Transistores - FETs, MOSFETs - Único

Foto: Número da peça do fabricante Disponibilidade Preço Quantidade Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
FQPF27N25

FQPF27N25

MOSFET N-CH 250V 14A TO220F

onsemi
1,000 -

RFQ

FQPF27N25

Ficha técnica

Tube QFET® Active N-Channel MOSFET (Metal Oxide) 250 V 14A (Tc) 10V 110mOhm @ 7A, 10V 5V @ 250µA 65 nC @ 10 V ±30V 2450 pF @ 25 V - 55W (Tc) -55°C ~ 150°C (TJ) Through Hole
STP9NM60N

STP9NM60N

MOSFET N-CH 600V 6.5A TO220AB

STMicroelectronics
680 -

RFQ

STP9NM60N

Ficha técnica

Tube MDmesh™ II Not For New Designs N-Channel MOSFET (Metal Oxide) 600 V 6.5A (Tc) 10V 745mOhm @ 3.25A, 10V 4V @ 250µA 17.4 nC @ 10 V ±25V 452 pF @ 50 V - 70W (Tc) 150°C (TJ) Through Hole
FDD3670

FDD3670

POWER FIELD-EFFECT TRANSISTOR, 3

Fairchild Semiconductor
3,669 -

RFQ

FDD3670

Ficha técnica

Bulk PowerTrench® Active N-Channel MOSFET (Metal Oxide) 100 V 34A (Ta) 6V, 10V 32mOhm @ 7.3A, 10V 4V @ 250µA 80 nC @ 10 V ±20V 2490 pF @ 50 V - 3.8W (Ta), 83W (Tc) -55°C ~ 175°C (TJ) Surface Mount
FDD850N10L

FDD850N10L

POWER FIELD-EFFECT TRANSISTOR, 1

Fairchild Semiconductor
2,996 -

RFQ

FDD850N10L

Ficha técnica

Bulk PowerTrench® Active N-Channel MOSFET (Metal Oxide) 100 V 15.7A (Tc) 5V, 10V 75mOhm @ 12A, 10V 2.5V @ 250µA 28.9 nC @ 10 V ±20V 1465 pF @ 25 V - 50W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFM120ATF

IRFM120ATF

POWER FIELD-EFFECT TRANSISTOR, 2

Fairchild Semiconductor
3,973 -

RFQ

IRFM120ATF

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 100 V 2.3A (Ta) 10V 200mOhm @ 1.15A, 10V 4V @ 250µA 22 nC @ 10 V ±20V 480 pF @ 25 V - 2.4W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IPD12CN10NG

IPD12CN10NG

OPTLMOS N-CHANNEL POWER MOSFET

Infineon Technologies
2,877 -

RFQ

IPD12CN10NG

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
IRFR3505PBF

IRFR3505PBF

MOSFET N-CH 55V 30A DPAK

International Rectifier
2,467 -

RFQ

IRFR3505PBF

Ficha técnica

Bulk HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 55 V 30A (Tc) 10V 13mOhm @ 30A, 10V 4V @ 250µA 93 nC @ 10 V ±20V 2030 pF @ 25 V - 140W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFS4227TRLPBF

IRFS4227TRLPBF

IRFS4227 - 12V-300V N-CHANNEL PO

International Rectifier
3,702 -

RFQ

IRFS4227TRLPBF

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 200 V 62A (Tc) 10V 26mOhm @ 46A, 10V 5V @ 250µA 98 nC @ 10 V ±30V 4600 pF @ 25 V - 330W (Tc) -40°C ~ 175°C (TJ) Surface Mount
IPI70R950CE

IPI70R950CE

POWER FIELD-EFFECT TRANSISTOR

Infineon Technologies
3,108 -

RFQ

IPI70R950CE

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
IPA057N06N3G

IPA057N06N3G

IPA057N06 - 12V-300V N-CHANNEL P

Infineon Technologies
2,436 -

RFQ

IPA057N06N3G

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
FDMS7578

FDMS7578

MOSFET N-CH 25V 17A/28A 8PQFN

Fairchild Semiconductor
2,855 -

RFQ

FDMS7578

Ficha técnica

Bulk PowerTrench® Active N-Channel MOSFET (Metal Oxide) 25 V 17A (Ta), 28A (Tc) 4.5V, 10V 5.8mOhm @ 17A, 10V 3V @ 250µA 25 nC @ 10 V ±20V 1625 pF @ 13 V - 2.5W (Ta), 33W (Tc) -55°C ~ 150°C (TJ) Surface Mount
FDH50N50_F133

