Transistores - FETs, MOSFETs - Único

Foto: Número da peça do fabricante Disponibilidade Preço Quantidade Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
AUIRFS3107TRL

AUIRFS3107TRL

MOSFET N-CH 75V 195A D2PAK

Infineon Technologies
2,388 -

RFQ

AUIRFS3107TRL

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101, HEXFET® Not For New Designs N-Channel MOSFET (Metal Oxide) 75 V 195A (Tc) 10V 3mOhm @ 140A, 10V 4V @ 250µA 240 nC @ 10 V ±20V 9370 pF @ 50 V - 370W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFB4110PBF

IRFB4110PBF

MOSFET N-CH 100V 120A TO220AB

Infineon Technologies
4,880 -

RFQ

IRFB4110PBF

Ficha técnica

Tube HEXFET® Active N-Channel MOSFET (Metal Oxide) 100 V 120A (Tc) 10V 4.5mOhm @ 75A, 10V 4V @ 250µA 210 nC @ 10 V ±20V 9620 pF @ 50 V - 370W (Tc) -55°C ~ 175°C (TJ) Through Hole
ISC011N06LM5ATMA1

ISC011N06LM5ATMA1

TRENCH 40<-<100V PG-TDSON-8

Infineon Technologies
3,359 -

RFQ

ISC011N06LM5ATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 60 V 37A (Ta), 288A (Tc) 4.5V, 10V 1.15mOhm @ 50A, 10V 2.3V @ 116µA 170 nC @ 10 V ±20V 11000 pF @ 30 V - 3W (Ta), 188W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPT007N06NATMA1

IPT007N06NATMA1

MOSFET N-CH 60V 300A 8HSOF

Infineon Technologies
3,631 -

RFQ

IPT007N06NATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 60 V 300A (Tc) 6V, 10V 0.75mOhm @ 150A, 10V 3.3V @ 280µA 287 nC @ 10 V ±20V 16000 pF @ 30 V - 375W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPT010N08NM5ATMA1

IPT010N08NM5ATMA1

TRENCH 40<-<100V PG-HSOF-8

Infineon Technologies
2,079 -

RFQ

IPT010N08NM5ATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 80 V 43A (Ta), 425A (Tc) 6V, 10V 1.05mOhm @ 150A, 10V 3.8V @ 280µA 223 nC @ 10 V ±20V 16000 pF @ 40 V - 3.8W (Ta), 375W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPB010N06NATMA1

IPB010N06NATMA1

MOSFET N-CH 60V 45A/180A TO263-7

Infineon Technologies
3,267 -

RFQ

IPB010N06NATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 60 V 45A (Ta), 180A (Tc) 6V, 10V 1mOhm @ 100A, 10V 4V @ 280µA 208 nC @ 10 V ±20V 15000 pF @ 30 V - 300W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPB065N15N3GATMA1

IPB065N15N3GATMA1

MOSFET N-CH 150V 130A TO263-7

Infineon Technologies
3,833 -

RFQ

IPB065N15N3GATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 150 V 130A (Tc) 8V, 10V 6.5mOhm @ 100A, 10V 4V @ 270µA 93 nC @ 10 V ±20V 7300 pF @ 75 V - 300W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFP3703PBF

IRFP3703PBF

MOSFET N-CH 30V 210A TO247AC

Infineon Technologies
1,109 -

RFQ

IRFP3703PBF

Ficha técnica

Bulk,Tube HEXFET® Active N-Channel MOSFET (Metal Oxide) 30 V 210A (Tc) 7V, 10V 2.8mOhm @ 76A, 10V 4V @ 250µA 209 nC @ 10 V ±20V 8250 pF @ 25 V - 3.8W (Ta), 230W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRFP4310ZPBF

IRFP4310ZPBF

MOSFET N-CH 100V 120A TO247AC

Infineon Technologies
2,493 -

RFQ

IRFP4310ZPBF

Ficha técnica

Tube HEXFET® Active N-Channel MOSFET (Metal Oxide) 100 V 120A (Tc) 10V 6mOhm @ 75A, 10V 4V @ 150µA 170 nC @ 10 V ±20V 6860 pF @ 50 V - 280W (Tc) -55°C ~ 175°C (TJ) Through Hole
BTS247Z E3062A

BTS247Z E3062A

MOSFET N-CH 55V 33A TO263-5

Infineon Technologies
3,458 -

RFQ

BTS247Z E3062A

Ficha técnica

Tape & Reel (TR) TEMPFET® Obsolete N-Channel MOSFET (Metal Oxide) 55 V 33A (Tc) 4.5V, 10V 18mOhm @ 12A, 10V 2V @ 90µA 90 nC @ 10 V ±20V 1730 pF @ 25 V Temperature Sensing Diode 120W (Tc) -40°C ~ 175°C (TJ) Surface Mount
IPTC012N08NM5ATMA1

