Transistores - FETs, MOSFETs - Único

Foto: Número da peça do fabricante Disponibilidade Preço Quantidade Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IRF6668TR1PBF

IRF6668TR1PBF

MOSFET N-CH 80V 55A DIRECTFET MZ

Infineon Technologies
2,164 -

RFQ

IRF6668TR1PBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 80 V 55A (Tc) 10V 15mOhm @ 12A, 10V 4.9V @ 100µA 31 nC @ 10 V ±20V 1320 pF @ 25 V - 2.8W (Ta), 89W (Tc) -40°C ~ 150°C (TJ) Surface Mount
IRF6678TR1PBF

IRF6678TR1PBF

MOSFET N-CH 30V 30A DIRECTFET

Infineon Technologies
2,003 -

RFQ

IRF6678TR1PBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 30A (Ta), 150A (Tc) 4.5V, 10V 2.2mOhm @ 30A, 10V 2.25V @ 250µA 65 nC @ 4.5 V ±20V 5640 pF @ 15 V - 2.8W (Ta), 89W (Tc) -40°C ~ 150°C (TJ) Surface Mount
IPD053N06NATMA1

IPD053N06NATMA1

MOSFET N-CH 60V 18A/45A TO252-3

Infineon Technologies
931 -

RFQ

IPD053N06NATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 60 V 18A (Ta), 45A (Tc) 6V, 10V 5.3mOhm @ 45A, 10V 2.8V @ 36µA 27 nC @ 10 V ±20V 2000 pF @ 30 V - 3W (Ta), 83W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRF6691TR1PBF

IRF6691TR1PBF

MOSFET N-CH 20V 32A DIRECTFET

Infineon Technologies
3,523 -

RFQ

IRF6691TR1PBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 20 V 32A (Ta), 180A (Tc) 4.5V, 10V 1.8mOhm @ 15A, 10V 2.5V @ 250µA 71 nC @ 4.5 V ±12V 6580 pF @ 10 V - 2.8W (Ta), 89W (Tc) -40°C ~ 150°C (TJ) Surface Mount
IRF6691TRPBF

IRF6691TRPBF

MOSFET N-CH 20V 32A DIRECTFET

Infineon Technologies
3,605 -

RFQ

IRF6691TRPBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 20 V 32A (Ta), 180A (Tc) 4.5V, 10V 1.8mOhm @ 15A, 10V 2.5V @ 250µA 71 nC @ 4.5 V ±12V 6580 pF @ 10 V - 2.8W (Ta), 89W (Tc) -40°C ~ 150°C (TJ) Surface Mount
IRF7473TRPBF

IRF7473TRPBF

MOSFET N-CH 100V 6.9A 8SO

Infineon Technologies
2,282 -

RFQ

IRF7473TRPBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) HEXFET® Active N-Channel MOSFET (Metal Oxide) 100 V 6.9A (Ta) 10V 26mOhm @ 4.1A, 10V 5.5V @ 250µA 61 nC @ 10 V ±20V 3180 pF @ 25 V - 2.5W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IRF7495TRPBF

IRF7495TRPBF

MOSFET N-CH 100V 7.3A 8SO

Infineon Technologies
3,671 -

RFQ

IRF7495TRPBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) HEXFET® Active N-Channel MOSFET (Metal Oxide) 100 V 7.3A (Ta) 10V 22mOhm @ 4.4A, 10V 4V @ 250µA 51 nC @ 10 V ±20V 1530 pF @ 25 V - 2.5W (Ta) -55°C ~ 150°C (TJ) Surface Mount
BSC046N02KSGAUMA1

BSC046N02KSGAUMA1

MOSFET N-CH 20V 19A/80A TDSON

Infineon Technologies
3,948 -

RFQ

BSC046N02KSGAUMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 20 V 19A (Ta), 80A (Tc) 2.5V, 4.5V 4.6mOhm @ 50A, 4.5V 1.2V @ 110µA 27.6 nC @ 4.5 V ±12V 4100 pF @ 10 V - 2.8W (Ta), 48W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRF9310TRPBF

IRF9310TRPBF

MOSFET P-CH 30V 20A 8SO

Infineon Technologies
3,001 -

RFQ

IRF9310TRPBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) HEXFET® Active P-Channel MOSFET (Metal Oxide) 30 V 20A (Tc) 4.5V, 10V 4.6mOhm @ 20A, 10V 2.4V @ 100µA 165 nC @ 10 V ±20V 5250 pF @ 15 V - 2.5W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IRF7493TRPBF

IRF7493TRPBF

MOSFET N-CH 80V 9.3A 8SO

Infineon Technologies
2,233 -

RFQ

IRF7493TRPBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) HEXFET® Active N-Channel MOSFET (Metal Oxide) 80 V 9.3A (Tc) 10V 15mOhm @ 5.6A, 10V 4V @ 250µA 53 nC @ 10 V ±20V 1510 pF @ 25 V - 2.5W (Tc) -55°C ~ 150°C (TJ) Surface Mount
BSZ146N10LS5ATMA1

