Transistores - FETs, MOSFETs - Único

Foto: Número da peça do fabricante Disponibilidade Preço Quantidade Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
RF1S9640SM9A

RF1S9640SM9A

11A, 200V, 0.5OHM, P-CHANNEL POW

Harris Corporation
3,435 -

RFQ

RF1S9640SM9A

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
IPW60R190E6FKSA1

IPW60R190E6FKSA1

IPW60R190 - 600V COOLMOS N-CHANN

Infineon Technologies
2,743 -

RFQ

IPW60R190E6FKSA1

Ficha técnica

Bulk CoolMOS™ Active N-Channel MOSFET (Metal Oxide) 600 V 20.2A (Tc) 10V 190mOhm @ 9.5A, 10V 3.5V @ 630µA 63 nC @ 10 V ±20V 1400 pF @ 100 V - 151W (Tc) -55°C ~ 150°C (TJ) Through Hole
SPI11N65C3XKSA1

SPI11N65C3XKSA1

LOW POWER_LEGACY

Infineon Technologies
3,411 -

RFQ

SPI11N65C3XKSA1

Ficha técnica

Bulk CoolMOS™ Active N-Channel MOSFET (Metal Oxide) 650 V 11A (Tc) 10V 380mOhm @ 7A, 10V 3.9V @ 500µA 60 nC @ 10 V ±20V 1200 pF @ 25 V - 125W (Tc) -55°C ~ 150°C (TJ) Through Hole
FDD8870-F085

FDD8870-F085

FDD8870 - N-CHANNEL POWERTRENCH

onsemi
2,826 -

RFQ

FDD8870-F085

Ficha técnica

Bulk Automotive, AEC-Q101, PowerTrench® Active N-Channel MOSFET (Metal Oxide) 30 V 21A (Ta) 4.5V, 10V 3.9mOhm @ 35A, 10V 2.5V @ 250µA 118 nC @ 10 V ±20V 5160 pF @ 15 V - 160W (Tc) -55°C ~ 175°C (TJ) Surface Mount
FQPF11N40C

FQPF11N40C

POWER FIELD-EFFECT TRANSISTOR, 1

onsemi
3,896 -

RFQ

FQPF11N40C

Ficha técnica

Bulk QFET® Active N-Channel MOSFET (Metal Oxide) 400 V 10.5A (Tc) 10V 530mOhm @ 5.25A, 10V 4V @ 250µA 35 nC @ 10 V ±30V 1090 pF @ 25 V - 44W (Tc) -55°C ~ 150°C (TJ) Through Hole
FQPF9N50CF

FQPF9N50CF

POWER FIELD-EFFECT TRANSISTOR, 9

onsemi
3,001 -

RFQ

FQPF9N50CF

Ficha técnica

Bulk FRFET® Active N-Channel MOSFET (Metal Oxide) 500 V 9A (Tc) 10V 850mOhm @ 4.5A, 10V 4V @ 250µA 35 nC @ 10 V ±30V 1030 pF @ 25 V - 44W (Tc) -55°C ~ 150°C (TJ) Through Hole
NDD60N745U1-1G

NDD60N745U1-1G

NDD60N745 - POWER MOSFET 600V 6.

onsemi
3,316 -

RFQ

NDD60N745U1-1G

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 600 V 6.6A (Tc) 10V 745mOhm @ 3.25A, 10V 4V @ 250µA 15 nC @ 10 V ±25V 440 pF @ 50 V - 84W (Tc) -55°C ~ 150°C (TJ) Through Hole
NDS351N

NDS351N

SMALL SIGNAL FIELD-EFFECT TRANSI

onsemi
3,577 -

RFQ

NDS351N

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 30 V 1.1A (Ta) 4.5V, 10V 160mOhm @ 1.4A, 10V 2V @ 250µA 3.5 nC @ 5 V ±20V 140 pF @ 10 V - 500mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
FDB8832-F085

FDB8832-F085

FDB8832 - N-CHANNEL LOGIC LEVEL

Fairchild Semiconductor
3,938 -

RFQ

FDB8832-F085

Ficha técnica

Bulk Automotive, AEC-Q101, PowerTrench® Active N-Channel MOSFET (Metal Oxide) 30 V 34A (Ta) 4.5V, 10V 1.9mOhm @ 80A, 10V 3V @ 250µA 265 nC @ 10 V ±20V 11400 pF @ 15 V - 300W (Tc) -55°C ~ 175°C (TJ) Surface Mount
PMV100XPEA215

PMV100XPEA215

NEXPERIA PMV100 - N-CHANNEL MOSF

NXP Semiconductors
2,958 -

RFQ

PMV100XPEA215

Ficha técnica

Bulk - Active P-Channel MOSFET (Metal Oxide) 20 V 2.4A (Ta) - 128mOhm @ 2.4A, 4.5V 1.25V @ 250µA 6 nC @ 4.5 V ±12V 386 pF @ 10 V - 463mW (Ta), 4.45W (Tc) -55°C ~ 150°C (TJ) Surface Mount
BUK96180-100A,118

