Transistores - FETs, MOSFETs - Único

Foto: Número da peça do fabricante Disponibilidade Preço Quantidade Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IPD70P04P4L08ATMA2

IPD70P04P4L08ATMA2

MOSFET P-CH 40V 70A TO252-3

Infineon Technologies
2,769 -

RFQ

IPD70P04P4L08ATMA2

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS®-P2 Active P-Channel MOSFET (Metal Oxide) 40 V 70A (Tc) 4.5V, 10V 7.8mOhm @ 70A, 10V 2.2V @ 120µA 92 nC @ 10 V +5V, -16V 5430 pF @ 25 V - 75W (Tc) -55°C ~ 175°C (TJ) Surface Mount
BSC026N02KSGAUMA1

BSC026N02KSGAUMA1

MOSFET N-CH 20V 25A/100A TDSON

Infineon Technologies
3,131 -

RFQ

BSC026N02KSGAUMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT),Bulk OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 20 V 25A (Ta), 100A (Tc) 2.5V, 4.5V 2.6mOhm @ 50A, 4.5V 1.2V @ 200µA 52.7 nC @ 4.5 V ±12V 7800 pF @ 10 V - 2.8W (Ta), 78W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRLZ44ZSTRLPBF

IRLZ44ZSTRLPBF

MOSFET N-CH 55V 51A D2PAK

Infineon Technologies
2,609 -

RFQ

IRLZ44ZSTRLPBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) HEXFET® Active N-Channel MOSFET (Metal Oxide) 55 V 51A (Tc) 4.5V, 10V 13.5mOhm @ 31A, 10V 3V @ 250µA 36 nC @ 5 V ±16V 1620 pF @ 25 V - 80W (Tc) -55°C ~ 175°C (TJ) Surface Mount
BSZ042N06NSATMA1

BSZ042N06NSATMA1

MOSFET N-CH 60V 17A/40A TSDSON

Infineon Technologies
3,838 -

RFQ

BSZ042N06NSATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 60 V 17A (Ta), 40A (Tc) 6V, 10V 4.2mOhm @ 20A, 10V 2.8V @ 36µA 27 nC @ 10 V ±20V 2000 pF @ 30 V - 2.1W (Ta), 69W (Tc) -55°C ~ 150°C (TJ) Surface Mount
BSZ097N10NS5ATMA1

BSZ097N10NS5ATMA1

MOSFET N-CH 100V 8A/40A TSDSON

Infineon Technologies
2,695 -

RFQ

BSZ097N10NS5ATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 100 V 8A (Ta), 40A (Tc) 6V, 10V 9.7mOhm @ 20A, 10V 3.8V @ 36µA 28 nC @ 10 V ±20V 2080 pF @ 50 V - 2.1W (Ta), 69W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRFZ34NSTRLPBF

IRFZ34NSTRLPBF

MOSFET N-CH 55V 29A D2PAK

Infineon Technologies
2,404 -

RFQ

IRFZ34NSTRLPBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) HEXFET® Active N-Channel MOSFET (Metal Oxide) 55 V 29A (Tc) 10V 40mOhm @ 16A, 10V 4V @ 250µA 34 nC @ 10 V ±20V 700 pF @ 25 V - 3.8W (Ta), 68W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPD90R1K2C3ATMA1

IPD90R1K2C3ATMA1

MOSFET N-CH 900V 5.1A TO252-3

Infineon Technologies
2,904 -

RFQ

IPD90R1K2C3ATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) CoolMOS™ Not For New Designs N-Channel MOSFET (Metal Oxide) 900 V 5.1A (Tc) 10V 1.2Ohm @ 2.8A, 10V 3.5V @ 310µA 28 nC @ 10 V ±20V 710 pF @ 100 V - 83W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRFR2905ZTRPBF

IRFR2905ZTRPBF

MOSFET N-CH 55V 42A DPAK

Infineon Technologies
3,181 -

RFQ

IRFR2905ZTRPBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) HEXFET® Active N-Channel MOSFET (Metal Oxide) 55 V 42A (Tc) 10V 14.5mOhm @ 36A, 10V 4V @ 250µA 44 nC @ 10 V ±20V 1380 pF @ 25 V - 110W (Tc) -55°C ~ 175°C (TJ) Surface Mount
AUIRFR024NTRL

AUIRFR024NTRL

MOSFET N-CH 55V 17A TO252AA

Infineon Technologies
3,224 -

RFQ

AUIRFR024NTRL

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) HEXFET® Active N-Channel MOSFET (Metal Oxide) 55 V 17A (Tc) - 75mOhm @ 10A, 10V 4V @ 250µA 20 nC @ 10 V - 370 pF @ 25 V - 45W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRF6636TRPBF

IRF6636TRPBF

MOSFET N-CH 20V 18A DIRECTFET

Infineon Technologies
2,978 -

RFQ

IRF6636TRPBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) HEXFET® Active N-Channel MOSFET (Metal Oxide) 20 V 18A (Ta), 81A (Tc) 4.5V, 10V 4.5mOhm @ 18A, 10V 2.45V @ 250µA 27 nC @ 4.5 V ±20V 2420 pF @ 10 V - 2.2W (Ta), 42W (Tc) -40°C ~ 150°C (TJ) Surface Mount
AUIRFR9024NTRL

