Transistores - FETs, MOSFETs - Único

Foto: Número da peça do fabricante Disponibilidade Preço Quantidade Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
FDMC9430L-F085

FDMC9430L-F085

DUAL N-CHANNEL LOGIC LEVEL POWER

onsemi
2,118 -

RFQ

Bulk * Active - - - - - - - - - - - - - -
IPN80R2K0P7ATMA1

IPN80R2K0P7ATMA1

LOW POWER_NEW

Infineon Technologies
3,734 -

RFQ

IPN80R2K0P7ATMA1

Ficha técnica

Bulk CoolMOS™ P7 Active N-Channel MOSFET (Metal Oxide) 800 V 3A (Tc) 10V 2Ohm @ 940mA, 10V 3.5V @ 50µA 9 nC @ 10 V ±20V 175 pF @ 500 V - 6W (Tc) -55°C ~ 150°C (TJ) Surface Mount
AUIRF1010EZS

AUIRF1010EZS

AUIRF1010 - 55V-60V N-CHANNEL AU

Infineon Technologies
2,317 -

RFQ

AUIRF1010EZS

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 60 V 75A (Tc) 10V 8.5mOhm @ 51A, 10V 4V @ 250µA 86 nC @ 10 V ±20V 2810 pF @ 25 V - 140W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRF6898MTRPBF

IRF6898MTRPBF

IRF6898 - 12V-300V N-CHANNEL POW

Infineon Technologies
2,383 -

RFQ

IRF6898MTRPBF

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 25 V 40A (Ta), 214A (Tc) - 1.1mOhm @ 40A, 10V 2.1V @ 100µA 68 nC @ 4.5 V ±16V 5630 pF @ 13 V Schottky Diode (Body) 2.8W (Ta), 78W (Tc) -40°C ~ 150°C (TJ) Surface Mount
PMZB950UPELYL

PMZB950UPELYL

NEXPERIA PMZB950UPEL - 20 V, P-C

NXP Semiconductors
2,964 -

RFQ

PMZB950UPELYL

Ficha técnica

Bulk - Active P-Channel MOSFET (Metal Oxide) 20 V 500mA (Ta) 1.2V, 4.5V 1.4Ohm @ 500mA, 4.5V 950mV @ 250µA 2.1 nC @ 4.5 V ±8V 43 pF @ 10 V - 360mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
SPP11N60C3XKSA1

SPP11N60C3XKSA1

LOW POWER_LEGACY

Infineon Technologies
3,669 -

RFQ

SPP11N60C3XKSA1

Ficha técnica

Bulk CoolMOS™ Active N-Channel MOSFET (Metal Oxide) 650 V 11A (Tc) 10V 380mOhm @ 7A, 10V 3.9V @ 500µA 60 nC @ 10 V ±20V 1200 pF @ 25 V - 125W (Tc) -55°C ~ 150°C (TJ) Through Hole
FDS8878-F123

FDS8878-F123

N-CHANNEL POWERTRENCH MOSFET 30V

onsemi
3,455 -

RFQ

FDS8878-F123

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
BUK625R0-40C,118

BUK625R0-40C,118

NEXPERIA BUK625R0-40C - 90A, 40V

NXP Semiconductors
2,267 -

RFQ

BUK625R0-40C,118

Ficha técnica

Bulk Automotive, AEC-Q101, TrenchMOS™ Active N-Channel MOSFET (Metal Oxide) 40 V 90A (Ta) - 5mOhm @ 25A, 10V 2.8V @ 1mA 88 nC @ 10 V ±16V 5200 pF @ 25 V - 158W (Ta) -55°C ~ 175°C (TJ) Surface Mount
BUK7M11-40HX

BUK7M11-40HX

BUK7M11-40H - N-CHANNEL 40V, STA

Nexperia USA Inc.
2,969 -

RFQ

Bulk Automotive, AEC-Q101 Active N-Channel MOSFET (Metal Oxide) 40 V 35A (Ta) 10V 11mOhm @ 10A, 10V 3.6V @ 1mA 16 nC @ 10 V +20V, -10V 1022 pF @ 25 V - 50W (Ta) -55°C ~ 175°C (TJ) Surface Mount
IPN70R1K4P7SATMA1

IPN70R1K4P7SATMA1

CONSUMER

Infineon Technologies
2,044 -

RFQ

IPN70R1K4P7SATMA1

Ficha técnica

Bulk CoolMOS™ P7 Active N-Channel MOSFET (Metal Oxide) 700 V 4A (Tc) 10V 1.4Ohm @ 700mA, 10V 3.5V @ 40µA 4.7 nC @ 10 V ±16V 158 pF @ 400 V - 6.2W (Tc) -40°C ~ 150°C (TJ) Surface Mount
FDG6318P

