Transistores - FETs, MOSFETs - Único

Foto: Número da peça do fabricante Disponibilidade Preço Quantidade Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
FDMA530PZ

FDMA530PZ

POWER FIELD-EFFECT TRANSISTOR, 6

Fairchild Semiconductor
3,295 -

RFQ

FDMA530PZ

Ficha técnica

Bulk PowerTrench® Active P-Channel MOSFET (Metal Oxide) 30 V 6.8A (Ta) 4.5V, 10V 35mOhm @ 6.8A, 10V 3V @ 250µA 24 nC @ 10 V ±25V 1070 pF @ 15 V - 2.4W (Ta) -55°C ~ 150°C (TJ) Surface Mount
FDMC8588

FDMC8588

POWER FIELD-EFFECT TRANSISTOR, 1

Fairchild Semiconductor
2,656 -

RFQ

FDMC8588

Ficha técnica

Bulk PowerTrench® Active N-Channel MOSFET (Metal Oxide) 25 V 16.5A (Ta), 40A (Tc) 4.5V, 10V 5mOhm @ 17A, 10V 1.8V @ 250µA 12 nC @ 4.5 V ±12V 1228 pF @ 13 V - 2.4W (Ta), 26W (Tc) -55°C ~ 150°C (TJ) Surface Mount
FDME910PZT

FDME910PZT

SMALL SIGNAL FIELD-EFFECT TRANSI

Fairchild Semiconductor
3,394 -

RFQ

FDME910PZT

Ficha técnica

Bulk PowerTrench® Active P-Channel MOSFET (Metal Oxide) 20 V 8A (Ta) 1.8V, 4.5V 24mOhm @ 8A, 4.5V 1.5V @ 250µA 21 nC @ 4.5 V ±8V 2110 pF @ 10 V - 2.1W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IRF141

IRF141

28A, 80V, 0.077OHM, N-CHANNEL PO

International Rectifier
3,003 -

RFQ

IRF141

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
FDD6N50TM

FDD6N50TM

MOSFET N-CH 500V 6A DPAK

Fairchild Semiconductor
2,831 -

RFQ

FDD6N50TM

Ficha técnica

Bulk UniFET™ Active N-Channel MOSFET (Metal Oxide) 500 V 6A (Tc) 10V 900mOhm @ 3A, 10V 5V @ 250µA 16.6 nC @ 10 V ±30V 9400 pF @ 25 V - 89W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRF142

IRF142

25A, 100V, 0.1OHM, N-CHANNEL POW

International Rectifier
3,147 -

RFQ

IRF142

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
IRL60HS118

IRL60HS118

IRL60HS118 - 12V-300V N-CHANNEL

International Rectifier
3,241 -

RFQ

IRL60HS118

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 60 V 18.5A (Tc) 4.5V, 10V 17mOhm @ 11A, 10V 2.3V @ 10µA 8 nC @ 4.5 V ±20V 660 pF @ 25 V - 11.5W (Tc) -55°C ~ 175°C (TJ) Surface Mount
FQP3P50

FQP3P50

POWER FIELD-EFFECT TRANSISTOR, 2

Fairchild Semiconductor
2,766 -

RFQ

FQP3P50

Ficha técnica

Bulk QFET® Active P-Channel MOSFET (Metal Oxide) 500 V 2.7A (Tc) 10V 4.9Ohm @ 1.35A, 10V 5V @ 250µA 23 nC @ 10 V ±30V 660 pF @ 25 V - 85W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFP4321PBF

IRFP4321PBF

IRFP4321 - 12V-300V N-CHANNEL PO

International Rectifier
2,108 -

RFQ

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 150 V 78A (Tc) 10V 15.5mOhm @ 33A, 10V 5V @ 250µA 110 nC @ 10 V ±30V 4460 pF @ 25 V - 310W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPP062NE7N3G