IPTC012N08NM5ATMA1

MOSFET N-CH 80V 40A/396A HDSOP

Infineon Technologies
3,932 -

RFQ

IPTC012N08NM5ATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ 5 Active N-Channel MOSFET (Metal Oxide) 80 V 40A (Ta), 396A (Tc) 6V, 10V 1.2mOhm @ 100A, 10V 3.8V @ 275µA 219 nC @ 10 V ±20V 16000 pF @ 40 V - 3.8W (Ta), 375W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPB107N20N3GATMA1

IPB107N20N3GATMA1

MOSFET N-CH 200V 88A D2PAK

Infineon Technologies
2,079 -

RFQ

IPB107N20N3GATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 200 V 88A (Tc) 10V 10.7mOhm @ 88A, 10V 4V @ 270µA 87 nC @ 10 V ±20V 7100 pF @ 100 V - 300W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFP4321PBF

IRFP4321PBF

MOSFET N-CH 150V 78A TO247AC

Infineon Technologies
3,271 -

RFQ

IRFP4321PBF

Ficha técnica

Tube HEXFET® Active N-Channel MOSFET (Metal Oxide) 150 V 78A (Tc) 10V 15.5mOhm @ 33A, 10V 5V @ 250µA 110 nC @ 10 V ±30V 4460 pF @ 25 V - 310W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPL60R065P7AUMA1

IPL60R065P7AUMA1

MOSFET N-CH 650V 41A 4VSON

Infineon Technologies
2,116 -

RFQ

IPL60R065P7AUMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) CoolMOS™ P7 Active N-Channel MOSFET (Metal Oxide) 650 V 41A (Tc) 10V 65mOhm @ 15.9A, 10V 4V @ 800µA 67 nC @ 10 V ±20V 2895 pF @ 400 V - 201W (Tc) -40°C ~ 150°C (TJ) Surface Mount
AUIRFS8407-7P

AUIRFS8407-7P

MOSFET N-CH 40V 240A D2PAK-7

Infineon Technologies
2,766 -

RFQ

AUIRFS8407-7P

Ficha técnica

Tube HEXFET® Not For New Designs N-Channel MOSFET (Metal Oxide) 40 V 240A (Tc) 10V 1.3mOhm @ 100A, 10V 3.9V @ 150µA 225 nC @ 10 V ±20V 7437 pF @ 25 V - 231W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPB020N10N5LFATMA1

IPB020N10N5LFATMA1

MOSFET N-CH 100V 120A TO263-3

Infineon Technologies
3,122 -

RFQ

IPB020N10N5LFATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™-5 Active N-Channel MOSFET (Metal Oxide) 100 V 120A (Tc) 10V 2mOhm @ 100A, 10V 4.1V @ 270µA 195 nC @ 10 V ±20V 840 pF @ 50 V - 313W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IPL60R060CFD7AUMA1

IPL60R060CFD7AUMA1

MOSFET N CH

Infineon Technologies
3,158 -

RFQ

IPL60R060CFD7AUMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) CoolMOS™ CFD7 Active N-Channel MOSFET (Metal Oxide) 600 V 40A (Tc) 10V 60mOhm @ 18A, 10V 4.5V @ 900µA 79 nC @ 10 V ±20V 3193 pF @ 400 V - 219W (Tc) -40°C ~ 150°C (TJ) Surface Mount
IPB044N15N5ATMA1

IPB044N15N5ATMA1

MOSFET N-CH 150V 174A TO263-7

Infineon Technologies
3,828 -

RFQ

IPB044N15N5ATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 150 V 174A (Tc) 8V, 10V 4.4mOhm @ 87A, 10V 4.6V @ 264µA 100 nC @ 10 V ±20V 8000 pF @ 75 V - 300W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPT020N10N3ATMA1

IPT020N10N3ATMA1

MOSFET N-CH 100V 300A 8HSOF

Infineon Technologies
3,283 -

RFQ

IPT020N10N3ATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 100 V 300A (Tc) 6V, 10V 2mOhm @ 150A, 10V 3.5V @ 272µA 156 nC @ 10 V ±20V 11200 pF @ 50 V - 375W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPT059N15N3ATMA1

IPT059N15N3ATMA1

MOSFET N-CH 150V 155A 8HSOF

Infineon Technologies
2,930 -

RFQ

IPT059N15N3ATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT),Bulk OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 150 V 155A (Tc) 8V, 10V 5.9mOhm @ 150A, 10V 4V @ 270µA 92 nC @ 10 V ±20V 7200 pF @ 75 V - 375W (Tc) -55°C ~ 175°C (TJ) Surface Mount
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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