AUIRFR9024NTRL

MOSFET P-CH 55V 11A DPAK

Infineon Technologies
2,966 -

RFQ

AUIRFR9024NTRL

Ficha técnica

Tape & Reel (TR),Cut Tape (CT),Bulk HEXFET® Active P-Channel MOSFET (Metal Oxide) 55 V 11A (Tc) 10V 175mOhm @ 6.6A, 10V 4V @ 250µA 19 nC @ 10 V ±20V 350 pF @ 25 V - 38W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IPB144N12N3GATMA1

IPB144N12N3GATMA1

MOSFET N-CH 120V 56A D2PAK

Infineon Technologies
2,248 -

RFQ

IPB144N12N3GATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 120 V 56A (Ta) 10V 14.4mOhm @ 56A, 10V 4V @ 61µA 49 nC @ 10 V ±20V 3220 pF @ 60 V - 107W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRLB4132PBF

IRLB4132PBF

MOSFET N-CH 30V 78A TO220AB

Infineon Technologies
3,325 -

RFQ

IRLB4132PBF

Ficha técnica

Tube HEXFET® Active N-Channel MOSFET (Metal Oxide) 30 V 78A (Tc) 4.5V, 10V 3.5mOhm @ 40A, 10V 2.35V @ 100µA 54 nC @ 4.5 V ±20V 5110 pF @ 15 V - 140W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRF1010EZSTRLP

IRF1010EZSTRLP

MOSFET N-CH 60V 75A D2PAK

Infineon Technologies
2,474 -

RFQ

IRF1010EZSTRLP

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) HEXFET® Active N-Channel MOSFET (Metal Oxide) 60 V 75A (Tc) 10V 8.5mOhm @ 51A, 10V 4V @ 100µA 86 nC @ 10 V ±20V 2810 pF @ 25 V - 140W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPD60R210PFD7SAUMA1

IPD60R210PFD7SAUMA1

MOSFET N-CH 650V 16A TO252-3

Infineon Technologies
2,603 -

RFQ

Tape & Reel (TR),Cut Tape (CT) CoolMOS™PFD7 Active N-Channel MOSFET (Metal Oxide) 650 V 16A (Tc) 10V 210mOhm @ 4.9A, 10V 4.5V @ 240µA 23 nC @ 10 V ±20V 1015 pF @ 400 V - 64W (Tc) -40°C ~ 150°C (TJ) Surface Mount
IPB60R360P7ATMA1

IPB60R360P7ATMA1

MOSFET N-CH 600V 9A D2PAK

Infineon Technologies
2,802 -

RFQ

IPB60R360P7ATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) CoolMOS™ P7 Active N-Channel MOSFET (Metal Oxide) 600 V 9A (Tc) 10V 360mOhm @ 2.7A, 10V 4V @ 140µA 13 nC @ 10 V ±20V 555 pF @ 400 V - 41W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRF3205STRLPBF

IRF3205STRLPBF

MOSFET N-CH 55V 110A D2PAK

Infineon Technologies
3,781 -

RFQ

IRF3205STRLPBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) HEXFET® Active N-Channel MOSFET (Metal Oxide) 55 V 110A (Tc) 10V 8mOhm @ 62A, 10V 4V @ 250µA 146 nC @ 10 V ±20V 3247 pF @ 25 V - 200W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPD95R750P7ATMA1

IPD95R750P7ATMA1

MOSFET N-CH 950V 9A TO252-3

Infineon Technologies
3,849 -

RFQ

IPD95R750P7ATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) CoolMOS™ P7 Active N-Channel MOSFET (Metal Oxide) 950 V 9A (Tc) 10V 750mOhm @ 4.5A, 10V 3.5V @ 220µA 23 nC @ 10 V ±20V 712 pF @ 400 V - 73W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRLB8721PBF

IRLB8721PBF

MOSFET N-CH 30V 62A TO220AB

Infineon Technologies
2,570 -

RFQ

IRLB8721PBF

Ficha técnica

Bulk,Tube HEXFET® Active N-Channel MOSFET (Metal Oxide) 30 V 62A (Tc) 4.5V, 10V 8.7mOhm @ 31A, 10V 2.35V @ 25µA 13 nC @ 4.5 V ±20V 1077 pF @ 15 V - 65W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPD100N04S402ATMA1

IPD100N04S402ATMA1

MOSFET N-CH 40V 100A TO252-3

Infineon Technologies
3,595 -

RFQ

IPD100N04S402ATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT),Bulk OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 40 V 100A (Tc) 10V 2mOhm @ 100A, 10V 4V @ 95µA 118 nC @ 10 V ±20V 9430 pF @ 25 V - 150W (Tc) -55°C ~ 175°C (TJ) Surface Mount
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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