Transistores - FETs, MOSFETs - Único

Foto: Número da peça do fabricante Disponibilidade Preço Quantidade Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
RSS130N03HZGTB

RSS130N03HZGTB

NCH 30V 13A AUTOMOTIVE POWER MOS

Rohm Semiconductor
3,988 -

RFQ

RSS130N03HZGTB

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101 Active N-Channel MOSFET (Metal Oxide) 30 V 13A (Ta) 4V, 10V 8.3mOhm @ 13A, 10V 2.5V @ 1mA 35 nC @ 5 V ±20V 2000 pF @ 10 V - 2W (Ta) 150°C (TJ) Surface Mount
RD3U080AAFRATL

RD3U080AAFRATL

250V 8A TO-252, AUTOMOTIVE POWER

Rohm Semiconductor
2,415 -

RFQ

RD3U080AAFRATL

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 250 V 8A (Tc) 10V 300mOhm @ 4A, 10V 5V @ 1mA 25 nC @ 10 V ±30V 1440 pF @ 25 V - 85W (Tc) 150°C (TJ) Surface Mount
RSS060P05HZGTB

RSS060P05HZGTB

PCH -45V -6A POWER MOSFET: RSS06

Rohm Semiconductor
2,951 -

RFQ

RSS060P05HZGTB

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active P-Channel MOSFET (Metal Oxide) 45 V 6A (Ta) 4V, 10V 36mOhm @ 6A, 10V 2.5V @ 1mA 32.2 nC @ 5 V ±20V 2700 pF @ 10 V - 1.4W (Ta) 150°C (TJ) Surface Mount
R6511KND3TL1

R6511KND3TL1

HIGH-SPEED SWITCHING, NCH 650V 1

Rohm Semiconductor
3,582 -

RFQ

R6511KND3TL1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 650 V 11A (Tc) 10V 400mOhm @ 3.8A, 10V 5V @ 320µA 22 nC @ 10 V ±20V 760 pF @ 25 V - 124W (Tc) 150°C (TJ) Surface Mount
RD3L07BATTL1

RD3L07BATTL1

PCH -60V -70A POWER MOSFET - RD3

Rohm Semiconductor
3,360 -

RFQ

RD3L07BATTL1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active P-Channel MOSFET (Metal Oxide) 60 V 70A (Ta) 4.5V, 10V 12.7mOhm @ 70A, 10V 2.5V @ 1mA 105 nC @ 10 V ±20V 6700 pF @ 30 V - 101W (Ta) 150°C (TJ) Surface Mount
R6046ANZC8

R6046ANZC8

MOSFET N-CH 600V 46A TO3PF

Rohm Semiconductor
2,450 -

RFQ

R6046ANZC8

Ficha técnica

Bulk - Obsolete N-Channel MOSFET (Metal Oxide) 600 V 46A (Ta) 10V 81mOhm @ 23A, 10V 4.5V @ 1mA 150 nC @ 10 V ±30V 6000 pF @ 25 V - 120W (Tc) 150°C (TJ) Through Hole
ES6U42T2R

ES6U42T2R

MOSFET P-CH 20V 1A 6WEMT

Rohm Semiconductor
2,110 -

RFQ

ES6U42T2R

Ficha técnica

Tape & Reel (TR) - Obsolete P-Channel MOSFET (Metal Oxide) 20 V 1A (Ta) 2.5V, 4.5V 390mOhm @ 1A, 4.5V 2V @ 1mA 2.1 nC @ 4.5 V ±12V 150 pF @ 10 V Schottky Diode (Body) 700mW (Ta) 150°C (TJ) Surface Mount
RUE002N05TL

RUE002N05TL

MOSFET N-CH 50V 200MA EMT3

Rohm Semiconductor
3,198 -

RFQ

RUE002N05TL

Ficha técnica

Tape & Reel (TR) - Obsolete N-Channel MOSFET (Metal Oxide) 50 V 200mA (Ta) 1.2V, 4.5V 2.2Ohm @ 200mA, 4.5V 1V @ 1mA - ±8V 25 pF @ 10 V - 150mW (Ta) 150°C (TJ) Surface Mount
TT8U2TCR

TT8U2TCR

MOSFET P-CH 20V 2.4A 8TSST

Rohm Semiconductor
3,660 -

RFQ

TT8U2TCR

Ficha técnica

Tape & Reel (TR) - Active P-Channel MOSFET (Metal Oxide) 20 V 2.4A (Ta) 1.5V, 4.5V 105mOhm @ 2.4A, 4.5V 1V @ 1mA 6.7 nC @ 4.5 V ±10V 850 pF @ 10 V Schottky Diode (Isolated) 1.25W (Ta) 150°C (TJ) Surface Mount
RSS095N05HZGTB

