) -55°C ~ 150°C (TJ) Surface Mount
NX7002AK2,215

NX7002AK2,215

NEXPERIA NX7002AK - SMALL SIGNAL

NXP Semiconductors
2,811 -

RFQ

NX7002AK2,215

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
1500+
1500+ Média diária de RFQ
20,000.000
20,000.000 Unidade padrão do produto
1800+
1800+ Fabricantes em todo o mundo
15,000+
15,000+ Armazém em estoque
Fudong Communication (Shenzhen) Grupo Co., Ltd.

Início

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Produto

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Telefone

Fudong Communication (Shenzhen) Grupo Co., Ltd.

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