Transistores - FETs, MOSFETs - Único

Foto: Número da peça do fabricante Disponibilidade Preço Quantidade Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IPW65R045C7

IPW65R045C7

46A, 650V, 0.045OHM, N-CHANNEL M

Infineon Technologies
2,592 -

RFQ

IPW65R045C7

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
HUF76629D3STR4885

HUF76629D3STR4885

N-CHANNEL LOGIC LEVEL ULTRAFET P

Fairchild Semiconductor
2,930 -

RFQ

HUF76629D3STR4885

Ficha técnica

Bulk UltraFET® Active N-Channel MOSFET (Metal Oxide) 100 V 20A (Tc) 4.5V, 10V 52mOhm @ 20A, 10V 3V @ 250µA 43 nC @ 10 V ±16V 1285 pF @ 25 V - 150W (Tj) -55°C ~ 175°C (TJ) Surface Mount
AUIRFS6535TRL

AUIRFS6535TRL

MOSFET N-CH 300V 19A D2PAK

International Rectifier
2,874 -

RFQ

AUIRFS6535TRL

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 300 V 19A (Tc) 10V 185mOhm @ 11A, 10V 5V @ 150µA 57 nC @ 10 V ±20V 2340 pF @ 25 V - 210W (Tc) -55°C ~ 175°C (TJ) Surface Mount
TF412T5G

TF412T5G

SMALL SIGNAL FIELD-EFFECT TRANSI

onsemi
3,581 -

RFQ

TF412T5G

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
CPH3448-TL-W

CPH3448-TL-W

SMALL SIGNAL FIELD-EFFECT TRANSI

Texas Instruments
3,284 -

RFQ

CPH3448-TL-W

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 30 V 4A (Ta) 1.8V, 4.5V 50mOhm @ 2A, 4.5V - 4.7 nC @ 4.5 V ±12V 430 pF @ 10 V - 1W (Ta) 150°C (TJ) Surface Mount
FCH104N60

FCH104N60

POWER FIELD-EFFECT TRANSISTOR, 3

Fairchild Semiconductor
3,674 -

RFQ

FCH104N60

Ficha técnica

Bulk SuperFET® II Active N-Channel MOSFET (Metal Oxide) 600 V 37A (Tc) 10V 104mOhm @ 18.5A, 10V 3.5V @ 250µA 82 nC @ 10 V ±20V 4165 pF @ 380 V - 357W (Tc) -55°C ~ 150°C (TJ) Through Hole
FCP099N60E

FCP099N60E

MOSFET N-CH 600V 37A TO220-3

Fairchild Semiconductor
2,521 -

RFQ

FCP099N60E

Ficha técnica

Bulk SuperFET® II Active N-Channel MOSFET (Metal Oxide) 600 V 37A (Tc) 10V 99mOhm @ 18.5A, 10V 3.5V @ 250µA 114 nC @ 10 V ±20V 3465 pF @ 380 V - 357W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPP80R750P7

IPP80R750P7

IPP80R750 - 800V COOLMOS N-CHANN

Infineon Technologies
3,582 -

RFQ

Bulk - Active - - - - - - - - - - - - - -
FDS5680

FDS5680

SMALL SIGNAL FIELD-EFFECT TRANSI

Fairchild Semiconductor
2,349 -

RFQ

FDS5680

Ficha técnica

Bulk PowerTrench® Active N-Channel MOSFET (Metal Oxide) 60 V 8A (Ta) 6V, 10V 20mOhm @ 8A, 10V 4V @ 250µA 42 nC @ 10 V ±20V 1850 pF @ 15 V - 2.5W (Ta) -55°C ~ 150°C (TJ) Surface Mount
PMPB20EN,115

PMPB20EN,115

MOSFET N-CH 30V 7.2A DFN2020MD-6

NXP USA Inc.
2,997 -

RFQ

PMPB20EN,115

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 30 V 7.2A (Ta) 4.5V, 10V 19.5mOhm @ 7A, 10V 2V @ 250µA 10.8 nC @ 10 V ±20V 435 pF @ 10 V - 1.7W (Ta), 12.5W (Tc) -55°C ~ 150°C (TJ) Surface Mount
FQA90N15