BUK96180-100A,118

NEXPERIA BUK96180-100A - 11A, 10

Nexperia USA Inc.
2,975 -

RFQ

BUK96180-100A,118

Ficha técnica

Bulk Automotive, AEC-Q101, TrenchMOS™ Active N-Channel MOSFET (Metal Oxide) 100 V 11A (Ta) - 173mOhm @ 5A, 10V 2V @ 1mA - ±15V 619 pF @ 25 V - 54W (Ta) -55°C ~ 175°C (TJ) Surface Mount
IPW90R1K0C3FKSA1

IPW90R1K0C3FKSA1

IPW90R1 - 900V COOLMOS N-CHANNEL

Infineon Technologies
2,002 -

RFQ

IPW90R1K0C3FKSA1

Ficha técnica

Bulk CoolMOS™ Active N-Channel MOSFET (Metal Oxide) 900 V 5.7A (Tc) 10V 1Ohm @ 3.3A, 10V 3.5V @ 370µA 34 nC @ 10 V ±20V 850 pF @ 100 V - 89W (Tc) -55°C ~ 150°C (TJ) Through Hole
FDMC7208S

FDMC7208S

DUAL N-CHANNEL POWERTRENCH MOSFE

onsemi
3,086 -

RFQ

Bulk * Active - - - - - - - - - - - - - -
PSMN6R0-30YLB,115

PSMN6R0-30YLB,115

NEXPERIA PSMN6R0-25YLD - 61A, 25

NXP Semiconductors
3,424 -

RFQ

PSMN6R0-30YLB,115

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 30 V 71A (Tc) 4.5V, 10V 6.5mOhm @ 20A, 10V 1.95V @ 1mA 19 nC @ 10 V ±20V 1088 pF @ 15 V - 58W (Tc) -55°C ~ 175°C (TJ) Surface Mount
BSP135H6433XTMA1

BSP135H6433XTMA1

BSP135 - POWER FIELD-EFFECT TRAN

Infineon Technologies
3,862 -

RFQ

BSP135H6433XTMA1

Ficha técnica

Bulk SIPMOS® Active N-Channel MOSFET (Metal Oxide) 600 V 120mA (Ta) 0V, 10V 45Ohm @ 120mA, 10V 1V @ 94µA 4.9 nC @ 5 V ±20V 146 pF @ 25 V Depletion Mode 1.8W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IPU60R600C6AKMA1

IPU60R600C6AKMA1

IPU60R600 - COOLMOS N-CHANNEL PO

Infineon Technologies
3,040 -

RFQ

IPU60R600C6AKMA1

Ficha técnica

Bulk CoolMOS™ C6 Active N-Channel MOSFET (Metal Oxide) 600 V 7.3A (Tc) 10V 600mOhm @ 2.4A, 10V 3.5V @ 200µA 20.5 nC @ 10 V ±20V 440 pF @ 100 V - 63W (Tc) -55°C ~ 150°C (TJ) Through Hole
FDD8780

FDD8780

POWER FIELD-EFFECT TRANSISTOR, 3

onsemi
3,611 -

RFQ

FDD8780

Ficha técnica

Bulk PowerTrench® Active N-Channel MOSFET (Metal Oxide) 25 V 35A (Tc) 4.5V, 10V 8.5mOhm @ 35A, 10V 2.5V @ 250µA 29 nC @ 10 V ±20V 1440 pF @ 13 V - 50W (Tc) -55°C ~ 175°C (TJ) Surface Mount
NVD5890NT4G-VF01

NVD5890NT4G-VF01

NVD5890 - POWER MOSFET 40V, 123A

onsemi
2,937 -

RFQ

NVD5890NT4G-VF01

Ficha técnica

Tape & Reel (TR),Bulk * Active - - - - - - - - - - - - - -
IPDD60R102G7XTMA1

IPDD60R102G7XTMA1

IPDD60R102 - HIGH POWER_NEW

Infineon Technologies
3,851 -

RFQ

IPDD60R102G7XTMA1

Ficha técnica

Bulk CoolMOS™ G7 Active N-Channel MOSFET (Metal Oxide) 600 V 23A (Tc) 10V 102mOhm @ 7.8A, 10V 4V @ 390µA 34 nC @ 10 V ±20V 1320 pF @ 400 V - 139W (Tc) -55°C ~ 150°C (TJ) Surface Mount
NDB6020P

NDB6020P

P-CHANNEL LOGIC LEVEL ENHANCEMEN

onsemi
2,444 -

RFQ

NDB6020P

Ficha técnica

Bulk - Active P-Channel MOSFET (Metal Oxide) 20 V 24A (Tc) 4.5V 50mOhm @ 12A, 4.5V 1V @ 250µA 35 nC @ 5 V ±8V 1590 pF @ 10 V - 60W (Tc) -65°C ~ 175°C (TJ) Surface Mount
1500+
1500+ Média diária de RFQ
20,000.000
20,000.000 Unidade padrão do produto
1800+
1800+ Fabricantes em todo o mundo
15,000+
15,000+ Armazém em estoque
Fudong Communication (Shenzhen) Grupo Co., Ltd.

Início

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Produto

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Telefone

Fudong Communication (Shenzhen) Grupo Co., Ltd.

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