Transistores - FETs, MOSFETs - Único

Foto: Número da peça do fabricante Disponibilidade Preço Quantidade Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
BSP317PH6327XTSA1

BSP317PH6327XTSA1

MOSFET P-CH 250V 430MA SOT223-4

Infineon Technologies
2,187 -

RFQ

BSP317PH6327XTSA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101, SIPMOS® Active P-Channel MOSFET (Metal Oxide) 250 V 430mA (Ta) 4.5V, 10V 4Ohm @ 430mA, 10V 2V @ 370µA 15.1 nC @ 10 V ±20V 262 pF @ 25 V - 1.8W (Ta) -55°C ~ 150°C (TJ) Surface Mount
BSP315PH6327XTSA1

BSP315PH6327XTSA1

MOSFET P-CH 60V 1.17A SOT223-4

Infineon Technologies
3,072 -

RFQ

BSP315PH6327XTSA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT),Bulk SIPMOS® Active P-Channel MOSFET (Metal Oxide) 60 V 1.17A (Ta) 4.5V, 10V 800mOhm @ 1.17A, 10V 2V @ 160µA 7.8 nC @ 10 V ±20V 160 pF @ 25 V - 1.8W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IPD70R600P7SAUMA1

IPD70R600P7SAUMA1

MOSFET N-CH 700V 8.5A TO252-3

Infineon Technologies
2,797 -

RFQ

IPD70R600P7SAUMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) CoolMOS™ P7 Active N-Channel MOSFET (Metal Oxide) 700 V 8.5A (Tc) 10V 600mOhm @ 1.8A, 10V 3.5V @ 90µA 10.5 nC @ 10 V ±16V 364 pF @ 400 V - 43W (Tc) -40°C ~ 150°C (TJ) Surface Mount
BSP322PH6327XTSA1

BSP322PH6327XTSA1

MOSFET P-CH 100V 1A SOT223-4

Infineon Technologies
3,916 -

RFQ

BSP322PH6327XTSA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) SIPMOS® Active P-Channel MOSFET (Metal Oxide) 100 V 1A (Tc) 4.5V, 10V 800mOhm @ 1A, 10V 1V @ 380µA 16.5 nC @ 10 V ±20V 372 pF @ 25 V - 1.8W (Ta) -55°C ~ 150°C (TJ) Surface Mount
BSP170PH6327XTSA1

BSP170PH6327XTSA1

MOSFET P-CH 60V 1.9A SOT223-4

Infineon Technologies
3,846 -

RFQ

BSP170PH6327XTSA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) SIPMOS® Active P-Channel MOSFET (Metal Oxide) 60 V 1.9A (Ta) 10V 300mOhm @ 1.9A, 10V 4V @ 250µA 14 nC @ 10 V ±20V 410 pF @ 25 V - 1.8W (Ta) -55°C ~ 150°C (TJ) Surface Mount
BSZ097N04LSGATMA1

BSZ097N04LSGATMA1

MOSFET N-CH 40V 12A/40A 8TSDSON

Infineon Technologies
3,480 -

RFQ

BSZ097N04LSGATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 40 V 12A (Ta), 40A (Tc) 4.5V, 10V 9.7mOhm @ 20A, 10V 2V @ 14µA 24 nC @ 10 V ±20V 1900 pF @ 20 V - 2.1W (Ta), 35W (Tc) -55°C ~ 150°C (TJ) Surface Mount
BSP296NH6433XTMA1

BSP296NH6433XTMA1

MOSFET N-CH 100V 1.2A SOT223-4

Infineon Technologies
3,862 -

RFQ

BSP296NH6433XTMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT),Bulk OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 100 V 1.2A (Ta) 4.5V, 10V 600mOhm @ 1.2A, 10V 1.8V @ 100µA 6.7 nC @ 10 V ±20V 152.7 pF @ 25 V - 1.8W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IAUC28N08S5L230ATMA1

IAUC28N08S5L230ATMA1

MOSFET N-CH 80V 28A 8TDSON-33

Infineon Technologies
3,497 -

RFQ

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101, OptiMOS™-5 Active N-Channel MOSFET (Metal Oxide) 80 V 28A (Tc) 4.5V, 10V 23mOhm @ 14A, 10V 2V @ 11µA 15.1 nC @ 10 V ±20V 867 pF @ 40 V - 38W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPD30N03S4L14ATMA1

IPD30N03S4L14ATMA1

MOSFET N-CH 30V 30A TO252-3

Infineon Technologies
2,375 -

RFQ

IPD30N03S4L14ATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT),Bulk OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 30 V 30A (Tc) 4.5V, 10V 13.6mOhm @ 30A, 10V 2.2V @ 10µA 14 nC @ 10 V ±16V 980 pF @ 25 V - 31W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPN95R3K7P7ATMA1

IPN95R3K7P7ATMA1

MOSFET N-CH 950V 2A SOT223

Infineon Technologies
3,455 -

RFQ

IPN95R3K7P7ATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) CoolMOS™ P7 Active N-Channel MOSFET (Metal Oxide) 950 V 2A (Tc) 10V 3.7Ohm @ 800mA, 10V 3.5V @ 40µA 6 nC @ 10 V ±20V 196 pF @ 400 V - 6W (Tc) -55°C ~ 150°C (TJ) Surface Mount
BSC032NE2LSATMA1

