Transistores - FETs, MOSFETs - Único

Foto: Número da peça do fabricante Disponibilidade Preço Quantidade Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
BUK9Y11-80EX

BUK9Y11-80EX

NEXPERIA BUK9Y11 - TRANSISTOR >3

NXP Semiconductors
2,973 -

RFQ

BUK9Y11-80EX

Ficha técnica

Bulk TrenchMOS™ Active N-Channel MOSFET (Metal Oxide) 80 V 84A (Tc) 5V 10mOhm @ 25A, 10V 2.1V @ 1mA 44.2 nC @ 5 V ±10V 6506 pF @ 25 V - 194W (Tc) -55°C ~ 175°C (TJ) Surface Mount
ISC045N03L5SATMA1

ISC045N03L5SATMA1

TRENCH <= 40V

Infineon Technologies
2,214 -

RFQ

ISC045N03L5SATMA1

Ficha técnica

Bulk OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 30 V 18A (Ta), 63A (Tc) 4.5V, 10V 4.5mOhm @ 30A, 10V 2V @ 250µA 13 nC @ 10 V ±20V 870 pF @ 15 V - 2.5W (Ta), 30W (Tc) -55°C ~ 150°C (TJ) Surface Mount
BUK9K5R6-30EX

BUK9K5R6-30EX

BUK9K5R6-30E - DUAL N-CHANNEL 30

Nexperia USA Inc.
2,149 -

RFQ

BUK9K5R6-30EX

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
FDG327N

FDG327N

N-CHANNEL POWERTRENCH MOSFET, 20

onsemi
2,106 -

RFQ

FDG327N

Ficha técnica

Bulk PowerTrench® Active N-Channel MOSFET (Metal Oxide) 20 V 1.5A (Ta) 1.8V, 4.5V 90mOhm @ 1.5A, 4.5V 1.5V @ 250µA 6.3 nC @ 4.5 V ±8V 423 pF @ 10 V - 420mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
HP4936DY

HP4936DY

POWER FIELD-EFFECT TRANSISTOR, 5

Harris Corporation
2,080 -

RFQ

HP4936DY

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
PSMN012-80BS,118

PSMN012-80BS,118

NEXPERIA PSMN012-80BS - 74A, 80V

NXP Semiconductors
2,082 -

RFQ

PSMN012-80BS,118

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 80 V 74A (Tc) 10V 11mOhm @ 15A, 10V 4V @ 1mA 43 nC @ 10 V ±20V 2782 pF @ 12 V - 148W (Tc) -55°C ~ 175°C (TJ) Surface Mount
FDS8928A

FDS8928A

POWER FIELD-EFFECT TRANSISTOR, 5

onsemi
2,172 -

RFQ

FDS8928A

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
PMPB100ENEX

PMPB100ENEX

PMPB100ENE - 30 V, N-CHANNEL MOS

Nexperia USA Inc.
2,615 -

RFQ

PMPB100ENEX

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 30 V 5.1A (Ta) 4.5V, 10V 72mOhm @ 3.9A, 10V 2.5V @ 250µA 5 nC @ 10 V ±20V 157 pF @ 15 V - 3.3W (Ta) -55°C ~ 175°C (TJ) Surface Mount
NVGS3443T1G

NVGS3443T1G

SINGLE P-CHANNEL POWER MOSFET -2

onsemi
2,556 -

RFQ

NVGS3443T1G

Ficha técnica

Bulk - Active P-Channel MOSFET (Metal Oxide) 20 V 3.1A (Ta) - 65mOhm @ 4.4A, 4.5V 1.5V @ 250µA 15 nC @ 4.5 V - 565 pF @ 5 V - - -55°C ~ 150°C (TJ) Surface Mount
FDMC8200

FDMC8200

FDMC8200 - DUAL N-CHANNEL POWERT

Fairchild Semiconductor
2,937 -

RFQ

FDMC8200

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
FDPF320N06L

FDPF320N06L

N-CHANNEL LOGIC LEVEL POWERTRENC

onsemi
3,015 -

RFQ

FDPF320N06L

Ficha técnica

Bulk PowerTrench® Active N-Channel MOSFET (Metal Oxide) 60 V 21A (Tc) 5V, 10V 25mOhm @ 21A, 10V 2.5V @ 250µA 30.2 nC @ 10 V ±20V 1470 pF @ 25 V - 26W (Tc) -55°C ~ 175°C (TJ) Through Hole
J107