BSZ146N10LS5ATMA1

MOSFET N-CH 100V 40A TSDSON

Infineon Technologies
4,820 -

RFQ

BSZ146N10LS5ATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ 5 Active N-Channel MOSFET (Metal Oxide) 100 V 40A (Tc) 4.5V, 10V 14.6mOhm @ 20A, 10V 2.3V @ 23µA 3.2 nC @ 4.5 V ±20V 1300 pF @ 50 V Standard 52W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRFH5110TRPBF

IRFH5110TRPBF

MOSFET N-CH 100V 11A/63A 8PQFN

Infineon Technologies
3,698 -

RFQ

IRFH5110TRPBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) HEXFET® Active N-Channel MOSFET (Metal Oxide) 100 V 11A (Ta), 63A (Tc) 10V 12.4mOhm @ 37A, 10V 4V @ 100µA 72 nC @ 10 V ±20V 3152 pF @ 25 V - 3.6W (Ta), 114W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IPD530N15N3GATMA1

IPD530N15N3GATMA1

MOSFET N-CH 150V 21A TO252-3

Infineon Technologies
3,643 -

RFQ

IPD530N15N3GATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 150 V 21A (Tc) 8V, 10V 53mOhm @ 18A, 10V 4V @ 35µA 12 nC @ 10 V ±20V 887 pF @ 75 V - 68W (Tc) -55°C ~ 175°C (TJ) Surface Mount
BSZ070N08LS5ATMA1

BSZ070N08LS5ATMA1

MOSFET N-CH 80V 40A TSDSON

Infineon Technologies
2,223 -

RFQ

BSZ070N08LS5ATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT),Bulk OptiMOS™ 5 Active N-Channel MOSFET (Metal Oxide) 80 V 40A (Tc) 4.5V, 10V 7mOhm @ 20A, 10V 2.3V @ 36µA 5 nC @ 4.5 V ±20V 2340 pF @ 40 V Standard 69W (Tc) -55°C ~ 150°C (TJ) Surface Mount
BSZ0501NSIATMA1

BSZ0501NSIATMA1

MOSFET N-CH 30V 25A/40A TSDSON

Infineon Technologies
3,946 -

RFQ

BSZ0501NSIATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 30 V 25A (Ta), 40A (Tc) 4.5V, 10V 2mOhm @ 20A, 10V 2V @ 250µA 33 nC @ 10 V ±20V 2000 pF @ 15 V - 2.1W (Ta), 50W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IPD60R360P7ATMA1

IPD60R360P7ATMA1

MOSFET N-CH 600V 9A TO252-3

Infineon Technologies
3,451 -

RFQ

IPD60R360P7ATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT),Bulk CoolMOS™ P7 Active N-Channel MOSFET (Metal Oxide) 600 V 9A (Tc) 10V 360mOhm @ 2.7A, 10V 4V @ 140µA 13 nC @ 10 V ±20V 555 pF @ 400 V - 41W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRLZ44NSTRLPBF

IRLZ44NSTRLPBF

MOSFET N-CH 55V 47A D2PAK

Infineon Technologies
1,590 -

RFQ

IRLZ44NSTRLPBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) HEXFET® Active N-Channel MOSFET (Metal Oxide) 55 V 47A (Tc) 4V, 10V 22mOhm @ 25A, 10V 2V @ 250µA 48 nC @ 5 V ±16V 1700 pF @ 25 V - 3.8W (Ta), 110W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFH5015TRPBF

IRFH5015TRPBF

MOSFET N-CH 150V 10A/56A 8PQFN

Infineon Technologies
3,649 -

RFQ

IRFH5015TRPBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) HEXFET® Active N-Channel MOSFET (Metal Oxide) 150 V 10A (Ta), 56A (Tc) 10V 31mOhm @ 34A, 10V 5V @ 150µA 50 nC @ 10 V ±20V 2300 pF @ 50 V - 3.6W (Ta), 156W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRFH8202TRPBF

IRFH8202TRPBF

MOSFET N-CH 25V 47A/100A 8PQFN

Infineon Technologies
2,429 -

RFQ

IRFH8202TRPBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) HEXFET®, StrongIRFET™ Active N-Channel MOSFET (Metal Oxide) 25 V 47A (Ta), 100A (Tc) 4.5V, 10V 1.05mOhm @ 50A, 10V 2.35V @ 150µA 110 nC @ 10 V ±20V 7174 pF @ 13 V - 3.6W (Ta), 160W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IPD80R1K0CEATMA1

IPD80R1K0CEATMA1

MOSFET N-CH 800V 5.7A TO252-3

Infineon Technologies
3,286 -

RFQ

IPD80R1K0CEATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) CoolMOS™ CE Active N-Channel MOSFET (Metal Oxide) 800 V 5.7A (Tc) 10V 950mOhm @ 3.6A, 10V 3.9V @ 250µA 31 nC @ 10 V ±20V 785 pF @ 100 V - 83W (Tc) -55°C ~ 150°C (TJ) Surface Mount
Total 8399 Record«Prev1... 102103104105106107108109...420Next»
1500+
1500+ Média diária de RFQ
20,000.000
20,000.000 Unidade padrão do produto
1800+
1800+ Fabricantes em todo o mundo
15,000+
15,000+ Armazém em estoque
Fudong Communication (Shenzhen) Grupo Co., Ltd.

Início

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Produto

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Telefone

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Usuário