FQA90N15

POWER FIELD-EFFECT TRANSISTOR, 9

Fairchild Semiconductor
3,938 -

RFQ

FQA90N15

Ficha técnica

Bulk QFET® Active N-Channel MOSFET (Metal Oxide) 150 V 90A (Tc) 10V 18mOhm @ 45A, 10V 4V @ 250µA 285 nC @ 10 V ±25V 8700 pF @ 25 V - 375W (Tc) -55°C ~ 175°C (TJ) Through Hole
FDMC7664

FDMC7664

POWER FIELD-EFFECT TRANSISTOR, 1

Fairchild Semiconductor
2,701 -

RFQ

FDMC7664

Ficha técnica

Bulk PowerTrench® Active N-Channel MOSFET (Metal Oxide) 30 V 18.8A (Ta), 24A (Tc) 4.5V, 10V 4.2mOhm @ 18.8A, 10V 3V @ 250µA 76 nC @ 10 V ±20V 4865 pF @ 15 V - 2.3W (Ta), 45W (Tc) -55°C ~ 150°C (TJ) Surface Mount
FDS8433A

FDS8433A

MOSFET P-CH 20V 5A 8SOIC

Fairchild Semiconductor
3,691 -

RFQ

FDS8433A

Ficha técnica

Bulk - Active P-Channel MOSFET (Metal Oxide) 20 V 5A (Ta) 2.5V, 4.5V 47mOhm @ 5A, 4.5V 1V @ 250µA 28 nC @ 5 V ±8V 1130 pF @ 10 V - 2.5W (Ta) -55°C ~ 150°C (TJ) Surface Mount
FDMS0302S

FDMS0302S

MOSFET N-CH 30V 29A/49A 8PQFN

Fairchild Semiconductor
2,352 -

RFQ

FDMS0302S

Ficha técnica

Bulk PowerTrench®, SyncFET™ Active N-Channel MOSFET (Metal Oxide) 30 V 29A (Ta), 49A (Tc) 4.5V, 10V 1.9mOhm @ 28A, 10V 3V @ 1mA 109 nC @ 10 V ±20V 7350 pF @ 15 V - 2.5W (Ta), 89W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IPP045N10N3G

IPP045N10N3G

POWER FIELD-EFFECT TRANSISTOR, 1

Infineon Technologies
2,686 -

RFQ

Bulk * Active - - - - - - - - - - - - - -
FQP6N80C

FQP6N80C

POWER FIELD-EFFECT TRANSISTOR, 5

Fairchild Semiconductor
2,373 -

RFQ

FQP6N80C

Ficha técnica

Bulk QFET® Active N-Channel MOSFET (Metal Oxide) 800 V 5.5A (Tc) 10V 2.5Ohm @ 2.75A, 10V 5V @ 250µA 30 nC @ 10 V ±30V 1310 pF @ 25 V - 158W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRLU7843PBF

IRLU7843PBF

MOSFET N-CH 30V 161A IPAK

International Rectifier
3,806 -

RFQ

IRLU7843PBF

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 30 V 161A (Tc) - 3.3mOhm @ 15A, 10V 2.3V @ 250µA 50 nC @ 4.5 V ±20V 4380 pF @ 15 V - 140W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPP60R165CP

IPP60R165CP

21A, 600V, 0.165OHM, N-CHANNEL M

Infineon Technologies
3,913 -

RFQ

IPP60R165CP

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
AUIRF7736M2TR

AUIRF7736M2TR

MOSFET N-CH 40V 22A/108A DIRECT

International Rectifier
2,145 -

RFQ

AUIRF7736M2TR

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 40 V 22A (Ta), 108A (Tc) 10V 3mOhm @ 65A, 10V 4V @ 150µA 108 nC @ 10 V ±20V 4267 pF @ 25 V - 2.5W (Ta), 63W (Tc) -55°C ~ 175°C (TJ) Surface Mount
AUIRFB8407

AUIRFB8407

MOSFET N-CH 40V 195A TO220AB

International Rectifier
2,985 -

RFQ

AUIRFB8407

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 40 V 195A (Tc) 10V 2mOhm @ 100A, 10V 4V @ 150µA 225 nC @ 10 V ±20V 7330 pF @ 25 V - 230W (Tc) -55°C ~ 175°C (TJ) Through Hole
1500+
1500+ Média diária de RFQ
20,000.000
20,000.000 Unidade padrão do produto
1800+
1800+ Fabricantes em todo o mundo
15,000+
15,000+ Armazém em estoque
Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

Telefone

Fudong Communication (Shenzhen) Grupo Co., Ltd.

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