FDG6318P

DUAL P-CHANNEL, DIGITAL FET -20

onsemi
3,313 -

RFQ

FDG6318P

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
HUF76113T3ST

HUF76113T3ST

4.7 A, 30 V, 0.031 OHM, N-CHANNE

Harris Corporation
2,435 -

RFQ

HUF76113T3ST

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
FDMS8350LET40

FDMS8350LET40

FDMS8350LET40 - N-CHANNEL POWERT

Fairchild Semiconductor
2,233 -

RFQ

Bulk PowerTrench® Obsolete N-Channel MOSFET (Metal Oxide) 40 V 49A (Ta), 300A (Tc) 4.5V, 10V 0.85mOhm @ 47A, 10V 3V @ 250µA 219 nC @ 10 V ±20V 16590 pF @ 20 V - 3.33W (Ta), 125W (Tc) -55°C ~ 175°C (TJ) Surface Mount
NTMFS5C442NLTWFT1G

NTMFS5C442NLTWFT1G

NTMFS5C442NLT - SINGLE N-CHANNEL

onsemi
3,861 -

RFQ

Bulk - Obsolete N-Channel MOSFET (Metal Oxide) 40 V 28A (Ta) 4.5V, 10V 2.5mOhm @ 50A, 10V 2V @ 250µA 50 nC @ 10 V ±20V 3100 pF @ 25 V - 3.7W (Ta) -55°C ~ 175°C (TJ) Surface Mount
2SJ607-ZJ-AZ

2SJ607-ZJ-AZ

2SJ607-ZJ-AZ - SWITCHING P-CHANN

Renesas
2,608 -

RFQ

Bulk - Obsolete P-Channel MOSFET (Metal Oxide) 60 V 83A (Tc) 4V, 10V 11mOhm @ 42A, 10V 2.5V @ 1mA 188 nC @ 10 V ±20V 7500 pF @ 10 V - 1.5W (Ta), 160W (Tc) 150°C Surface Mount
FDMS86104

FDMS86104

N-CHANNEL SHIELDED GATE POWERTRE

Fairchild Semiconductor
3,456 -

RFQ

Bulk PowerTrench® Obsolete N-Channel MOSFET (Metal Oxide) 100 V 7A (Ta), 16A (Tc) 6V, 10V 24mOhm @ 7A, 10V 4V @ 250µA 16 nC @ 10 V ±20V 923 pF @ 50 V - 2.5W (Ta), 73W (Tc) -55°C ~ 150°C (TJ) Surface Mount
2SJ197-T1-AZ

2SJ197-T1-AZ

2SJ197-T1-AZ - P-CHANNEL MOS FET

Renesas
3,455 -

RFQ

Bulk - Obsolete P-Channel MOSFET (Metal Oxide) 60 V 1.5A (Ta) 4V, 10V 1Ohm @ 500mA, 10V 3V @ 1mA - ±20V 220 pF @ 10 V - 2W (Ta) 150°C Surface Mount
FDT86106LZ

FDT86106LZ

FDT86106 - N-CHANNEL POWERTRENCH

Fairchild Semiconductor
2,906 -

RFQ

Bulk PowerTrench® Obsolete N-Channel MOSFET (Metal Oxide) 100 V 3.2A (Ta) 4.5V, 10V 108mOhm @ 3.2A, 10V 2.2V @ 250µA 7 nC @ 10 V ±20V 315 pF @ 50 V - 1W (Ta) -55°C ~ 150°C (TJ) Surface Mount
N0302P-T1-AT

N0302P-T1-AT

N0302P-T1-AT - MOSFET N-CHANNEL

Renesas
2,165 -

RFQ

Bulk - Obsolete P-Channel MOSFET (Metal Oxide) 30 V 4A (Ta) 4V, 10V 54mOhm @ 2.2A, 10V 2.5V @ 1mA 14 nC @ 10 V ±20V 620 pF @ 10 V - 200mW (Ta) 150°C Surface Mount
2SK3755-AZ

2SK3755-AZ

2SK3755-AZ - SWITCHING N-CHANNEL

Renesas
2,107 -

RFQ

Bulk - Obsolete N-Channel MOSFET (Metal Oxide) 40 V 45A (Tc) 4.5V, 10V 12mOhm @ 23A, 10V 2.5V @ 1mA 25.5 nC @ 10 V ±20V 1200 pF @ 10 V - 2W (Ta), 24W (Tc) 150°C Through Hole
1500+
1500+ Média diária de RFQ
20,000.000
20,000.000 Unidade padrão do produto
1800+
1800+ Fabricantes em todo o mundo
15,000+
15,000+ Armazém em estoque
Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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