Transistores - FETs, MOSFETs - Único

Foto: Número da peça do fabricante Disponibilidade Preço Quantidade Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
BSL307SPT

BSL307SPT

MOSFET P-CH 30V 5.5A TSOP-6

Infineon Technologies
2,584 -

RFQ

BSL307SPT

Ficha técnica

Tape & Reel (TR) OptiMOS™ Discontinued at Mosen P-Channel MOSFET (Metal Oxide) 30 V 5.5A (Ta) 4.5V, 10V 43mOhm @ 5.5A, 10V 2V @ 40µA 29 nC @ 10 V ±20V 805 pF @ 25 V - 2W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IPB09N03LAT

IPB09N03LAT

MOSFET N-CH 25V 50A TO263-3

Infineon Technologies
2,342 -

RFQ

IPB09N03LAT

Ficha técnica

Tape & Reel (TR) OptiMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 25 V 50A (Tc) 4.5V, 10V 8.9mOhm @ 30A, 10V 2V @ 20µA 13 nC @ 5 V ±20V 1642 pF @ 15 V - 63W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPB14N03LAT

IPB14N03LAT

MOSFET N-CH 25V 30A TO263-3

Infineon Technologies
3,959 -

RFQ

IPB14N03LAT

Ficha técnica

Tape & Reel (TR) OptiMOS™ Discontinued at Mosen N-Channel MOSFET (Metal Oxide) 25 V 30A (Tc) 4.5V, 10V 13.6mOhm @ 30A, 10V 2V @ 20µA 8.3 nC @ 5 V ±20V 1043 pF @ 15 V - 46W (Tc) -55°C ~ 175°C (TJ) Surface Mount
SPB100N03S2L03T

SPB100N03S2L03T

MOSFET N-CH 30V 100A TO263-3

Infineon Technologies
2,769 -

RFQ

SPB100N03S2L03T

Ficha técnica

Tape & Reel (TR) OptiMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 30 V 100A (Tc) 10V 2.7mOhm @ 80A, 10V 2V @ 250µA 220 nC @ 10 V ±20V 8180 pF @ 25 V - 300W (Tc) -55°C ~ 175°C (TJ) Surface Mount
SPB21N10T

SPB21N10T

MOSFET N-CH 100V 21A TO263-3

Infineon Technologies
3,967 -

RFQ

SPB21N10T

Ficha técnica

Tape & Reel (TR) SIPMOS® Obsolete N-Channel MOSFET (Metal Oxide) 100 V 21A (Tc) 10V 80mOhm @ 15A, 10V 4V @ 44µA 38.4 nC @ 10 V ±20V 865 pF @ 25 V - 90W (Tc) -55°C ~ 175°C (TJ) Surface Mount
SPB35N10T

SPB35N10T

MOSFET N-CH 100V 35A TO263-3

Infineon Technologies
3,527 -

RFQ

SPB35N10T

Ficha técnica

Tape & Reel (TR) SIPMOS® Obsolete N-Channel MOSFET (Metal Oxide) 100 V 35A (Tc) 10V 44mOhm @ 26.4A, 10V 4V @ 83µA 65 nC @ 10 V ±20V 1570 pF @ 25 V - 150W (Tc) -55°C ~ 175°C (TJ) Surface Mount
SPB42N03S2L13T

SPB42N03S2L13T

MOSFET N-CH 30V 42A TO263-3

Infineon Technologies
3,733 -

RFQ

SPB42N03S2L13T

Ficha técnica

Tape & Reel (TR) OptiMOS™ Discontinued at Mosen N-Channel MOSFET (Metal Oxide) 30 V 42A (Tc) 4.5V, 10V 12.6mOhm @ 21A, 10V 2V @ 37µA 30.5 nC @ 10 V ±20V 1130 pF @ 25 V - 83W (Tc) -55°C ~ 175°C (TJ) Surface Mount
SPB73N03S2L08T

SPB73N03S2L08T

MOSFET N-CH 30V 73A TO263-3

Infineon Technologies
2,086 -

RFQ

SPB73N03S2L08T

Ficha técnica

Tape & Reel (TR) OptiMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 30 V 73A (Tc) 4.5V, 10V 8.1mOhm @ 36A, 10V 2V @ 55µA 46.2 nC @ 10 V ±20V 1710 pF @ 25 V - 107W (Tc) -55°C ~ 175°C (TJ) Surface Mount
SPB80N03S2L05T

SPB80N03S2L05T

MOSFET N-CH 30V 80A TO263-3

Infineon Technologies
3,231 -

RFQ

SPB80N03S2L05T

Ficha técnica

Tape & Reel (TR) OptiMOS™ Discontinued at Mosen N-Channel MOSFET (Metal Oxide) 30 V 80A (Tc) 4.5V, 10V 4.9mOhm @ 55A, 10V 2V @ 110µA 89.7 nC @ 10 V ±20V 3320 pF @ 25 V - 167W (Tc) -55°C ~ 175°C (TJ) Surface Mount
SPB80N03S2L06T

SPB80N03S2L06T

MOSFET N-CH 30V 80A TO263-3

Infineon Technologies
3,899 -

RFQ

SPB80N03S2L06T

Ficha técnica

Tape & Reel (TR) OptiMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 30 V 80A (Tc) 4.5V, 10V 5.9mOhm @ 80A, 10V 2V @ 80µA 68 nC @ 10 V ±20V 2530 pF @ 25 V - 150W (Tc) -55°C ~ 175°C (TJ) Surface Mount
SPD100N03S2L04T