J107

SMALL SIGNAL FIELD-EFFECT TRANSI

onsemi
2,265 -

RFQ

J107

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
FDS9431A-F085CT

FDS9431A-F085CT

P-CHANNEL 2.5V SPECIFIED MOSFET

onsemi
2,278 -

RFQ

FDS9431A-F085CT

Ficha técnica

Bulk Automotive, AEC-Q101 Active P-Channel MOSFET (Metal Oxide) 20 V 3.5A (Ta) - 130mOhm @ 3.5A, 4.5V 1V @ 250µA 8.5 nC @ 4.5 V ±8V 405 pF @ 10 V - 1W (Ta) -55°C ~ 150°C (TJ)
FDP032N08

FDP032N08

POWER FIELD-EFFECT TRANSISTOR, 1

onsemi
2,597 -

RFQ

FDP032N08

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 75 V 120A (Tc) 10V 3.2mOhm @ 75A, 10V 4.5V @ 250µA 220 nC @ 10 V ±20V 15160 pF @ 25 V - 375W (Tc) -55°C ~ 175°C (TJ) Through Hole
FDBL86566-F085

FDBL86566-F085

N-CHANNEL POWERTRENCH MOSFET, 60

onsemi
2,151 -

RFQ

FDBL86566-F085

Ficha técnica

Bulk Automotive, AEC-Q101, PowerTrench® Active N-Channel MOSFET (Metal Oxide) 60 V 240A (Tc) 10V 2.4mOhm @ 80A, 10V 4V @ 250µA 110 nC @ 10 V ±20V 6655 pF @ 30 V - 300W (Tj) -55°C ~ 175°C (TJ) Surface Mount
BUK9Y1R3-40HX

BUK9Y1R3-40HX

BUK9Y1R3-40H - N-CHANNEL 40V, LO

Nexperia USA Inc.
2,963 -

RFQ

Bulk * Active - - - - - - - - - - - - - -
PSMN2R0-60PS,127

PSMN2R0-60PS,127

NEXPERIA PSMN2R0-60PS - 120A, 60

NXP Semiconductors
2,363 -

RFQ

PSMN2R0-60PS,127

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 60 V 120A (Tc) 10V 2.2mOhm @ 25A, 10V 4V @ 1mA 137 nC @ 10 V ±20V 9997 pF @ 30 V - 338W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRF6614TRPBF

IRF6614TRPBF

IRF6614 - 12V-300V N-CHANNEL POW

Infineon Technologies
2,927 -

RFQ

IRF6614TRPBF

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 40 V 12.7A (Ta), 55A (Tc) 4.5V, 10V 8.3mOhm @ 12.7A, 10V 2.25V @ 250µA 29 nC @ 4.5 V ±20V 2560 pF @ 20 V - 2.1W (Ta), 42W (Tc) -40°C ~ 150°C (TJ) Surface Mount
PSMN7R0-100PS,127

PSMN7R0-100PS,127

NEXPERIA PSMN7R0 - N-CHANNEL 100

NXP Semiconductors
3,547 -

RFQ

PSMN7R0-100PS,127

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 100 V 100A (Tc) 10V 12mOhm @ 15A, 10V 4V @ 1mA 125 nC @ 10 V ±20V 6686 pF @ 50 V - 269W (Tc) - Through Hole
MCH6342-TL-H

MCH6342-TL-H

MCH6342 - SINGLE P-CHANNEL POWER

onsemi
2,952 -

RFQ

MCH6342-TL-H

Ficha técnica

Bulk - Active P-Channel MOSFET (Metal Oxide) 30 V 4.5A (Ta) 1.8V, 4.5V 73mOhm @ 2A, 4.5V - 8.6 nC @ 4.5 V ±10V 650 pF @ 10 V - 1.5W (Ta) 150°C (TJ) Surface Mount
1500+
1500+ Média diária de RFQ
20,000.000
20,000.000 Unidade padrão do produto
1800+
1800+ Fabricantes em todo o mundo
15,000+
15,000+ Armazém em estoque
Fudong Communication (Shenzhen) Grupo Co., Ltd.

Início

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Produto

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Telefone

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Usuário