Transistores - FETs, MOSFETs - Único

Foto: Número da peça do fabricante Disponibilidade Preço Quantidade Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
BSC320N20NS3GATMA1

BSC320N20NS3GATMA1

MOSFET N-CH 200V 36A TDSON-8

Infineon Technologies
2,132 -

RFQ

BSC320N20NS3GATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 200 V 36A (Tc) 10V 32mOhm @ 36A, 10V 4V @ 90µA 29 nC @ 10 V ±20V 2350 pF @ 100 V - 125W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRF640NLPBF

IRF640NLPBF

MOSFET N-CH 200V 18A TO262

Infineon Technologies
3,816 -

RFQ

IRF640NLPBF

Ficha técnica

Tube HEXFET® Not For New Designs N-Channel MOSFET (Metal Oxide) 200 V 18A (Tc) 10V 150mOhm @ 11A, 10V 4V @ 250µA 67 nC @ 10 V ±20V 1160 pF @ 25 V - 150W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRF1404ZPBF

IRF1404ZPBF

MOSFET N-CH 40V 180A TO220AB

Infineon Technologies
3,982 -

RFQ

IRF1404ZPBF

Ficha técnica

Bulk,Tube HEXFET® Active N-Channel MOSFET (Metal Oxide) 40 V 180A (Tc) 10V 3.7mOhm @ 75A, 10V 4V @ 250µA 150 nC @ 10 V ±20V 4340 pF @ 25 V - 200W (Tc) -55°C ~ 175°C (TJ) Through Hole
BSS169 E6327

BSS169 E6327

MOSFET N-CH 100V 170MA SOT23-3

Infineon Technologies
3,690 -

RFQ

BSS169 E6327

Ficha técnica

Tape & Reel (TR) SIPMOS® Obsolete N-Channel MOSFET (Metal Oxide) 100 V 170mA (Ta) 0V, 10V 6Ohm @ 170mA, 10V 1.8V @ 50µA 2.8 nC @ 7 V ±20V 68 pF @ 25 V Depletion Mode 360mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
BSS169 E6906

BSS169 E6906

MOSFET N-CH 100V 170MA SOT23-3

Infineon Technologies
3,911 -

RFQ

BSS169 E6906

Ficha técnica

Tape & Reel (TR) SIPMOS® Obsolete N-Channel MOSFET (Metal Oxide) 100 V 170mA (Ta) 0V, 10V 6Ohm @ 170mA, 10V 1.8V @ 50µA 2.8 nC @ 7 V ±20V 68 pF @ 25 V Depletion Mode 360mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
BSS225

BSS225

MOSFET N-CH 600V 90MA SOT89

Infineon Technologies
2,483 -

RFQ

BSS225

Ficha técnica

Tape & Reel (TR) SIPMOS® Obsolete N-Channel MOSFET (Metal Oxide) 600 V 90mA (Ta) 4.5V, 10V 45Ohm @ 90mA, 10V 2.3V @ 94µA 5.8 nC @ 10 V ±20V 131 pF @ 25 V - 1W (Ta) -55°C ~ 150°C (TJ) Surface Mount
BSS225L6327HTSA1

BSS225L6327HTSA1

MOSFET N-CH 600V 90MA SOT89

Infineon Technologies
2,683 -

RFQ

BSS225L6327HTSA1

Ficha técnica

Tape & Reel (TR) SIPMOS® Obsolete N-Channel MOSFET (Metal Oxide) 600 V 90mA (Ta) 4.5V, 10V 45Ohm @ 90mA, 10V 2.3V @ 94µA 5.8 nC @ 10 V ±20V 131 pF @ 25 V - 1W (Ta) -55°C ~ 150°C (TJ) Surface Mount
BSS84P E6433

BSS84P E6433

MOSFET P-CH 60V 170MA SOT23-3

Infineon Technologies
3,967 -

RFQ

BSS84P E6433

Ficha técnica

Tape & Reel (TR) SIPMOS® Obsolete P-Channel MOSFET (Metal Oxide) 60 V 170mA (Ta) 4.5V, 10V 8Ohm @ 170mA, 10V 2V @ 20µA 1.5 nC @ 10 V ±20V 19 pF @ 25 V - 360mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
BSS87 E6433

BSS87 E6433

MOSFET N-CH 240V 260MA SOT89

Infineon Technologies
3,785 -

RFQ

BSS87 E6433

Ficha técnica

Tape & Reel (TR) SIPMOS® Discontinued at Mosen N-Channel MOSFET (Metal Oxide) 240 V 260mA (Ta) 4.5V, 10V 6Ohm @ 260mA, 10V 1.8V @ 108µA 5.5 nC @ 10 V ±20V 97 pF @ 25 V - 1W (Ta) -55°C ~ 150°C (TJ) Surface Mount
BTS110NKSA1

BTS110NKSA1

MOSFET N-CH 100V 10A TO220AB

Infineon Technologies
710 -

RFQ

BTS110NKSA1

Ficha técnica

Tube,Tube TEMPFET® Obsolete N-Channel MOSFET (Metal Oxide) 100 V 10A (Tc) - 200mOhm @ 5A, 10V 3.5V @ 1mA - - 600 pF @ 25 V - - -55°C ~ 150°C (TJ) Through Hole
BTS110E3045ANTMA1

BTS110E3045ANTMA1

MOSFET N-CH 100V 10A TO220AB

Infineon Technologies
3,025 -

RFQ

BTS110E3045ANTMA1

Ficha técnica

Tape & Reel (TR) TEMPFET® Obsolete N-Channel MOSFET (Metal Oxide) 100 V 10A (Tc) - 200mOhm @ 5A, 10V 3.5V @ 1mA - - 600 pF @ 25 V - - -55°C ~ 150°C (TJ) Surface Mount
BTS113ANKSA1