RSS095N05HZGTB

NCH 45V 9.5A POWER MOSFET: RSS09

Rohm Semiconductor
3,427 -

RFQ

RSS095N05HZGTB

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 45 V 9.5A (Ta) 4V, 10V 16mOhm @ 9.5A, 10V 2.5V @ 1mA 26.5 nC @ 5 V ±20V 1830 pF @ 10 V - 1.4W (Ta) 150°C (TJ) Surface Mount
RS1E350BNTB1

RS1E350BNTB1

NCH 30V 80A POWER MOSFET: RS1E35

Rohm Semiconductor
2,419 -

RFQ

RS1E350BNTB1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 30 V 35A (Ta), 80A (Tc) 4.5V, 10V 1.7mOhm @ 35A, 10V 2.5V @ 1mA 185 nC @ 10 V ±20V 7900 pF @ 15 V - 3W (Ta), 35W (Tc) 150°C (TJ) Surface Mount
R6511END3TL1

R6511END3TL1

650V 11A TO-252, LOW-NOISE POWER

Rohm Semiconductor
2,106 -

RFQ

R6511END3TL1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 650 V 11A (Tc) 10V 400mOhm @ 3.8A, 10V 4V @ 320µA 32 nC @ 10 V ±20V 670 pF @ 25 V - 124W (Tc) 150°C (TJ) Surface Mount
R6006PND3FRATL

R6006PND3FRATL

600V 6A TO-252, AUTOMOTIVE POWER

Rohm Semiconductor
2,063 -

RFQ

R6006PND3FRATL

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 600 V 6A (Tc) 10V 1.2Ohm @ 3A, 10V 4.5V @ 1mA 15 nC @ 10 V ±30V 460 pF @ 25 V - 87W (Tc) 150°C (TJ) Surface Mount
R8002CND3FRATL

R8002CND3FRATL

MOSFET N-CH 800V 2A TO252

Rohm Semiconductor
2,500 -

RFQ

R8002CND3FRATL

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101 Active N-Channel MOSFET (Metal Oxide) 800 V 2A (Tc) 10V 4.3Ohm @ 1A, 10V 5.5V @ 1mA 12.1 nC @ 10 V ±30V 240 pF @ 25 V - 69W (Tc) 150°C (TJ) Surface Mount
R6004PND3FRATL

R6004PND3FRATL

MOSFET N-CH 600V 4A TO252

Rohm Semiconductor
2,708 -

RFQ

R6004PND3FRATL

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101 Active N-Channel MOSFET (Metal Oxide) 600 V 4A (Tc) 10V 1.8Ohm @ 2A, 10V 4.5V @ 1mA 11 nC @ 10 V ±25V 280 pF @ 25 V - 65W (Tc) 150°C (TJ) Surface Mount
RSJ301N10TL

RSJ301N10TL

NCH 100V 30A POWER MOSFET : RSJ3

Rohm Semiconductor
3,898 -

RFQ

RSJ301N10TL

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 100 V 30A (Ta) 4V, 10V 46mOhm @ 15A, 10V 2.5V @ 1mA 60 nC @ 10 V ±20V 2100 pF @ 25 V - 50W (Ta) 150°C (TJ) Surface Mount
SCT2750NYTB

SCT2750NYTB

SICFET N-CH 1700V 5.9A TO268

Rohm Semiconductor
1,352 -

RFQ

SCT2750NYTB

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel SiCFET (Silicon Carbide) 1700 V 5.9A (Tc) 18V 975mOhm @ 1.7A, 18V 4V @ 630µA 17 nC @ 18 V +22V, -6V 275 pF @ 800 V - 57W (Tc) 175°C (TJ) Surface Mount
SCT3080KLGC11

SCT3080KLGC11

SICFET N-CH 1200V 31A TO247N

Rohm Semiconductor
991 -

RFQ

SCT3080KLGC11

Ficha técnica

Tube - Active N-Channel SiCFET (Silicon Carbide) 1200 V 31A (Tc) 18V 104mOhm @ 10A, 18V 5.6V @ 5mA 60 nC @ 18 V +22V, -4V 785 pF @ 800 V - 165W (Tc) 175°C (TJ) Through Hole
SCT3030ALGC11

SCT3030ALGC11

SICFET N-CH 650V 70A TO247N

Rohm Semiconductor
5,794 -

RFQ

SCT3030ALGC11

Ficha técnica

Tube - Active N-Channel SiCFET (Silicon Carbide) 650 V 70A (Tc) 18V 39mOhm @ 27A, 18V 5.6V @ 13.3mA 104 nC @ 18 V +22V, -4V 1526 pF @ 500 V - 262W (Tc) 175°C (TJ) Through Hole
SCT3030ARC14

SCT3030ARC14

SICFET N-CH 650V 70A TO247-4L

Rohm Semiconductor
425 -

RFQ

SCT3030ARC14

Ficha técnica

Tube - Active N-Channel SiCFET (Silicon Carbide) 650 V 70A (Tc) 18V 39mOhm @ 27A, 18V 5.6V @ 13.3mA 104 nC @ 18 V +22V, -4V 1526 pF @ 500 V - 262W 175°C (TJ) Through Hole
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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