Transistores - FETs, MOSFETs - Único

Foto: Número da peça do fabricante Disponibilidade Preço Quantidade Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
RSS090P03FU6TB

RSS090P03FU6TB

MOSFET P-CH 30V 9A 8SOP

Rohm Semiconductor
3,851 -

RFQ

RSS090P03FU6TB

Ficha técnica

Tape & Reel (TR) - Obsolete P-Channel MOSFET (Metal Oxide) 30 V 9A (Ta) 4V, 10V 14mOhm @ 9A, 10V 2.5V @ 1mA 39 nC @ 5 V ±20V 4000 pF @ 10 V - 2W (Ta) 150°C (TJ) Surface Mount
R6030ENX

R6030ENX

MOSFET N-CH 600V 30A TO220FM

Rohm Semiconductor
2,757 -

RFQ

R6030ENX

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 600 V 30A (Tc) 10V 130mOhm @ 14.5A, 10V 4V @ 1mA 85 nC @ 10 V ±30V 2100 pF @ 25 V - 40W (Tc) 150°C (TJ) Through Hole
R6547KNZ4C13

R6547KNZ4C13

MOSFET N-CH 650V 47A TO247

Rohm Semiconductor
2,420 -

RFQ

R6547KNZ4C13

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 650 V 47A (Tc) 10V 80mOhm @ 25.8A, 10V 5V @ 1.72mA 100 nC @ 10 V ±20V 4100 pF @ 25 V - 480W (Tc) 150°C (TJ) Through Hole
SCT4062KEHRC11

SCT4062KEHRC11

1200V, 26A, 3-PIN THD, TRENCH-ST

Rohm Semiconductor
3,912 -

RFQ

SCT4062KEHRC11

Ficha técnica

Tube Automotive, AEC-Q101 Active N-Channel MOSFET (Metal Oxide) 1200 V 26A (Tc) 18V 81mOhm @ 12A, 18V 4.8V @ 6.45mA 64 nC @ 18 V +21V, -4V 1498 pF @ 800 V - 115W 175°C (TJ) Through Hole
SCT4062KRHRC15

SCT4062KRHRC15

1200V, 26A, 4-PIN THD, TRENCH-ST

Rohm Semiconductor
2,299 -

RFQ

SCT4062KRHRC15

Ficha técnica

Tube Automotive, AEC-Q101 Active N-Channel SiC (Silicon Carbide Junction Transistor) 1200 V 26A (Tc) 18V 81mOhm @ 12A, 18V 4.8V @ 6.45mA 64 nC @ 18 V +21V, -4V 1498 pF @ 800 V - 115W 175°C (TJ) Through Hole
R6030ENZ4C13

R6030ENZ4C13

MOSFET N-CH 600V 30A TO247

Rohm Semiconductor
2,260 -

RFQ

R6030ENZ4C13

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 600 V 30A (Tc) 10V 130mOhm @ 14.5A, 10V 4V @ 1mA 85 nC @ 10 V ±20V 2100 pF @ 25 V - 305W (Tc) 150°C (TJ) Through Hole
SCT4045DW7HRTL

SCT4045DW7HRTL

750V, 31A, 7-PIN SMD, TRENCH-STR

Rohm Semiconductor
3,133 -

RFQ

SCT4045DW7HRTL

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101 Active N-Channel SiC (Silicon Carbide Junction Transistor) 750 V 31A (Tc) 18V 59mOhm @ 17A, 18V 4.8V @ 8.89mA 63 nC @ 18 V +21V, -4V 1460 pF @ 500 V - 93W 175°C (TJ) Surface Mount
SCT4062KW7HRTL

SCT4062KW7HRTL

1200V, 24A, 7-PIN SMD, TRENCH-ST

Rohm Semiconductor
3,701 -

RFQ

SCT4062KW7HRTL

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101 Active N-Channel SiC (Silicon Carbide Junction Transistor) 1200 V 24A (Tc) 18V 81mOhm @ 12A, 18V 4.8V @ 6.45mA 64 nC @ 18 V +21V, -4V 1498 pF @ 800 V - 93W 175°C (TJ) Surface Mount
RCD040N25TL

RCD040N25TL

MOSFET N-CH 250V 4A CPT3

Rohm Semiconductor
2,984 -

RFQ

RCD040N25TL

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Obsolete N-Channel MOSFET (Metal Oxide) 250 V 4A (Ta) 10V - - - ±30V - - 20W (Tc) 150°C (TJ) Surface Mount
RP1A090ZPTR

RP1A090ZPTR

MOSFET P-CH 12V 9A MPT6

Rohm Semiconductor
2,481 -

RFQ

RP1A090ZPTR

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Obsolete P-Channel MOSFET (Metal Oxide) 12 V 9A (Ta) 1.5V, 4.5V 12mOhm @ 9A, 4.5V 1V @ 1mA 59 nC @ 4.5 V ±10V 7400 pF @ 6 V - 2W (Ta) 150°C (TJ) Surface Mount
RP1E100RPTR

