Transistores - FETs, MOSFETs - Único

Foto: Número da peça do fabricante Disponibilidade Preço Quantidade Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IRF7468PBF

IRF7468PBF

MOSFET N-CH 40V 9.4A 8SO

International Rectifier
2,106 -

RFQ

IRF7468PBF

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 40 V 9.4A (Ta) 4.5V, 10V 15.5mOhm @ 9.4A, 10V 2V @ 250µA 34 nC @ 4.5 V ±12V 2460 pF @ 20 V - 2.5W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IRFP7530PBF

IRFP7530PBF

IRFP7530 - 12V-300V N-CHANNEL PO

International Rectifier
3,197 -

RFQ

IRFP7530PBF

Ficha técnica

Bulk HEXFET®, StrongIRFET™ Active N-Channel MOSFET (Metal Oxide) 60 V 195A (Tc) 6V, 10V 2mOhm @ 100A, 10V 3.7V @ 250µA 411 nC @ 10 V ±20V 13703 pF @ 25 V - 341W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRFR4615PBF

IRFR4615PBF

MOSFET N-CH 150V 33A DPAK

International Rectifier
3,667 -

RFQ

IRFR4615PBF

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 150 V 33A (Tc) 10V 42mOhm @ 21A, 10V 5V @ 100µA 26 nC @ 10 V ±20V 1750 pF @ 50 V - 144W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFS7730PBF

IRFS7730PBF

MOSFET N-CH 75V 195A D2PAK

International Rectifier
2,745 -

RFQ

IRFS7730PBF

Ficha técnica

Bulk HEXFET®, StrongIRFET™ Active N-Channel MOSFET (Metal Oxide) 75 V 195A (Tc) 6V, 10V 2.6mOhm @ 100A, 10V 3.7V @ 250µA 407 nC @ 10 V ±20V 13660 pF @ 25 V - 375W (Tc) -55°C ~ 175°C (TJ) Surface Mount
FDMA8884

FDMA8884

MOSFET N-CH 30V 6.5/8A 6MICROFET

Fairchild Semiconductor
2,723 -

RFQ

FDMA8884

Ficha técnica

Bulk PowerTrench® Active N-Channel MOSFET (Metal Oxide) 30 V 6.5A (Ta), 8A (Tc) 4.5V, 10V 23mOhm @ 6.5A, 10V 3V @ 250µA 7.5 nC @ 10 V ±20V 450 pF @ 15 V - 1.9W (Ta) -55°C ~ 150°C (TJ) Surface Mount
FQA9P25

FQA9P25

POWER FIELD-EFFECT TRANSISTOR, 1

Fairchild Semiconductor
3,378 -

RFQ

Bulk QFET® Active P-Channel MOSFET (Metal Oxide) 250 V 10.5A (Tc) 10V 620mOhm @ 5.25A, 10V 5V @ 250µA 38 nC @ 10 V ±30V 1180 pF @ 25 V - 150W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFU3410PBF

IRFU3410PBF

MOSFET N-CH 100V 31A IPAK

International Rectifier
2,723 -

RFQ

IRFU3410PBF

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 100 V 31A (Tc) 10V 39mOhm @ 18A, 10V 4V @ 250µA 56 nC @ 10 V ±20V 1690 pF @ 25 V - 3W (Ta), 110W (Tc) -55°C ~ 175°C (TJ) Through Hole
FDMC8015L

FDMC8015L

POWER FIELD-EFFECT TRANSISTOR, 7

Fairchild Semiconductor
3,482 -

RFQ

FDMC8015L

Ficha técnica

Bulk PowerTrench® Active N-Channel MOSFET (Metal Oxide) 40 V 7A (Ta), 18A (Tc) 4.5V, 10V 26mOhm @ 7A, 10V 3V @ 250µA 19 nC @ 10 V ±20V 945 pF @ 20 V - 2.3W (Ta), 24W (Tc) -55°C ~ 150°C (TJ) Surface Mount
FDMC86320

FDMC86320

POWER FIELD-EFFECT TRANSISTOR, 1

Fairchild Semiconductor
3,238 -

RFQ

FDMC86320

Ficha técnica

Bulk PowerTrench® Active N-Channel MOSFET (Metal Oxide) 80 V 10.7A (Ta), 22A (Tc) 8V, 10V 11.7mOhm @ 10.7A, 10V 4.5V @ 250µA 41 nC @ 10 V ±20V 2640 pF @ 40 V - 2.3W (Ta), 40W (Tc) -55°C ~ 150°C (TJ) Surface Mount
FDMC8327L

FDMC8327L

POWER FIELD-EFFECT TRANSISTOR, 1

Fairchild Semiconductor
3,745 -

RFQ

FDMC8327L

Ficha técnica

Bulk PowerTrench® Active N-Channel MOSFET (Metal Oxide) 40 V 12A (Ta), 14A (Tc) 4.5V, 10V 9.7mOhm @ 12A, 10V 3V @ 250µA 26 nC @ 10 V ±20V 1850 pF @ 20 V - 2.3W (Ta), 30W (Tc) -55°C ~ 150°C (TJ) Surface Mount
FQB8P10TM

