Transistores - FETs, MOSFETs - Único

Foto: Número da peça do fabricante Disponibilidade Preço Quantidade Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IRLR6225TRPBF

IRLR6225TRPBF

MOSFET N-CH 20V 100A DPAK

Infineon Technologies
3,463 -

RFQ

IRLR6225TRPBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) HEXFET® Active N-Channel MOSFET (Metal Oxide) 20 V 100A (Tc) 2.5V, 4.5V 4mOhm @ 21A, 4.5V 1.1V @ 50µA 72 nC @ 4.5 V ±12V 3770 pF @ 10 V - 63W (Tc) -50°C ~ 150°C (TJ) Surface Mount
BSZ100N06LS3GATMA1

BSZ100N06LS3GATMA1

MOSFET N-CH 60V 11A/20A 8TSDSON

Infineon Technologies
3,410 -

RFQ

BSZ100N06LS3GATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 60 V 11A (Ta), 20A (Tc) 4.5V, 10V 10mOhm @ 20A, 10V 2.2V @ 23µA 45 nC @ 10 V ±20V 3500 pF @ 30 V - 2.1W (Ta), 50W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IPN60R360P7SATMA1

IPN60R360P7SATMA1

MOSFET N-CHANNEL 600V 9A SOT223

Infineon Technologies
3,187 -

RFQ

IPN60R360P7SATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) CoolMOS™ P7 Active N-Channel MOSFET (Metal Oxide) 600 V 9A (Tc) 10V 360mOhm @ 2.7A, 10V 4V @ 140µA 13 nC @ 10 V ±20V 555 pF @ 400 V - 7W (Tc) -40°C ~ 150°C (TJ) Surface Mount
BSC024NE2LSATMA1

BSC024NE2LSATMA1

MOSFET N-CH 25V 25A/110A TDSON

Infineon Technologies
3,590 -

RFQ

BSC024NE2LSATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 25 V 25A (Ta), 110A (Tc) 4.5V, 10V 2.4mOhm @ 30A, 10V 2V @ 250µA 23 nC @ 10 V ±20V 1700 pF @ 12 V - 2.5W (Ta), 48W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRFL4310PBF

IRFL4310PBF

MOSFET N-CH 100V SOT223

Infineon Technologies
3,129 -

RFQ

IRFL4310PBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT),Bulk - Obsolete N-Channel MOSFET (Metal Oxide) 100 V 2.2A (Ta) 10V - - - ±20V - - 1W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IRF7410TRPBF

IRF7410TRPBF

MOSFET P-CH 12V 16A 8SO

Infineon Technologies
2,224 -

RFQ

IRF7410TRPBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) HEXFET® Active P-Channel MOSFET (Metal Oxide) 12 V 16A (Ta) 1.8V, 4.5V 7mOhm @ 16A, 4.5V 900mV @ 250µA 91 nC @ 4.5 V ±8V 8676 pF @ 10 V - 2.5W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IRL100HS121

IRL100HS121

MOSFET N-CH 100V 11A 6PQFN

Infineon Technologies
3,840 -

RFQ

IRL100HS121

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 100 V 11A (Tc) 4.5V, 10V 42mOhm @ 6.7A, 10V 2.3V @ 10µA 5.6 nC @ 4.5 V ±20V 440 pF @ 50 V - 11.5W (Tc) -55°C ~ 175°C (TJ) Surface Mount
BSZ0703LSATMA1

BSZ0703LSATMA1

MOSFET N-CH 60V 40A TSDSON

Infineon Technologies
3,918 -

RFQ

BSZ0703LSATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 60 V 40A (Tc) 4.5V, 10V 6.5mOhm @ 20A, 10V 2.3V @ 20µA 13 nC @ 4.5 V ±20V 1800 pF @ 30 V Standard 46W (Tc) -55°C ~ 150°C (TJ) Surface Mount
BSC030N03LSGATMA1

BSC030N03LSGATMA1

MOSFET N-CH 30V 23A/100A TDSON

Infineon Technologies
3,431 -

RFQ

BSC030N03LSGATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 30 V 23A (Ta), 100A (Tc) 4.5V, 10V 3mOhm @ 30A, 10V 2.2V @ 250µA 55 nC @ 10 V ±20V 4300 pF @ 15 V - 2.5W (Ta), 69W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRFR540ZTRPBF

IRFR540ZTRPBF

MOSFET N-CH 100V 35A DPAK

Infineon Technologies
2,443 -

RFQ

IRFR540ZTRPBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) HEXFET® Active N-Channel MOSFET (Metal Oxide) 100 V 35A (Tc) 10V 28.5mOhm @ 21A, 10V 4V @ 50µA 59 nC @ 10 V ±20V 1690 pF @ 25 V - 91W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPD050N03LGATMA1