FDH50N50_F133

MOSFET N-CH 500V 48A TO247

Fairchild Semiconductor
2,969 -

RFQ

FDH50N50_F133

Ficha técnica

Bulk UniFET™ Active N-Channel MOSFET (Metal Oxide) 500 V 48A (Tc) - 105mOhm @ 24A, 10V 5V @ 250µA 137 nC @ 10 V ±20V 6460 pF @ 25 V - 625W (Tc) -55°C ~ 150°C (TJ) Through Hole
FDPF770N15A

FDPF770N15A

POWER FIELD-EFFECT TRANSISTOR, 1

Fairchild Semiconductor
2,278 -

RFQ

FDPF770N15A

Ficha técnica

Bulk PowerTrench® Active N-Channel MOSFET (Metal Oxide) 150 V 10A (Tc) 10V 77mOhm @ 10A, 10V 4V @ 250µA 11.2 nC @ 10 V ±20V 765 pF @ 75 V - 21W (Tc) -55°C ~ 150°C (TJ) Through Hole
AUIRFZ48ZS

AUIRFZ48ZS

MOSFET N-CH 55V 61A D2PAK

International Rectifier
2,482 -

RFQ

AUIRFZ48ZS

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 55 V 61A (Tc) 10V 11mOhm @ 37A, 10V 4V @ 250µA 64 nC @ 10 V ±20V 1720 pF @ 25 V - 91W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFR6215TRPBF

IRFR6215TRPBF

IRFR6215 - 20V-250V P-CHANNEL PO

International Rectifier
3,578 -

RFQ

IRFR6215TRPBF

Ficha técnica

Bulk HEXFET® Active P-Channel MOSFET (Metal Oxide) 150 V 13A (Tc) 10V 295mOhm @ 6.6A, 10V 4V @ 250µA 66 nC @ 10 V ±20V 860 pF @ 25 V - 110W (Tc) -55°C ~ 175°C (TJ) Surface Mount
BUK7Y113-100EX

BUK7Y113-100EX

MOSFET N-CH 100V 12A LFPAK56

NXP USA Inc.
2,443 -

RFQ

BUK7Y113-100EX

Ficha técnica

Bulk TrenchMOS™ Active N-Channel MOSFET (Metal Oxide) 100 V 12A (Tc) 10V 113mOhm @ 5A, 10V 4V @ 1mA 10.4 nC @ 10 V ±20V 601 pF @ 25 V - 45W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFS4615TRLPBF

IRFS4615TRLPBF

IRFS4615 - 12V-300V N-CHANNEL PO

International Rectifier
3,481 -

RFQ

IRFS4615TRLPBF

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 150 V 33A (Tc) 10V 42mOhm @ 21A, 10V 5V @ 100µA 40 nC @ 10 V ±20V 1750 pF @ 50 V - 144W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPD80R4K5P7

IPD80R4K5P7

POWER FIELD-EFFECT TRANSISTOR

Infineon Technologies
2,078 -

RFQ

IPD80R4K5P7

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
IPG20N04S4-08

IPG20N04S4-08

IPG20N04 - 20V-40V N-CHANNEL AUT

Infineon Technologies
3,947 -

RFQ

IPG20N04S4-08

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
FDMC2512SDC

FDMC2512SDC

POWER FIELD-EFFECT TRANSISTOR, 3

Fairchild Semiconductor
3,500 -

RFQ

FDMC2512SDC

Ficha técnica

Bulk PowerTrench® Active N-Channel MOSFET (Metal Oxide) 25 V 32A (Ta), 40A (Tc) 4.5V, 10V 2mOhm @ 27A, 10V 2.5V @ 1mA 68 nC @ 10 V ±20V 4410 pF @ 13 V - 3W (Ta), 66W (Tc) -55°C ~ 150°C (TJ) Surface Mount
1500+
1500+ Média diária de RFQ
20,000.000
20,000.000 Unidade padrão do produto
1800+
1800+ Fabricantes em todo o mundo
15,000+
15,000+ Armazém em estoque
Fudong Communication (Shenzhen) Grupo Co., Ltd.

Início

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Produto

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Telefone

Fudong Communication (Shenzhen) Grupo Co., Ltd.

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