Transistores - FETs, MOSFETs - Único

Foto: Número da peça do fabricante Disponibilidade Preço Quantidade Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
FDMS8670S

FDMS8670S

MOSFET N-CH 30V 20A/42A 8PQFN

Fairchild Semiconductor
2,702 -

RFQ

FDMS8670S

Ficha técnica

Bulk PowerTrench®, SyncFET™ Active N-Channel MOSFET (Metal Oxide) 30 V 20A (Ta), 42A (Tc) 4.5V, 10V 3.5mOhm @ 20A, 10V 3V @ 1mA 73 nC @ 10 V ±20V 4000 pF @ 15 V - 2.5W (Ta), 78W (Tc) -55°C ~ 150°C (TJ) Surface Mount
2N7002BK,215

2N7002BK,215

SMALL SIGNAL FIELD-EFFECT TRANSI

NXP USA Inc.
2,052 -

RFQ

2N7002BK,215

Ficha técnica

Bulk Automotive, AEC-Q101, TrenchMOS™ Active N-Channel MOSFET (Metal Oxide) 60 V 350mA (Ta) 10V 1.6Ohm @ 500mA, 10V 2.1V @ 250µA 0.6 nC @ 4.5 V ±20V 50 pF @ 10 V - 370mW (Ta) 150°C (TJ) Surface Mount
FDB2532-F085

FDB2532-F085

MOSFET N-CH 150V 79A TO263AB

Fairchild Semiconductor
2,155 -

RFQ

FDB2532-F085

Ficha técnica

Bulk Automotive, AEC-Q101, PowerTrench® Active N-Channel MOSFET (Metal Oxide) 150 V 79A (Tc) 6V, 10V 16mOhm @ 33A, 10V 4V @ 250µA 107 nC @ 10 V ±20V 5870 pF @ 25 V - 310W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFH8337TRPBF

IRFH8337TRPBF

MOSFET N-CH 30V 12A/35A PQFN

International Rectifier
2,617 -

RFQ

IRFH8337TRPBF

Ficha técnica

Bulk HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 12A (Ta), 35A (Tc) 4.5V, 10V 12.8mOhm @ 16.2A, 10V 2.35V @ 25µA 10 nC @ 10 V ±20V 790 pF @ 10 V - 3.2W (Ta), 27W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRLR7833TRLPBF

IRLR7833TRLPBF

MOSFET N-CH 30V 140A DPAK

International Rectifier
2,623 -

RFQ

IRLR7833TRLPBF

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 30 V 140A (Tc) 4.5V, 10V 4.5mOhm @ 15A, 10V 2.3V @ 250µA 50 nC @ 4.5 V ±20V 4010 pF @ 15 V - 140W (Tc) -55°C ~ 175°C (TJ) Surface Mount
FDG410NZ

FDG410NZ

MOSFET N-CH 20V 2.2A SC88

Fairchild Semiconductor
3,262 -

RFQ

FDG410NZ

Ficha técnica

Bulk PowerTrench® Active N-Channel MOSFET (Metal Oxide) 20 V 2.2A (Ta) 1.5V, 4.5V 70mOhm @ 2.2A, 4.5V 1V @ 250µA 7.2 nC @ 4.5 V ±8V 535 pF @ 10 V - 420mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
SP000797380

SP000797380

IPA60R190E6XKSA1 - POWER FIELD-E

Infineon Technologies
2,440 -

RFQ

SP000797380

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
FDB33N25TM

FDB33N25TM

POWER FIELD-EFFECT TRANSISTOR, 3

Fairchild Semiconductor
2,414 -

RFQ

FDB33N25TM

Ficha técnica

Bulk UniFET™ Active N-Channel MOSFET (Metal Oxide) 250 V 33A (Tc) 10V 94mOhm @ 16.5A, 10V 5V @ 250µA 48 nC @ 10 V ±30V 2135 pF @ 25 V - 235W (Tc) -55°C ~ 150°C (TJ) Surface Mount
GT700P08T

GT700P08T

P-80V, -25A,RD<72M@-10V,VTH-2V~-

Goford Semiconductor
100 -

RFQ

GT700P08T

Ficha técnica

Tube - Active P-Channel MOSFET (Metal Oxide) 80 V 25A (Tc) 10V 72mOhm @ 2A, 10V 3.5V @ 250µA 75 nC @ 10 V ±20V 1639 pF @ 40 V - 125W (Tc) -55°C ~ 150°C (TJ) Through Hole
PMPB43XPE,115

PMPB43XPE,115

MOSFET P-CH 20V 5A DFN2020MD-6

NXP Semiconductors
2,751 -

RFQ

Bulk - Active P-Channel MOSFET (Metal Oxide) 20 V 5A (Ta) 1.8V, 4.5V 48mOhm @ 5A, 4.5V 900mV @ 250µA 23.4 nC @ 4.5 V ±12V 1550 pF @ 10 V - 1.7W (Ta), 12.5W (Tc) -55°C ~ 150°C (TJ) Surface Mount
FDBL86363-F085