IPD050N03LGATMA1

MOSFET N-CH 30V 50A TO252-3

Infineon Technologies
2,359 -

RFQ

IPD050N03LGATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 30 V 50A (Tc) 4.5V, 10V 5mOhm @ 30A, 10V 2.2V @ 250µA 31 nC @ 10 V ±20V 3200 pF @ 15 V - 68W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRLR3105TRPBF

IRLR3105TRPBF

MOSFET N-CH 55V 25A DPAK

Infineon Technologies
3,694 -

RFQ

IRLR3105TRPBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) HEXFET® Active N-Channel MOSFET (Metal Oxide) 55 V 25A (Tc) 5V, 10V 37mOhm @ 15A, 10V 3V @ 250µA 20 nC @ 5 V ±16V 710 pF @ 25 V - 57W (Tc) -55°C ~ 175°C (TJ) Surface Mount
ISZ0803NLSATMA1

ISZ0803NLSATMA1

MOSFET N-CH 100V 7.7A/37A TSDSON

Infineon Technologies
2,858 -

RFQ

ISZ0803NLSATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ 5 Active N-Channel MOSFET (Metal Oxide) 100 V 7.7A (Ta), 37A (Tc) 4.5V, 10V 16.9mOhm @ 20A, 10V 2.3V @ 18µA 15 nC @ 10 V ±20V 1000 pF @ 50 V - 2.1W (Ta), 43W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IPN95R2K0P7ATMA1

IPN95R2K0P7ATMA1

MOSFET N-CH 950V 4A SOT223

Infineon Technologies
3,763 -

RFQ

IPN95R2K0P7ATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) CoolMOS™ P7 Active N-Channel MOSFET (Metal Oxide) 950 V 4A (Tc) 10V 2Ohm @ 1.7A, 10V 3.5V @ 80µA 10 nC @ 10 V ±20V 330 pF @ 400 V - 7W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRF7862TRPBF

IRF7862TRPBF

MOSFET N-CH 30V 21A 8SO

Infineon Technologies
3,826 -

RFQ

IRF7862TRPBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) HEXFET® Active N-Channel MOSFET (Metal Oxide) 30 V 21A (Ta) 4.5V, 10V 3.7mOhm @ 20A, 10V 2.35V @ 100µA 45 nC @ 4.5 V ±20V 4090 pF @ 15 V - 2.5W (Ta) -55°C ~ 150°C (TJ) Surface Mount
BSC060P03NS3EGATMA1

BSC060P03NS3EGATMA1

MOSFET P-CH 30V 17.7/100A 8TDSON

Infineon Technologies
3,312 -

RFQ

BSC060P03NS3EGATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT),Bulk OptiMOS™ Active P-Channel MOSFET (Metal Oxide) 30 V 17.7A (Ta), 100A (Tc) 6V, 10V 6mOhm @ 50A, 10V 3.1V @ 150µA 81 nC @ 10 V ±25V 6020 pF @ 15 V - 2.5W (Ta), 83W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRFR7446TRPBF

IRFR7446TRPBF

MOSFET N-CH 40V 56A DPAK

Infineon Technologies
3,061 -

RFQ

IRFR7446TRPBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) HEXFET®, StrongIRFET™ Active N-Channel MOSFET (Metal Oxide) 40 V 56A (Tc) 6V, 10V 3.9mOhm @ 56A, 10V 3.9V @ 100µA 130 nC @ 10 V ±20V 3150 pF @ 25 V - 98W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRF7831TRPBF

IRF7831TRPBF

MOSFET N-CH 30V 21A 8SO

Infineon Technologies
3,199 -

RFQ

IRF7831TRPBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) HEXFET® Active N-Channel MOSFET (Metal Oxide) 30 V 21A (Ta) 4.5V, 10V 3.6mOhm @ 20A, 10V 2.35V @ 250µA 60 nC @ 4.5 V ±12V 6240 pF @ 15 V - 2.5W (Ta) -55°C ~ 150°C (TJ) Surface Mount
ISC046N04NM5ATMA1

ISC046N04NM5ATMA1

40V 4.6M OPTIMOS MOSFET SUPERSO8

Infineon Technologies
3,942 -

RFQ

ISC046N04NM5ATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™-5 Active N-Channel MOSFET (Metal Oxide) 40 V 19A (Ta), 77A (Tc) 7V, 10V 4.6mOhm @ 35A, 10V 3.4V @ 17µA 21 nC @ 10 V ±20V 1400 pF @ 20 V - 3W (Ta), 50W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPD220N06L3GATMA1

IPD220N06L3GATMA1

MOSFET N-CH 60V 30A TO252-3

Infineon Technologies
2,720 -

RFQ

IPD220N06L3GATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 60 V 30A (Tc) 4.5V, 10V 22mOhm @ 30A, 10V 2.2V @ 11µA 10 nC @ 4.5 V ±20V 1600 pF @ 30 V - 36W (Tc) -55°C ~ 175°C (TJ) Surface Mount
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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