BTS113ANKSA1

MOSFET N-CH 60V 11.5A TO220AB

Infineon Technologies
3,770 -

RFQ

BTS113ANKSA1

Ficha técnica

Tube TEMPFET® Obsolete N-Channel MOSFET (Metal Oxide) 60 V 11.5A (Tc) 4.5V 170mOhm @ 5.8A, 4.5V 2.5V @ 1mA - ±10V 560 pF @ 25 V - 40W (Tc) -55°C ~ 150°C (TJ) Through Hole
BTS113AE3045ANTMA1

BTS113AE3045ANTMA1

MOSFET N-CH 60V 11.5A TO220AB

Infineon Technologies
3,774 -

RFQ

BTS113AE3045ANTMA1

Ficha técnica

Tape & Reel (TR) TEMPFET® Obsolete N-Channel MOSFET (Metal Oxide) 60 V 11.5A (Tc) 4.5V 170mOhm @ 5.8A, 4.5V 2.5V @ 1mA - ±10V 560 pF @ 25 V - 40W (Tc) -55°C ~ 150°C (TJ) Surface Mount
BTS113AE3064NKSA1

BTS113AE3064NKSA1

MOSFET N-CH 60V 11.5A TO220AB

Infineon Technologies
3,560 -

RFQ

BTS113AE3064NKSA1

Ficha técnica

Tube,Tube TEMPFET® Obsolete N-Channel MOSFET (Metal Oxide) 60 V 11.5A (Tc) 4.5V 170mOhm @ 5.8A, 4.5V 2.5V @ 1mA - ±10V 560 pF @ 25 V - 40W (Tc) -55°C ~ 150°C (TJ) Through Hole
BTS244ZNKSA1

BTS244ZNKSA1

MOSFET N-CH 55V 35A TO220-5-3

Infineon Technologies
2,478 -

RFQ

BTS244ZNKSA1

Ficha técnica

Tube TEMPFET® Obsolete N-Channel MOSFET (Metal Oxide) 55 V 35A (Tc) 4.5V, 10V 13mOhm @ 19A, 10V 2V @ 130µA 130 nC @ 10 V ±20V 2660 pF @ 25 V Temperature Sensing Diode 170W (Tc) -40°C ~ 175°C (TJ) Through Hole
BTS244Z E3043

BTS244Z E3043

MOSFET N-CH 55V 35A TO220-5-43

Infineon Technologies
3,711 -

RFQ

BTS244Z E3043

Ficha técnica

Tube TEMPFET® Obsolete N-Channel MOSFET (Metal Oxide) 55 V 35A (Tc) 4.5V, 10V 13mOhm @ 19A, 10V 2V @ 130µA 130 nC @ 10 V ±20V 2660 pF @ 25 V Temperature Sensing Diode 170W (Tc) -40°C ~ 175°C (TJ) Through Hole
BTS244Z E3062A

BTS244Z E3062A

MOSFET N-CH 55V 35A TO220-5-62

Infineon Technologies
3,122 -

RFQ

BTS244Z E3062A

Ficha técnica

Tape & Reel (TR) TEMPFET® Obsolete N-Channel MOSFET (Metal Oxide) 55 V 35A (Tc) 4.5V, 10V 13mOhm @ 19A, 10V 2V @ 130µA 130 nC @ 10 V ±20V 2660 pF @ 25 V Temperature Sensing Diode 170W (Tc) -40°C ~ 175°C (TJ) Surface Mount
BTS247ZAKSA1

BTS247ZAKSA1

MOSFET N-CH 55V 33A TO220-5-3

Infineon Technologies
2,477 -

RFQ

BTS247ZAKSA1

Ficha técnica

Tube TEMPFET® Obsolete N-Channel MOSFET (Metal Oxide) 55 V 33A (Tc) 4.5V, 10V 18mOhm @ 12A, 10V 2V @ 90µA 90 nC @ 10 V ±20V 1730 pF @ 25 V Temperature Sensing Diode 120W (Tc) -40°C ~ 175°C (TJ) Through Hole
BTS247ZE3043AKSA1

BTS247ZE3043AKSA1

MOSFET N-CH 55V 33A TO220-5-43

Infineon Technologies
8,000 -

RFQ

BTS247ZE3043AKSA1

Ficha técnica

Tube,Tube TEMPFET® Obsolete N-Channel MOSFET (Metal Oxide) 55 V 33A (Tc) 4.5V, 10V 18mOhm @ 12A, 10V 2V @ 90µA 90 nC @ 10 V ±20V 1730 pF @ 25 V Temperature Sensing Diode 120W (Tc) -40°C ~ 175°C (TJ) Through Hole
BTS282ZAKSA1

BTS282ZAKSA1

MOSFET N-CH 49V 80A TO220-7

Infineon Technologies
3,016 -

RFQ

BTS282ZAKSA1

Ficha técnica

Tube,Tube TEMPFET® Obsolete N-Channel MOSFET (Metal Oxide) 49 V 80A (Tc) 4.5V, 10V 6.5mOhm @ 36A, 10V 2V @ 240µA 232 nC @ 10 V ±20V 4800 pF @ 25 V Temperature Sensing Diode 300W (Tc) -40°C ~ 175°C (TJ) Through Hole
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1500+ Média diária de RFQ
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1800+
1800+ Fabricantes em todo o mundo
15,000+
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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