Transistores - FETs, MOSFETs - Único

Foto: Número da peça do fabricante Disponibilidade Preço Quantidade Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
BSP125L6327HTSA1

BSP125L6327HTSA1

MOSFET N-CH 600V 120MA SOT223-4

Infineon Technologies
342,800 -

RFQ

BSP125L6327HTSA1

Ficha técnica

Tape & Reel (TR),Bulk SIPMOS® Obsolete N-Channel MOSFET (Metal Oxide) 600 V 120mA (Ta) 4.5V, 10V 45Ohm @ 120mA, 10V 2.3V @ 94µA 6.6 nC @ 10 V ±20V 150 pF @ 25 V - 1.8W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IQE065N10NM5ATMA1

IQE065N10NM5ATMA1

TRENCH >=100V PG-TSON-8

Infineon Technologies
2,796 -

RFQ

IQE065N10NM5ATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 100 V 14A (Ta), 85A (Tc) 6V, 10V 6.5mOhm @ 20A, 10V 3.8V @ 48µA 42 nC @ 10 V ±20V 3000 pF @ 50 V - 2.5W (Ta), 100W (Tc) -55°C ~ 175°C (TJ) Surface Mount
BSP129L6327HTSA1

BSP129L6327HTSA1

MOSFET N-CH 240V 350MA SOT223-4

Infineon Technologies
172,328 -

RFQ

BSP129L6327HTSA1

Ficha técnica

Tape & Reel (TR),Bulk SIPMOS® Obsolete N-Channel MOSFET (Metal Oxide) 240 V 350mA (Ta) 0V, 10V 6Ohm @ 350mA, 10V 1V @ 108µA 5.7 nC @ 5 V ±20V 108 pF @ 25 V Depletion Mode 1.8W (Ta) -55°C ~ 150°C (TJ) Surface Mount
BSP129L6906HTSA1

BSP129L6906HTSA1

MOSFET N-CH 240V 350MA SOT223-4

Infineon Technologies
2,844 -

RFQ

BSP129L6906HTSA1

Ficha técnica

Tape & Reel (TR) SIPMOS® Obsolete N-Channel MOSFET (Metal Oxide) 240 V 350mA (Ta) 0V, 10V 6Ohm @ 350mA, 10V 1V @ 108µA 5.7 nC @ 5 V ±20V 108 pF @ 25 V Depletion Mode 1.8W (Ta) -55°C ~ 150°C (TJ) Surface Mount
BSP135 E6327

BSP135 E6327

MOSFET N-CH 600V 120MA SOT223-4

Infineon Technologies
2,982 -

RFQ

BSP135 E6327

Ficha técnica

Tape & Reel (TR) SIPMOS® Discontinued at Mosen N-Channel MOSFET (Metal Oxide) 600 V 120mA (Ta) 0V, 10V 45Ohm @ 120mA, 10V 1V @ 94µA 4.9 nC @ 5 V ±20V 146 pF @ 25 V Depletion Mode 1.8W (Ta) -55°C ~ 150°C (TJ) Surface Mount
BSP135 E6906

BSP135 E6906

MOSFET N-CH 600V 120MA SOT223-4

Infineon Technologies
2,381 -

RFQ

BSP135 E6906

Ficha técnica

Tape & Reel (TR) SIPMOS® Obsolete N-Channel MOSFET (Metal Oxide) 600 V 120mA (Ta) 0V, 10V 45Ohm @ 120mA, 10V 1V @ 94µA 4.9 nC @ 5 V ±20V 146 pF @ 25 V Depletion Mode 1.8W (Ta) -55°C ~ 150°C (TJ) Surface Mount
BSP135L6327HTSA1

BSP135L6327HTSA1

MOSFET N-CH 600V 120MA SOT223-4

Infineon Technologies
198,301 -

RFQ

BSP135L6327HTSA1

Ficha técnica

Tape & Reel (TR),Bulk SIPMOS® Obsolete N-Channel MOSFET (Metal Oxide) 600 V 120mA (Ta) 0V, 10V 45Ohm @ 120mA, 10V 1V @ 94µA 4.9 nC @ 5 V ±20V 146 pF @ 25 V Depletion Mode 1.8W (Ta) -55°C ~ 150°C (TJ) Surface Mount
BSP135L6906HTSA1

BSP135L6906HTSA1

MOSFET N-CH 600V 120MA SOT223-4

Infineon Technologies
2,957 -

RFQ

BSP135L6906HTSA1

Ficha técnica

Tape & Reel (TR),Bulk SIPMOS® Obsolete N-Channel MOSFET (Metal Oxide) 600 V 120mA (Ta) 0V, 10V 45Ohm @ 120mA, 10V 1V @ 94µA 4.9 nC @ 5 V ±20V 146 pF @ 25 V Depletion Mode 1.8W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IPD600N25N3GATMA1

IPD600N25N3GATMA1

MOSFET N-CH 250V 25A TO252-3

Infineon Technologies
2,910 -

RFQ

IPD600N25N3GATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 250 V 25A (Tc) 10V 60mOhm @ 25A, 10V 4V @ 90µA 29 nC @ 10 V ±20V 2350 pF @ 100 V - 136W (Tc) -55°C ~ 175°C (TJ) Surface Mount
BSP149 E6327

BSP149 E6327

MOSFET N-CH 200V 660MA SOT223-4

Infineon Technologies
3,643 -

RFQ

BSP149 E6327

Ficha técnica

Tape & Reel (TR) SIPMOS® Obsolete N-Channel MOSFET (Metal Oxide) 200 V 660mA (Ta) 0V, 10V 1.8Ohm @ 660mA, 10V 1V @ 400µA 14 nC @ 5 V ±20V 430 pF @ 25 V Depletion Mode 1.8W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IPB80P04P4L04ATMA2