FQB8P10TM

POWER FIELD-EFFECT TRANSISTOR, 8

Fairchild Semiconductor
3,013 -

RFQ

FQB8P10TM

Ficha técnica

Bulk QFET® Active P-Channel MOSFET (Metal Oxide) 100 V 8A (Tc) 10V 530mOhm @ 4A, 10V 4V @ 250µA 15 nC @ 10 V ±30V 470 pF @ 25 V - 3.75W (Ta), 65W (Tc) -55°C ~ 175°C (TJ) Surface Mount
DI050N04PT

DI050N04PT

MOSFET, 40V, 50A, 37W

Diotec Semiconductor
3,830 -

RFQ

DI050N04PT

Ficha técnica

Tape & Reel (TR),Tape & Reel (TR) - Active N-Channel MOSFET (Metal Oxide) 40 V 50A (Tc) 4.5V, 10V 6.5mOhm @ 10A, 10V 2.5V @ 250µA 59 nC @ 10 V ±20V 3255 pF @ 25 V - 37W (Tc) -55°C ~ 150°C (TJ) Surface Mount
FDS9435A

FDS9435A

SMALL SIGNAL FIELD-EFFECT TRANSI

Fairchild Semiconductor
2,112 -

RFQ

FDS9435A

Ficha técnica

Bulk PowerTrench® Active P-Channel MOSFET (Metal Oxide) 30 V 5.3A (Ta) 4.5V, 10V 50mOhm @ 5.3A, 10V 3V @ 250µA 14 nC @ 10 V ±25V 528 pF @ 15 V - 2.5W (Ta) -55°C ~ 175°C (TJ) Surface Mount
FDMS7558S

FDMS7558S

MOSFET N-CH 25V 32A/49A 8PQFN

Fairchild Semiconductor
3,069 -

RFQ

FDMS7558S

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 25 V 32A (Ta), 49A (Tc) 4.5V, 10V 1.25mOhm @ 32A, 10V 3V @ 1mA 119 nC @ 10 V ±20V 7770 pF @ 13 V - 2.5W (Ta), 89W (Tc) -55°C ~ 150°C (TJ) Surface Mount
FQP11P06

FQP11P06

POWER FIELD-EFFECT TRANSISTOR, 1

Fairchild Semiconductor
3,009 -

RFQ

FQP11P06

Ficha técnica

Bulk QFET® Active P-Channel MOSFET (Metal Oxide) 60 V 11.4A (Tc) 10V 175mOhm @ 5.7A, 10V 4V @ 250µA 17 nC @ 10 V ±25V 550 pF @ 25 V - 53W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRLR7833TRPBF

IRLR7833TRPBF

IRLR7833 - 12V-300V N-CHANNEL PO

International Rectifier
3,840 -

RFQ

IRLR7833TRPBF

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 30 V 140A (Tc) 4.5V, 10V 4.5mOhm @ 15A, 10V 2.3V @ 250µA 50 nC @ 4.5 V ±20V 4010 pF @ 15 V - 140W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRLS4030PBF

IRLS4030PBF

MOSFET N-CH 100V 180A D2PAK

International Rectifier
2,170 -

RFQ

IRLS4030PBF

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 100 V 180A (Tc) 4.5V, 10V 4.3mOhm @ 110A, 10V 2.5V @ 250µA 130 nC @ 4.5 V ±16V 11360 pF @ 50 V - 370W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPP220N25NFD

IPP220N25NFD

MOSFET N-CH 250V 61A TO220-3

Infineon Technologies
3,331 -

RFQ

IPP220N25NFD

Ficha técnica

Bulk OptiMOS™FD Active N-Channel MOSFET (Metal Oxide) 250 V 61A (Tc) - 22mOhm @ 61A, 10V 4V @ 270µA 86 nC @ 10 V ±20V 7076 pF @ 125 V - 300W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRF7404TRPBF

IRF7404TRPBF

MOSFET P-CH 20V 6.7A 8SO

International Rectifier
2,146 -

RFQ

IRF7404TRPBF

Ficha técnica

Bulk HEXFET® Active P-Channel MOSFET (Metal Oxide) 20 V 6.7A (Ta) 2.7V, 4.5V 40mOhm @ 3.2A, 4.5V 700mV @ 250µA (Min) 50 nC @ 4.5 V ±12V 1500 pF @ 15 V - 2.5W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IRF7749L2TRPBF

IRF7749L2TRPBF

IRF7749 - 12V-300V N-CHANNEL POW

International Rectifier
2,734 -

RFQ

IRF7749L2TRPBF

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 60 V 33A (Ta), 375A (Tc) 10V 1.5mOhm @ 120A, 10V 4V @ 250µA 300 nC @ 10 V ±20V 12320 pF @ 25 V - 3.3W (Ta), 125W (Tc) -55°C ~ 175°C (TJ) Surface Mount
1500+
1500+ Média diária de RFQ
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20,000.000 Unidade padrão do produto
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1800+ Fabricantes em todo o mundo
15,000+
15,000+ Armazém em estoque
Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

Produto

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Telefone

Fudong Communication (Shenzhen) Grupo Co., Ltd.

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