Transistores - FETs, MOSFETs - Único

Foto: Número da peça do fabricante Disponibilidade Preço Quantidade Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
DI150N03PQ

DI150N03PQ

MOSFET, 30V, 150A, 86W

Diotec Semiconductor
3,480 -

RFQ

DI150N03PQ

Ficha técnica

Tape & Reel (TR),Bulk - Active N-Channel MOSFET (Metal Oxide) 30 V 100A (Tc) 4.5V, 10V 1.1mOhm @ 25A, 10V 2.5V @ 250µA 37 nC @ 4.5 V ±20V 7460 pF @ 15 V - 86W (Tc) -55°C ~ 150°C (TJ) Surface Mount
DI110N03PQ

DI110N03PQ

MOSFET, 30V, 110A, 56W

Diotec Semiconductor
3,202 -

RFQ

DI110N03PQ

Ficha técnica

Tape & Reel (TR),Bulk - Active N-Channel MOSFET (Metal Oxide) 30 V 110A (Tc) 4.5V, 10V 2.65mOhm @ 20A, 10V 2.5V @ 250µA 14 nC @ 4.5 V ±20V 7462 pF @ 15 V - 56W (Tc) -55°C ~ 150°C (TJ) Surface Mount
DI080N06PQ

DI080N06PQ

MOSFET, 60V, 80A, 80W

Diotec Semiconductor
3,569 -

RFQ

DI080N06PQ

Ficha técnica

Tape & Reel (TR),Bulk - Active N-Channel MOSFET (Metal Oxide) 60 V 80A (Tc) 4.5V, 10V 3.6mOhm @ 40A, 10V 3V @ 250µA 56 nC @ 10 V ±20V 4128 pF @ 30 V - 80W (Tc) -55°C ~ 150°C (TJ) Surface Mount
DI040P04D1-AQ

DI040P04D1-AQ

MOSFET -40V -40A P 52W

Diotec Semiconductor
2,238 -

RFQ

DI040P04D1-AQ

Ficha técnica

Tape & Reel (TR),Tape & Reel (TR) Automotive, AEC-Q101 Active P-Channel MOSFET (Metal Oxide) 40 V 40A (Tc) 4.5V, 10V 15mOhm @ 10A, 10V 2.5V @ 250µA 59 nC @ 10 V ±20V 3538 pF @ 20 V - 52W (Tc) -55°C ~ 150°C (TJ) Surface Mount
BUK9275-100A,118

BUK9275-100A,118

NOW NEXPERIA BUK9275-100A - 21.7

NXP Semiconductors
2,485 -

RFQ

BUK9275-100A,118

Ficha técnica

Bulk Automotive, AEC-Q101, TrenchMOS™ Active N-Channel MOSFET (Metal Oxide) 100 V 21.7A (Tc) 4.5V, 10V 72mOhm @ 10A, 10V 2V @ 1mA - ±10V 1690 pF @ 25 V - 88W (Tc) -55°C ~ 175°C (TJ) Surface Mount
SPP17N80C3XKSA1

SPP17N80C3XKSA1

LOW POWER_LEGACY

Infineon Technologies
3,712 -

RFQ

SPP17N80C3XKSA1

Ficha técnica

Bulk CoolMOS™ Active N-Channel MOSFET (Metal Oxide) 800 V 17A (Tc) 10V 290mOhm @ 11A, 10V 3.9V @ 1mA 177 nC @ 10 V ±20V 2320 pF @ 25 V - 208W (Tc) -55°C ~ 150°C (TJ) Through Hole
FDMC8015L

FDMC8015L

POWER FIELD-EFFECT TRANSISTOR, 7

onsemi
3,103 -

RFQ

FDMC8015L

Ficha técnica

Bulk PowerTrench® Active N-Channel MOSFET (Metal Oxide) 40 V 7A (Ta), 18A (Tc) 4.5V, 10V 26mOhm @ 7A, 10V 3V @ 250µA 19 nC @ 10 V ±20V 945 pF @ 20 V - 2.3W (Ta), 24W (Tc) -55°C ~ 150°C (TJ) Surface Mount
PSMN005-75B,118

PSMN005-75B,118

N-CHANNEL TRENCHMOS SILICONMAX S

Nexperia USA Inc.
2,378 -

RFQ

Bulk TrenchMOS™ Active N-Channel MOSFET (Metal Oxide) 75 V 75A (Tc) 10V 5mOhm @ 25A, 10V 4V @ 1mA 165 nC @ 10 V ±20V 8250 pF @ 25 V - 230W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRF6636TRPBF

IRF6636TRPBF

IRF6636 - 12V-300V N-CHANNEL POW

Infineon Technologies
2,581 -

RFQ

IRF6636TRPBF

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 20 V 18A (Ta), 81A (Tc) 4.5V, 10V 4.5mOhm @ 18A, 10V 2.45V @ 250µA 27 nC @ 4.5 V ±20V 2420 pF @ 10 V - 2.2W (Ta), 42W (Tc) -40°C ~ 150°C (TJ) Surface Mount
FCP36N60N