SPD100N03S2L04T

MOSFET N-CH 30V 100A TO252-5

Infineon Technologies
3,799 -

RFQ

SPD100N03S2L04T

Ficha técnica

Tape & Reel (TR) OptiMOS™ Discontinued at Mosen N-Channel MOSFET (Metal Oxide) 30 V 100A (Tc) 4.5V, 10V 4.2mOhm @ 50A, 10V 2V @ 100µA 89.7 nC @ 10 V ±20V 3320 pF @ 25 V - 150W (Tc) -55°C ~ 175°C (TJ) Surface Mount
SPD30N03S2L07T

SPD30N03S2L07T

MOSFET N-CH 30V 30A TO252-3

Infineon Technologies
3,299 -

RFQ

SPD30N03S2L07T

Ficha técnica

Tape & Reel (TR) OptiMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 30 V 30A (Tc) 4.5V, 10V 6.7mOhm @ 30A, 10V 2V @ 85µA 68 nC @ 10 V ±20V 2530 pF @ 25 V - 136W (Tc) -55°C ~ 175°C (TJ) Surface Mount
SPD30N03S2L10T

SPD30N03S2L10T

MOSFET N-CH 30V 30A TO252-3

Infineon Technologies
3,099 -

RFQ

SPD30N03S2L10T

Ficha técnica

Tape & Reel (TR) OptiMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 30 V 30A (Tc) 4.5V, 10V 10mOhm @ 30A, 10V 2V @ 50µA 41.8 nC @ 10 V ±20V 1550 pF @ 25 V - 100W (Tc) -55°C ~ 175°C (TJ) Surface Mount
SPI100N03S2L03

SPI100N03S2L03

MOSFET N-CH 30V 100A TO262-3

Infineon Technologies
3,597 -

RFQ

SPI100N03S2L03

Ficha técnica

Bulk OptiMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 30 V 100A (Tc) 10V 3mOhm @ 80A, 10V 2V @ 250µA 220 nC @ 10 V ±20V 8180 pF @ 25 V - 300W (Tc) -55°C ~ 175°C (TJ) Through Hole
SPP100N03S203

SPP100N03S203

MOSFET N-CH 30V 100A TO220-3

Infineon Technologies
2,688 -

RFQ

SPP100N03S203

Ficha técnica

Bulk OptiMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 30 V 100A (Tc) 10V 3.3mOhm @ 80A, 10V 4V @ 250µA 150 nC @ 10 V ±20V 7020 pF @ 25 V - 300W (Tc) -55°C ~ 175°C (TJ) Through Hole
AIMW120R045M1XKSA1

AIMW120R045M1XKSA1

SICFET N-CH 1200V 52A TO247-3

Infineon Technologies
3,182 -

RFQ

Bulk,Tube Automotive, AEC-Q101, CoolSiC™ Active N-Channel SiCFET (Silicon Carbide) 1200 V 52A (Tc) - 59mOhm @ 20A, 15V 5.7V @ 10mA 57 nC @ 15 V +20V, -7V 2130 pF @ 800 V - 228W (Tc) -40°C ~ 175°C (TJ) Through Hole
IPB60R055CFD7ATMA1

IPB60R055CFD7ATMA1

MOSFET N-CH 650V 38A TO263-3-2

Infineon Technologies
3,743 -

RFQ

IPB60R055CFD7ATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) CoolMOS™ CFD7 Active N-Channel MOSFET (Metal Oxide) 650 V 38A (Tc) 10V 55mOhm @ 18A, 10V 4.5V @ 900µA 79 nC @ 10 V ±20V 3194 pF @ 400 V - 178W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IMW120R030M1HXKSA1

IMW120R030M1HXKSA1

SICFET N-CH 1.2KV 56A TO247-3

Infineon Technologies
2,258 -

RFQ

IMW120R030M1HXKSA1

Ficha técnica

Tube CoolSiC™ Active N-Channel SiCFET (Silicon Carbide) 1200 V 56A (Tc) 15V, 18V 40mOhm @ 25A, 18V 5.7V @ 10mA 63 nC @ 18 V +23V, -7V 2120 pF @ 800 V - 227W (Tc) -55°C ~ 175°C (TJ) Through Hole
IMZ120R030M1HXKSA1

IMZ120R030M1HXKSA1

SICFET N-CH 1.2KV 56A TO247-4

Infineon Technologies
3,430 -

RFQ

IMZ120R030M1HXKSA1

Ficha técnica

Tube CoolSiC™ Active N-Channel SiCFET (Silicon Carbide) 1200 V 56A (Tc) 15V, 18V 40mOhm @ 25A, 18V 5.7V @ 10mA 63 nC @ 18 V +23V, -7V 2120 pF @ 800 V - 227W (Tc) -55°C ~ 175°C (TJ) Through Hole
SPP100N03S2L03

SPP100N03S2L03

MOSFET N-CH 30V 100A TO220-3

Infineon Technologies
2,651 -

RFQ

SPP100N03S2L03

Ficha técnica

Bulk OptiMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 30 V 100A (Tc) 10V 3mOhm @ 80A, 10V 2V @ 250µA 220 nC @ 10 V ±20V 8180 pF @ 25 V - 300W (Tc) -55°C ~ 175°C (TJ) Through Hole
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1800+ Fabricantes em todo o mundo
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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