RP1E100RPTR

MOSFET P-CH 30V 10A MPT6

Rohm Semiconductor
3,452 -

RFQ

RP1E100RPTR

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Obsolete P-Channel MOSFET (Metal Oxide) 30 V 10A (Ta) 10V 12.6mOhm @ 10A, 10V 2.5V @ 1mA 39 nC @ 5 V ±20V 3600 pF @ 10 V - 2W (Ta) 150°C (TJ) Surface Mount
RRH050P03TB1

RRH050P03TB1

MOSFET P-CH 30V 5A 8SOP

Rohm Semiconductor
3,816 -

RFQ

RRH050P03TB1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Discontinued at Mosen P-Channel MOSFET (Metal Oxide) 30 V 5A (Ta) 4V, 10V 50mOhm @ 5A, 10V 2.5V @ 1mA 9.2 nC @ 5 V ±20V 850 pF @ 10 V - 650mW (Ta) 150°C (TJ) Surface Mount
SCT2450KEGC11

SCT2450KEGC11

1200V, 10A, THD, SILICON-CARBIDE

Rohm Semiconductor
3,905 -

RFQ

SCT2450KEGC11

Ficha técnica

Tube - Active N-Channel SiCFET (Silicon Carbide) 1200 V 10A (Tc) 18V 585mOhm @ 3A, 18V 4V @ 900µA 27 nC @ 18 V +22V, -6V 463 pF @ 800 V - 85W (Tc) 175°C Through Hole
SCT2450KEHRC11

SCT2450KEHRC11

1200V, 10A, THD, SILICON-CARBIDE

Rohm Semiconductor
3,595 -

RFQ

SCT2450KEHRC11

Ficha técnica

Tube Automotive, AEC-Q101 Active N-Channel SiCFET (Silicon Carbide) 1200 V 10A (Tc) 18V 585mOhm @ 3A, 18V 4V @ 900µA 27 nC @ 18 V +22V, -6V 463 pF @ 800 V - 85W (Tc) 175°C (TJ) Through Hole
SCT2280KEGC11

SCT2280KEGC11

1200V, 14A, THD, SILICON-CARBIDE

Rohm Semiconductor
2,256 -

RFQ

SCT2280KEGC11

Ficha técnica

Tube - Active N-Channel SiCFET (Silicon Carbide) 1200 V 14A (Tc) 18V 364mOhm @ 4A, 18V 4V @ 1.4mA 36 nC @ 18 V +22V, -6V 667 pF @ 800 V - 108W (Tc) 175°C Through Hole
R6047KNZ4C13

R6047KNZ4C13

MOSFET N-CH 600V 47A TO247

Rohm Semiconductor
2,183 -

RFQ

R6047KNZ4C13

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 600 V 47A (Tc) 10V 72mOhm @ 25.8A, 10V 5V @ 1mA 100 nC @ 10 V ±20V 4300 pF @ 25 V - 481W (Tc) 150°C (TJ) Through Hole
R6047ENZ4C13

R6047ENZ4C13

MOSFET N-CH 600V 47A TO247

Rohm Semiconductor
3,692 -

RFQ

R6047ENZ4C13

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 600 V 47A (Tc) 10V 72mOhm @ 25.8A, 10V 4V @ 1mA 145 nC @ 10 V ±20V 3850 pF @ 25 V - 481W (Tc) 150°C (TJ) Through Hole
SCT4045DRC15

SCT4045DRC15

750V, 45M, 4-PIN THD, TRENCH-STR

Rohm Semiconductor
2,389 -

RFQ

SCT4045DRC15

Ficha técnica

Tube - Active N-Channel SiCFET (Silicon Carbide) 750 V 34A (Tc) 18V 59mOhm @ 17A, 18V 4.8V @ 8.89mA 63 nC @ 18 V +21V, -4V 1460 pF @ 500 V - 115W 175°C (TJ) Through Hole
SCT4045DEC11

SCT4045DEC11

750V, 45M, 3-PIN THD, TRENCH-STR

Rohm Semiconductor
3,022 -

RFQ

SCT4045DEC11

Ficha técnica

Tube - Active N-Channel SiCFET (Silicon Carbide) 750 V 34A (Tc) 18V 59mOhm @ 17A, 18V 4.8V @ 8.89mA 63 nC @ 18 V +21V, -4V 14600 pF @ 500 V - 115W 175°C (TJ) Through Hole
SCT2280KEHRC11

SCT2280KEHRC11

1200V, 14A, THD, SILICON-CARBIDE

Rohm Semiconductor
3,945 -

RFQ

SCT2280KEHRC11

Ficha técnica

Tube Automotive, AEC-Q101 Active N-Channel SiCFET (Silicon Carbide) 1200 V 14A (Tc) 18V 364mOhm @ 4A, 18V 4V @ 1.4mA 36 nC @ 400 V +22V, -6V 667 pF @ 800 V - 108W (Tc) 175°C (TJ) Through Hole
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1500+ Média diária de RFQ
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1800+
1800+ Fabricantes em todo o mundo
15,000+
15,000+ Armazém em estoque
Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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