FCP36N60N

POWER MOSFET, N-CHANNEL, SUPREMO

onsemi
3,773 -

RFQ

Bulk SupreMOS™ Active N-Channel MOSFET (Metal Oxide) 600 V 36A (Tc) 10V 90mOhm @ 18A, 10V 4V @ 250µA 112 nC @ 10 V ±30V 4785 pF @ 100 V - 312W (Tc) -55°C ~ 150°C (TJ) Through Hole
FQA19N60

FQA19N60

POWER FIELD-EFFECT TRANSISTOR, 1

onsemi
3,120 -

RFQ

FQA19N60

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 600 V 18.5A (Tc) 10V 380mOhm @ 9.3A, 10V 5V @ 250µA 90 nC @ 10 V ±30V 3600 pF @ 25 V - 300W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPB019N08N5ATMA1

IPB019N08N5ATMA1

TRENCH 40<-<100V

Infineon Technologies
2,282 -

RFQ

IPB019N08N5ATMA1

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
PMCM4401VNE/S500Z

PMCM4401VNE/S500Z

NEXPERIA PMCM4401VNE - 12V, N-CH

NXP Semiconductors
2,050 -

RFQ

PMCM4401VNE/S500Z

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
FCD5N60-F085

FCD5N60-F085

FCD5N60_F085 - N-CHANNEL SUPERFE

onsemi
3,406 -

RFQ

FCD5N60-F085

Ficha técnica

Bulk Automotive, AEC-Q101, SuperFET™ Active N-Channel MOSFET (Metal Oxide) 600 V 4.6A (Tc) 10V 1.1Ohm @ 4.6A, 10V 5V @ 250µA 21 nC @ 10 V ±30V 570 pF @ 25 V - 54W (Tj) -55°C ~ 150°C (TJ) Surface Mount
NTMD4184PFR2G

NTMD4184PFR2G

DUAL P-CHANNEL FETKY POWER MOSFE

onsemi
2,878 -

RFQ

NTMD4184PFR2G

Ficha técnica

Bulk - Active P-Channel MOSFET (Metal Oxide) 30 V 2.3A (Ta) 4.5V, 10V 95mOhm @ 3A, 10V 3V @ 250µA 4.2 nC @ 4.5 V ±20V 360 pF @ 10 V Schottky Diode (Isolated) 770mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
NDS355AN-NB9L007A

NDS355AN-NB9L007A

NDS355AN - N-CHANNEL LOGIC LEVEL

Fairchild Semiconductor
2,170 -

RFQ

NDS355AN-NB9L007A

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 30 V 1.7A (Ta) 4.5V, 10V 85mOhm @ 1.9A, 10V 2V @ 250µA 5 nC @ 5 V ±20V 195 pF @ 15 V - 500mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
IPL60R180P6AUMA1

IPL60R180P6AUMA1

HIGH POWER_LEGACY

Infineon Technologies
2,219 -

RFQ

IPL60R180P6AUMA1

Ficha técnica

Bulk CoolMOS™ P6 Active N-Channel MOSFET (Metal Oxide) 600 V 22.4A (Tc) 10V 180mOhm @ 9A, 10V 4.5V @ 750µA 44 nC @ 10 V ±20V 2080 pF @ 100 V - 176W (Tc) -40°C ~ 150°C (TJ) Surface Mount
IPW65R041CFDFKSA2

IPW65R041CFDFKSA2

HIGH POWER_LEGACY

Infineon Technologies
2,583 -

RFQ

IPW65R041CFDFKSA2

Ficha técnica

Bulk CoolMOS™ CFD2 Active N-Channel MOSFET (Metal Oxide) 650 V 68.5A (Tc) 10V 41mOhm @ 33.1A, 10V 4.5V @ 3.3mA 300 nC @ 10 V ±20V 8400 pF @ 100 V - 500W (Tc) -55°C ~ 150°C (TJ) Through Hole
ISZ019N03L5SATMA1

ISZ019N03L5SATMA1

TRENCH <= 40V

Infineon Technologies
2,260 -

RFQ

ISZ019N03L5SATMA1

Ficha técnica

Bulk OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 30 V 22A (Ta), 40A (Tc) 4.5V, 10V 1.9mOhm @ 20A, 10V 2V @ 250µA 44 nC @ 10 V ±20V 2800 pF @ 15 V - - -55°C ~ 150°C (TJ) Surface Mount
AUIRF3205Z

AUIRF3205Z

AUIRF3205Z - 55V-60V N-CHANNEL A

Infineon Technologies
3,551 -

RFQ

AUIRF3205Z

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 55 V 75A (Tc) 10V 6.5mOhm @ 66A, 10V 4V @ 250µA 110 nC @ 10 V ±20V 3450 pF @ 25 V - 170W (Tc) -55°C ~ 175°C (TJ) Through Hole
1500+
1500+ Média diária de RFQ
20,000.000
20,000.000 Unidade padrão do produto
1800+
1800+ Fabricantes em todo o mundo
15,000+
15,000+ Armazém em estoque
Fudong Communication (Shenzhen) Grupo Co., Ltd.

Início

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Produto

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Telefone

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Usuário