Transistores - FETs, MOSFETs - Único

Foto: Número da peça do fabricante Disponibilidade Preço Quantidade Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
SCT4062KRC15

SCT4062KRC15

1200V, 62M, 4-PIN THD, TRENCH-ST

Rohm Semiconductor
2,656 -

RFQ

SCT4062KRC15

Ficha técnica

Tube - Active N-Channel SiCFET (Silicon Carbide) 1200 V 26A (Tc) 18V 81mOhm @ 12A, 18V 4.8V @ 6.45mA 64 nC @ 18 V +21V, -4V 1498 pF @ 800 V - 115W 175°C (TJ) Through Hole
SCT4062KEC11

SCT4062KEC11

1200V, 62M, 3-PIN THD, TRENCH-ST

Rohm Semiconductor
3,446 -

RFQ

SCT4062KEC11

Ficha técnica

Tube - Active N-Channel SiCFET (Silicon Carbide) 1200 V 26A (Tc) 18V 81mOhm @ 12A, 18V 4.8V @ 6.45mA 64 nC @ 18 V +21V, -4V 1498 pF @ 800 V - 115W 175°C (TJ) Through Hole
SCT4045DRHRC15

SCT4045DRHRC15

750V, 34A, 4-PIN THD, TRENCH-STR

Rohm Semiconductor
3,263 -

RFQ

SCT4045DRHRC15

Ficha técnica

Tube Automotive, AEC-Q101 Active N-Channel SiC (Silicon Carbide Junction Transistor) 750 V 34A (Tc) 18V 59mOhm @ 17A, 18V 4.8V @ 8.89mA 63 nC @ 18 V +21V, -4V 1460 pF @ 500 V - 115W 175°C (TJ) Through Hole
SCT4045DEHRC11

SCT4045DEHRC11

750V, 34A, 3-PIN THD, TRENCH-STR

Rohm Semiconductor
3,976 -

RFQ

SCT4045DEHRC11

Ficha técnica

Tube Automotive, AEC-Q101 Active N-Channel SiC (Silicon Carbide Junction Transistor) 750 V 34A (Tc) 18V 59mOhm @ 17A, 18V 4.8V @ 8.89mA 63 nC @ 18 V +21V, -4V 1460 pF @ 500 V - 115W 175°C (TJ) Through Hole
SCT4026DW7HRTL

SCT4026DW7HRTL

750V, 51A, 7-PIN SMD, TRENCH-STR

Rohm Semiconductor
2,535 -

RFQ

SCT4026DW7HRTL

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101 Active N-Channel SiC (Silicon Carbide Junction Transistor) 750 V 51A (Tc) 18V 34mOhm @ 29A, 18V 4.8V @ 15.4mA 94 nC @ 18 V +21V, -4V 2320 pF @ 500 V - 150W 175°C (TJ) Surface Mount
SCT4036KW7HRTL

SCT4036KW7HRTL

1200V, 40A, 7-PIN SMD, TRENCH-ST

Rohm Semiconductor
2,670 -

RFQ

SCT4036KW7HRTL

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101 Active N-Channel SiC (Silicon Carbide Junction Transistor) 1200 V 40A (Tc) 18V 47mOhm @ 21A, 18V 4.8V @ 11.1mA 91 nC @ 18 V +21V, -4V 2335 pF @ 800 V - 150W 175°C (TJ) Surface Mount
SCT2160KEGC11

SCT2160KEGC11

1200V, 22A, THD, SILICON-CARBIDE

Rohm Semiconductor
3,799 -

RFQ

SCT2160KEGC11

Ficha técnica

Tube - Active N-Channel SiCFET (Silicon Carbide) 1200 V 22A (Tc) 18V 208mOhm @ 7A, 18V 4V @ 2.5mA 62 nC @ 18 V +22V, -6V 1200 pF @ 800 V - 165W (Tc) 175°C (TJ) Through Hole
SCT2160KEHRC11

SCT2160KEHRC11

1200V, 22A, THD, SILICON-CARBIDE

Rohm Semiconductor
2,415 -

RFQ

SCT2160KEHRC11

Ficha técnica

Tube Automotive, AEC-Q101 Active N-Channel SiCFET (Silicon Carbide) 1200 V 22A (Tc) 18V 208mOhm @ 7A, 18V 4V @ 2.5mA 62 nC @ 18 V +22V, -6V 1200 pF @ 800 V - 165W (Tc) 175°C (TJ) Through Hole
SCT4026DRC15

SCT4026DRC15

750V, 26M, 4-PIN THD, TRENCH-STR

Rohm Semiconductor
3,686 -

RFQ

SCT4026DRC15

Ficha técnica

Tube - Active N-Channel SiCFET (Silicon Carbide) 750 V 56A (Tc) 18V 34mOhm @ 29A, 18V 4.8V @ 15.4mA 94 nC @ 18 V +21V, -4V 2320 pF @ 500 V - 176W 175°C (TJ) Through Hole
SCT4026DEC11

SCT4026DEC11

750V, 26M, 3-PIN THD, TRENCH-STR

Rohm Semiconductor
3,070 -

RFQ

SCT4026DEC11

Ficha técnica

Tube - Active N-Channel SiCFET (Silicon Carbide) 750 V 56A (Tc) 18V 34mOhm @ 29A, 18V 4.8V @ 15.4mA 94 nC @ 18 V +21V, -4V 2320 pF @ 500 V - 176W 175°C (TJ) Through Hole
SCT4036KEC11

