Transistores - FETs, MOSFETs - Único

Foto: Número da peça do fabricante Disponibilidade Preço Quantidade Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IPL60R095CFD7AUMA1

IPL60R095CFD7AUMA1

HIGH POWER_NEW

Infineon Technologies
3,709 -

RFQ

IPL60R095CFD7AUMA1

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
FDC6302P

FDC6302P

SMALL SIGNAL FIELD-EFFECT TRANSI

onsemi
3,449 -

RFQ

FDC6302P

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
IPI120N10S403AKSA1

IPI120N10S403AKSA1

IPI120N10S4-03 - 75V-100V N-CHAN

Infineon Technologies
2,117 -

RFQ

IPI120N10S403AKSA1

Ficha técnica

Bulk Automotive, AEC-Q101, OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 100 V 120A (Tc) 10V 3.9mOhm @ 100A, 10V 3.5V @ 180µA 140 nC @ 10 V ±20V 10120 pF @ 25 V - 250W (Tc) -55°C ~ 175°C (TJ) Through Hole
NX7002BKMBYL

NX7002BKMBYL

NEXPERIA NX7002B - 60V, N-CHANNE

NXP Semiconductors
2,237 -

RFQ

NX7002BKMBYL

Ficha técnica

Bulk TrenchMOS™ Active N-Channel MOSFET (Metal Oxide) 60 V 350mA (Ta) 5V, 10V 2.8Ohm @ 200mA, 10V 2.1V @ 250µA 1 nC @ 10 V ±20V 23.6 pF @ 10 V - 350mW (Ta), 3.1W (Tc) -55°C ~ 150°C (TJ) Surface Mount
NDS9407-G

NDS9407-G

NDS9407-G - MOSFET BULK

onsemi
2,833 -

RFQ

Bulk PowerTrench® Active P-Channel MOSFET (Metal Oxide) 60 V 3A (Ta) 4.5V, 10V 150mOhm @ 3A, 10V 3V @ 250µA 22 nC @ 10 V ±20V 732 pF @ 30 V - 2.5W (Ta) -55°C ~ 175°C (TJ) Surface Mount
FDMA008P20LZ

FDMA008P20LZ

SINGLE P-CHANNEL POWERTRENCH MOS

onsemi
3,456 -

RFQ

FDMA008P20LZ

Ficha técnica

Bulk - Active P-Channel MOSFET (Metal Oxide) 20 V 12A (Ta) 1.5V, 4.5V 13mOhm @ 2.5A, 4.5V 1.4V @ 250µA 39 nC @ 4.5 V ±8V 4383 pF @ 10 V - 2.4W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IPD60R750E6ATMA1

IPD60R750E6ATMA1

IPD60R750 - 600V COOLMOS N-CHANN

Infineon Technologies
2,781 -

RFQ

IPD60R750E6ATMA1

Ficha técnica

Bulk CoolMOS™ E6 Active N-Channel MOSFET (Metal Oxide) 600 V 5.7A (Tc) 10V 750mOhm @ 2A, 10V 3.5V @ 170µA 17.2 nC @ 10 V ±20V 373 pF @ 100 V - 48W (Tc) -55°C ~ 150°C (TJ) Surface Mount
MMBF5434

MMBF5434

MMBF5434 - N-CHANNEL SWITCH

onsemi
3,537 -

RFQ

MMBF5434

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
IMW65R107M1HXKSA1

IMW65R107M1HXKSA1

SILICON CARBIDE MOSFET

Infineon Technologies
3,341 -

RFQ

IMW65R107M1HXKSA1

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
PMXB56ENZ

PMXB56ENZ

NEXPERIA PMXB56EN - 30 V, N-CHAN

NXP Semiconductors
2,092 -

RFQ

PMXB56ENZ

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 30 V 3.2A (Ta) 4.5V, 10V 55mOhm @ 3.2A, 10V 2V @ 250µA 6.3 nC @ 10 V ±20V 209 pF @ 15 V - 400mW (Ta), 8.33W (Tc) -55°C ~ 150°C (TJ) Surface Mount
FDMF6823