IPB80P04P4L04ATMA2

MOSFET P-CH 40V 80A TO263-3

Infineon Technologies
3,576 -

RFQ

IPB80P04P4L04ATMA2

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS®-P2 Active P-Channel MOSFET (Metal Oxide) 40 V 80A (Tc) 4.5V, 10V 4.7mOhm @ 80A, 10V 2.2V @ 250µA 176 nC @ 10 V +5V, -16V 11570 pF @ 25 V - 125W (Tc) -55°C ~ 175°C (TJ) Surface Mount
BSP149 E6906

BSP149 E6906

MOSFET N-CH 200V 660MA SOT223-4

Infineon Technologies
3,343 -

RFQ

BSP149 E6906

Ficha técnica

Tape & Reel (TR) SIPMOS® Discontinued at Mosen N-Channel MOSFET (Metal Oxide) 200 V 660mA (Ta) 0V, 10V 1.8Ohm @ 660mA, 10V 1V @ 400µA 14 nC @ 5 V ±20V 430 pF @ 25 V Depletion Mode 1.8W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IPB80P04P405ATMA2

IPB80P04P405ATMA2

MOSFET P-CH 40V 80A TO263-3

Infineon Technologies
3,153 -

RFQ

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101, OptiMOS®-P2 Active P-Channel MOSFET (Metal Oxide) 40 V 80A (Tc) - 5.2mOhm @ 80A, 10V 4V @ 250µA 151 nC @ 10 V ±20V 10300 pF @ 25 V - 125W (Tc) -55°C ~ 175°C (TJ) Surface Mount
BSP149L6906HTSA1

BSP149L6906HTSA1

MOSFET N-CH 200V 660MA SOT223-4

Infineon Technologies
102,500 -

RFQ

BSP149L6906HTSA1

Ficha técnica

Tape & Reel (TR),Bulk SIPMOS® Obsolete N-Channel MOSFET (Metal Oxide) 200 V 660mA (Ta) 0V, 10V 1.8Ohm @ 660mA, 10V 1V @ 400µA 14 nC @ 5 V ±20V 430 pF @ 25 V Depletion Mode 1.8W (Ta) -55°C ~ 150°C (TJ) Surface Mount
BSP296 E6433

BSP296 E6433

MOSFET N-CH 100V 1.1A SOT223-4

Infineon Technologies
3,788 -

RFQ

BSP296 E6433

Ficha técnica

Tape & Reel (TR) SIPMOS® Obsolete N-Channel MOSFET (Metal Oxide) 100 V 1.1A (Ta) 4.5V, 10V 700mOhm @ 1.1A, 10V 1.8V @ 400µA 17.2 nC @ 10 V ±20V 364 pF @ 25 V - 1.79W (Ta) -55°C ~ 150°C (TJ) Surface Mount
BSP297 E6327

BSP297 E6327

MOSFET N-CH 200V 660MA SOT223-4

Infineon Technologies
2,911 -

RFQ

BSP297 E6327

Ficha técnica

Tape & Reel (TR) SIPMOS® Obsolete N-Channel MOSFET (Metal Oxide) 200 V 660mA (Ta) 4.5V, 10V 1.8Ohm @ 660mA, 10V 1.8V @ 400µA 16.1 nC @ 10 V ±20V 357 pF @ 25 V - 1.8W (Ta) -55°C ~ 150°C (TJ) Surface Mount
BSP298 E6327

BSP298 E6327

MOSFET N-CH 400V 500MA SOT223-4

Infineon Technologies
3,192 -

RFQ

BSP298 E6327

Ficha técnica

Tape & Reel (TR) SIPMOS® Obsolete N-Channel MOSFET (Metal Oxide) 400 V 500mA (Ta) 10V 3Ohm @ 500mA, 10V 4V @ 1mA - ±20V 400 pF @ 25 V - 1.8W (Ta) -55°C ~ 150°C (TJ) Surface Mount
BSP298L6327HUSA1

BSP298L6327HUSA1

MOSFET N-CH 400V 500MA SOT223-4

Infineon Technologies
3,227 -

RFQ

BSP298L6327HUSA1

Ficha técnica

Tape & Reel (TR),Bulk SIPMOS® Obsolete N-Channel MOSFET (Metal Oxide) 400 V 500mA (Ta) 10V 3Ohm @ 500mA, 10V 4V @ 1mA - ±20V 400 pF @ 25 V - 1.8W (Ta) -55°C ~ 150°C (TJ) Surface Mount
BSP299 E6327

BSP299 E6327

MOSFET N-CH 500V 400MA SOT223-4

Infineon Technologies
2,559 -

RFQ

BSP299 E6327

Ficha técnica

Tape & Reel (TR) SIPMOS® Discontinued at Mosen N-Channel MOSFET (Metal Oxide) 500 V 400mA (Ta) 10V 4Ohm @ 400mA, 10V 4V @ 1mA - ±20V 400 pF @ 25 V - 1.8W (Ta) -55°C ~ 150°C (TJ) Surface Mount
BSP300 E6327

BSP300 E6327

MOSFET N-CH 800V 190MA SOT223-4

Infineon Technologies
3,114 -

RFQ

BSP300 E6327

Ficha técnica

Tape & Reel (TR) SIPMOS® Discontinued at Mosen N-Channel MOSFET (Metal Oxide) 800 V 190mA (Ta) 10V 20Ohm @ 190mA, 10V 4V @ 1mA - ±20V 230 pF @ 25 V - 1.8W (Ta) -55°C ~ 150°C (TJ) Surface Mount
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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