Transistores - FETs, MOSFETs - Único

Foto: Número da peça do fabricante Disponibilidade Preço Quantidade Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IPD30N06S2L13ATMA1

IPD30N06S2L13ATMA1

IPD30N06 - 55V-60V N-CHANNEL AUT

Infineon Technologies
2,885 -

RFQ

IPD30N06S2L13ATMA1

Ficha técnica

Bulk OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 55 V 30A (Tc) 4.5V, 10V 13mOhm @ 30A, 10V 2V @ 80µA 69 nC @ 10 V ±20V 1800 pF @ 25 V - 136W (Tc) -55°C ~ 175°C (TJ) Surface Mount
BUK9Y6R0-60E,115

BUK9Y6R0-60E,115

TRANSISTOR >30MHZ

NXP USA Inc.
2,728 -

RFQ

BUK9Y6R0-60E,115

Ficha técnica

Bulk Automotive, AEC-Q101, TrenchMOS™ Active N-Channel MOSFET (Metal Oxide) 60 V 100A (Tc) 5V 5.2mOhm @ 25A, 10V 2.1V @ 1mA 39.4 nC @ 5 V ±10V 6319 pF @ 25 V - 195W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPW60R190E6

IPW60R190E6

600V, 0.19OHM, N-CHANNEL MOSFET

Infineon Technologies
2,986 -

RFQ

IPW60R190E6

Ficha técnica

Bulk * Active - - - - - - - - - - - - -
IRLR3636TRPBF

IRLR3636TRPBF

IRLR3636 - 12V-300V N-CHANNEL PO

International Rectifier
2,745 -

RFQ

IRLR3636TRPBF

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 60 V 50A (Tc) 4.5V, 10V 6.8mOhm @ 50A, 10V 2.5V @ 100µA 49 nC @ 4.5 V ±16V 3779 pF @ 50 V - 143W (Tc) -55°C ~ 175°C (TJ) Surface Mount
PMV50EPEAR

PMV50EPEAR

PMV50EPEA - 30 V, P-CHANNEL TREN

NXP USA Inc.
2,766 -

RFQ

PMV50EPEAR

Ficha técnica

Bulk - Active P-Channel MOSFET (Metal Oxide) 30 V 4.2A (Ta) 4.5V, 10V 45mOhm @ 4.2A, 10V 3V @ 250µA 19.2 nC @ 10 V ±20V 793 pF @ 15 V - 310mW (Ta), 455mW (Tc) -55°C ~ 150°C (TJ) Surface Mount
BUK7Y20-30B,115

BUK7Y20-30B,115

MOSFET N-CH 30V 39.5A LFPAK56

NXP Semiconductors
3,598 -

RFQ

BUK7Y20-30B,115

Ficha técnica

Bulk Automotive, AEC-Q101, TrenchMOS™ Active N-Channel MOSFET (Metal Oxide) 30 V 39.5A (Tc) 10V 20mOhm @ 20A, 10V 4V @ 1mA 11.2 nC @ 10 V ±20V 688 pF @ 25 V - 59W (Tc) -55°C ~ 175°C (TJ) Surface Mount
FCH067N65S3-F155

FCH067N65S3-F155

POWER FIELD-EFFECT TRANSISTOR, N

Fairchild Semiconductor
3,690 -

RFQ

FCH067N65S3-F155

Ficha técnica

Bulk SuperFET® III Active N-Channel MOSFET (Metal Oxide) 650 V 44A (Tc) 10V 67mOhm @ 22A, 10V 4.5V @ 4.4mA 78 nC @ 10 V ±30V 3090 pF @ 400 V Super Junction 312W (Tc) -55°C ~ 150°C (TJ) Through Hole
PSMN5R3-25MLDX

PSMN5R3-25MLDX

PSMN5R3-25MLD - N-CHANNEL 25V, L

NXP USA Inc.
3,656 -

RFQ

PSMN5R3-25MLDX

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 25 V 70A (Tc) 4.5V, 10V 5.9mOhm @ 15A, 10V 2.2V @ 1mA 12.7 nC @ 10 V ±20V 858 pF @ 12 V Schottky Diode (Body) 51W (Tc) -55°C ~ 175°C (TJ) Surface Mount
BUK954R8-60E,127

BUK954R8-60E,127

MOSFET N-CH 60V 100A TO220AB

NXP USA Inc.
3,210 -

RFQ

BUK954R8-60E,127

Ficha técnica

Bulk Automotive, AEC-Q101, TrenchMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 60 V 100A (Tc) 5V, 10V 4.5mOhm @ 25A, 10V 2.1V @ 1mA 65 nC @ 5 V ±10V 9710 pF @ 25 V - 234W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPW60R165CP

IPW60R165CP

21A, 600V, 0.165OHM, N-CHANNEL M

Infineon Technologies
3,083 -

RFQ

IPW60R165CP

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
FQU2N60CTU

FQU2N60CTU

POWER FIELD-EFFECT TRANSISTOR, 1

Fairchild Semiconductor
3,784 -

RFQ

FQU2N60CTU

Ficha técnica

Bulk QFET® Active N-Channel MOSFET (Metal Oxide) 600 V 1.9A (Tc) 10V 4.7Ohm @ 950mA, 10V 4V @ 250µA 12 nC @ 10 V ±30V 235 pF @ 25 V - 2.5W (Ta), 44W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPAW60R280P7SXKSA1

