Transistores - FETs, MOSFETs - Único

Foto: Número da peça do fabricante Disponibilidade Preço Quantidade Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IPP50R190CEXKSA1

IPP50R190CEXKSA1

IPP50R190 - 500V, 0.19OHM, N-CHA

Infineon Technologies
2,361 -

RFQ

IPP50R190CEXKSA1

Ficha técnica

Bulk CoolMOS™ CE Active N-Channel MOSFET (Metal Oxide) 500 V 18.5A (Tc) 13V 190mOhm @ 6.2A, 13V 3.5V @ 510µA 47.2 nC @ 10 V ±20V 1137 pF @ 100 V - 127W (Tc) -55°C ~ 150°C (TJ) Through Hole
FDS6898AZ-F085

FDS6898AZ-F085

FDS6898 - DUAL N-CHANNEL LOGIC L

Fairchild Semiconductor
2,617 -

RFQ

FDS6898AZ-F085

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
FDH047AN08AD

FDH047AN08AD

FDH047AN08A0 - 75V N-CHANNEL POW

Fairchild Semiconductor
2,003 -

RFQ

FDH047AN08AD

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
NVD6416ANLT4G-001-VF01

NVD6416ANLT4G-001-VF01

NVD6416 - N-CHANNEL POWER MOSFET

onsemi
2,165 -

RFQ

NVD6416ANLT4G-001-VF01

Ficha técnica

Bulk Automotive, AEC-Q101 Active N-Channel MOSFET (Metal Oxide) 100 V 19A (Tc) 4.5V, 10V 74mOhm @ 19A, 10V 2.2V @ 250µA 40 nC @ 10 V ±20V 1000 pF @ 25 V - 71W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPW90R120C3FKSA1

IPW90R120C3FKSA1

MOSFET N-CH 900V 36A TO247-3 COO

Infineon Technologies
2,813 -

RFQ

IPW90R120C3FKSA1

Ficha técnica

Bulk CoolMOS™ Active N-Channel MOSFET (Metal Oxide) 900 V 36A (Tc) 10V 120mOhm @ 26A, 10V 3.5V @ 2.9mA 270 nC @ 10 V ±20V 6800 pF @ 100 V - 417W (Tc) -55°C ~ 150°C (TJ) Through Hole
NVMFS6B25NLWFT1G

NVMFS6B25NLWFT1G

NVMFS6B25 - SINGLE N-CHANNEL POW

onsemi
3,573 -

RFQ

NVMFS6B25NLWFT1G

Ficha técnica

Bulk Automotive, AEC-Q101 Active N-Channel MOSFET (Metal Oxide) 100 V 8A (Ta), 33A (Ta) 4.5V, 10V 24mOhm @ 20A, 10V 3V @ 250µA 13.5 nC @ 10 V ±16V 905 pF @ 25 V - 3.6W (Ta), 62W (Tc) -55°C ~ 175°C (TJ) Surface Mount
PMN70EPEX

PMN70EPEX

PMN70EPE - 30 V, P-CHANNEL TRENC

Nexperia USA Inc.
3,425 -

RFQ

PMN70EPEX

Ficha técnica

Bulk - Active P-Channel MOSFET (Metal Oxide) 30 V 4.4A (Ta) 4.5V, 10V 80mOhm @ 3.3A, 10V 3V @ 250µA 11.5 nC @ 10 V ±20V 370 pF @ 15 V - 570mW (Ta), 6.25W (Tc) -55°C ~ 150°C (TJ) Surface Mount
BSS670S2LH6433XTMA1

BSS670S2LH6433XTMA1

SMALL SIGNAL MOSFETS

Infineon Technologies
2,408 -

RFQ

BSS670S2LH6433XTMA1

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
NTLUS4C12NTBG

NTLUS4C12NTBG

NTLUS4C12N - SINGLE N-CHANNEL CO

onsemi
3,763 -

RFQ

NTLUS4C12NTBG

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 30 V 6.8A (Ta) 3.3V, 10V 9mOhm @ 9A, 10V 2.1V @ 250µA 18 nC @ 10 V ±20V 1172 pF @ 15 V - 630mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
IRF7410GTRPBF

IRF7410GTRPBF

IRF7410 - 16A, 12V, 0.007OHM, P-

Infineon Technologies
3,593 -

RFQ

IRF7410GTRPBF

Ficha técnica

Bulk HEXFET® Active P-Channel MOSFET (Metal Oxide) 12 V 16A (Ta) 1.8V, 4.5V 7mOhm @ 16A, 4.5V 900mV @ 250µA 91 nC @ 4.5 V ±8V 8676 pF @ 10 V - 2.5W (Ta) -55°C ~ 150°C (TJ) Surface Mount
AUIRFS4310Z