SCT4036KEC11

1200V, 36M, 3-PIN THD, TRENCH-ST

Rohm Semiconductor
2,262 -

RFQ

SCT4036KEC11

Ficha técnica

Tube - Active N-Channel SiCFET (Silicon Carbide) 1200 V 43A (Tc) 18V 47mOhm @ 21A, 18V 4.8V @ 11.1mA 91 nC @ 18 V +21V, -4V 2335 pF @ 800 V - 176W 175°C (TJ) Through Hole
SCT4036KRC15

SCT4036KRC15

1200V, 36M, 4-PIN THD, TRENCH-ST

Rohm Semiconductor
2,425 -

RFQ

SCT4036KRC15

Ficha técnica

Tube - Active N-Channel SiCFET (Silicon Carbide) 1200 V 43A (Tc) 18V 47mOhm @ 21A, 18V 4.8V @ 11.1mA 91 nC @ 18 V +21V, -4V 2335 pF @ 800 V - 176W 175°C (TJ) Through Hole
SCT4026DEHRC11

SCT4026DEHRC11

750V, 56A, 3-PIN THD, TRENCH-STR

Rohm Semiconductor
3,425 -

RFQ

SCT4026DEHRC11

Ficha técnica

Tube Automotive, AEC-Q101 Active N-Channel SiC (Silicon Carbide Junction Transistor) 750 V 56A (Tc) 18V 34mOhm @ 29A, 18V 4.8V @ 15.4mA 94 nC @ 18 V +21V, -4V 2320 pF @ 500 V - 176W 175°C (TJ) Through Hole
SCT4026DRHRC15

SCT4026DRHRC15

750V, 56A, 4-PIN THD, TRENCH-STR

Rohm Semiconductor
3,103 -

RFQ

SCT4026DRHRC15

Ficha técnica

Tube Automotive, AEC-Q101 Active N-Channel SiC (Silicon Carbide Junction Transistor) 750 V 56A (Tc) 18V 34mOhm @ 29A, 18V 4.8V @ 15.4mA 94 nC @ 18 V +21V, -4V 2320 pF @ 500 V - 176W 175°C (TJ) Through Hole
SCT4036KEHRC11

SCT4036KEHRC11

1200V, 43A, 3-PIN THD, TRENCH-ST

Rohm Semiconductor
2,897 -

RFQ

SCT4036KEHRC11

Ficha técnica

Tube Automotive, AEC-Q101 Active N-Channel SiC (Silicon Carbide Junction Transistor) 1200 V 43A (Tc) 18V 47mOhm @ 21A, 18V 4.8V @ 11.1mA 91 nC @ 18 V +21V, -4V 2335 pF @ 800 V - 176W 175°C (TJ) Through Hole
SCT4036KRHRC15

SCT4036KRHRC15

1200V, 43A, 4-PIN THD, TRENCH-ST

Rohm Semiconductor
2,760 -

RFQ

SCT4036KRHRC15

Ficha técnica

Tube Automotive, AEC-Q101 Active N-Channel SiC (Silicon Carbide Junction Transistor) 1200 V 43A (Tc) 18V 47mOhm @ 21A, 18V 4.8V @ 11.1mA 91 nC @ 18 V +21V, -4V 2335 pF @ 800 V - 176W 175°C (TJ) Through Hole
SCT2080KEGC11

SCT2080KEGC11

DIODE N-CH 1200V 40A TO-247AC

Rohm Semiconductor
3,348 -

RFQ

Tube - Active N-Channel SiCFET (Silicon Carbide) 1200 V 40A (Tc) 18V 117mOhm @ 10A, 18V 4V @ 4.4mA 106 nC @ 18 V +22V, -6V 2080 pF @ 800 V - 262W (Tc) 175°C (TJ) Through Hole
SCT4013DRC15

SCT4013DRC15

750V, 13M, 4-PIN THD, TRENCH-STR

Rohm Semiconductor
2,800 -

RFQ

SCT4013DRC15

Ficha técnica

Tube - Active N-Channel SiCFET (Silicon Carbide) 750 V 105A (Tc) 18V 16.9mOhm @ 58A, 18V 4.8V @ 30.8mA 170 nC @ 18 V +21V, -4V 4580 pF @ 500 V - 312W 175°C (TJ) Through Hole
SCT4018KRC15

SCT4018KRC15

1200V, 18M, 4-PIN THD, TRENCH-ST

Rohm Semiconductor
2,904 -

RFQ

SCT4018KRC15

Ficha técnica

Tube - Active N-Channel SiCFET (Silicon Carbide) 1200 V 81A (Tc) 18V 23.4mOhm @ 42A, 18V 4.8V @ 22.2mA 170 nC @ 18 V +21V, -4V 4532 pF @ 800 V - 312W 175°C (TJ) Through Hole
RSU002N06T106

RSU002N06T106

MOSFET N-CH 60V 250MA UMT3

Rohm Semiconductor
2,755 -

RFQ

RSU002N06T106

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 60 V 250mA (Ta) 2.5V, 10V 2.4Ohm @ 250mA, 10V 2.3V @ 1mA - ±20V 15 pF @ 25 V - 200mW (Ta) 150°C (TJ) Surface Mount
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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