IPAW60R280P7SXKSA1

MOSFET N-CH 600V 12A TO220

Infineon Technologies
2,037 -

RFQ

IPAW60R280P7SXKSA1

Ficha técnica

Tube CoolMOS™ P7 Active N-Channel MOSFET (Metal Oxide) 600 V 12A (Tc) 10V 280mOhm @ 3.8A, 10V 4V @ 190µA 18 nC @ 10 V ±20V 761 pF @ 400 V - 24W (Tc) -40°C ~ 150°C (TJ) Through Hole
AOTF600A70L

AOTF600A70L

MOSFET N-CH 700V 8.5A TO220F

Alpha & Omega Semiconductor Inc.
759 -

RFQ

Tube aMOS5™ Active N-Channel MOSFET (Metal Oxide) 700 V 8.5A (Tj) 10V 600mOhm @ 2.5A, 10V 3.5V @ 250µA 15.5 nC @ 10 V ±20V 870 pF @ 100 V - 27W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRF614SPBF

IRF614SPBF

MOSFET N-CH 250V 2.7A D2PAK

Vishay Siliconix
198 -

RFQ

IRF614SPBF

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 250 V 2.7A (Tc) 10V 2Ohm @ 1.6A, 10V 4V @ 250µA 8.2 nC @ 10 V ±20V 140 pF @ 25 V - 3.1W (Ta), 36W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRFI620GPBF

IRFI620GPBF

MOSFET N-CH 200V 4.1A TO220-3

Vishay Siliconix
996 -

RFQ

IRFI620GPBF

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 200 V 4.1A (Tc) 10V 800mOhm @ 2.5A, 10V 4V @ 250µA 14 nC @ 10 V ±20V 260 pF @ 25 V - 30W (Tc) -55°C ~ 150°C (TJ) Through Hole
TPS1100PW

TPS1100PW

MOSFET P-CH 15V 1.27A 8TSSOP

Texas Instruments
590 -

RFQ

TPS1100PW

Ficha técnica

Tube - Active P-Channel MOSFET (Metal Oxide) 15 V 1.27A (Ta) 2.7V, 10V 180mOhm @ 1.5A, 10V 1.5V @ 250µA 5.45 nC @ 10 V +2V, -15V - - 504mW (Ta) -40°C ~ 150°C (TJ) Surface Mount
TP2535N3-G

TP2535N3-G

MOSFET P-CH 350V 86MA TO92-3

Microchip Technology
733 -

RFQ

TP2535N3-G

Ficha técnica

Bag - Active P-Channel MOSFET (Metal Oxide) 350 V 86mA (Tj) 4.5V, 10V 25Ohm @ 100mA, 10V 2.4V @ 1mA - ±20V 125 pF @ 25 V - 740mW (Ta) -55°C ~ 150°C (TJ) Through Hole
IPA80R1K4P7XKSA1

IPA80R1K4P7XKSA1

MOSFET N-CH 800V 4A TO220-3F

Infineon Technologies
475 -

RFQ

IPA80R1K4P7XKSA1

Ficha técnica

Tube CoolMOS™ Active N-Channel MOSFET (Metal Oxide) 800 V 4A (Tc) 10V 1.4Ohm @ 1.4A, 10V 3.5V @ 700µA 10 nC @ 10 V ±20V 250 pF @ 500 V Super Junction 24W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPP80R1K4P7XKSA1

IPP80R1K4P7XKSA1

MOSFET N-CH 800V 4A TO220-3

Infineon Technologies
412 -

RFQ

IPP80R1K4P7XKSA1

Ficha técnica

Tube CoolMOS™ Active N-Channel MOSFET (Metal Oxide) 800 V 4A (Tc) 10V 1.4Ohm @ 1.4A, 10V 3.5V @ 70µA 10 nC @ 10 V ±20V 250 pF @ 500 V Super Junction 32W (Tc) -55°C ~ 150°C (TJ) Through Hole
AOT380A60CL

AOT380A60CL

MOSFET N-CH 600V 11A TO220

Alpha & Omega Semiconductor Inc.
679 -

RFQ

AOT380A60CL

Ficha técnica

Tube aMOS5™ Active N-Channel MOSFET (Metal Oxide) 600 V 11A (Tc) 10V 380mOhm @ 5.5A, 10V 3.8V @ 250µA 20 nC @ 10 V ±20V 955 pF @ 100 V - 131W (Tc) -55°C ~ 150°C (TJ) Through Hole
1500+
1500+ Média diária de RFQ
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20,000.000 Unidade padrão do produto
1800+
1800+ Fabricantes em todo o mundo
15,000+
15,000+ Armazém em estoque
Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

Produto

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Telefone

Fudong Communication (Shenzhen) Grupo Co., Ltd.

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