IPP062NE7N3G

IPP062NE7 - 12V-300V N-CHANNEL P

Infineon Technologies
2,240 -

RFQ

IPP062NE7N3G

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
IRFP4227PBF

IRFP4227PBF

IRFP4227 - 12V-300V N-CHANNEL PO

International Rectifier
2,875 -

RFQ

IRFP4227PBF

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 200 V 65A (Tc) 10V 25mOhm @ 46A, 10V 5V @ 250µA 98 nC @ 10 V ±30V 4600 pF @ 25 V - 330W (Tc) -40°C ~ 175°C (TJ) Through Hole
FDPF18N20FT

FDPF18N20FT

POWER FIELD-EFFECT TRANSISTOR, 1

Fairchild Semiconductor
3,654 -

RFQ

FDPF18N20FT

Ficha técnica

Bulk UniFET™ Active N-Channel MOSFET (Metal Oxide) 200 V 18A (Tc) 10V 140mOhm @ 9A, 10V 5V @ 250µA 26 nC @ 10 V ±30V 1180 pF @ 25 V - 41W (Tc) -55°C ~ 150°C (TJ) Through Hole
SPD04P10PG

SPD04P10PG

SPD04P10 - 20V-250V P-CHANNEL PO

Infineon Technologies
3,646 -

RFQ

SPD04P10PG

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
FDP3632

FDP3632

POWER FIELD-EFFECT TRANSISTOR, 1

Fairchild Semiconductor
3,268 -

RFQ

FDP3632

Ficha técnica

Bulk PowerTrench® Active N-Channel MOSFET (Metal Oxide) 100 V 12A (Ta), 80A (Tc) 6V, 10V 9mOhm @ 80A, 10V 4V @ 250µA 110 nC @ 10 V ±20V 6000 pF @ 25 V - 310W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPD040N03LG

IPD040N03LG

OPTLMOS N-CHANNEL POWER MOSFET

Infineon Technologies
3,401 -

RFQ

IPD040N03LG

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
FQB8N90CTM

FQB8N90CTM

MOSFET N-CH 900V 6.3A D2PAK

Fairchild Semiconductor
3,200 -

RFQ

FQB8N90CTM

Ficha técnica

Bulk QFET® Active N-Channel MOSFET (Metal Oxide) 900 V 6.3A (Tc) 10V 1.9Ohm @ 3.15A, 10V 5V @ 250µA 45 nC @ 10 V ±30V 2080 pF @ 25 V - 171W (Tc) -55°C ~ 150°C (TJ) Surface Mount
FDS8896

FDS8896

POWER FIELD-EFFECT TRANSISTOR, 1

Fairchild Semiconductor
3,800 -

RFQ

FDS8896

Ficha técnica

Bulk PowerTrench® Active N-Channel MOSFET (Metal Oxide) 30 V 15A (Ta) 4.5V, 10V 6mOhm @ 15A, 10V 2.5V @ 250µA 67 nC @ 10 V ±20V 2525 pF @ 15 V - 2.5W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IRF7420PBF

IRF7420PBF

MOSFET P-CH 12V 11.5A 8SO

International Rectifier
3,399 -

RFQ

IRF7420PBF

Ficha técnica

Bulk HEXFET® Active P-Channel MOSFET (Metal Oxide) 12 V 11.5A (Tc) 1.8V, 4.5V 14mOhm @ 11.5A, 4.5V 900mV @ 250µA 38 nC @ 4.5 V ±8V 3529 pF @ 10 V - 2.5W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IPP50R380CE

IPP50R380CE

POWER FIELD-EFFECT TRANSISTOR, 5

Infineon Technologies
3,595 -

RFQ

IPP50R380CE

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
IPP50R190CE

IPP50R190CE

POWER FIELD-EFFECT TRANSISTOR, 5

Infineon Technologies
3,778 -

RFQ

IPP50R190CE

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
1500+
1500+ Média diária de RFQ
20,000.000
20,000.000 Unidade padrão do produto
1800+
1800+ Fabricantes em todo o mundo
15,000+
15,000+ Armazém em estoque
Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

Telefone

Fudong Communication (Shenzhen) Grupo Co., Ltd.

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