FDBL86363-F085

MOSFET N-CH 80V 240A 8HPSOF

Fairchild Semiconductor
2,513 -

RFQ

Bulk Automotive, AEC-Q101, PowerTrench® Active N-Channel MOSFET (Metal Oxide) 80 V 240A (Tc) 10V 2mOhm @ 80A, 10V 4V @ 250µA 169 nC @ 10 V ±20V 10 pF @ 40 V - 357W (Tj) -55°C ~ 175°C (TJ) Surface Mount
DI030N03D1

DI030N03D1

MOSFET, TO-252AA/D-PAK, 30V, 30A

Diotec Semiconductor
2,310 -

RFQ

DI030N03D1

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 30 V 30A (Tc) 4.5V, 10V 14mOhm @ 20A, 10V 2.2V @ 250µA 17.5 nC @ 10 V ±20V 940 pF @ 15 V - 40W (Tc) -55°C ~ 175°C (TJ) Surface Mount
FDC658P

FDC658P

SMALL SIGNAL FIELD-EFFECT TRANSI

Fairchild Semiconductor
2,011 -

RFQ

FDC658P

Ficha técnica

Bulk PowerTrench® Active P-Channel MOSFET (Metal Oxide) 30 V 4A (Ta) 10V 50mOhm @ 4A, 10V 3V @ 250µA 12 nC @ 5 V ±20V 750 pF @ 15 V - 1.6W (Ta) -55°C ~ 150°C (TJ) Surface Mount
FDD5680

FDD5680

POWER FIELD-EFFECT TRANSISTOR, 3

Fairchild Semiconductor
3,127 -

RFQ

FDD5680

Ficha técnica

Bulk PowerTrench® Active N-Channel MOSFET (Metal Oxide) 60 V 8.5A (Ta) 6V, 10V 21mOhm @ 8.5A, 10V 4V @ 250µA 46 nC @ 10 V ±20V 1835 pF @ 30 V - 2.8W (Ta), 60W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IPD14N06S2-80

IPD14N06S2-80

IPD14N06 - 55V-60V N-CHANNEL AUT

Infineon Technologies
3,601 -

RFQ

IPD14N06S2-80

Ficha técnica

Bulk * Active N-Channel MOSFET (Metal Oxide) 55 V 17A (Tc) 10V 80mOhm @ 7A, 10V 4V @ 14µA 10 nC @ 10 V ±20V 293 pF @ 25 V - 47W (Tc) -55°C ~ 175°C (TJ) Surface Mount
FDD8870

FDD8870

POWER FIELD-EFFECT TRANSISTOR, 2

Fairchild Semiconductor
2,623 -

RFQ

FDD8870

Ficha técnica

Bulk PowerTrench® Active N-Channel MOSFET (Metal Oxide) 30 V 21A (Ta), 160A (Tc) 4.5V, 10V 3.9mOhm @ 35A, 10V 2.5V @ 250µA 118 nC @ 10 V ±20V 5160 pF @ 15 V - 160W (Tc) -55°C ~ 175°C (TJ) Surface Mount
PSMN3R5-80PS

PSMN3R5-80PS

NOW NEXPERIA PSMN3R5-80PS - POWE

NXP USA Inc.
2,311 -

RFQ

PSMN3R5-80PS

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
AUIRLZ44Z

AUIRLZ44Z

MOSFET N-CH 55V 51A TO220AB

International Rectifier
3,686 -

RFQ

AUIRLZ44Z

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 55 V 51A (Tc) 4.5V, 10V 13.5mOhm @ 31A, 10V 3V @ 250µA 36 nC @ 5 V ±16V 1620 pF @ 25 V - 80W (Tc) -55°C ~ 175°C (TJ) Through Hole
GT088N06T

GT088N06T

N60V,RD(MAX)<9M@10V,RD(MAX)<13M@

Goford Semiconductor
3,764 -

RFQ

GT088N06T

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 60 V 60A (Tc) 4.5V, 10V 9mOhm @ 14A, 10V 2.4V @ 250µA 24 nC @ 10 V ±20V 1620 pF @ 30 V - 75W (Tc) -55°C ~ 150°C (TJ) Through Hole
BUK9Y65-100E,115

BUK9Y65-100E,115

TRANSISTOR >30MHZ

NXP USA Inc.
3,500 -

RFQ

BUK9Y65-100E,115

Ficha técnica

Bulk Automotive, AEC-Q101 Active N-Channel MOSFET (Metal Oxide) 100 V 19A (Tc) 5V 63.3mOhm @ 5A, 10V 2.1V @ 1mA 14 nC @ 5 V ±10V 1523 pF @ 25 V - 64W (Tc) -55°C ~ 175°C (TJ) Surface Mount
1500+
1500+ Média diária de RFQ
20,000.000
20,000.000 Unidade padrão do produto
1800+
1800+ Fabricantes em todo o mundo
15,000+
15,000+ Armazém em estoque
Fudong Communication (Shenzhen) Grupo Co., Ltd.

Início

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Produto

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Telefone

Fudong Communication (Shenzhen) Grupo Co., Ltd.

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