Transistores - FETs, MOSFETs - Único

Foto: Número da peça do fabricante Disponibilidade Preço Quantidade Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IPA60R180P7SXKSA1

IPA60R180P7SXKSA1

MOSFET N-CHANNEL 600V 18A TO220

Infineon Technologies
2,207 -

RFQ

IPA60R180P7SXKSA1

Ficha técnica

Tube CoolMOS™ P7 Active N-Channel MOSFET (Metal Oxide) 600 V 18A (Tc) 10V 180mOhm @ 5.6A, 10V 4V @ 280µA 25 nC @ 10 V ±20V 1081 pF @ 400 V - 26W (Tc) -40°C ~ 150°C (TJ) Through Hole
BSC093N15NS5ATMA1

BSC093N15NS5ATMA1

MOSFET N-CH 150V 87A TDSON

Infineon Technologies
2,380 -

RFQ

BSC093N15NS5ATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 150 V 87A (Tc) 8V, 10V 9.3mOhm @ 44A, 10V 4.6V @ 107µA 40.7 nC @ 10 V ±20V 3230 pF @ 75 V - 139W (Tc) -55°C ~ 150°C (TJ) Surface Mount
ISC027N10NM6ATMA1

ISC027N10NM6ATMA1

TRENCH >=100V PG-TDSON-8

Infineon Technologies
2,885 -

RFQ

ISC027N10NM6ATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 100 V 23A (Ta), 192A (Tc) 8V, 10V 2.7mOhm @ 50A, 10V 3.3V @ 116µA 72.5 nC @ 10 V ±20V 5500 pF @ 50 V - 3W (Ta), 217W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFS4115TRLPBF

IRFS4115TRLPBF

MOSFET N-CH 150V 195A D2PAK

Infineon Technologies
3,919 -

RFQ

IRFS4115TRLPBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) HEXFET® Active N-Channel MOSFET (Metal Oxide) 150 V 195A (Tc) 10V 12.1mOhm @ 62A, 10V 5V @ 250µA 120 nC @ 10 V ±20V 5270 pF @ 50 V - 375W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPB100N06S2L05ATMA2

IPB100N06S2L05ATMA2

MOSFET N-CH 55V 100A TO263-3

Infineon Technologies
194 -

RFQ

IPB100N06S2L05ATMA2

Ficha técnica

Tape & Reel (TR),Cut Tape (CT),Bulk OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 55 V 100A (Tc) 4.5V, 10V 4.4mOhm @ 80A, 10V 2V @ 250µA 230 nC @ 10 V ±20V 5660 pF @ 25 V - 300W (Tc) -55°C ~ 175°C (TJ) Surface Mount
BSC015NE2LS5IATMA1

BSC015NE2LS5IATMA1

MOSFET N-CH 25V 33A/100A TDSON

Infineon Technologies
10,000 -

RFQ

BSC015NE2LS5IATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 25 V 33A (Ta), 100A (Tc) 4.5V, 10V 1.5mOhm @ 30A, 10V 2V @ 250µA 30 nC @ 10 V ±16V 2000 pF @ 12 V - 2.5W (Ta), 50W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRF3805STRL-7PP

IRF3805STRL-7PP

MOSFET N-CH 55V 160A D2PAK

Infineon Technologies
2,485 -

RFQ

IRF3805STRL-7PP

Ficha técnica

Tape & Reel (TR),Cut Tape (CT),Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 55 V 160A (Tc) 10V 2.6mOhm @ 140A, 10V 4V @ 250µA 200 nC @ 10 V ±20V 7820 pF @ 25 V - 300W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRL2910PBF

IRL2910PBF

MOSFET N-CH 100V 55A TO220AB

Infineon Technologies
3,755 -

RFQ

IRL2910PBF

Ficha técnica

Tube HEXFET® Active N-Channel MOSFET (Metal Oxide) 100 V 55A (Tc) 4V, 10V 26mOhm @ 29A, 10V 2V @ 250µA 140 nC @ 5 V ±16V 3700 pF @ 25 V - 200W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRFS4010TRLPBF

IRFS4010TRLPBF

MOSFET N-CH 100V 180A D2PAK

Infineon Technologies
3,319 -

RFQ

IRFS4010TRLPBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) HEXFET® Active N-Channel MOSFET (Metal Oxide) 100 V 180A (Tc) 10V 4.7mOhm @ 106A, 10V 4V @ 250µA 215 nC @ 10 V ±20V 9575 pF @ 50 V - 375W (Tc) -55°C ~ 175°C (TJ) Surface Mount
SPP06N80C3XKSA1

SPP06N80C3XKSA1

MOSFET N-CH 800V 6A TO220-3

Infineon Technologies
2,702 -

RFQ

SPP06N80C3XKSA1

Ficha técnica

Tube CoolMOS™ Active N-Channel MOSFET (Metal Oxide) 800 V 6A (Tc) 10V 900mOhm @ 3.8A, 10V 3.9V @ 250µA 41 nC @ 10 V ±20V 785 pF @ 100 V - 83W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPD80P03P4L07ATMA2