BSC032NE2LSATMA1

MOSFET N-CH 25V 22A/84A TDSON

Infineon Technologies
2,146 -

RFQ

BSC032NE2LSATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 25 V 22A (Ta), 84A (Tc) 4.5V, 10V 3.2mOhm @ 30A, 10V 2V @ 250µA 16 nC @ 10 V ±20V 1200 pF @ 12 V - 2.8W (Ta), 78W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IPD060N03LGATMA1

IPD060N03LGATMA1

MOSFET N-CH 30V 50A TO252-3

Infineon Technologies
3,882 -

RFQ

IPD060N03LGATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT),Bulk OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 30 V 50A (Tc) 4.5V, 10V 6mOhm @ 30A, 10V 2.2V @ 250µA 23 nC @ 10 V ±20V 2400 pF @ 15 V - 56W (Tc) -55°C ~ 175°C (TJ) Surface Mount
SPD09P06PLGBTMA1

SPD09P06PLGBTMA1

MOSFET P-CH 60V 9.7A TO252-3

Infineon Technologies
3,425 -

RFQ

SPD09P06PLGBTMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) SIPMOS® Active P-Channel MOSFET (Metal Oxide) 60 V 9.7A (Tc) 4.5V, 10V 250mOhm @ 6.8A, 10V 2V @ 250µA 21 nC @ 10 V ±20V 450 pF @ 25 V - 42W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFR4105ZTRPBF

IRFR4105ZTRPBF

MOSFET N-CH 55V 30A DPAK

Infineon Technologies
2,267 -

RFQ

IRFR4105ZTRPBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) HEXFET® Active N-Channel MOSFET (Metal Oxide) 55 V 30A (Tc) 10V 24.5mOhm @ 18A, 10V 4V @ 250µA 27 nC @ 10 V ±20V 740 pF @ 25 V - 48W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRF9317TRPBF

IRF9317TRPBF

MOSFET P-CH 30V 16A 8SO

Infineon Technologies
3,689 -

RFQ

IRF9317TRPBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) HEXFET® Active P-Channel MOSFET (Metal Oxide) 30 V 16A (Ta) 4.5V, 10V 6.6mOhm @ 16A, 10V 2.4V @ 50µA 92 nC @ 10 V ±20V 2820 pF @ 15 V - 2.5W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IAUZ40N06S5N050ATMA1

IAUZ40N06S5N050ATMA1

MOSFET N-CH 60V 40A TSDSON-8-33

Infineon Technologies
3,574 -

RFQ

IAUZ40N06S5N050ATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™-5 Active N-Channel MOSFET (Metal Oxide) 60 V 40A (Tj) - 5mOhm @ 20A, 10V 3.4V @ 29µA 30.5 nC @ 10 V ±20V 2200 pF @ 30 V - 71W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRL60HS118

IRL60HS118

MOSFET N-CH 60V 18.5A 6PQFN

Infineon Technologies
3,892 -

RFQ

IRL60HS118

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 60 V 18.5A (Tc) 4.5V, 10V 17mOhm @ 11A, 10V 2.3V @ 10µA 8 nC @ 4.5 V ±20V 660 pF @ 25 V - 11.5W (Tc) -55°C ~ 175°C (TJ) Surface Mount
SPP42N03S2L13

SPP42N03S2L13

MOSFET N-CH 30V 42A TO220-3

Infineon Technologies
2,968 -

RFQ

SPP42N03S2L13

Ficha técnica

Tube OptiMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 30 V 42A (Tc) 4.5V, 10V 12.9mOhm @ 21A, 10V 2V @ 37µA 30.5 nC @ 10 V ±20V 1130 pF @ 25 V - 83W (Tc) -55°C ~ 175°C (TJ) Through Hole
BSL207SPL6327HTSA1

BSL207SPL6327HTSA1

MOSFET P-CH 20V 6A TSOP-6

Infineon Technologies
2,964 -

RFQ

BSL207SPL6327HTSA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT),Bulk OptiMOS™ Obsolete P-Channel MOSFET (Metal Oxide) 20 V 6A (Ta) 2.5V, 4.5V 41mOhm @ 6A, 4.5V 1.2V @ 40µA 20 nC @ 4.5 V ±12V 1007 pF @ 15 V - 2W (Ta) -55°C ~ 150°C (TJ) Surface Mount
BSL211SPT

BSL211SPT

MOSFET P-CH 20V 4.7A TSOP-6

Infineon Technologies
3,917 -

RFQ

BSL211SPT

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ Obsolete P-Channel MOSFET (Metal Oxide) 20 V 4.7A (Ta) 2.5V, 4.5V 67mOhm @ 4.7A, 4.5V 1.2V @ 25µA 12.4 nC @ 4.5 V ±12V 654 pF @ 15 V - 2W (Ta) -55°C ~ 150°C (TJ) Surface Mount
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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