AUIRFS4310Z

AUIRFS4310 - 75V-100V N-CHANNEL

International Rectifier
2,675 -

RFQ

AUIRFS4310Z

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 100 V 120A (Tc) 10V 6mOhm @ 75A, 10V 4V @ 150µA 170 nC @ 10 V ±20V 6860 pF @ 50 V - 250W (Tc) -55°C ~ 175°C (TJ) Surface Mount
PMT560ENEAX

PMT560ENEAX

NEXPERIA PMT560ENEA - 100V N-CHA

NXP Semiconductors
2,597 -

RFQ

PMT560ENEAX

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 100 V 1.1A (Ta) 4.5V, 10V 715mOhm @ 1.1A, 10V 2.7V @ 250µA 4.4 nC @ 10 V ±20V 112 pF @ 50 V - 750mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
PMV130ENEAR

PMV130ENEAR

NEXPERIA PMV130 - 40 V, N-CHANNE

NXP Semiconductors
2,958 -

RFQ

PMV130ENEAR

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 40 V 2.1A (Ta) 4.5V, 10V 120mOhm @ 1.5A, 10V 2.5V @ 250µA 3.6 nC @ 10 V ±20V 170 pF @ 20 V - 460mW (Ta), 5W (Tc) -55°C ~ 150°C (TJ) Surface Mount
BUK9GTHP-55PJTR,51

BUK9GTHP-55PJTR,51

IPOC TRENCHFET

Nexperia USA Inc.
2,998 -

RFQ

Bulk - Active N-Channel MOSFET (Metal Oxide) 55 V - - - - - - - - - - Surface Mount
FDC658AP-G

FDC658AP-G

FDC658AP - MOSFET 30V 50.0 MOHM

Fairchild Semiconductor
2,116 -

RFQ

FDC658AP-G

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
FDP8860

FDP8860

POWER FIELD-EFFECT TRANSISTOR, 8

onsemi
3,589 -

RFQ

FDP8860

Ficha técnica

Bulk PowerTrench® Active N-Channel MOSFET (Metal Oxide) 30 V 80A (Tc) 4.5V, 10V 2.5mOhm @ 80A, 10V 2.5V @ 250µA 222 nC @ 10 V ±20V 12240 pF @ 15 V - 254W (Tc) -55°C ~ 175°C (TJ) Through Hole
HUF75345P3

HUF75345P3

N-CHANNEL ULTRAFET POWER MOSFET

onsemi
586 -

RFQ

HUF75345P3

Ficha técnica

Bulk UltraFET™ Active N-Channel MOSFET (Metal Oxide) 55 V 75A (Tc) 10V 7mOhm @ 75A, 10V 4V @ 250µA 275 nC @ 20 V ±20V 4000 pF @ 25 V - 325W (Tc) -55°C ~ 175°C (TJ) Through Hole
MCH6606-TL-E

MCH6606-TL-E

MCH6606 - MOSFET

onsemi
3,593 -

RFQ

Bulk * Active - - - - - - - - - - - - - -
PMN120ENEX

PMN120ENEX

PMN120ENE - 60V, N-CHANNEL TRENC

Nexperia USA Inc.
3,202 -

RFQ

PMN120ENEX

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 60 V 3.1A (Ta) 4.5V, 10V 123mOhm @ 2.4A, 10V 2.7V @ 250µA 7.4 nC @ 10 V ±20V 275 pF @ 30 V - 1.4W (Ta), 6.25W (Tc) -55°C ~ 150°C (TJ) Surface Mount
FDMC013P030Z

FDMC013P030Z

P-CHANNEL POWERTRENCH MOSFET -30

onsemi
3,228 -

RFQ

FDMC013P030Z

Ficha técnica

Bulk - Active P-Channel MOSFET (Metal Oxide) 30 V 54A (Tc) 4.5V, 10V 7mOhm @ 14A, 10V 3V @ 250µA 135 nC @ 10 V ±25V 5785 pF @ 15 V - 30W (Tc) -55°C ~ 150°C (TJ) Surface Mount
1500+
1500+ Média diária de RFQ
20,000.000
20,000.000 Unidade padrão do produto
1800+
1800+ Fabricantes em todo o mundo
15,000+
15,000+ Armazém em estoque
Fudong Communication (Shenzhen) Grupo Co., Ltd.

Início

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Produto

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Telefone

Fudong Communication (Shenzhen) Grupo Co., Ltd.

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