FDMF6823

FDMF6823 - PMIC - FULL, HALF-BRI

Fairchild Semiconductor
2,441 -

RFQ

FDMF6823

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
NVLJD4007NZTBG

NVLJD4007NZTBG

NVLJD4007 - DUAL N-CHANNEL SMALL

onsemi
3,926 -

RFQ

NVLJD4007NZTBG

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
BUK9614-60E,118

BUK9614-60E,118

NEXPERIA BUK9614-60E - POWER FIE

NXP Semiconductors
2,308 -

RFQ

BUK9614-60E,118

Ficha técnica

Bulk Automotive, AEC-Q101, TrenchMOS™ Active N-Channel MOSFET (Metal Oxide) 60 V 56A (Tc) 5V 12.8mOhm @ 15A, 10V 2.1V @ 1mA 20.5 nC @ 5 V ±10V 2651 pF @ 25 V - 96W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPP60R600E6XKSA1

IPP60R600E6XKSA1

IPP60R600 - COOLMOS N-CHANNEL PO

Infineon Technologies
3,760 -

RFQ

IPP60R600E6XKSA1

Ficha técnica

Bulk CoolMOS™ Active N-Channel MOSFET (Metal Oxide) 600 V 7.3A (Tc) 10V 600mOhm @ 2.4A, 10V 3.5V @ 200µA 20.5 nC @ 10 V ±20V 440 pF @ 100 V - 63W (Tc) -55°C ~ 150°C (TJ) Through Hole
NTR1P02LT1H

NTR1P02LT1H

SMALL SIGNAL FIELD-EFFECT TRANSI

onsemi
3,879 -

RFQ

NTR1P02LT1H

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
PSMN070-200B,118

PSMN070-200B,118

NEXPERIA PSMN070 - 35A, 200V, 0.

NXP Semiconductors
2,113 -

RFQ

PSMN070-200B,118

Ficha técnica

Bulk TrenchMOS™ Active N-Channel MOSFET (Metal Oxide) 200 V 35A (Tc) 10V 70mOhm @ 17A, 10V 4V @ 1mA 77 nC @ 10 V ±20V 4570 pF @ 25 V - 250W (Tc) -55°C ~ 175°C (TJ) Surface Mount
DI028P03PT

DI028P03PT

MOSFET, -30V, -28A, 40W

Diotec Semiconductor
2,928 -

RFQ

DI028P03PT

Ficha técnica

Tape & Reel (TR),Tape & Reel (TR) - Active P-Channel MOSFET (Metal Oxide) 30 V 28A (Tc) 4.5V, 10V 9mOhm @ 20A, 10V 2.5V @ 250µA 30 nC @ 10 V ±20V 2060 pF @ 15 V - 40W (Tc) -55°C ~ 150°C (TJ) Surface Mount
AUIRLR3705ZTR

AUIRLR3705ZTR

MOSFET N-CH 55V 42A DPAK

International Rectifier
2,303 -

RFQ

AUIRLR3705ZTR

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 55 V 42A (Tc) - 8mOhm @ 42A, 10V 3V @ 250µA 66 nC @ 5 V - 2900 pF @ 25 V - - - Surface Mount
IRFF233

IRFF233

4.5A, 150V, 0.6OHM, N-CHANNEL PO

International Rectifier
2,728 -

RFQ

IRFF233

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
AUIRLR2905ZTRL

AUIRLR2905ZTRL

MOSFET N-CH 55V 42A DPAK

International Rectifier
2,733 -

RFQ

AUIRLR2905ZTRL

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 55 V 42A (Tc) - 13.5mOhm @ 36A, 10V 3V @ 250µA 35 nC @ 5 V - 1570 pF @ 25 V - 110W (Tc) -55°C ~ 175°C (TJ) Surface Mount
1500+
1500+ Média diária de RFQ
20,000.000
20,000.000 Unidade padrão do produto
1800+
1800+ Fabricantes em todo o mundo
15,000+
15,000+ Armazém em estoque
Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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