IPD80P03P4L07ATMA2

MOSFET P-CH 30V 80A TO252-31

Infineon Technologies
3,459 -

RFQ

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101, OptiMOS®-P2 Active P-Channel MOSFET (Metal Oxide) 30 V 80A (Tc) - 6.8mOhm @ 80A, 10V 2V @ 130µA 80 nC @ 10 V +5V, -16V 5700 pF @ 25 V - 88W (Tc) -55°C ~ 175°C (TJ) Surface Mount
SPA06N80C3XKSA1

SPA06N80C3XKSA1

MOSFET N-CH 800V 6A TO220-FP

Infineon Technologies
2,715 -

RFQ

SPA06N80C3XKSA1

Ficha técnica

Bulk,Tube CoolMOS™ Active N-Channel MOSFET (Metal Oxide) 800 V 6A (Tc) 10V 900mOhm @ 3.8A, 10V 3.9V @ 250µA 41 nC @ 10 V ±20V 785 pF @ 100 V - 39W (Tc) -55°C ~ 150°C (TJ) Through Hole
SPB80P06PGATMA1

SPB80P06PGATMA1

MOSFET P-CH 60V 80A TO263-3

Infineon Technologies
3,388 -

RFQ

SPB80P06PGATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) SIPMOS® Active P-Channel MOSFET (Metal Oxide) 60 V 80A (Tc) 10V 23mOhm @ 64A, 10V 4V @ 5.5mA 173 nC @ 10 V ±20V 5033 pF @ 25 V - 340W (Tc) -55°C ~ 175°C (TJ) Surface Mount
BSC034N06NSATMA1

BSC034N06NSATMA1

MOSFET N-CH 60V 100A TDSON

Infineon Technologies
20,608 -

RFQ

BSC034N06NSATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 60 V 100A (Tc) 6V, 10V 3.4mOhm @ 50A, 10V 3.3V @ 41µA 41 nC @ 10 V ±20V 3000 pF @ 30 V - 2.5W (Ta), 74W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRF1407PBF

IRF1407PBF

MOSFET N-CH 75V 130A TO220AB

Infineon Technologies
2,671 -

RFQ

IRF1407PBF

Ficha técnica

Tube HEXFET® Not For New Designs N-Channel MOSFET (Metal Oxide) 75 V 130A (Tc) 10V 7.8mOhm @ 78A, 10V 4V @ 250µA 250 nC @ 10 V ±20V 5600 pF @ 25 V - 330W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPD85P04P407ATMA2

IPD85P04P407ATMA2

MOSFET P-CH 40V 85A TO252-3

Infineon Technologies
3,805 -

RFQ

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101, OptiMOS®-P2 Active P-Channel MOSFET (Metal Oxide) 40 V 85A (Tc) - 7.3mOhm @ 85A, 10V 4V @ 150µA 89 nC @ 10 V ±20V 6085 pF @ 25 V - 88W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IAUT200N08S5N023ATMA1

IAUT200N08S5N023ATMA1

MOSFET N-CH 80V 200A 8HSOF

Infineon Technologies
3,060 -

RFQ

IAUT200N08S5N023ATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT),Bulk OptiMOS™-5 Active N-Channel MOSFET (Metal Oxide) 80 V 200A (Tc) 6V, 10V 2.3mOhm @ 100A, 10V 3.8V @ 130µA 110 nC @ 10 V ±20V 7670 pF @ 40 V - 200W (Tc) -55°C ~ 175°C (TJ) Surface Mount
BSC027N10NS5ATMA1

BSC027N10NS5ATMA1

MOSFET N-CH 100V 23A/100A TSON

Infineon Technologies
3,212 -

RFQ

BSC027N10NS5ATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 100 V 23A (Ta), 100A (Tc) 6V, 10V 2.7mOhm @ 50A, 10V 3.8V @ 146µA 111 nC @ 10 V ±20V 8200 pF @ 50 V - 3W (Ta), 214W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRF7769L1TRPBF

IRF7769L1TRPBF

MOSFET N-CH 100V 20A DIRECTFET

Infineon Technologies
3,187 -

RFQ

IRF7769L1TRPBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT),Bulk - Active N-Channel MOSFET (Metal Oxide) 100 V 20A (Ta), 124A (Tc) 10V 3.5mOhm @ 74A, 10V 4V @ 250µA 300 nC @ 10 V ±20V 11560 pF @ 25 V - 3.3W (Ta), 125W (Tc) -55°C ~ 175°C (TJ) Surface Mount
BSC220N20NSFDATMA1

BSC220N20NSFDATMA1

MOSFET N-CH 200V 52A TSON-8

Infineon Technologies
2,637 -

RFQ

BSC220N20NSFDATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 200 V 52A (Tc) 10V 22mOhm @ 52A, 10V 4V @ 137µA 43 nC @ 10 V ±20V 3680 pF @ 100 V - 214W (Tc) -55°C ~ 175°C (TJ) Surface Mount
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1500+ Média diária de RFQ
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1800+ Fabricantes em todo o mundo
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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